KR102160840B1 - 임베디드 sem 구조물 오버레이 타겟을 갖는 ovl을 위한 디바이스 상관 계측(dcm) - Google Patents
임베디드 sem 구조물 오버레이 타겟을 갖는 ovl을 위한 디바이스 상관 계측(dcm) Download PDFInfo
- Publication number
- KR102160840B1 KR102160840B1 KR1020157008261A KR20157008261A KR102160840B1 KR 102160840 B1 KR102160840 B1 KR 102160840B1 KR 1020157008261 A KR1020157008261 A KR 1020157008261A KR 20157008261 A KR20157008261 A KR 20157008261A KR 102160840 B1 KR102160840 B1 KR 102160840B1
- Authority
- KR
- South Korea
- Prior art keywords
- periodic structure
- target
- overlay
- layer
- periodic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H01L22/12—
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W46/00—Marks applied to devices, e.g. for alignment or identification
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
-
- H01L23/544—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261697503P | 2012-09-06 | 2012-09-06 | |
| US61/697,503 | 2012-09-06 | ||
| US13/776,550 US9093458B2 (en) | 2012-09-06 | 2013-02-25 | Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets |
| US13/776,550 | 2013-02-25 | ||
| PCT/US2013/058278 WO2014039689A1 (en) | 2012-09-06 | 2013-09-05 | Device correlated metrology (dcm) for ovl with embedded sem structure overlay targets |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20150053770A KR20150053770A (ko) | 2015-05-18 |
| KR102160840B1 true KR102160840B1 (ko) | 2020-09-29 |
Family
ID=50188111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020157008261A Active KR102160840B1 (ko) | 2012-09-06 | 2013-09-05 | 임베디드 sem 구조물 오버레이 타겟을 갖는 ovl을 위한 디바이스 상관 계측(dcm) |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9093458B2 (https=) |
| JP (1) | JP6320387B2 (https=) |
| KR (1) | KR102160840B1 (https=) |
| TW (1) | TWI594294B (https=) |
| WO (1) | WO2014039689A1 (https=) |
Families Citing this family (67)
| Publication number | Priority date | Publication date | Assignee | Title |
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| EP2865003A1 (en) * | 2012-06-26 | 2015-04-29 | Kla-Tencor Corporation | Scanning in angle-resolved reflectometry and algorithmically eliminating diffraction from optical metrology |
| US9506965B2 (en) * | 2012-11-12 | 2016-11-29 | United Microelectronics Corp. | Alternately arranged overlay marks having asymmetric spacing and measurement thereof |
| TWI603216B (zh) | 2012-11-21 | 2017-10-21 | 克萊譚克公司 | 處理相容分段目標及設計方法 |
| JP6478974B2 (ja) | 2013-04-10 | 2019-03-06 | ケーエルエー−テンカー コーポレイション | 標的設計及び製造における誘導自己組織化 |
| US9740108B2 (en) * | 2013-05-27 | 2017-08-22 | Kla-Tencor Corporation | Scatterometry overlay metrology targets and methods |
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| KR102333504B1 (ko) | 2013-06-27 | 2021-12-01 | 케이엘에이 코포레이션 | 계측 타겟의 편광 측정 및 대응 타겟 설계 |
| US9726984B2 (en) * | 2013-07-09 | 2017-08-08 | Kla-Tencor Corporation | Aperture alignment in scatterometry metrology systems |
| CN106030414B (zh) * | 2014-02-21 | 2018-10-09 | Asml荷兰有限公司 | 目标布置的优化和相关的目标 |
| WO2015157464A1 (en) * | 2014-04-09 | 2015-10-15 | Kla-Tencor Corporation | Estimating and eliminating inter-cell process variation inaccuracy |
| US10415963B2 (en) * | 2014-04-09 | 2019-09-17 | Kla-Tencor Corporation | Estimating and eliminating inter-cell process variation inaccuracy |
| KR20160007192A (ko) | 2014-07-11 | 2016-01-20 | 삼성전자주식회사 | 오버레이 측정 방법, 오버레이 측정 시스템 및 이를 이용한 반도체 장치의 제조 방법 |
| US10228320B1 (en) | 2014-08-08 | 2019-03-12 | KLA—Tencor Corporation | Achieving a small pattern placement error in metrology targets |
| KR102574171B1 (ko) | 2014-08-29 | 2023-09-06 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 방법, 타겟 및 기판 |
| IL290735B2 (en) | 2014-11-26 | 2023-03-01 | Asml Netherlands Bv | Metrological method, computer product and system |
| WO2016123552A1 (en) | 2015-01-30 | 2016-08-04 | Kla-Tencor Corporation | Device metrology targets and methods |
| US10324379B2 (en) | 2015-06-23 | 2019-06-18 | Asml Netherlands B.V. | Lithographic apparatus and method |
| US9530199B1 (en) * | 2015-07-13 | 2016-12-27 | Applied Materials Israel Ltd | Technique for measuring overlay between layers of a multilayer structure |
| US9659873B2 (en) | 2015-08-26 | 2017-05-23 | United Microelectronics Corp. | Semiconductor structure with aligning mark and method of forming the same |
| EP3171396A1 (en) * | 2015-11-18 | 2017-05-24 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Method of determining an overlay error, manufacturing method and system for manufacturing of a multilayer semiconductor device, and semiconductor device manufactured thereby |
| US9633915B1 (en) * | 2016-03-01 | 2017-04-25 | Globalfoundries Inc. | Method of using dummy patterns for overlay target design and overlay control |
| CN117970750A (zh) | 2016-03-03 | 2024-05-03 | Asml荷兰有限公司 | 量测方法和光刻方法、光刻单元和计算机程序 |
| US9754895B1 (en) | 2016-03-07 | 2017-09-05 | Micron Technology, Inc. | Methods of forming semiconductor devices including determining misregistration between semiconductor levels and related apparatuses |
| US10761023B2 (en) | 2016-10-14 | 2020-09-01 | Kla-Tencor Corporation | Diffraction-based focus metrology |
| EP3339959A1 (en) * | 2016-12-23 | 2018-06-27 | ASML Netherlands B.V. | Method of determining a position of a feature |
| US10409171B2 (en) * | 2017-01-25 | 2019-09-10 | Kla-Tencor Corporation | Overlay control with non-zero offset prediction |
| TWI730050B (zh) * | 2017-02-15 | 2021-06-11 | 聯華電子股份有限公司 | 層疊對準標記與評估製程穩定度的方法 |
| US10732516B2 (en) * | 2017-03-01 | 2020-08-04 | Kla Tencor Corporation | Process robust overlay metrology based on optical scatterometry |
| US11073487B2 (en) * | 2017-05-11 | 2021-07-27 | Kla-Tencor Corporation | Methods and systems for characterization of an x-ray beam with high spatial resolution |
| CN107024841B (zh) * | 2017-05-16 | 2018-09-25 | 睿力集成电路有限公司 | 一种光刻光学式叠对量测图型结构 |
| US11112369B2 (en) * | 2017-06-19 | 2021-09-07 | Kla-Tencor Corporation | Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay |
| US11085754B2 (en) * | 2017-12-12 | 2021-08-10 | Kla Corporation | Enhancing metrology target information content |
| US10483214B2 (en) | 2018-01-03 | 2019-11-19 | Globalfoundries Inc. | Overlay structures |
| CN111542784B (zh) * | 2018-01-12 | 2025-05-06 | 科磊股份有限公司 | 具有倾斜周期性结构的计量目标及方法 |
| US10705435B2 (en) | 2018-01-12 | 2020-07-07 | Globalfoundries Inc. | Self-referencing and self-calibrating interference pattern overlay measurement |
| US10533848B2 (en) * | 2018-03-05 | 2020-01-14 | Kla-Tencor Corporation | Metrology and control of overlay and edge placement errors |
| WO2020141071A1 (en) * | 2018-12-31 | 2020-07-09 | Asml Netherlands B.V. | Method for calibrating a scanning charged particle microscope |
| US11075126B2 (en) | 2019-02-15 | 2021-07-27 | Kla-Tencor Corporation | Misregistration measurements using combined optical and electron beam technology |
| KR102748454B1 (ko) * | 2019-02-15 | 2024-12-30 | 케이엘에이 코포레이션 | 결합된 광학 및 전자빔 기술을 사용한 편심 측정 |
| US10804170B2 (en) | 2019-03-11 | 2020-10-13 | Globalfoundries Inc. | Device/health of line (HOL) aware eBeam based overlay (EBO OVL) structure |
| WO2020258116A1 (en) | 2019-06-27 | 2020-12-30 | Yangtze Memory Technologies Co., Ltd. | Marking pattern in forming staircase structure of three-dimensional memory device |
| US11914290B2 (en) | 2019-07-24 | 2024-02-27 | Kla Corporation | Overlay measurement targets design |
| US11256177B2 (en) | 2019-09-11 | 2022-02-22 | Kla Corporation | Imaging overlay targets using Moiré elements and rotational symmetry arrangements |
| WO2021054928A1 (en) | 2019-09-16 | 2021-03-25 | Kla Corporation | Periodic semiconductor device misregistration metrology system and method |
| US11809090B2 (en) * | 2020-01-30 | 2023-11-07 | Kla Corporation | Composite overlay metrology target |
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| US11487929B2 (en) | 2020-04-28 | 2022-11-01 | Kla Corporation | Target design process for overlay targets intended for multi-signal measurements |
| WO2021225587A1 (en) * | 2020-05-06 | 2021-11-11 | Kla Corporation | Inter-step feedforward process control in the manufacture of semiconductor devices |
| US11686576B2 (en) | 2020-06-04 | 2023-06-27 | Kla Corporation | Metrology target for one-dimensional measurement of periodic misregistration |
| US12100574B2 (en) * | 2020-07-01 | 2024-09-24 | Kla Corporation | Target and algorithm to measure overlay by modeling back scattering electrons on overlapping structures |
| CN112015061A (zh) * | 2020-08-27 | 2020-12-01 | 上海华力集成电路制造有限公司 | 一种套刻精度量测标记及其使用方法 |
| US20230333485A1 (en) * | 2020-09-28 | 2023-10-19 | Asml Netherlands B.V. | Target structure and associated methods and apparatus |
| EP4020084A1 (en) * | 2020-12-22 | 2022-06-29 | ASML Netherlands B.V. | Metrology method |
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| EP4053636A1 (en) * | 2021-03-02 | 2022-09-07 | ASML Netherlands B.V. | Alignment method |
| US11862524B2 (en) | 2021-06-28 | 2024-01-02 | Kla Corporation | Overlay mark design for electron beam overlay |
| CN113517178B (zh) * | 2021-07-08 | 2023-06-27 | 长鑫存储技术有限公司 | 半导体结构的制备方法及半导体结构 |
| US20230017392A1 (en) * | 2021-07-15 | 2023-01-19 | Changxin Memory Technologies, Inc. | Measurement mark, measurement layout, and measurement method |
| EP4202552B1 (en) | 2021-12-24 | 2024-04-17 | Imec VZW | Method and structure for determining an overlay error |
| US11796925B2 (en) | 2022-01-03 | 2023-10-24 | Kla Corporation | Scanning overlay metrology using overlay targets having multiple spatial frequencies |
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| US20240094639A1 (en) * | 2022-09-19 | 2024-03-21 | Kla Corporation | High-resolution evaluation of optical metrology targets for process control |
| US12092966B2 (en) | 2022-11-23 | 2024-09-17 | Kla Corporation | Device feature specific edge placement error (EPE) |
| US12235588B2 (en) | 2023-02-16 | 2025-02-25 | Kla Corporation | Scanning overlay metrology with high signal to noise ratio |
| KR20250090013A (ko) | 2023-12-12 | 2025-06-19 | 삼성전자주식회사 | 오버레이 기준 파장의 결정 방법 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070076205A1 (en) | 2005-09-30 | 2007-04-05 | Bernd Schulz | Structure and method for simultaneously determining an overlay accuracy and pattern placement error |
| US20120033215A1 (en) | 2010-08-03 | 2012-02-09 | Kla-Tecor Corporation | Multi-layer overlay metrology target and complimentary overlay metrology measurement systems |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02112223A (ja) * | 1988-10-21 | 1990-04-24 | Olympus Optical Co Ltd | アライメントマーク |
| US5805290A (en) | 1996-05-02 | 1998-09-08 | International Business Machines Corporation | Method of optical metrology of unresolved pattern arrays |
| US6023338A (en) | 1996-07-12 | 2000-02-08 | Bareket; Noah | Overlay alignment measurement of wafers |
| US5919714A (en) | 1998-05-06 | 1999-07-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Segmented box-in-box for improving back end overlay measurement |
| US6128089A (en) | 1998-07-28 | 2000-10-03 | International Business Machines Corporation | Combined segmented and nonsegmented bar-in-bar targets |
| DE19912971C1 (de) | 1999-03-23 | 2000-09-21 | Daimler Chrysler Ag | Verfahren zur Erfassung der Lichtleistung einer Sendediode einer optischen Überwachungseinheit sowie geeignete Schaltungsanordnung |
| JP3344403B2 (ja) | 2000-03-03 | 2002-11-11 | 日本電気株式会社 | 光学収差の測定用マスク及び光学収差の測定方法 |
| US6462818B1 (en) * | 2000-06-22 | 2002-10-08 | Kla-Tencor Corporation | Overlay alignment mark design |
| US7068833B1 (en) | 2000-08-30 | 2006-06-27 | Kla-Tencor Corporation | Overlay marks, methods of overlay mark design and methods of overlay measurements |
| US6486954B1 (en) | 2000-09-01 | 2002-11-26 | Kla-Tencor Technologies Corporation | Overlay alignment measurement mark |
| US7009704B1 (en) | 2000-10-26 | 2006-03-07 | Kla-Tencor Technologies Corporation | Overlay error detection |
| TW526573B (en) * | 2000-12-27 | 2003-04-01 | Koninkl Philips Electronics Nv | Method of measuring overlay |
| US7804994B2 (en) * | 2002-02-15 | 2010-09-28 | Kla-Tencor Technologies Corporation | Overlay metrology and control method |
| US7141450B2 (en) | 2002-04-08 | 2006-11-28 | Lucent Technologies Inc. | Flip-chip alignment method |
| DE10224164B4 (de) | 2002-05-31 | 2007-05-10 | Advanced Micro Devices, Inc., Sunnyvale | Eine zweidimensionale Struktur zum Bestimmen einer Überlagerungsgenauigkeit mittels Streuungsmessung |
| TWI227814B (en) * | 2002-09-20 | 2005-02-11 | Asml Netherlands Bv | Alignment system and methods for lithographic systems using at least two wavelengths |
| US7440105B2 (en) * | 2002-12-05 | 2008-10-21 | Kla-Tencor Technologies Corporation | Continuously varying offset mark and methods of determining overlay |
| US7180593B2 (en) | 2003-11-05 | 2007-02-20 | Macronix International Co., Ltd. | Overlay mark for aligning different layers on a semiconductor wafer |
| US20050286052A1 (en) * | 2004-06-23 | 2005-12-29 | Kevin Huggins | Elongated features for improved alignment process integration |
| WO2007040855A1 (en) * | 2005-09-30 | 2007-04-12 | Advanced Micro Devices, Inc. | Structure and method for simultaneously determining an overlay accuracy and pattern placement error |
| US7408642B1 (en) | 2006-02-17 | 2008-08-05 | Kla-Tencor Technologies Corporation | Registration target design for managing both reticle grid error and wafer overlay |
| JP2008218516A (ja) * | 2007-02-28 | 2008-09-18 | Toshiba Corp | パターン評価方法、評価マーク、それを用いた半導体装置の製造方法 |
| NL1036123A1 (nl) * | 2007-11-13 | 2009-05-14 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method. |
| US8148682B2 (en) * | 2009-12-29 | 2012-04-03 | Hitachi, Ltd. | Method and apparatus for pattern position and overlay measurement |
-
2013
- 2013-02-25 US US13/776,550 patent/US9093458B2/en active Active
- 2013-09-05 KR KR1020157008261A patent/KR102160840B1/ko active Active
- 2013-09-05 WO PCT/US2013/058278 patent/WO2014039689A1/en not_active Ceased
- 2013-09-05 JP JP2015531199A patent/JP6320387B2/ja active Active
- 2013-09-06 TW TW102132263A patent/TWI594294B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070076205A1 (en) | 2005-09-30 | 2007-04-05 | Bernd Schulz | Structure and method for simultaneously determining an overlay accuracy and pattern placement error |
| US20120033215A1 (en) | 2010-08-03 | 2012-02-09 | Kla-Tecor Corporation | Multi-layer overlay metrology target and complimentary overlay metrology measurement systems |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201419377A (zh) | 2014-05-16 |
| KR20150053770A (ko) | 2015-05-18 |
| US20140065736A1 (en) | 2014-03-06 |
| JP6320387B2 (ja) | 2018-05-09 |
| JP2015532733A (ja) | 2015-11-12 |
| TWI594294B (zh) | 2017-08-01 |
| US9093458B2 (en) | 2015-07-28 |
| WO2014039689A1 (en) | 2014-03-13 |
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