KR102145157B1 - 기재 상에 투명 전도체를 제조하는 방법 - Google Patents

기재 상에 투명 전도체를 제조하는 방법 Download PDF

Info

Publication number
KR102145157B1
KR102145157B1 KR1020157017885A KR20157017885A KR102145157B1 KR 102145157 B1 KR102145157 B1 KR 102145157B1 KR 1020157017885 A KR1020157017885 A KR 1020157017885A KR 20157017885 A KR20157017885 A KR 20157017885A KR 102145157 B1 KR102145157 B1 KR 102145157B1
Authority
KR
South Korea
Prior art keywords
layer
substrate
delete delete
conductive layer
patterned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020157017885A
Other languages
English (en)
Korean (ko)
Other versions
KR20150093208A (ko
Inventor
숀 씨 도즈
매튜 에스 스태이
미하일 엘 페쿠로프스키
매튜 에이치 프레이
마크 제이 펠레라이트
존 피 뱃졸드
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쓰리엠 이노베이티브 프로퍼티즈 캄파니 filed Critical 쓰리엠 이노베이티브 프로퍼티즈 캄파니
Publication of KR20150093208A publication Critical patent/KR20150093208A/ko
Application granted granted Critical
Publication of KR102145157B1 publication Critical patent/KR102145157B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B1/002—Devices comprising flexible or deformable elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
    • Y10S977/766—Bent wire, i.e. having nonliner longitudinal axis
    • Y10S977/767—Mesh structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/887—Nanoimprint lithography, i.e. nanostamp
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/953—Detector using nanostructure
    • Y10S977/956—Of mechanical property

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Non-Insulated Conductors (AREA)
  • Laminated Bodies (AREA)
  • Printing Methods (AREA)
KR1020157017885A 2012-12-07 2013-12-02 기재 상에 투명 전도체를 제조하는 방법 Expired - Fee Related KR102145157B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201261734793P 2012-12-07 2012-12-07
US61/734,793 2012-12-07
US201361782634P 2013-03-14 2013-03-14
US61/782,634 2013-03-14
US201361840876P 2013-06-28 2013-06-28
US61/840,876 2013-06-28
PCT/US2013/072624 WO2014088950A1 (en) 2012-12-07 2013-12-02 Method of making transparent conductors on a substrate

Publications (2)

Publication Number Publication Date
KR20150093208A KR20150093208A (ko) 2015-08-17
KR102145157B1 true KR102145157B1 (ko) 2020-08-18

Family

ID=50883903

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157017885A Expired - Fee Related KR102145157B1 (ko) 2012-12-07 2013-12-02 기재 상에 투명 전도체를 제조하는 방법

Country Status (8)

Country Link
US (2) US10254786B2 (https=)
EP (1) EP2929417A4 (https=)
JP (1) JP6700787B2 (https=)
KR (1) KR102145157B1 (https=)
CN (1) CN104838342B (https=)
BR (1) BR112015013033A2 (https=)
SG (1) SG11201504125UA (https=)
WO (1) WO2014088950A1 (https=)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3000917B1 (fr) * 2013-01-11 2015-02-20 Bobst Lyon Procede de commande, pour commander une machine de transformation, machine de transformation et programme d'ordinateur pour realiser un tel procede de commande
BR112016002093A2 (pt) 2013-07-31 2017-08-01 3M Innovative Properties Co ligação de componentes eletrônicos para condutores transparentes de nanofios dotados de um padrão
SG11201601075PA (en) 2013-08-28 2016-03-30 3M Innovative Properties Co Electronic assembly with fiducial marks for precision registration during subsequent processing steps
CN105593796B (zh) 2013-09-30 2019-01-04 3M创新有限公司 用于图案化的纳米线透明导体上的印刷导电图案的保护性涂层
WO2015069538A1 (en) 2013-11-06 2015-05-14 3M Innovative Properties Company Microcontact printing stamps with functional features
US10166571B2 (en) * 2013-12-10 2019-01-01 Lg Display Co., Ltd. Refining method for microstructure
TWI564762B (zh) * 2015-04-22 2017-01-01 恆顥科技股份有限公司 觸控薄膜疊層卷的製作方法與所製得之觸控薄膜疊層片
WO2017003789A1 (en) 2015-06-30 2017-01-05 3M Innovative Properties Company Electronic devices comprising a via and methods of forming such electronic devices
KR20180021828A (ko) 2015-06-30 2018-03-05 쓰리엠 이노베이티브 프로퍼티즈 캄파니 패터닝된 오버코팅층
KR20180033218A (ko) 2015-07-21 2018-04-02 쓰리엠 이노베이티브 프로퍼티즈 컴파니 전기전도성 필름, 조립체, 및 전기전도성 패턴에서 정전하를 제거하는 방법
KR102555869B1 (ko) * 2015-08-06 2023-07-13 삼성전자주식회사 도전체 및 그 제조 방법
CN208488734U (zh) 2015-08-21 2019-02-12 3M创新有限公司 包括金属迹线的透明导体
CN108604139B (zh) * 2015-12-04 2022-03-08 雷恩哈德库兹基金两合公司 膜以及用于制造膜的方法
KR20180098372A (ko) * 2016-03-18 2018-09-03 오사카 유니버시티 금속 나노와이어층이 형성된 기재 및 그 제조 방법
WO2017205097A1 (en) 2016-05-25 2017-11-30 3M Innovative Properties Company Substrate for touch sensor
JP6647399B2 (ja) * 2016-07-08 2020-02-14 旭化成株式会社 導電性フィルム、電子ペーパー、タッチパネル、及びフラットパネルディスプレイ
US20190357360A1 (en) * 2016-12-29 2019-11-21 3M Innovative Properties Company Methods for Preparing Electrically Conductive Patterns and Articles Containing Electrically Conductive Patterns
KR101841946B1 (ko) * 2017-02-24 2018-03-26 동우 화인켐 주식회사 장력 제어를 이용한 터치 센서 필름 제조방법
DE102017106055B4 (de) * 2017-03-21 2021-04-08 Tdk Corporation Trägersubstrat für stressempflindliches Bauelement und Verfahren zur Herstellung
EP3646069A1 (en) 2017-06-29 2020-05-06 3M Innovative Properties Company Article and methods of making the same
EP3717242A4 (en) 2017-11-30 2021-12-15 3M Innovative Properties Company SUBSTRATE INCLUDING A SELF-SUPPORTING THREE-LAYER STACK
US10058014B1 (en) 2017-12-13 2018-08-21 International Business Machines Corporation Conductive adhesive layer for gasket assembly
JP2021003806A (ja) * 2018-01-29 2021-01-14 スリーエム イノベイティブ プロパティズ カンパニー 糸状部材への印刷方法、及び糸状のこぎり
CN109871141B (zh) * 2018-12-29 2023-02-03 赣州市德普特科技有限公司 一种触摸屏制作工艺中的布线区保护方法
KR102755456B1 (ko) * 2019-01-04 2025-01-20 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
US11261529B2 (en) * 2020-03-31 2022-03-01 Futuretech Capital, Inc. Reduced visibility conductive micro mesh touch sensor
KR102461794B1 (ko) * 2020-08-13 2022-11-02 한국과학기술연구원 은 나노와이어 메쉬 전극 및 이의 제조방법
CN114496352A (zh) * 2020-11-12 2022-05-13 天材创新材料科技(厦门)有限公司 纳米银线保护层结构及其制备方法
US11961632B2 (en) 2020-12-04 2024-04-16 Korea Advanced Institute Of Science And Technology Fabrication method of conductive nanonetworks using mastermold
KR102628299B1 (ko) 2020-12-04 2024-01-24 한국과학기술원 마스터몰드를 이용한 투명 전도성 네트워크 제조방법
US12412678B2 (en) 2020-12-04 2025-09-09 Korea Advanced Institute Of Science And Technology Fabrication method of conductive nanonetworks through adaptation of sacrificial layer
KR102722103B1 (ko) 2020-12-04 2024-10-28 한국과학기술원 나노마스크를 이용한 투명 전도성 네트워크 제조방법
KR102722102B1 (ko) 2020-12-04 2024-10-28 한국과학기술원 희생층을 이용한 투명 전도성 네트워크 제조방법
US11513638B2 (en) 2020-12-18 2022-11-29 Cambrios Film Solutions Corporation Silver nanowire protection layer structure and manufacturing method thereof
CN113764564B (zh) * 2021-08-31 2024-01-23 Tcl华星光电技术有限公司 基板制备方法及膜片结构
KR102691766B1 (ko) * 2022-10-25 2024-08-05 서울대학교산학협력단 나노와이어 함유 패턴의 제조방법 및 이를 이용하여 제조된 투명 전극

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012178149A (ja) * 2011-02-04 2012-09-13 Shin Etsu Polymer Co Ltd 静電容量式センサーシートおよびその製造方法

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3654384A (en) 1970-05-25 1972-04-04 Magnavox Co Apparatus for modifying electrical signals
US4895630A (en) 1985-08-28 1990-01-23 W. H. Brady Co. Rapidly removable undercoating for vacuum deposition of patterned layers onto substrates
JPH05224818A (ja) 1992-02-10 1993-09-03 Matsushita Electric Ind Co Ltd タッチパネル装置
TWI231293B (en) * 1997-11-12 2005-04-21 Jsr Corp Transfer film
US6037005A (en) * 1998-05-12 2000-03-14 3M Innovative Properties Company Display substrate electrodes with auxiliary metal layers for enhanced conductivity
US20030148024A1 (en) 2001-10-05 2003-08-07 Kodas Toivo T. Low viscosity precursor compositons and methods for the depositon of conductive electronic features
TWI268813B (en) * 2002-04-24 2006-12-21 Sipix Imaging Inc Process for forming a patterned thin film conductive structure on a substrate
KR100486915B1 (ko) 2002-09-12 2005-05-03 엘지전자 주식회사 포토필링법을 이용한 플라즈마 디스플레이 패널의 전극제조방법
US6975067B2 (en) 2002-12-19 2005-12-13 3M Innovative Properties Company Organic electroluminescent device and encapsulation method
US7175876B2 (en) 2003-06-27 2007-02-13 3M Innovative Properties Company Patterned coating method employing polymeric coatings
US7416993B2 (en) * 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
US20050196707A1 (en) 2004-03-02 2005-09-08 Eastman Kodak Company Patterned conductive coatings
EP1836165B1 (en) 2004-12-28 2014-02-12 Gemin X Pharmaceuticals Canada Inc. Dipyrrole compounds, compositions, and methods for treating cancer or viral diseases
NZ565075A (en) * 2005-06-20 2011-05-27 Psma Dev Company Llc PSMA antibody-drug conjugates
SG150514A1 (en) 2005-08-12 2009-03-30 Cambrios Technologies Corp Nanowires-based transparent conductors
KR101095325B1 (ko) 2005-09-22 2011-12-16 후지필름 가부시키가이샤 광-투과성 전자파 차폐필름, 광-투과성 전자파 차폐필름의제조 방법, 디스플레이 패널용 필름, 디스플레이 패널용광학 필터 및 플라즈마 디스플레이 패널
US8264137B2 (en) 2006-01-03 2012-09-11 Samsung Electronics Co., Ltd. Curing binder material for carbon nanotube electron emission cathodes
US8461992B2 (en) 2006-05-12 2013-06-11 Solstice Medical, Llc RFID coupler for metallic implements
US20080048996A1 (en) 2006-08-11 2008-02-28 Unidym, Inc. Touch screen devices employing nanostructure networks
CN101589473B (zh) 2006-10-12 2011-10-05 凯博瑞奥斯技术公司 基于纳米线的透明导体及其应用
US8018568B2 (en) 2006-10-12 2011-09-13 Cambrios Technologies Corporation Nanowire-based transparent conductors and applications thereof
US7867907B2 (en) * 2006-10-17 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2008127313A2 (en) * 2006-11-17 2008-10-23 The Regents Of The University Of California Electrically conducting and optically transparent nanowire networks
JP4902344B2 (ja) * 2006-12-27 2012-03-21 富士フイルム株式会社 金属パターン材料の製造方法
KR100875168B1 (ko) * 2007-07-26 2008-12-22 주식회사 동부하이텍 반도체 소자의 금속배선 잔류 폴리머 제거방법
US8378046B2 (en) 2007-10-19 2013-02-19 3M Innovative Properties Company High refractive index pressure-sensitive adhesives
JP2011513534A (ja) 2008-02-26 2011-04-28 カンブリオス テクノロジーズ コーポレイション 導電性特徴のインクジェット蒸着のための方法および組成物
CN102017071B (zh) 2008-02-28 2013-12-18 3M创新有限公司 图案化基底上的导体的方法
JP5086886B2 (ja) * 2008-05-15 2012-11-28 富士通コンポーネント株式会社 座標検出装置の製造方法
EP2327007A4 (en) * 2008-08-01 2012-12-26 3M Innovative Properties Co TOUCH DEVICES HAVING COMPOSITE ELECTRODES
US8921726B2 (en) 2009-02-06 2014-12-30 Lg Chem, Ltd. Touch screen and manufacturing method thereof
US20100238133A1 (en) 2009-03-17 2010-09-23 Wintek Corporation Capacitive touch panel
JP2010271796A (ja) * 2009-05-19 2010-12-02 Optrex Corp 電極間接続構造およびタッチパネル
KR101362863B1 (ko) 2009-06-30 2014-02-14 디아이씨 가부시끼가이샤 투명 도전층 패턴의 형성 방법
US20110042126A1 (en) 2009-08-24 2011-02-24 Cambrios Technologies Corporation Contact resistance measurement for resistance linearity in nanostructure thin films
CN101699376B (zh) * 2009-09-04 2011-09-14 深超光电（深圳）有限公司 触控面板及触控面板的检测方法
US20110057905A1 (en) * 2009-09-04 2011-03-10 Hong-Chih Yu Touch Panel and Inspection Method Thereof
KR101073280B1 (ko) 2010-04-01 2011-10-12 삼성모바일디스플레이주식회사 터치 스크린 패널 및 이를 구비한 영상표시장치
US8236626B2 (en) * 2010-04-15 2012-08-07 The Board Of Trustees Of The Leland Stanford Junior University Narrow graphene nanoribbons from carbon nanotubes
JP5857051B2 (ja) * 2010-08-23 2016-02-10 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 不透明導電性領域の自己整合被覆
KR101367569B1 (ko) * 2010-12-29 2014-02-28 주식회사 엘지화학 터치 스크린 및 이의 제조방법
US8558807B2 (en) 2011-02-15 2013-10-15 Teh-Zheng Lin Transparent touch panel
JP2012182005A (ja) 2011-03-01 2012-09-20 Nitto Denko Corp 有機エレクトロルミネッセンス素子の製法
US8854326B2 (en) 2011-03-10 2014-10-07 Wintek Corporation Touch panel and touch-sensitive display device
JP5774686B2 (ja) * 2011-04-26 2015-09-09 日本メクトロン株式会社 透明プリント配線板の製造方法、および透明タッチパネルの製造方法
KR20120127556A (ko) * 2011-05-14 2012-11-22 정병현 투명 도전막 에칭 방법
JP5806066B2 (ja) 2011-09-30 2015-11-10 富士フイルム株式会社 電極パターン、タッチパネル、液晶表示装置及び、有機ｅｌディスプレイ
KR101373044B1 (ko) * 2012-04-19 2014-03-11 삼성디스플레이 주식회사 터치 스크린 패널
EP3061122A4 (en) 2013-10-23 2017-08-16 3M Innovative Properties Company System and method for making a textured film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012178149A (ja) * 2011-02-04 2012-09-13 Shin Etsu Polymer Co Ltd 静電容量式センサーシートおよびその製造方法

Also Published As

Publication number Publication date
JP6700787B2 (ja) 2020-05-27
KR20150093208A (ko) 2015-08-17
US10831233B2 (en) 2020-11-10
CN104838342B (zh) 2018-03-13
US20150316955A1 (en) 2015-11-05
CN104838342A (zh) 2015-08-12
EP2929417A1 (en) 2015-10-14
WO2014088950A1 (en) 2014-06-12
JP2016509332A (ja) 2016-03-24
EP2929417A4 (en) 2016-07-20
US20190187746A1 (en) 2019-06-20
BR112015013033A2 (pt) 2017-07-11
SG11201504125UA (en) 2015-06-29
US10254786B2 (en) 2019-04-09

Similar Documents

Publication Publication Date Title
KR102145157B1 (ko) 기재 상에 투명 전도체를 제조하는 방법
EP3028126B1 (en) Bonding electronic components to patterned nanowire transparent conductors
JP6457528B2 (ja) 以降の処理工程中における、正確な位置合わせのための、基準マークを備える電子アセンブリ
US20190114003A1 (en) Nanowire contact pads with enhanced adhesion to metal interconnects
KR102264357B1 (ko) 패턴화된 나노와이어 투명 전도체 상의 인쇄된 전도성 패턴을 위한 보호 코팅
US11284521B2 (en) Electronic devices comprising a via and methods of forming such electronic devices
WO2018122745A1 (en) Methods for preparing electrically conductive patterns and articles containing electrically conductive patterns
US20140262443A1 (en) Hybrid patterned nanostructure transparent conductors

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20230812

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20230812