KR102113245B1 - 에피택셜 소스/드레인을 갖는 반도체 디바이스 - Google Patents

에피택셜 소스/드레인을 갖는 반도체 디바이스 Download PDF

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KR102113245B1
KR102113245B1 KR1020180011357A KR20180011357A KR102113245B1 KR 102113245 B1 KR102113245 B1 KR 102113245B1 KR 1020180011357 A KR1020180011357 A KR 1020180011357A KR 20180011357 A KR20180011357 A KR 20180011357A KR 102113245 B1 KR102113245 B1 KR 102113245B1
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South Korea
Prior art keywords
sias
layer
source
fin
gate structure
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KR1020180011357A
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English (en)
Korean (ko)
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KR20190055677A (ko
Inventor
치아-타 유
쉬엥-첸 왕
웨이-유안 루
치엔-이 쿠오
리-리 수
펭-쳉 양
옌-밍 첸
사이-후이 영
Original Assignee
타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드
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Priority claimed from US15/814,129 external-priority patent/US10529803B2/en
Application filed by 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 filed Critical 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드
Publication of KR20190055677A publication Critical patent/KR20190055677A/ko
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Publication of KR102113245B1 publication Critical patent/KR102113245B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7855—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with at least two independent gates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020180011357A 2017-11-15 2018-01-30 에피택셜 소스/드레인을 갖는 반도체 디바이스 KR102113245B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/814,129 US10529803B2 (en) 2016-01-04 2017-11-15 Semiconductor device with epitaxial source/drain
US15/814,129 2017-11-15

Publications (2)

Publication Number Publication Date
KR20190055677A KR20190055677A (ko) 2019-05-23
KR102113245B1 true KR102113245B1 (ko) 2020-05-21

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KR1020180011357A KR102113245B1 (ko) 2017-11-15 2018-01-30 에피택셜 소스/드레인을 갖는 반도체 디바이스

Country Status (4)

Country Link
KR (1) KR102113245B1 (de)
CN (1) CN109786446B (de)
DE (1) DE102018100114B4 (de)
TW (1) TWI688099B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11489062B2 (en) 2019-05-31 2022-11-01 Taiwan Semiconductor Manufacturing Co., Ltd Optimized proximity profile for strained source/drain feature and method of fabricating thereof
DE102020112695A1 (de) 2019-05-31 2020-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Optimiertes näheprofil für verspanntes source/drain-merkmal und verfahren zu dessen herstellung
US11133417B1 (en) * 2020-03-16 2021-09-28 Globalfoundries U.S. Inc. Transistors with a sectioned epitaxial semiconductor layer
US11757010B2 (en) 2020-04-28 2023-09-12 Taiwan Semiconductor Manufacturing Company Limited Multi-stage etching process for contact formation in a semiconductor device
TWI770956B (zh) * 2020-04-28 2022-07-11 台灣積體電路製造股份有限公司 半導體裝置與其製作方法
US11515313B2 (en) 2020-06-22 2022-11-29 Taiwan Semiconductor Manufacturing Company Limited Gated ferroelectric memory cells for memory cell array and methods of forming the same
US11482594B2 (en) 2020-08-27 2022-10-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with backside power rail and method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006005373A (ja) 2005-07-27 2006-01-05 Toshiba Corp 半導体装置の製造方法
US20170194321A1 (en) * 2016-01-04 2017-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with epitaxial source/drain

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7781799B2 (en) * 2007-10-24 2010-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain strained layers
US9263342B2 (en) * 2012-03-02 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having a strained region
US8785285B2 (en) * 2012-03-08 2014-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
US9368628B2 (en) * 2012-07-05 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET with high mobility and strain channel
CN106158654B (zh) * 2015-04-20 2019-04-26 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
CN107275210B (zh) * 2016-04-06 2023-05-02 联华电子股份有限公司 半导体元件及其制作方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006005373A (ja) 2005-07-27 2006-01-05 Toshiba Corp 半導体装置の製造方法
US20170194321A1 (en) * 2016-01-04 2017-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with epitaxial source/drain

Also Published As

Publication number Publication date
DE102018100114A1 (de) 2019-05-16
KR20190055677A (ko) 2019-05-23
CN109786446A (zh) 2019-05-21
TW201933613A (zh) 2019-08-16
DE102018100114B4 (de) 2020-07-23
TWI688099B (zh) 2020-03-11
CN109786446B (zh) 2022-11-25

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