KR102105730B1 - 비대칭 게이트들을 이용하여 양방향 전하 전송을 제공하는 매트릭스 이미지 센서 - Google Patents

비대칭 게이트들을 이용하여 양방향 전하 전송을 제공하는 매트릭스 이미지 센서 Download PDF

Info

Publication number
KR102105730B1
KR102105730B1 KR1020147029985A KR20147029985A KR102105730B1 KR 102105730 B1 KR102105730 B1 KR 102105730B1 KR 1020147029985 A KR1020147029985 A KR 1020147029985A KR 20147029985 A KR20147029985 A KR 20147029985A KR 102105730 B1 KR102105730 B1 KR 102105730B1
Authority
KR
South Korea
Prior art keywords
gates
photodiode
gate
charges
photodiodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020147029985A
Other languages
English (en)
Korean (ko)
Other versions
KR20150017698A (ko
Inventor
프레드리끄 마이에르
Original Assignee
텔레다인 이2브이 세미컨덕터스 에스에이에스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 텔레다인 이2브이 세미컨덕터스 에스에이에스 filed Critical 텔레다인 이2브이 세미컨덕터스 에스에이에스
Publication of KR20150017698A publication Critical patent/KR20150017698A/ko
Application granted granted Critical
Publication of KR102105730B1 publication Critical patent/KR102105730B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/152—One-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1538—Time-delay and integration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/156—CCD or CID colour image sensors

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020147029985A 2012-05-03 2013-04-11 비대칭 게이트들을 이용하여 양방향 전하 전송을 제공하는 매트릭스 이미지 센서 Expired - Fee Related KR102105730B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1254070A FR2990299B1 (fr) 2012-05-03 2012-05-03 Capteur d'image matriciel a transfert de charges bidirectionnel a grilles dissymetriques
FR1254070 2012-05-03
PCT/EP2013/057546 WO2013164169A1 (fr) 2012-05-03 2013-04-11 Capteur d'image matriciel a transfert de charges bidirectionnel a grilles dissymetriques

Publications (2)

Publication Number Publication Date
KR20150017698A KR20150017698A (ko) 2015-02-17
KR102105730B1 true KR102105730B1 (ko) 2020-04-28

Family

ID=46754595

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147029985A Expired - Fee Related KR102105730B1 (ko) 2012-05-03 2013-04-11 비대칭 게이트들을 이용하여 양방향 전하 전송을 제공하는 매트릭스 이미지 센서

Country Status (9)

Country Link
US (1) US9093353B2 (https=)
EP (1) EP2845231B1 (https=)
JP (1) JP6133973B2 (https=)
KR (1) KR102105730B1 (https=)
CN (1) CN104303306B (https=)
FR (1) FR2990299B1 (https=)
IL (1) IL235437B (https=)
IN (1) IN2014DN08844A (https=)
WO (1) WO2013164169A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2999387B2 (ja) 1995-02-22 2000-01-17 日本鋼管株式会社 チタン合金製ゴルフクラブヘッドおよびその製造方法
DE112016006634T5 (de) * 2016-03-23 2018-12-06 Psemi Corporation Anliegender bodykontakt für soi-transistor
KR20240042465A (ko) * 2021-08-12 2024-04-02 레니쇼우 피엘씨 위치 인코더 장치
CN119008646B (zh) * 2024-10-24 2025-01-24 合肥晶合集成电路股份有限公司 背照式图像传感器及其制备方法、电子设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011144459A1 (fr) * 2010-05-18 2011-11-24 E2V Semiconductors Capteur d'image matriciel a transfert de charges a grille dissymetrique

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3474638B2 (ja) * 1994-06-30 2003-12-08 株式会社東芝 固体撮像装置
US6906749B1 (en) 1998-09-16 2005-06-14 Dalsa, Inc. CMOS TDI image sensor
US6465820B1 (en) * 1998-09-16 2002-10-15 Dalsa, Inc. CMOS compatible single phase CCD charge transfer device
US6633058B1 (en) * 1999-07-26 2003-10-14 Dalsa, Inc. Variable reticulation time delay and integrate sensor
JP2003511920A (ja) 1999-10-05 2003-03-25 カリフォルニア インスティテュート オブ テクノロジー 能動画素センサによる時間遅延積分画像形成
US20020097330A1 (en) * 2001-01-25 2002-07-25 Spears Kurt E. Photosensor array using segmented charge transfer gates to improve processing time for small images
US8446508B2 (en) * 2005-07-27 2013-05-21 Sony Corporation Solid state imaging device with optimized locations of internal electrical components
FR2906080B1 (fr) 2006-09-19 2008-11-28 E2V Semiconductors Soc Par Act Capteur d'image en defilement par integrations successives et sommation, a pixels cmos actifs
US7923763B2 (en) 2007-03-08 2011-04-12 Teledyne Licensing, Llc Two-dimensional time delay integration visible CMOS image sensor
JP2009033286A (ja) * 2007-07-25 2009-02-12 Advanced Mask Inspection Technology Kk 蓄積型センサの駆動方法および蓄積型センサ
FR2924532B1 (fr) * 2007-11-30 2009-12-18 E2V Semiconductors Capteur d'image a pixel a quatre ou cinq transistors avec reduction de bruit de reinitialisation
JP5300577B2 (ja) * 2009-04-23 2013-09-25 三菱電機株式会社 Ｔｄｉ方式のイメージセンサ、及び該イメージセンサの駆動方法
KR101621278B1 (ko) * 2009-07-27 2016-05-17 삼성전자주식회사 광 감지 장치 및 그 단위 픽셀
JP5568934B2 (ja) * 2009-09-29 2014-08-13 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、電子機器、レンズアレイ
FR2953642B1 (fr) * 2009-12-09 2012-07-13 E2V Semiconductors Capteur d'image multilineaire a integration de charges.
JP5509846B2 (ja) * 2009-12-28 2014-06-04 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
FR2959902B1 (fr) * 2010-05-04 2013-08-23 E2V Semiconductors Capteur d'image lineaire a defilement et sommation analogique et numerique et procede correspondant
FR2961347B1 (fr) * 2010-06-15 2012-08-24 E2V Semiconductors Capteur d'image a multiplication d'electrons
FR2973162B1 (fr) * 2011-03-23 2013-11-22 E2V Semiconductors Capteur d'image a tres haute dynamique

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011144459A1 (fr) * 2010-05-18 2011-11-24 E2V Semiconductors Capteur d'image matriciel a transfert de charges a grille dissymetrique

Also Published As

Publication number Publication date
FR2990299B1 (fr) 2014-05-09
CN104303306A (zh) 2015-01-21
JP6133973B2 (ja) 2017-05-24
EP2845231B1 (fr) 2016-04-06
IN2014DN08844A (https=) 2015-05-22
KR20150017698A (ko) 2015-02-17
JP2015524159A (ja) 2015-08-20
FR2990299A1 (fr) 2013-11-08
CN104303306B (zh) 2017-04-12
US20150123174A1 (en) 2015-05-07
US9093353B2 (en) 2015-07-28
IL235437B (en) 2019-05-30
IL235437A0 (en) 2014-12-31
WO2013164169A1 (fr) 2013-11-07
EP2845231A1 (fr) 2015-03-11

Similar Documents

Publication Publication Date Title
JP6210559B2 (ja) 半導体素子及び固体撮像装置
JP6044044B2 (ja) 非対称ゲート式マトリクス電荷転送イメージ・センサ
JP3647390B2 (ja) 電荷転送装置、固体撮像装置及び撮像システム
KR101788890B1 (ko) 전하 인티그레이션을 가지는 멀티리니어 이미지 센서
KR101968340B1 (ko) 전하-적분 다중선형 이미지 센서
WO1992014265A2 (en) Charge-coupled device (ccd) image sensor
KR102105730B1 (ko) 비대칭 게이트들을 이용하여 양방향 전하 전송을 제공하는 매트릭스 이미지 센서
KR20170096601A (ko) Hdr 픽셀
KR900005875B1 (ko) 고체 촬성 소자
US5703642A (en) Full depletion mode clocking of solid-state image sensors for improved MTF performance
TWI711167B (zh) 具有雙閘極植入之電荷轉移影像感測器
JP2020080377A (ja) 固体撮像装置
KR20200068135A (ko) 이미지 센서 및 이를 이용한 거리 측정 센서
US8643063B2 (en) Multidirectional two-phase charge-coupled device
KR960006200B1 (ko) 고체 촬상장치 및 그 제조방법
JPH0263314B2 (https=)

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20230423

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20230423

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000