CN104303306B - 具有不对称栅极的提供双向电荷转移的矩阵图像传感器 - Google Patents

具有不对称栅极的提供双向电荷转移的矩阵图像传感器 Download PDF

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Publication number
CN104303306B
CN104303306B CN201380023055.8A CN201380023055A CN104303306B CN 104303306 B CN104303306 B CN 104303306B CN 201380023055 A CN201380023055 A CN 201380023055A CN 104303306 B CN104303306 B CN 104303306B
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China
Prior art keywords
gate
photodiode
charge
gates
potential
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Expired - Fee Related
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CN201380023055.8A
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English (en)
Chinese (zh)
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CN104303306A (zh
Inventor
F·迈耶
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Spy Encourages Da Yituwei Semiconductors Ltd Co
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e2v Semiconductors SAS
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/152—One-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1538—Time-delay and integration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/156—CCD or CID colour image sensors

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN201380023055.8A 2012-05-03 2013-04-11 具有不对称栅极的提供双向电荷转移的矩阵图像传感器 Expired - Fee Related CN104303306B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1254070A FR2990299B1 (fr) 2012-05-03 2012-05-03 Capteur d'image matriciel a transfert de charges bidirectionnel a grilles dissymetriques
FR1254070 2012-05-03
PCT/EP2013/057546 WO2013164169A1 (fr) 2012-05-03 2013-04-11 Capteur d'image matriciel a transfert de charges bidirectionnel a grilles dissymetriques

Publications (2)

Publication Number Publication Date
CN104303306A CN104303306A (zh) 2015-01-21
CN104303306B true CN104303306B (zh) 2017-04-12

Family

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Family Applications (1)

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CN201380023055.8A Expired - Fee Related CN104303306B (zh) 2012-05-03 2013-04-11 具有不对称栅极的提供双向电荷转移的矩阵图像传感器

Country Status (9)

Country Link
US (1) US9093353B2 (https=)
EP (1) EP2845231B1 (https=)
JP (1) JP6133973B2 (https=)
KR (1) KR102105730B1 (https=)
CN (1) CN104303306B (https=)
FR (1) FR2990299B1 (https=)
IL (1) IL235437B (https=)
IN (1) IN2014DN08844A (https=)
WO (1) WO2013164169A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2999387B2 (ja) 1995-02-22 2000-01-17 日本鋼管株式会社 チタン合金製ゴルフクラブヘッドおよびその製造方法
DE112016006634T5 (de) * 2016-03-23 2018-12-06 Psemi Corporation Anliegender bodykontakt für soi-transistor
KR20240042465A (ko) * 2021-08-12 2024-04-02 레니쇼우 피엘씨 위치 인코더 장치
CN119008646B (zh) * 2024-10-24 2025-01-24 合肥晶合集成电路股份有限公司 背照式图像传感器及其制备方法、电子设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6465820B1 (en) * 1998-09-16 2002-10-15 Dalsa, Inc. CMOS compatible single phase CCD charge transfer device
US6633058B1 (en) * 1999-07-26 2003-10-14 Dalsa, Inc. Variable reticulation time delay and integrate sensor
US20070064137A1 (en) * 2005-07-27 2007-03-22 Sony Corporation Solid state imaging device, method of producing the same and camera relating to same
WO2011144459A1 (fr) * 2010-05-18 2011-11-24 E2V Semiconductors Capteur d'image matriciel a transfert de charges a grille dissymetrique
CN102695000A (zh) * 2011-03-23 2012-09-26 E2V半导体公司 具有非常高的动态范围的图像传感器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3474638B2 (ja) * 1994-06-30 2003-12-08 株式会社東芝 固体撮像装置
US6906749B1 (en) 1998-09-16 2005-06-14 Dalsa, Inc. CMOS TDI image sensor
JP2003511920A (ja) 1999-10-05 2003-03-25 カリフォルニア インスティテュート オブ テクノロジー 能動画素センサによる時間遅延積分画像形成
US20020097330A1 (en) * 2001-01-25 2002-07-25 Spears Kurt E. Photosensor array using segmented charge transfer gates to improve processing time for small images
FR2906080B1 (fr) 2006-09-19 2008-11-28 E2V Semiconductors Soc Par Act Capteur d'image en defilement par integrations successives et sommation, a pixels cmos actifs
US7923763B2 (en) 2007-03-08 2011-04-12 Teledyne Licensing, Llc Two-dimensional time delay integration visible CMOS image sensor
JP2009033286A (ja) * 2007-07-25 2009-02-12 Advanced Mask Inspection Technology Kk 蓄積型センサの駆動方法および蓄積型センサ
FR2924532B1 (fr) * 2007-11-30 2009-12-18 E2V Semiconductors Capteur d'image a pixel a quatre ou cinq transistors avec reduction de bruit de reinitialisation
JP5300577B2 (ja) * 2009-04-23 2013-09-25 三菱電機株式会社 Ｔｄｉ方式のイメージセンサ、及び該イメージセンサの駆動方法
KR101621278B1 (ko) * 2009-07-27 2016-05-17 삼성전자주식회사 광 감지 장치 및 그 단위 픽셀
JP5568934B2 (ja) * 2009-09-29 2014-08-13 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、電子機器、レンズアレイ
FR2953642B1 (fr) * 2009-12-09 2012-07-13 E2V Semiconductors Capteur d'image multilineaire a integration de charges.
JP5509846B2 (ja) * 2009-12-28 2014-06-04 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
FR2959902B1 (fr) * 2010-05-04 2013-08-23 E2V Semiconductors Capteur d'image lineaire a defilement et sommation analogique et numerique et procede correspondant
FR2961347B1 (fr) * 2010-06-15 2012-08-24 E2V Semiconductors Capteur d'image a multiplication d'electrons

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6465820B1 (en) * 1998-09-16 2002-10-15 Dalsa, Inc. CMOS compatible single phase CCD charge transfer device
US6633058B1 (en) * 1999-07-26 2003-10-14 Dalsa, Inc. Variable reticulation time delay and integrate sensor
US20070064137A1 (en) * 2005-07-27 2007-03-22 Sony Corporation Solid state imaging device, method of producing the same and camera relating to same
WO2011144459A1 (fr) * 2010-05-18 2011-11-24 E2V Semiconductors Capteur d'image matriciel a transfert de charges a grille dissymetrique
CN102695000A (zh) * 2011-03-23 2012-09-26 E2V半导体公司 具有非常高的动态范围的图像传感器

Also Published As

Publication number Publication date
FR2990299B1 (fr) 2014-05-09
CN104303306A (zh) 2015-01-21
JP6133973B2 (ja) 2017-05-24
EP2845231B1 (fr) 2016-04-06
IN2014DN08844A (https=) 2015-05-22
KR20150017698A (ko) 2015-02-17
JP2015524159A (ja) 2015-08-20
FR2990299A1 (fr) 2013-11-08
US20150123174A1 (en) 2015-05-07
US9093353B2 (en) 2015-07-28
KR102105730B1 (ko) 2020-04-28
IL235437B (en) 2019-05-30
IL235437A0 (en) 2014-12-31
WO2013164169A1 (fr) 2013-11-07
EP2845231A1 (fr) 2015-03-11

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