FR2990299B1 - Capteur d'image matriciel a transfert de charges bidirectionnel a grilles dissymetriques - Google Patents

Capteur d'image matriciel a transfert de charges bidirectionnel a grilles dissymetriques

Info

Publication number
FR2990299B1
FR2990299B1 FR1254070A FR1254070A FR2990299B1 FR 2990299 B1 FR2990299 B1 FR 2990299B1 FR 1254070 A FR1254070 A FR 1254070A FR 1254070 A FR1254070 A FR 1254070A FR 2990299 B1 FR2990299 B1 FR 2990299B1
Authority
FR
France
Prior art keywords
dissymetric
grids
image sensor
matrix image
way charging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1254070A
Other languages
English (en)
French (fr)
Other versions
FR2990299A1 (fr
Inventor
Frederic Mayer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne e2v Semiconductors SAS
Original Assignee
e2v Semiconductors SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1254070A priority Critical patent/FR2990299B1/fr
Application filed by e2v Semiconductors SAS filed Critical e2v Semiconductors SAS
Priority to KR1020147029985A priority patent/KR102105730B1/ko
Priority to PCT/EP2013/057546 priority patent/WO2013164169A1/fr
Priority to CN201380023055.8A priority patent/CN104303306B/zh
Priority to EP13714967.0A priority patent/EP2845231B1/fr
Priority to US14/397,725 priority patent/US9093353B2/en
Priority to JP2015509353A priority patent/JP6133973B2/ja
Publication of FR2990299A1 publication Critical patent/FR2990299A1/fr
Application granted granted Critical
Publication of FR2990299B1 publication Critical patent/FR2990299B1/fr
Priority to IN8844DEN2014 priority patent/IN2014DN08844A/en
Priority to IL235437A priority patent/IL235437B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/152—One-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1538—Time-delay and integration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/156—CCD or CID colour image sensors
FR1254070A 2012-05-03 2012-05-03 Capteur d'image matriciel a transfert de charges bidirectionnel a grilles dissymetriques Expired - Fee Related FR2990299B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR1254070A FR2990299B1 (fr) 2012-05-03 2012-05-03 Capteur d'image matriciel a transfert de charges bidirectionnel a grilles dissymetriques
PCT/EP2013/057546 WO2013164169A1 (fr) 2012-05-03 2013-04-11 Capteur d'image matriciel a transfert de charges bidirectionnel a grilles dissymetriques
CN201380023055.8A CN104303306B (zh) 2012-05-03 2013-04-11 具有不对称栅极的提供双向电荷转移的矩阵图像传感器
EP13714967.0A EP2845231B1 (fr) 2012-05-03 2013-04-11 Capteur d'image matriciel a transfert de charges bidirectionnel a grilles dissymetriques
KR1020147029985A KR102105730B1 (ko) 2012-05-03 2013-04-11 비대칭 게이트들을 이용하여 양방향 전하 전송을 제공하는 매트릭스 이미지 센서
US14/397,725 US9093353B2 (en) 2012-05-03 2013-04-11 Matrix image sensor providing bidirectional charge transfer with asymmetric gates
JP2015509353A JP6133973B2 (ja) 2012-05-03 2013-04-11 非対称ゲートを備えた双方向電荷転送を実現するマトリクス画像センサ
IN8844DEN2014 IN2014DN08844A (https=) 2012-05-03 2014-10-21
IL235437A IL235437B (en) 2012-05-03 2014-11-02 A matrix image sensor that allows bidirectional charge transfer with asymmetric gates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1254070A FR2990299B1 (fr) 2012-05-03 2012-05-03 Capteur d'image matriciel a transfert de charges bidirectionnel a grilles dissymetriques

Publications (2)

Publication Number Publication Date
FR2990299A1 FR2990299A1 (fr) 2013-11-08
FR2990299B1 true FR2990299B1 (fr) 2014-05-09

Family

ID=46754595

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1254070A Expired - Fee Related FR2990299B1 (fr) 2012-05-03 2012-05-03 Capteur d'image matriciel a transfert de charges bidirectionnel a grilles dissymetriques

Country Status (9)

Country Link
US (1) US9093353B2 (https=)
EP (1) EP2845231B1 (https=)
JP (1) JP6133973B2 (https=)
KR (1) KR102105730B1 (https=)
CN (1) CN104303306B (https=)
FR (1) FR2990299B1 (https=)
IL (1) IL235437B (https=)
IN (1) IN2014DN08844A (https=)
WO (1) WO2013164169A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2999387B2 (ja) 1995-02-22 2000-01-17 日本鋼管株式会社 チタン合金製ゴルフクラブヘッドおよびその製造方法
DE112016006634T5 (de) * 2016-03-23 2018-12-06 Psemi Corporation Anliegender bodykontakt für soi-transistor
KR20240042465A (ko) * 2021-08-12 2024-04-02 레니쇼우 피엘씨 위치 인코더 장치
CN119008646B (zh) * 2024-10-24 2025-01-24 合肥晶合集成电路股份有限公司 背照式图像传感器及其制备方法、电子设备

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3474638B2 (ja) * 1994-06-30 2003-12-08 株式会社東芝 固体撮像装置
US6906749B1 (en) 1998-09-16 2005-06-14 Dalsa, Inc. CMOS TDI image sensor
US6465820B1 (en) * 1998-09-16 2002-10-15 Dalsa, Inc. CMOS compatible single phase CCD charge transfer device
US6633058B1 (en) * 1999-07-26 2003-10-14 Dalsa, Inc. Variable reticulation time delay and integrate sensor
JP2003511920A (ja) 1999-10-05 2003-03-25 カリフォルニア インスティテュート オブ テクノロジー 能動画素センサによる時間遅延積分画像形成
US20020097330A1 (en) * 2001-01-25 2002-07-25 Spears Kurt E. Photosensor array using segmented charge transfer gates to improve processing time for small images
US8446508B2 (en) * 2005-07-27 2013-05-21 Sony Corporation Solid state imaging device with optimized locations of internal electrical components
FR2906080B1 (fr) 2006-09-19 2008-11-28 E2V Semiconductors Soc Par Act Capteur d'image en defilement par integrations successives et sommation, a pixels cmos actifs
US7923763B2 (en) 2007-03-08 2011-04-12 Teledyne Licensing, Llc Two-dimensional time delay integration visible CMOS image sensor
JP2009033286A (ja) * 2007-07-25 2009-02-12 Advanced Mask Inspection Technology Kk 蓄積型センサの駆動方法および蓄積型センサ
FR2924532B1 (fr) * 2007-11-30 2009-12-18 E2V Semiconductors Capteur d'image a pixel a quatre ou cinq transistors avec reduction de bruit de reinitialisation
JP5300577B2 (ja) * 2009-04-23 2013-09-25 三菱電機株式会社 Ｔｄｉ方式のイメージセンサ、及び該イメージセンサの駆動方法
KR101621278B1 (ko) * 2009-07-27 2016-05-17 삼성전자주식회사 광 감지 장치 및 그 단위 픽셀
JP5568934B2 (ja) * 2009-09-29 2014-08-13 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、電子機器、レンズアレイ
FR2953642B1 (fr) * 2009-12-09 2012-07-13 E2V Semiconductors Capteur d'image multilineaire a integration de charges.
JP5509846B2 (ja) * 2009-12-28 2014-06-04 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
FR2959902B1 (fr) * 2010-05-04 2013-08-23 E2V Semiconductors Capteur d'image lineaire a defilement et sommation analogique et numerique et procede correspondant
FR2960341B1 (fr) 2010-05-18 2012-05-11 E2V Semiconductors Capteur d'image matriciel a transfert de charges a grille dissymetrique.
FR2961347B1 (fr) * 2010-06-15 2012-08-24 E2V Semiconductors Capteur d'image a multiplication d'electrons
FR2973162B1 (fr) * 2011-03-23 2013-11-22 E2V Semiconductors Capteur d'image a tres haute dynamique

Also Published As

Publication number Publication date
CN104303306A (zh) 2015-01-21
JP6133973B2 (ja) 2017-05-24
EP2845231B1 (fr) 2016-04-06
IN2014DN08844A (https=) 2015-05-22
KR20150017698A (ko) 2015-02-17
JP2015524159A (ja) 2015-08-20
FR2990299A1 (fr) 2013-11-08
CN104303306B (zh) 2017-04-12
US20150123174A1 (en) 2015-05-07
US9093353B2 (en) 2015-07-28
KR102105730B1 (ko) 2020-04-28
IL235437B (en) 2019-05-30
IL235437A0 (en) 2014-12-31
WO2013164169A1 (fr) 2013-11-07
EP2845231A1 (fr) 2015-03-11

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Year of fee payment: 5

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Effective date: 20180131