IN2014DN08844A - - Google Patents
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- Publication number
- IN2014DN08844A IN2014DN08844A IN8844DEN2014A IN2014DN08844A IN 2014DN08844 A IN2014DN08844 A IN 2014DN08844A IN 8844DEN2014 A IN8844DEN2014 A IN 8844DEN2014A IN 2014DN08844 A IN2014DN08844 A IN 2014DN08844A
- Authority
- IN
- India
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/152—One-dimensional array CCD image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
- H10F39/1538—Time-delay and integration
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/156—CCD or CID colour image sensors
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1254070A FR2990299B1 (fr) | 2012-05-03 | 2012-05-03 | Capteur d'image matriciel a transfert de charges bidirectionnel a grilles dissymetriques |
| PCT/EP2013/057546 WO2013164169A1 (fr) | 2012-05-03 | 2013-04-11 | Capteur d'image matriciel a transfert de charges bidirectionnel a grilles dissymetriques |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN2014DN08844A true IN2014DN08844A (https=) | 2015-05-22 |
Family
ID=46754595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN8844DEN2014 IN2014DN08844A (https=) | 2012-05-03 | 2014-10-21 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US9093353B2 (https=) |
| EP (1) | EP2845231B1 (https=) |
| JP (1) | JP6133973B2 (https=) |
| KR (1) | KR102105730B1 (https=) |
| CN (1) | CN104303306B (https=) |
| FR (1) | FR2990299B1 (https=) |
| IL (1) | IL235437B (https=) |
| IN (1) | IN2014DN08844A (https=) |
| WO (1) | WO2013164169A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2999387B2 (ja) | 1995-02-22 | 2000-01-17 | 日本鋼管株式会社 | チタン合金製ゴルフクラブヘッドおよびその製造方法 |
| DE112016006634T5 (de) * | 2016-03-23 | 2018-12-06 | Psemi Corporation | Anliegender bodykontakt für soi-transistor |
| KR20240042465A (ko) * | 2021-08-12 | 2024-04-02 | 레니쇼우 피엘씨 | 위치 인코더 장치 |
| CN119008646B (zh) * | 2024-10-24 | 2025-01-24 | 合肥晶合集成电路股份有限公司 | 背照式图像传感器及其制备方法、电子设备 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3474638B2 (ja) * | 1994-06-30 | 2003-12-08 | 株式会社東芝 | 固体撮像装置 |
| US6906749B1 (en) | 1998-09-16 | 2005-06-14 | Dalsa, Inc. | CMOS TDI image sensor |
| US6465820B1 (en) * | 1998-09-16 | 2002-10-15 | Dalsa, Inc. | CMOS compatible single phase CCD charge transfer device |
| US6633058B1 (en) * | 1999-07-26 | 2003-10-14 | Dalsa, Inc. | Variable reticulation time delay and integrate sensor |
| JP2003511920A (ja) | 1999-10-05 | 2003-03-25 | カリフォルニア インスティテュート オブ テクノロジー | 能動画素センサによる時間遅延積分画像形成 |
| US20020097330A1 (en) * | 2001-01-25 | 2002-07-25 | Spears Kurt E. | Photosensor array using segmented charge transfer gates to improve processing time for small images |
| US8446508B2 (en) * | 2005-07-27 | 2013-05-21 | Sony Corporation | Solid state imaging device with optimized locations of internal electrical components |
| FR2906080B1 (fr) | 2006-09-19 | 2008-11-28 | E2V Semiconductors Soc Par Act | Capteur d'image en defilement par integrations successives et sommation, a pixels cmos actifs |
| US7923763B2 (en) | 2007-03-08 | 2011-04-12 | Teledyne Licensing, Llc | Two-dimensional time delay integration visible CMOS image sensor |
| JP2009033286A (ja) * | 2007-07-25 | 2009-02-12 | Advanced Mask Inspection Technology Kk | 蓄積型センサの駆動方法および蓄積型センサ |
| FR2924532B1 (fr) * | 2007-11-30 | 2009-12-18 | E2V Semiconductors | Capteur d'image a pixel a quatre ou cinq transistors avec reduction de bruit de reinitialisation |
| JP5300577B2 (ja) * | 2009-04-23 | 2013-09-25 | 三菱電機株式会社 | Ｔｄｉ方式のイメージセンサ、及び該イメージセンサの駆動方法 |
| KR101621278B1 (ko) * | 2009-07-27 | 2016-05-17 | 삼성전자주식회사 | 광 감지 장치 및 그 단위 픽셀 |
| JP5568934B2 (ja) * | 2009-09-29 | 2014-08-13 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、電子機器、レンズアレイ |
| FR2953642B1 (fr) * | 2009-12-09 | 2012-07-13 | E2V Semiconductors | Capteur d'image multilineaire a integration de charges. |
| JP5509846B2 (ja) * | 2009-12-28 | 2014-06-04 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
| FR2959902B1 (fr) * | 2010-05-04 | 2013-08-23 | E2V Semiconductors | Capteur d'image lineaire a defilement et sommation analogique et numerique et procede correspondant |
| FR2960341B1 (fr) | 2010-05-18 | 2012-05-11 | E2V Semiconductors | Capteur d'image matriciel a transfert de charges a grille dissymetrique. |
| FR2961347B1 (fr) * | 2010-06-15 | 2012-08-24 | E2V Semiconductors | Capteur d'image a multiplication d'electrons |
| FR2973162B1 (fr) * | 2011-03-23 | 2013-11-22 | E2V Semiconductors | Capteur d'image a tres haute dynamique |
-
2012
- 2012-05-03 FR FR1254070A patent/FR2990299B1/fr not_active Expired - Fee Related
-
2013
- 2013-04-11 KR KR1020147029985A patent/KR102105730B1/ko not_active Expired - Fee Related
- 2013-04-11 US US14/397,725 patent/US9093353B2/en not_active Expired - Fee Related
- 2013-04-11 CN CN201380023055.8A patent/CN104303306B/zh not_active Expired - Fee Related
- 2013-04-11 JP JP2015509353A patent/JP6133973B2/ja not_active Expired - Fee Related
- 2013-04-11 EP EP13714967.0A patent/EP2845231B1/fr not_active Not-in-force
- 2013-04-11 WO PCT/EP2013/057546 patent/WO2013164169A1/fr not_active Ceased
-
2014
- 2014-10-21 IN IN8844DEN2014 patent/IN2014DN08844A/en unknown
- 2014-11-02 IL IL235437A patent/IL235437B/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| FR2990299B1 (fr) | 2014-05-09 |
| CN104303306A (zh) | 2015-01-21 |
| JP6133973B2 (ja) | 2017-05-24 |
| EP2845231B1 (fr) | 2016-04-06 |
| KR20150017698A (ko) | 2015-02-17 |
| JP2015524159A (ja) | 2015-08-20 |
| FR2990299A1 (fr) | 2013-11-08 |
| CN104303306B (zh) | 2017-04-12 |
| US20150123174A1 (en) | 2015-05-07 |
| US9093353B2 (en) | 2015-07-28 |
| KR102105730B1 (ko) | 2020-04-28 |
| IL235437B (en) | 2019-05-30 |
| IL235437A0 (en) | 2014-12-31 |
| WO2013164169A1 (fr) | 2013-11-07 |
| EP2845231A1 (fr) | 2015-03-11 |