KR102095823B1 - 도전성 입자, 도전 재료 및 접속 구조체 - Google Patents

도전성 입자, 도전 재료 및 접속 구조체 Download PDF

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KR102095823B1
KR102095823B1 KR1020147033188A KR20147033188A KR102095823B1 KR 102095823 B1 KR102095823 B1 KR 102095823B1 KR 1020147033188 A KR1020147033188 A KR 1020147033188A KR 20147033188 A KR20147033188 A KR 20147033188A KR 102095823 B1 KR102095823 B1 KR 102095823B1
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conductive
particles
conductive layer
layer
particle
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KR1020147033188A
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Korean (ko)
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KR20150063962A (ko
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게이조 니시오까
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세키스이가가쿠 고교가부시키가이샤
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    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/18—Non-metallic particles coated with metal
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    • H01L2224/29463—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
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    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/32227—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83009—Pre-treatment of the layer connector or the bonding area
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83009—Pre-treatment of the layer connector or the bonding area
    • H01L2224/83022—Cleaning the bonding area, e.g. oxide removal step, desmearing
    • H—ELECTRICITY
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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    • H01L2924/365—Metallurgical effects
    • H—ELECTRICITY
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    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • H—ELECTRICITY
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    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/03—Contact members characterised by the material, e.g. plating, or coating materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0221—Insulating particles having an electrically conductive coating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/36—Assembling printed circuits with other printed circuits
    • H05K3/361—Assembling flexible printed circuits with other printed circuits

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Families Citing this family (7)

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WO2016063941A1 (ja) * 2014-10-22 2016-04-28 積水化学工業株式会社 導電性粒子、導電材料及び接続構造体
JP6363002B2 (ja) * 2014-11-12 2018-07-25 株式会社日本触媒 導電性微粒子
JP2017059471A (ja) 2015-09-18 2017-03-23 デクセリアルズ株式会社 接続材料
CN107615403B (zh) * 2015-09-24 2021-12-24 积水化学工业株式会社 导电性粒子、导电材料及连接结构体
CN107851482B (zh) * 2016-02-08 2020-03-20 积水化学工业株式会社 导电性粒子、导电材料及连接结构体
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007324138A (ja) 2004-01-30 2007-12-13 Sekisui Chem Co Ltd 導電性微粒子及び異方性導電材料
JP2009259801A (ja) 2008-03-19 2009-11-05 Sekisui Chem Co Ltd 導電性微粒子、及び、導電接続構造体
JP2010027569A (ja) 2008-07-24 2010-02-04 Sony Chemical & Information Device Corp 導電性粒子、異方性導電フィルム、及び接合体、並びに、接続方法
WO2012115076A1 (ja) 2011-02-23 2012-08-30 積水化学工業株式会社 導電性粒子、導電性粒子の製造方法、異方性導電材料及び接続構造体

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100732017B1 (ko) * 2003-06-25 2007-06-25 히다치 가세고교 가부시끼가이샤 회로접속재료, 이것을 이용한 필름상 회로접속재료,회로부재의 접속구조 및 그 제조방법
TWI276117B (en) * 2003-07-04 2007-03-11 Natoco Co Ltd Coated conductive particle, conductive material, anisotropic conductive adhesive and anisotropic conductive junction structure
KR101131229B1 (ko) * 2004-01-30 2012-03-28 세키스이가가쿠 고교가부시키가이샤 도전성 미립자 및 이방성 도전 재료
JP4563110B2 (ja) * 2004-08-20 2010-10-13 積水化学工業株式会社 導電性微粒子の製造方法
KR100651177B1 (ko) * 2004-12-10 2006-11-29 제일모직주식회사 돌기형 도전성 미립자 및 이를 포함하는 이방 도전성 필름
KR20070100967A (ko) * 2005-02-09 2007-10-15 세키스이가가쿠 고교가부시키가이샤 도전성 미립자, 이방성 도전 재료 및 도전 접속 방법
JP4860163B2 (ja) 2005-02-15 2012-01-25 積水化学工業株式会社 導電性微粒子の製造方法
KR20100119830A (ko) * 2007-05-15 2010-11-10 히다치 가세고교 가부시끼가이샤 회로 접속 재료 및 회로 부재의 접속 구조
WO2009057612A1 (ja) * 2007-10-31 2009-05-07 Hitachi Chemical Company, Ltd. 回路接続材料及び回路部材の接続構造
JP5151920B2 (ja) * 2008-02-05 2013-02-27 日立化成工業株式会社 導電粒子及び導電粒子の製造方法
WO2010001900A1 (ja) * 2008-07-01 2010-01-07 日立化成工業株式会社 回路接続材料及び回路接続構造体
JP4640531B2 (ja) * 2009-07-02 2011-03-02 日立化成工業株式会社 導電粒子
WO2011030715A1 (ja) * 2009-09-08 2011-03-17 積水化学工業株式会社 絶縁粒子付き導電性粒子、絶縁粒子付き導電性粒子の製造方法、異方性導電材料及び接続構造体
JP5589361B2 (ja) 2009-11-16 2014-09-17 日立化成株式会社 導電粒子及びその製造方法
WO2011115105A1 (ja) * 2010-03-17 2011-09-22 積水化学工業株式会社 導電性粒子、導電性粒子の製造方法、異方性導電材料及び接続構造体
JP6079425B2 (ja) * 2012-05-16 2017-02-15 日立化成株式会社 導電粒子、異方性導電接着剤フィルム及び接続構造体

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007324138A (ja) 2004-01-30 2007-12-13 Sekisui Chem Co Ltd 導電性微粒子及び異方性導電材料
JP2009259801A (ja) 2008-03-19 2009-11-05 Sekisui Chem Co Ltd 導電性微粒子、及び、導電接続構造体
JP2010027569A (ja) 2008-07-24 2010-02-04 Sony Chemical & Information Device Corp 導電性粒子、異方性導電フィルム、及び接合体、並びに、接続方法
WO2012115076A1 (ja) 2011-02-23 2012-08-30 積水化学工業株式会社 導電性粒子、導電性粒子の製造方法、異方性導電材料及び接続構造体

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