KR102091987B1 - 웨이퍼 조사 툴들을 위한 다이오드 레이저 기반 광대역 광원들 - Google Patents

웨이퍼 조사 툴들을 위한 다이오드 레이저 기반 광대역 광원들 Download PDF

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KR102091987B1
KR102091987B1 KR1020197007979A KR20197007979A KR102091987B1 KR 102091987 B1 KR102091987 B1 KR 102091987B1 KR 1020197007979 A KR1020197007979 A KR 1020197007979A KR 20197007979 A KR20197007979 A KR 20197007979A KR 102091987 B1 KR102091987 B1 KR 102091987B1
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stacks
incident beam
laser diode
irradiation
diode arrays
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KR20190032643A (ko
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아난트 치말기
요우너스 보라
루돌프 브루너
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8845—Multiple wavelengths of illumination or detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G01N2201/06113—Coherent sources; lasers
    • G01N2201/0612—Laser diodes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020197007979A 2012-06-26 2013-06-26 웨이퍼 조사 툴들을 위한 다이오드 레이저 기반 광대역 광원들 Active KR102091987B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261664493P 2012-06-26 2012-06-26
US61/664,493 2012-06-26
US13/924,216 US8896827B2 (en) 2012-06-26 2013-06-21 Diode laser based broad band light sources for wafer inspection tools
US13/924,216 2013-06-21
PCT/US2013/047901 WO2014004679A1 (en) 2012-06-26 2013-06-26 Diode laser based broad band light sources for wafer inspection tools

Related Parent Applications (1)

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KR1020157001970A Division KR101961900B1 (ko) 2012-06-26 2013-06-26 웨이퍼 조사 툴들을 위한 다이오드 레이저 기반 광대역 광원들

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KR20190032643A KR20190032643A (ko) 2019-03-27
KR102091987B1 true KR102091987B1 (ko) 2020-03-20

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KR1020157001970A Active KR101961900B1 (ko) 2012-06-26 2013-06-26 웨이퍼 조사 툴들을 위한 다이오드 레이저 기반 광대역 광원들

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US (2) US8896827B2 (enExample)
JP (3) JP6282643B2 (enExample)
KR (2) KR102091987B1 (enExample)
IL (2) IL236401B (enExample)
WO (1) WO2014004679A1 (enExample)

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US9709510B2 (en) * 2014-06-26 2017-07-18 Kla-Tencor Corp. Determining a configuration for an optical element positioned in a collection aperture during wafer inspection
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US10180248B2 (en) 2015-09-02 2019-01-15 ProPhotonix Limited LED lamp with sensing capabilities
US10257918B2 (en) * 2015-09-28 2019-04-09 Kla-Tencor Corporation System and method for laser-sustained plasma illumination
EP3276389A1 (en) * 2016-07-27 2018-01-31 Fundació Institut de Ciències Fotòniques A common-path interferometric scattering imaging system and a method of using common-path interferometric scattering imaging to detect an object
CN106568396A (zh) * 2016-10-26 2017-04-19 深圳奥比中光科技有限公司 一种激光投影仪及其深度相机
CN106501959A (zh) * 2016-10-26 2017-03-15 深圳奥比中光科技有限公司 一种面阵激光投影仪及其深度相机
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CN109211803B (zh) * 2018-09-17 2020-10-09 中国科学院生态环境研究中心 一种基于显微多光谱技术对微塑料进行快速识别的装置
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US8896827B2 (en) 2014-11-25
JP6282643B2 (ja) 2018-02-21
IL236401B (en) 2018-08-30
US9110037B2 (en) 2015-08-18
WO2014004679A1 (en) 2014-01-03
KR20150021586A (ko) 2015-03-02
JP6932174B2 (ja) 2021-09-08
IL246806B (en) 2019-08-29
IL236401A0 (en) 2015-02-26
US20130342825A1 (en) 2013-12-26
IL246806A0 (en) 2016-08-31
US20150042979A1 (en) 2015-02-12
JP2015524556A (ja) 2015-08-24
KR20190032643A (ko) 2019-03-27
JP2020064063A (ja) 2020-04-23
JP2018119963A (ja) 2018-08-02
KR101961900B1 (ko) 2019-03-26

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