IL236401B - Broadband light sources based on diode lasers for part inspection tools - Google Patents
Broadband light sources based on diode lasers for part inspection toolsInfo
- Publication number
- IL236401B IL236401B IL236401A IL23640114A IL236401B IL 236401 B IL236401 B IL 236401B IL 236401 A IL236401 A IL 236401A IL 23640114 A IL23640114 A IL 23640114A IL 236401 B IL236401 B IL 236401B
- Authority
- IL
- Israel
- Prior art keywords
- light sources
- diode laser
- incident beam
- band light
- broad band
- Prior art date
Links
- 238000007689 inspection Methods 0.000 title abstract 2
- 238000003491 array Methods 0.000 abstract 3
- 230000007547 defect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8845—Multiple wavelengths of illumination or detection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N2021/95676—Masks, reticles, shadow masks
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/061—Sources
- G01N2201/06113—Coherent sources; lasers
- G01N2201/0612—Laser diodes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261664493P | 2012-06-26 | 2012-06-26 | |
| US13/924,216 US8896827B2 (en) | 2012-06-26 | 2013-06-21 | Diode laser based broad band light sources for wafer inspection tools |
| PCT/US2013/047901 WO2014004679A1 (en) | 2012-06-26 | 2013-06-26 | Diode laser based broad band light sources for wafer inspection tools |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL236401A0 IL236401A0 (en) | 2015-02-26 |
| IL236401B true IL236401B (en) | 2018-08-30 |
Family
ID=49774195
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL236401A IL236401B (en) | 2012-06-26 | 2014-12-23 | Broadband light sources based on diode lasers for part inspection tools |
| IL246806A IL246806B (en) | 2012-06-26 | 2016-07-17 | Broadband light sources based on diode lasers for part inspection tools |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL246806A IL246806B (en) | 2012-06-26 | 2016-07-17 | Broadband light sources based on diode lasers for part inspection tools |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8896827B2 (enExample) |
| JP (3) | JP6282643B2 (enExample) |
| KR (2) | KR102091987B1 (enExample) |
| IL (2) | IL236401B (enExample) |
| WO (1) | WO2014004679A1 (enExample) |
Families Citing this family (23)
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| US8896827B2 (en) | 2012-06-26 | 2014-11-25 | Kla-Tencor Corporation | Diode laser based broad band light sources for wafer inspection tools |
| US9128387B2 (en) * | 2013-05-14 | 2015-09-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Ultraviolet light emitting diode array light source for photolithography and method |
| US9581554B2 (en) * | 2013-05-30 | 2017-02-28 | Seagate Technology Llc | Photon emitter array |
| US9558858B2 (en) * | 2013-08-14 | 2017-01-31 | Kla-Tencor Corporation | System and method for imaging a sample with a laser sustained plasma illumination output |
| US9709510B2 (en) * | 2014-06-26 | 2017-07-18 | Kla-Tencor Corp. | Determining a configuration for an optical element positioned in a collection aperture during wafer inspection |
| US9599573B2 (en) | 2014-12-02 | 2017-03-21 | Kla-Tencor Corporation | Inspection systems and techniques with enhanced detection |
| US10180248B2 (en) | 2015-09-02 | 2019-01-15 | ProPhotonix Limited | LED lamp with sensing capabilities |
| US10257918B2 (en) * | 2015-09-28 | 2019-04-09 | Kla-Tencor Corporation | System and method for laser-sustained plasma illumination |
| EP3276389A1 (en) * | 2016-07-27 | 2018-01-31 | Fundació Institut de Ciències Fotòniques | A common-path interferometric scattering imaging system and a method of using common-path interferometric scattering imaging to detect an object |
| CN106568396A (zh) * | 2016-10-26 | 2017-04-19 | 深圳奥比中光科技有限公司 | 一种激光投影仪及其深度相机 |
| CN106501959A (zh) * | 2016-10-26 | 2017-03-15 | 深圳奥比中光科技有限公司 | 一种面阵激光投影仪及其深度相机 |
| DE102017108873A1 (de) * | 2017-04-26 | 2018-10-31 | Carl Zeiss Microscopy Gmbh | Phasenkontrast-Bildgebung mit Übertragungsfunktion |
| CN108646167B (zh) * | 2018-04-27 | 2020-12-04 | 中科晶源微电子技术（北京）有限公司 | 用于半导体器件的激光辅助的电子束检测设备和方法 |
| CN109211803B (zh) * | 2018-09-17 | 2020-10-09 | 中国科学院生态环境研究中心 | 一种基于显微多光谱技术对微塑料进行快速识别的装置 |
| US11262591B2 (en) * | 2018-11-09 | 2022-03-01 | Kla Corporation | System and method for pumping laser sustained plasma with an illumination source having modified pupil power distribution |
| WO2020132960A1 (zh) * | 2018-12-26 | 2020-07-02 | 合刃科技（深圳）有限公司 | 缺陷检测方法及缺陷检测系统 |
| US11156846B2 (en) * | 2019-04-19 | 2021-10-26 | Kla Corporation | High-brightness illumination source for optical metrology |
| KR102170357B1 (ko) * | 2019-05-29 | 2020-10-27 | 재단법인대구경북과학기술원 | 비파괴 결함 검출방법 |
| KR20220030067A (ko) | 2020-09-02 | 2022-03-10 | 삼성전자주식회사 | 웨이퍼 검사 장치 및 이를 포함하는 시스템 |
| JP2023139436A (ja) | 2022-03-22 | 2023-10-04 | 株式会社Ｓｃｒｅｅｎホールディングス | フォトマスク検査装置 |
| US20240069167A1 (en) * | 2022-08-23 | 2024-02-29 | Liturex (Guangzhou) Co. Ltd | Mirrorless solid state lidar |
| US20250072791A1 (en) * | 2023-08-30 | 2025-03-06 | GS-HealthMatrix, LLC | Multi-device health parameter monitoring systems, methods, and devices |
| US20250180484A1 (en) * | 2023-12-05 | 2025-06-05 | Orbotech Ltd. | Apparatus and method for fluorescence detection in electronic devices with high brightness coaxial diode laser illumination |
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-
2013
- 2013-06-21 US US13/924,216 patent/US8896827B2/en active Active
- 2013-06-26 JP JP2015520466A patent/JP6282643B2/ja active Active
- 2013-06-26 KR KR1020197007979A patent/KR102091987B1/ko active Active
- 2013-06-26 WO PCT/US2013/047901 patent/WO2014004679A1/en not_active Ceased
- 2013-06-26 KR KR1020157001970A patent/KR101961900B1/ko active Active
-
2014
- 2014-10-23 US US14/521,977 patent/US9110037B2/en active Active
- 2014-12-23 IL IL236401A patent/IL236401B/en active IP Right Grant
-
2016
- 2016-07-17 IL IL246806A patent/IL246806B/en active IP Right Grant
-
2018
- 2018-01-24 JP JP2018009830A patent/JP2018119963A/ja active Pending
-
2019
- 2019-11-28 JP JP2019215516A patent/JP6932174B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US8896827B2 (en) | 2014-11-25 |
| JP6282643B2 (ja) | 2018-02-21 |
| US9110037B2 (en) | 2015-08-18 |
| WO2014004679A1 (en) | 2014-01-03 |
| KR20150021586A (ko) | 2015-03-02 |
| JP6932174B2 (ja) | 2021-09-08 |
| IL246806B (en) | 2019-08-29 |
| IL236401A0 (en) | 2015-02-26 |
| US20130342825A1 (en) | 2013-12-26 |
| IL246806A0 (en) | 2016-08-31 |
| US20150042979A1 (en) | 2015-02-12 |
| JP2015524556A (ja) | 2015-08-24 |
| KR20190032643A (ko) | 2019-03-27 |
| KR102091987B1 (ko) | 2020-03-20 |
| JP2020064063A (ja) | 2020-04-23 |
| JP2018119963A (ja) | 2018-08-02 |
| KR101961900B1 (ko) | 2019-03-26 |
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| FF | Patent granted | ||
| KB | Patent renewed | ||
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