JP6282643B2 - ウェハ検査ツールのためのダイオードレーザーベースの広帯域光源 - Google Patents

ウェハ検査ツールのためのダイオードレーザーベースの広帯域光源 Download PDF

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Publication number
JP6282643B2
JP6282643B2 JP2015520466A JP2015520466A JP6282643B2 JP 6282643 B2 JP6282643 B2 JP 6282643B2 JP 2015520466 A JP2015520466 A JP 2015520466A JP 2015520466 A JP2015520466 A JP 2015520466A JP 6282643 B2 JP6282643 B2 JP 6282643B2
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Prior art keywords
laser diode
incident beam
stacks
stack
light
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Japanese (ja)
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JP2015524556A (ja
JP2015524556A5 (enExample
Inventor
アナント チムマルギ
アナント チムマルギ
ユヌス ボラ
ユヌス ボラ
ルドルフ ブランナー
ルドルフ ブランナー
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8845—Multiple wavelengths of illumination or detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G01N2201/06113—Coherent sources; lasers
    • G01N2201/0612—Laser diodes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2015520466A 2012-06-26 2013-06-26 ウェハ検査ツールのためのダイオードレーザーベースの広帯域光源 Active JP6282643B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261664493P 2012-06-26 2012-06-26
US61/664,493 2012-06-26
US13/924,216 US8896827B2 (en) 2012-06-26 2013-06-21 Diode laser based broad band light sources for wafer inspection tools
US13/924,216 2013-06-21
PCT/US2013/047901 WO2014004679A1 (en) 2012-06-26 2013-06-26 Diode laser based broad band light sources for wafer inspection tools

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018009830A Division JP2018119963A (ja) 2012-06-26 2018-01-24 ウェハ検査ツールのためのダイオードレーザーベースの広帯域光源

Publications (3)

Publication Number Publication Date
JP2015524556A JP2015524556A (ja) 2015-08-24
JP2015524556A5 JP2015524556A5 (enExample) 2016-08-12
JP6282643B2 true JP6282643B2 (ja) 2018-02-21

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JP2015520466A Active JP6282643B2 (ja) 2012-06-26 2013-06-26 ウェハ検査ツールのためのダイオードレーザーベースの広帯域光源
JP2018009830A Pending JP2018119963A (ja) 2012-06-26 2018-01-24 ウェハ検査ツールのためのダイオードレーザーベースの広帯域光源
JP2019215516A Active JP6932174B2 (ja) 2012-06-26 2019-11-28 半導体デバイスの検査または計測を実行するための光学装置及び方法

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JP2018009830A Pending JP2018119963A (ja) 2012-06-26 2018-01-24 ウェハ検査ツールのためのダイオードレーザーベースの広帯域光源
JP2019215516A Active JP6932174B2 (ja) 2012-06-26 2019-11-28 半導体デバイスの検査または計測を実行するための光学装置及び方法

Country Status (5)

Country Link
US (2) US8896827B2 (enExample)
JP (3) JP6282643B2 (enExample)
KR (2) KR102091987B1 (enExample)
IL (2) IL236401B (enExample)
WO (1) WO2014004679A1 (enExample)

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Also Published As

Publication number Publication date
US8896827B2 (en) 2014-11-25
IL236401B (en) 2018-08-30
US9110037B2 (en) 2015-08-18
WO2014004679A1 (en) 2014-01-03
KR20150021586A (ko) 2015-03-02
JP6932174B2 (ja) 2021-09-08
IL246806B (en) 2019-08-29
IL236401A0 (en) 2015-02-26
US20130342825A1 (en) 2013-12-26
IL246806A0 (en) 2016-08-31
US20150042979A1 (en) 2015-02-12
JP2015524556A (ja) 2015-08-24
KR20190032643A (ko) 2019-03-27
KR102091987B1 (ko) 2020-03-20
JP2020064063A (ja) 2020-04-23
JP2018119963A (ja) 2018-08-02
KR101961900B1 (ko) 2019-03-26

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