KR102086409B1 - 검출 장치, 리소그래피 장치, 물품의 제조 방법, 및 검출 방법 - Google Patents

검출 장치, 리소그래피 장치, 물품의 제조 방법, 및 검출 방법 Download PDF

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KR102086409B1
KR102086409B1 KR1020160083252A KR20160083252A KR102086409B1 KR 102086409 B1 KR102086409 B1 KR 102086409B1 KR 1020160083252 A KR1020160083252 A KR 1020160083252A KR 20160083252 A KR20160083252 A KR 20160083252A KR 102086409 B1 KR102086409 B1 KR 102086409B1
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imaging
mark
substrate
image
processing unit
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KR20170004889A (ko
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타쿠로 츠지카와
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캐논 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H01L22/12—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • H01L21/0274—
    • H01L21/67259—
    • H01L22/30—
    • H01L23/544—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N2021/1765—Method using an image detector and processing of image signal
    • G01N2021/177—Detector of the video camera type
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30204—Marker

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Multimedia (AREA)
  • Public Health (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Quality & Reliability (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Manufacturing & Machinery (AREA)
KR1020160083252A 2015-07-02 2016-07-01 검출 장치, 리소그래피 장치, 물품의 제조 방법, 및 검출 방법 Active KR102086409B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2015-133920 2015-07-02
JP2015133920A JP6584170B2 (ja) 2015-07-02 2015-07-02 検出装置、リソグラフィ装置、物品の製造方法、および検出方法

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KR20170004889A KR20170004889A (ko) 2017-01-11
KR102086409B1 true KR102086409B1 (ko) 2020-03-09

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US (1) US10095124B2 (enExample)
JP (1) JP6584170B2 (enExample)
KR (1) KR102086409B1 (enExample)

Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
JP6955344B2 (ja) * 2017-02-20 2021-10-27 キヤノン株式会社 インプリント装置、および物品製造方法
DE102018124015B4 (de) * 2018-09-28 2021-07-29 Basler Ag System und Verfahren zur Erfassung von Bildern
KR102863335B1 (ko) * 2019-11-05 2025-09-25 삼성디스플레이 주식회사 표시 장치의 검사 방법 및 검사 장치
JP2022117091A (ja) * 2021-01-29 2022-08-10 キヤノン株式会社 計測装置、リソグラフィ装置及び物品の製造方法

Citations (3)

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JP2003092247A (ja) * 2001-09-17 2003-03-28 Canon Inc 位置検出装置及び方法並びに露光装置、デバイスの製造方法
US20090296058A1 (en) * 2008-06-02 2009-12-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20130148091A1 (en) * 2011-12-13 2013-06-13 Canon Kabushiki Kaisha Lithography apparatus and method, and method of manufacturing article

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JP2734004B2 (ja) * 1988-09-30 1998-03-30 キヤノン株式会社 位置合わせ装置
JPH11211415A (ja) * 1998-01-29 1999-08-06 Canon Inc 位置検出装置及びそれを用いたデバイスの製造方法
JP2003092246A (ja) * 2001-09-17 2003-03-28 Canon Inc アライメントマーク及びアライメント装置とその方法、及び露光装置、デバイスの製造方法
JP2003092248A (ja) * 2001-09-17 2003-03-28 Canon Inc 位置検出装置、位置決め装置及びそれらの方法並びに露光装置及びデバイスの製造方法
JP2003203839A (ja) * 2002-01-04 2003-07-18 Canon Inc 信号波形補正方法及び被観察面撮像方法並びにそれを用いる露光装置
JP2004006527A (ja) * 2002-05-31 2004-01-08 Canon Inc 位置検出装置及び位置検出方法、露光装置、デバイス製造方法並びに基板
JP4102201B2 (ja) 2003-01-09 2008-06-18 オリンパス株式会社 測光装置、電子カメラ
JP2004296921A (ja) * 2003-03-27 2004-10-21 Canon Inc 位置検出装置
EP1755152B1 (en) * 2004-04-23 2016-02-24 Nikon Corporation Measuring method, measuring equipment, exposing method and exposing equipment
JP4307482B2 (ja) * 2006-12-19 2009-08-05 キヤノン株式会社 位置計測装置、露光装置、およびデバイス製造方法
JP2009300798A (ja) * 2008-06-13 2009-12-24 Canon Inc 露光装置およびデバイス製造方法
JP5550253B2 (ja) * 2009-04-22 2014-07-16 キヤノン株式会社 マーク位置検出装置及びマーク位置検出方法、それを用いた露光装置及びデバイスの製造方法
JP6213912B2 (ja) * 2013-05-02 2017-10-18 株式会社タムロン 小型高変倍ズームレンズ

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US20090296058A1 (en) * 2008-06-02 2009-12-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20130148091A1 (en) * 2011-12-13 2013-06-13 Canon Kabushiki Kaisha Lithography apparatus and method, and method of manufacturing article

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KR20170004889A (ko) 2017-01-11
JP2017015994A (ja) 2017-01-19
US20170005017A1 (en) 2017-01-05
JP6584170B2 (ja) 2019-10-02
US10095124B2 (en) 2018-10-09

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