KR102082009B1 - 아연 금속과 아연 과산화물의 반응성 결합으로 형성된 층상 결합 구조물 - Google Patents

아연 금속과 아연 과산화물의 반응성 결합으로 형성된 층상 결합 구조물 Download PDF

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KR102082009B1
KR102082009B1 KR1020130022804A KR20130022804A KR102082009B1 KR 102082009 B1 KR102082009 B1 KR 102082009B1 KR 1020130022804 A KR1020130022804 A KR 1020130022804A KR 20130022804 A KR20130022804 A KR 20130022804A KR 102082009 B1 KR102082009 B1 KR 102082009B1
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South Korea
Prior art keywords
zinc
structures
layer
zinc oxide
layered
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KR1020130022804A
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Korean (ko)
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KR20130127361A (ko
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로빈 엘. 우
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더 보잉 컴파니
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31536—Including interfacial reaction product of adjacent layers

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Laminated Bodies (AREA)
  • Photovoltaic Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Adhesives Or Adhesive Processes (AREA)
KR1020130022804A 2012-05-14 2013-03-04 아연 금속과 아연 과산화물의 반응성 결합으로 형성된 층상 결합 구조물 Expired - Fee Related KR102082009B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/471,306 US9105561B2 (en) 2012-05-14 2012-05-14 Layered bonded structures formed from reactive bonding of zinc metal and zinc peroxide
US13/471,306 2012-05-14

Publications (2)

Publication Number Publication Date
KR20130127361A KR20130127361A (ko) 2013-11-22
KR102082009B1 true KR102082009B1 (ko) 2020-02-26

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KR1020130022804A Expired - Fee Related KR102082009B1 (ko) 2012-05-14 2013-03-04 아연 금속과 아연 과산화물의 반응성 결합으로 형성된 층상 결합 구조물

Country Status (5)

Country Link
US (2) US9105561B2 (https=)
EP (1) EP2665088B1 (https=)
JP (2) JP6351211B2 (https=)
KR (1) KR102082009B1 (https=)
CN (1) CN103426725B (https=)

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* Cited by examiner, † Cited by third party
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DE102015111040A1 (de) * 2015-07-08 2017-01-12 Osram Opto Semiconductors Gmbh Verfahren zum Verbinden von zumindest zwei Komponenten
JP7371871B2 (ja) * 2019-01-07 2023-10-31 ソニーグループ株式会社 構造体および構造体の製造方法ならびに電子機器
CN110739285A (zh) * 2019-10-30 2020-01-31 北京工业大学 硅基金属中间层化合物半导体晶圆的结构及制备方法
FR3117666B1 (fr) * 2020-12-15 2022-10-28 Commissariat Energie Atomique Procede de fabrication d’une structure semi-conductrice comprenant une zone d’interface incluant des agglomerats

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Also Published As

Publication number Publication date
US9978893B2 (en) 2018-05-22
US9105561B2 (en) 2015-08-11
JP2013243360A (ja) 2013-12-05
US20130302622A1 (en) 2013-11-14
JP2018093222A (ja) 2018-06-14
EP2665088B1 (en) 2021-06-02
US20150303316A1 (en) 2015-10-22
KR20130127361A (ko) 2013-11-22
CN103426725A (zh) 2013-12-04
EP2665088A3 (en) 2014-06-04
JP6351211B2 (ja) 2018-07-04
EP2665088A2 (en) 2013-11-20
CN103426725B (zh) 2017-10-27

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