KR102060671B1 - 플라즈마를 이용한 객체 처리 장치 - Google Patents

플라즈마를 이용한 객체 처리 장치 Download PDF

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KR102060671B1
KR102060671B1 KR1020157004383A KR20157004383A KR102060671B1 KR 102060671 B1 KR102060671 B1 KR 102060671B1 KR 1020157004383 A KR1020157004383 A KR 1020157004383A KR 20157004383 A KR20157004383 A KR 20157004383A KR 102060671 B1 KR102060671 B1 KR 102060671B1
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South Korea
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plasma
subassembly
subassemblies
gas
processing
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KR20150038172A (ko
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질 보종
엠마뉴엘 기도띠
야닉 삐우
빠트릭 라빈존
줄리앙 리샤르
마크 세제르
뱅썽 지롤트
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나노플라
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020157004383A 2012-07-20 2013-07-22 플라즈마를 이용한 객체 처리 장치 Active KR102060671B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1257037 2012-07-20
FR1257037A FR2993576B1 (fr) 2012-07-20 2012-07-20 Dispositif de traitement d'un objet par plasma
PCT/FR2013/051768 WO2014013209A1 (fr) 2012-07-20 2013-07-22 Dispositif de traitement d'un objet par plasma

Publications (2)

Publication Number Publication Date
KR20150038172A KR20150038172A (ko) 2015-04-08
KR102060671B1 true KR102060671B1 (ko) 2019-12-30

Family

ID=47227933

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157004383A Active KR102060671B1 (ko) 2012-07-20 2013-07-22 플라즈마를 이용한 객체 처리 장치

Country Status (9)

Country Link
US (2) US20150243485A1 (https=)
EP (1) EP2875517B1 (https=)
JP (1) JP6298814B2 (https=)
KR (1) KR102060671B1 (https=)
CN (1) CN104685605B (https=)
FR (1) FR2993576B1 (https=)
SG (1) SG11201500389UA (https=)
TW (1) TWI601181B (https=)
WO (1) WO2014013209A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9378975B2 (en) 2014-02-10 2016-06-28 Tokyo Electron Limited Etching method to form spacers having multiple film layers
WO2018044713A1 (en) * 2016-08-29 2018-03-08 Tokyo Electron Limited Method of quasi-atomic layer etching of silicon nitride
JP6836953B2 (ja) * 2016-12-13 2021-03-03 東京エレクトロン株式会社 窒化シリコンから形成された第１領域を酸化シリコンから形成された第２領域に対して選択的にエッチングする方法
WO2018156985A1 (en) 2017-02-23 2018-08-30 Tokyo Electron Limited Method of anisotropic extraction of silicon nitride mandrel for fabrication of self-aligned block structures
WO2018156975A1 (en) 2017-02-23 2018-08-30 Tokyo Electron Limited Method of quasi-atomic layer etching of silicon nitride
KR102440367B1 (ko) * 2017-06-22 2022-09-05 삼성전자주식회사 Rps를 이용한 식각 방법 및 그 식각 방법을 포함한 반도체 소자 제조방법
US10607852B2 (en) * 2017-09-13 2020-03-31 Tokyo Electron Limited Selective nitride etching method for self-aligned multiple patterning
US10658192B2 (en) * 2017-09-13 2020-05-19 Tokyo Electron Limited Selective oxide etching method for self-aligned multiple patterning
US12599658B2 (en) 2019-06-07 2026-04-14 Oregon Health & Science University Hepatitis B virus-specific T cell responses

Citations (3)

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US20070090092A1 (en) 2003-06-16 2007-04-26 Saint-Gobain Glass France Method and device for removing layers in some areas of glass plates
US20070181421A1 (en) * 2006-02-09 2007-08-09 Industrial Technology Research Institute Sputtering system providing large area sputtering and plasma-assisted reactive gas dissociation
US20100059085A1 (en) * 2006-12-21 2010-03-11 Nederlandse Organisatie Voor Toegepast-Natuurweten Plasma generator and method for cleaning an object

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JP3752468B2 (ja) * 1991-04-04 2006-03-08 株式会社日立製作所 半導体装置の製造方法
JP4654176B2 (ja) * 1996-02-22 2011-03-16 住友精密工業株式会社 誘導結合プラズマ・リアクタ
US6267074B1 (en) * 1997-02-24 2001-07-31 Foi Corporation Plasma treatment systems
JP2002503031A (ja) * 1998-02-09 2002-01-29 アプライド マテリアルズ インコーポレイテッド 種密度を個別制御するプラズマアシスト処理チャンバ
US6051073A (en) * 1998-02-11 2000-04-18 Silicon Genesis Corporation Perforated shield for plasma immersion ion implantation
US20010002584A1 (en) * 1998-12-01 2001-06-07 Wei Liu Enhanced plasma mode and system for plasma immersion ion implantation
US20060124588A1 (en) * 1999-01-05 2006-06-15 Berg & Berg Enterprises, Llc System and method for reducing metal oxides with hydrogen radicals
JP2002100623A (ja) * 2000-09-20 2002-04-05 Fuji Daiichi Seisakusho:Kk 薄膜半導体製造装置
JP2004265627A (ja) * 2003-02-14 2004-09-24 Masato Toshima プラズマ発生装置およびプラズマエッチング装置
US20060276043A1 (en) * 2003-03-21 2006-12-07 Johnson Mark A L Method and systems for single- or multi-period edge definition lithography
US7015415B2 (en) * 2004-02-18 2006-03-21 Dry Plasma Systems, Inc. Higher power density downstream plasma
KR100799175B1 (ko) * 2006-04-21 2008-02-01 주식회사 뉴파워 프라즈마 플라즈마 프로세싱 시스템 및 그 제어 방법
US7976674B2 (en) * 2007-06-13 2011-07-12 Tokyo Electron Limited Embedded multi-inductive large area plasma source
CN201228282Y (zh) * 2007-12-24 2009-04-29 杨思泽 脉冲高能量密度等离子体辅助多源复合材料表面改性装置
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US8574447B2 (en) * 2010-03-31 2013-11-05 Lam Research Corporation Inorganic rapid alternating process for silicon etch
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US20070090092A1 (en) 2003-06-16 2007-04-26 Saint-Gobain Glass France Method and device for removing layers in some areas of glass plates
US20070181421A1 (en) * 2006-02-09 2007-08-09 Industrial Technology Research Institute Sputtering system providing large area sputtering and plasma-assisted reactive gas dissociation
US20100059085A1 (en) * 2006-12-21 2010-03-11 Nederlandse Organisatie Voor Toegepast-Natuurweten Plasma generator and method for cleaning an object

Also Published As

Publication number Publication date
TWI601181B (zh) 2017-10-01
EP2875517B1 (fr) 2020-05-27
TW201415520A (zh) 2014-04-16
CN104685605A (zh) 2015-06-03
CN104685605B (zh) 2017-05-17
US20150243485A1 (en) 2015-08-27
KR20150038172A (ko) 2015-04-08
US11075057B2 (en) 2021-07-27
EP2875517A1 (fr) 2015-05-27
WO2014013209A1 (fr) 2014-01-23
FR2993576B1 (fr) 2018-05-18
JP2015526897A (ja) 2015-09-10
JP6298814B2 (ja) 2018-03-20
SG11201500389UA (en) 2015-03-30
US20180158651A1 (en) 2018-06-07
FR2993576A1 (fr) 2014-01-24

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