KR102046729B1 - 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조방법 - Google Patents

마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조방법 Download PDF

Info

Publication number
KR102046729B1
KR102046729B1 KR1020187001896A KR20187001896A KR102046729B1 KR 102046729 B1 KR102046729 B1 KR 102046729B1 KR 1020187001896 A KR1020187001896 A KR 1020187001896A KR 20187001896 A KR20187001896 A KR 20187001896A KR 102046729 B1 KR102046729 B1 KR 102046729B1
Authority
KR
South Korea
Prior art keywords
film
etching
pattern
mask
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020187001896A
Other languages
English (en)
Korean (ko)
Other versions
KR20180011348A (ko
Inventor
오사무 노자와
료 오꾸보
히로아끼 시시도
야스시 오꾸보
Original Assignee
호야 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20180011348A publication Critical patent/KR20180011348A/ko
Application granted granted Critical
Publication of KR102046729B1 publication Critical patent/KR102046729B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H01L21/0337—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020187001896A 2013-09-24 2014-09-05 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조방법 Active KR102046729B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013196608 2013-09-24
JPJP-P-2013-196608 2013-09-24
PCT/JP2014/073498 WO2015045801A1 (ja) 2013-09-24 2014-09-05 マスクブランク、転写用マスクおよび転写用マスクの製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020167001584A Division KR101823276B1 (ko) 2013-09-24 2014-09-05 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020197033423A Division KR102067372B1 (ko) 2013-09-24 2014-09-05 마스크 블랭크, 전사용 마스크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법

Publications (2)

Publication Number Publication Date
KR20180011348A KR20180011348A (ko) 2018-01-31
KR102046729B1 true KR102046729B1 (ko) 2019-11-19

Family

ID=52742948

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020187001896A Active KR102046729B1 (ko) 2013-09-24 2014-09-05 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조방법
KR1020167001584A Active KR101823276B1 (ko) 2013-09-24 2014-09-05 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
KR1020197033423A Active KR102067372B1 (ko) 2013-09-24 2014-09-05 마스크 블랭크, 전사용 마스크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020167001584A Active KR101823276B1 (ko) 2013-09-24 2014-09-05 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
KR1020197033423A Active KR102067372B1 (ko) 2013-09-24 2014-09-05 마스크 블랭크, 전사용 마스크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법

Country Status (5)

Country Link
US (2) US10101650B2 (enExample)
JP (3) JP5837257B2 (enExample)
KR (3) KR102046729B1 (enExample)
TW (2) TWI597563B (enExample)
WO (1) WO2015045801A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102046729B1 (ko) * 2013-09-24 2019-11-19 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조방법
JP6612326B2 (ja) * 2015-03-19 2019-11-27 Ｈｏｙａ株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
JP6058757B1 (ja) * 2015-07-15 2017-01-11 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
KR101617727B1 (ko) 2015-07-24 2016-05-03 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토마스크
KR102273801B1 (ko) 2017-02-27 2021-07-06 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크의 제조 방법, 및 반도체 디바이스의 제조 방법
JP6642493B2 (ja) 2017-03-10 2020-02-05 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク
JP6808566B2 (ja) 2017-04-08 2021-01-06 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
US11048160B2 (en) * 2017-06-14 2021-06-29 Hoya Corporation Mask blank, phase shift mask and method for manufacturing semiconductor device
SG11202102270QA (en) * 2018-09-27 2021-04-29 Hoya Corp Mask blank, transfer mask, and method of manufacturing semiconductor device
JP7033638B2 (ja) * 2020-12-09 2022-03-10 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
CN118915377B (zh) * 2024-10-11 2025-03-21 合肥晶合集成电路股份有限公司 掩膜版及其形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007241065A (ja) 2006-03-10 2007-09-20 Shin Etsu Chem Co Ltd フォトマスクブランク及びフォトマスク
JP2013083933A (ja) 2011-09-28 2013-05-09 Hoya Corp マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4933753B2 (ja) 2005-07-21 2012-05-16 信越化学工業株式会社 位相シフトマスクブランクおよび位相シフトマスクならびにこれらの製造方法
EP1746460B1 (en) 2005-07-21 2011-04-06 Shin-Etsu Chemical Co., Ltd. Photomask blank, photomask and fabrication method thereof
WO2007034930A1 (ja) * 2005-09-21 2007-03-29 Dai Nippon Printing Co., Ltd. 階調をもつフォトマスクおよびその製造方法
JP4764214B2 (ja) 2006-03-10 2011-08-31 凸版印刷株式会社 ハーフトーン型位相シフトマスク及びその製造方法
JP4737426B2 (ja) * 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
JP5562834B2 (ja) * 2008-03-31 2014-07-30 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスクおよびフォトマスクブランクの製造方法
JP5323526B2 (ja) 2008-04-02 2013-10-23 Ｈｏｙａ株式会社 位相シフトマスクブランク及び位相シフトマスクの製造方法
TWI409580B (zh) 2008-06-27 2013-09-21 S&S Tech Co Ltd 空白光罩、光罩及其製造方法
KR100948770B1 (ko) * 2008-06-27 2010-03-24 주식회사 에스앤에스텍 블랭크 마스크, 포토마스크 및 이의 제조 방법
TWI567483B (zh) * 2008-09-30 2017-01-21 Ｈｏｙａ股份有限公司 A mask substrate, a mask, a manufacturing method thereof, and a method of manufacturing the semiconductor element
JP5231956B2 (ja) 2008-11-25 2013-07-10 アルバック成膜株式会社 ハーフトーンマスク、ハーフトーンマスクブランクス、ハーフトーンマスクの製造方法、及びハーフトーンマスクブランクスの製造方法
JP5606028B2 (ja) * 2009-09-11 2014-10-15 Ｈｏｙａ株式会社 フォトマスクブランクおよびフォトマスクの製造方法
JP2011197375A (ja) * 2010-03-19 2011-10-06 Dainippon Printing Co Ltd 反射型マスクの製造方法および該製造に用いられる反射型マスクブランク
JP5762819B2 (ja) 2010-05-19 2015-08-12 Hoya株式会社 マスクブランクの製造方法及び転写用マスクの製造方法、並びにマスクブランク及び転写用マスク
US9104112B2 (en) 2010-09-30 2015-08-11 Hoya Corporation Mask blank, method of manufacturing the same, and transfer mask
CN103229099B (zh) 2010-11-22 2015-10-07 信越化学工业株式会社 光掩模坯料、制造光掩模的方法、以及含铬材料膜
JP5728223B2 (ja) 2010-12-27 2015-06-03 アルバック成膜株式会社 ハーフトーンマスク、ハーフトーンマスクブランクス及びハーフトーンマスクの製造方法
JP5997530B2 (ja) 2011-09-07 2016-09-28 Hoya株式会社 マスクブランク、転写用マスク、および半導体デバイスの製造方法
JP5464186B2 (ja) * 2011-09-07 2014-04-09 信越化学工業株式会社 フォトマスクブランク、フォトマスク及びその製造方法
JP6186719B2 (ja) 2011-12-21 2017-08-30 大日本印刷株式会社 大型位相シフトマスクおよび大型位相シフトマスクの製造方法
KR102068952B1 (ko) * 2012-07-13 2020-01-21 호야 가부시키가이샤 마스크 블랭크 및 위상 시프트 마스크의 제조 방법
KR102046729B1 (ko) * 2013-09-24 2019-11-19 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007241065A (ja) 2006-03-10 2007-09-20 Shin Etsu Chem Co Ltd フォトマスクブランク及びフォトマスク
JP2013083933A (ja) 2011-09-28 2013-05-09 Hoya Corp マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法

Also Published As

Publication number Publication date
JP2015222448A (ja) 2015-12-10
US20160187769A1 (en) 2016-06-30
JP6293841B2 (ja) 2018-03-14
KR102067372B1 (ko) 2020-01-16
JPWO2015045801A1 (ja) 2017-03-09
JP2017033016A (ja) 2017-02-09
KR20160021875A (ko) 2016-02-26
TW201738653A (zh) 2017-11-01
TWI644168B (zh) 2018-12-11
KR101823276B1 (ko) 2018-01-29
KR20180011348A (ko) 2018-01-31
JP5837257B2 (ja) 2015-12-24
TW201516560A (zh) 2015-05-01
US10101650B2 (en) 2018-10-16
JP6030203B2 (ja) 2016-11-24
US10527931B2 (en) 2020-01-07
US20190004419A1 (en) 2019-01-03
WO2015045801A1 (ja) 2015-04-02
KR20190130058A (ko) 2019-11-20
TWI597563B (zh) 2017-09-01

Similar Documents

Publication Publication Date Title
KR102046729B1 (ko) 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조방법
KR102243419B1 (ko) 마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 장치의 제조 방법
JP6389375B2 (ja) マスクブランクおよび転写用マスク並びにそれらの製造方法
KR102522452B1 (ko) 마스크 블랭크, 전사용 마스크, 전사용 마스크의 제조방법 및 반도체 디바이스의 제조방법
KR20160138247A (ko) 마스크 블랭크, 전사용 마스크의 제조 방법 및 반도체 장치의 제조 방법
JP6165871B2 (ja) マスクブランク、転写用マスクおよび転写用マスクの製造方法
KR20180008458A (ko) 마스크 블랭크, 전사용 마스크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
JP2016004223A (ja) マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
KR20220052908A (ko) 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법
JP5906143B2 (ja) マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
KR20220066884A (ko) 마스크 블랭크, 위상 시프트 마스크 및 반도체 디바이스의 제조 방법

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

A107 Divisional application of patent
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000