KR102008581B1 - 성막장치, 성막방법, 및 유기 el 표시장치의 제조방법 - Google Patents

성막장치, 성막방법, 및 유기 el 표시장치의 제조방법 Download PDF

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KR102008581B1
KR102008581B1 KR1020170162002A KR20170162002A KR102008581B1 KR 102008581 B1 KR102008581 B1 KR 102008581B1 KR 1020170162002 A KR1020170162002 A KR 1020170162002A KR 20170162002 A KR20170162002 A KR 20170162002A KR 102008581 B1 KR102008581 B1 KR 102008581B1
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South Korea
Prior art keywords
voltage
substrate
electrostatic chuck
film forming
electrode
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KR1020170162002A
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English (en)
Korean (ko)
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KR20190063133A (ko
Inventor
카즈히토 카시쿠라
히로시 이시이
Original Assignee
캐논 톡키 가부시키가이샤
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Priority to KR1020170162002A priority Critical patent/KR102008581B1/ko
Priority to CN202210595770.XA priority patent/CN114959567A/zh
Priority to CN201811006629.1A priority patent/CN109837507B/zh
Priority to JP2018200156A priority patent/JP6954880B2/ja
Publication of KR20190063133A publication Critical patent/KR20190063133A/ko
Application granted granted Critical
Publication of KR102008581B1 publication Critical patent/KR102008581B1/ko
Priority to JP2021161810A priority patent/JP7138757B2/ja

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    • H01L51/56—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L51/0008—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020170162002A 2017-11-29 2017-11-29 성막장치, 성막방법, 및 유기 el 표시장치의 제조방법 KR102008581B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020170162002A KR102008581B1 (ko) 2017-11-29 2017-11-29 성막장치, 성막방법, 및 유기 el 표시장치의 제조방법
CN202210595770.XA CN114959567A (zh) 2017-11-29 2018-08-31 成膜装置以及电子设备的制造方法
CN201811006629.1A CN109837507B (zh) 2017-11-29 2018-08-31 成膜装置、成膜方法以及有机el显示装置的制造方法
JP2018200156A JP6954880B2 (ja) 2017-11-29 2018-10-24 成膜装置、成膜方法、及び有機ｅｌ表示装置の製造方法
JP2021161810A JP7138757B2 (ja) 2017-11-29 2021-09-30 成膜装置、及び電子デバイスの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170162002A KR102008581B1 (ko) 2017-11-29 2017-11-29 성막장치, 성막방법, 및 유기 el 표시장치의 제조방법

Publications (2)

Publication Number Publication Date
KR20190063133A KR20190063133A (ko) 2019-06-07
KR102008581B1 true KR102008581B1 (ko) 2019-08-07

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JP (2) JP6954880B2 (ja)
KR (1) KR102008581B1 (ja)
CN (2) CN109837507B (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102520050B1 (ko) * 2019-09-07 2023-04-07 캐논 톡키 가부시키가이샤 흡착 장치, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법
CN113005398B (zh) * 2019-12-20 2023-04-07 佳能特机株式会社 成膜装置、成膜方法及电子器件的制造方法
KR20210081700A (ko) * 2019-12-24 2021-07-02 캐논 톡키 가부시키가이샤 성막장치 및 이를 사용하여 전자 디바이스를 제조하는 방법
WO2024014528A1 (ja) * 2022-07-15 2024-01-18 大日本印刷株式会社 電子デバイスの製造方法、導電性フィルム、第１積層体及び第２積層体
JP2024035289A (ja) * 2022-09-02 2024-03-14 キヤノントッキ株式会社 成膜装置、成膜装置の駆動方法、及び成膜方法
JP2024066091A (ja) * 2022-11-01 2024-05-15 キヤノントッキ株式会社 成膜装置、成膜装置の駆動方法、及び成膜方法

Citations (2)

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JP4226101B2 (ja) * 1998-05-12 2009-02-18 株式会社アルバック 静電チャックプレート表面からの基板離脱方法
JP2014075372A (ja) * 2010-12-27 2014-04-24 Canon Anelva Corp 静電吸着装置

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JP3296237B2 (ja) * 1997-03-24 2002-06-24 三菱電機株式会社 ウエハの製造方法
JP4484883B2 (ja) * 1997-05-23 2010-06-16 株式会社アルバック 被吸着物の処理方法
JP4884811B2 (ja) * 2006-03-20 2012-02-29 三菱重工業株式会社 ガラス基板の静電吸着装置及びその吸着離脱方法
US8497980B2 (en) * 2007-03-19 2013-07-30 Nikon Corporation Holding apparatus, exposure apparatus, exposure method, and device manufacturing method
JP2009054746A (ja) * 2007-08-27 2009-03-12 Nikon Corp 静電チャック及び静電チャック方法
US20090109595A1 (en) * 2007-10-31 2009-04-30 Sokudo Co., Ltd. Method and system for performing electrostatic chuck clamping in track lithography tools
JP4897030B2 (ja) * 2009-11-09 2012-03-14 東京エレクトロン株式会社 搬送アームの洗浄方法及び基板処理装置
JP2010141352A (ja) * 2010-02-26 2010-06-24 Ulvac Japan Ltd 真空処理方法
JP2014065959A (ja) * 2012-09-27 2014-04-17 Hitachi High-Technologies Corp 蒸着装置、および、蒸着装置における基板設置方法
JP2016195155A (ja) * 2015-03-31 2016-11-17 パナソニックＩｐマネジメント株式会社 プラズマ処理装置およびプラズマ処理方法
CN106256925B (zh) * 2015-06-18 2020-10-02 佳能特机株式会社 真空蒸镀装置、蒸镀膜的制造方法和有机电子器件的制造方法
KR102490641B1 (ko) * 2015-11-25 2023-01-20 삼성디스플레이 주식회사 증착 장치 및 증착 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4226101B2 (ja) * 1998-05-12 2009-02-18 株式会社アルバック 静電チャックプレート表面からの基板離脱方法
JP2014075372A (ja) * 2010-12-27 2014-04-24 Canon Anelva Corp 静電吸着装置

Also Published As

Publication number Publication date
CN109837507B (zh) 2022-06-03
KR20190063133A (ko) 2019-06-07
JP2019099913A (ja) 2019-06-24
JP2022008796A (ja) 2022-01-14
JP6954880B2 (ja) 2021-10-27
JP7138757B2 (ja) 2022-09-16
CN109837507A (zh) 2019-06-04
CN114959567A (zh) 2022-08-30

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