KR102002269B1 - Euv 노광 장치 - Google Patents

Euv 노광 장치 Download PDF

Info

Publication number
KR102002269B1
KR102002269B1 KR1020187024647A KR20187024647A KR102002269B1 KR 102002269 B1 KR102002269 B1 KR 102002269B1 KR 1020187024647 A KR1020187024647 A KR 1020187024647A KR 20187024647 A KR20187024647 A KR 20187024647A KR 102002269 B1 KR102002269 B1 KR 102002269B1
Authority
KR
South Korea
Prior art keywords
temperature
mirror
ref
projection lens
reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020187024647A
Other languages
English (en)
Korean (ko)
Other versions
KR20180099920A (ko
Inventor
노르만 바에르
울리히 로에링
올리버 나트
게로 뷔티히
티모 라우퍼
페테르 퀘르쯔
귀도 림바흐
슈테판 헴바허
홀거 발터
임-분-패트릭 콴
마르쿠스 하우프
프란쯔-요세프 스티켈
얀 판 슈트
Original Assignee
칼 짜이스 에스엠티 게엠베하
에이에스엠엘 네덜란드 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 칼 짜이스 에스엠티 게엠베하, 에이에스엠엘 네덜란드 비.브이. filed Critical 칼 짜이스 에스엠티 게엠베하
Publication of KR20180099920A publication Critical patent/KR20180099920A/ko
Application granted granted Critical
Publication of KR102002269B1 publication Critical patent/KR102002269B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
    • G02B27/0037—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration with diffracting elements
    • G02B27/0043—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration with diffracting elements in projection exposure systems, e.g. microlithographic systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/18—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical projection, e.g. combination of mirror and condenser and objective
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/18—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors
    • G02B7/181—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation
    • G02B7/1815—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation with cooling or heating systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G03B27/54—Lamp housings; Illuminating means
    • G03B27/542—Lamp housings; Illuminating means for copying cameras, reflex exposure lighting
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/061—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements characterised by a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/064—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements having a curved surface

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • General Engineering & Computer Science (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
  • Optical Elements Other Than Lenses (AREA)
KR1020187024647A 2010-07-30 2011-07-28 Euv 노광 장치 Active KR102002269B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US36914210P 2010-07-30 2010-07-30
US61/369,142 2010-07-30
PCT/EP2011/062996 WO2012013747A1 (en) 2010-07-30 2011-07-28 Euv exposure apparatus

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020137002566A Division KR101895083B1 (ko) 2010-07-30 2011-07-28 Euv 노광 장치

Publications (2)

Publication Number Publication Date
KR20180099920A KR20180099920A (ko) 2018-09-05
KR102002269B1 true KR102002269B1 (ko) 2019-07-19

Family

ID=44514689

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020187024647A Active KR102002269B1 (ko) 2010-07-30 2011-07-28 Euv 노광 장치
KR1020137002566A Active KR101895083B1 (ko) 2010-07-30 2011-07-28 Euv 노광 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020137002566A Active KR101895083B1 (ko) 2010-07-30 2011-07-28 Euv 노광 장치

Country Status (7)

Country Link
US (5) US9316929B2 (enExample)
EP (2) EP3674798B1 (enExample)
JP (1) JP5941463B2 (enExample)
KR (2) KR102002269B1 (enExample)
CN (1) CN103038708B (enExample)
TW (4) TWI475330B (enExample)
WO (4) WO2012013747A1 (enExample)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI475330B (zh) * 2010-07-30 2015-03-01 卡爾蔡司Ｓｍｔ有限公司 超紫外線曝光裝置
DE102010061950A1 (de) * 2010-11-25 2012-05-31 Carl Zeiss Smt Gmbh Verfahren sowie Anordnung zum Bestimmen des Erwärmungszustandes eines Spiegels in einem optischen System
CN103814331B (zh) * 2011-09-21 2016-06-29 卡尔蔡司Smt有限责任公司 在微光刻投射曝光设备中热致动反射镜的布置
DE102012201075A1 (de) 2012-01-25 2013-07-25 Carl Zeiss Smt Gmbh Optische Anordnung, EUV-Lithographieanlage und Verfahren zum Konfigurieren einer optischen Anordnung
DE102012212898A1 (de) 2012-07-24 2014-01-30 Carl Zeiss Smt Gmbh Spiegelanordnung für eine EUV-Projektionsbelichtungsanlage, Verfahren zum Betreiben derselben, sowie EUV-Projektionsbelichtungsanlage
DE102012213671A1 (de) * 2012-08-02 2014-02-06 Carl Zeiss Smt Gmbh Spiegelanordnung für eine EUV-Lithographieanlage und Verfahren zur Herstellung derselben
DE102013203338A1 (de) * 2013-02-28 2014-08-28 Carl Zeiss Smt Gmbh Modellbasierte Steuerung einer optischen Abbildungseinrichtung
WO2014139543A1 (en) 2013-03-13 2014-09-18 Carl Zeiss Smt Gmbh Microlithographic apparatus
DE102013204427A1 (de) 2013-03-14 2014-09-18 Carl Zeiss Smt Gmbh Anordnung zur thermischen Aktuierung eines Spiegels, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
DE102013211310A1 (de) * 2013-06-17 2014-12-18 Carl Zeiss Smt Gmbh EUV-Abbildungsvorrichtung
DE102013213842A1 (de) * 2013-07-16 2015-01-22 Carl Zeiss Smt Gmbh Optisches Bauelement
IL234729B (en) 2013-09-20 2021-02-28 Asml Netherlands Bv A light source operated by a laser and a method using a mode mixer
DE102013219808A1 (de) * 2013-09-30 2015-04-02 Heraeus Quarzglas Gmbh & Co. Kg Spiegelblank für EUV Lithographie ohne Ausdehnung unter EUV-Bestrahlung
DE102013224435A1 (de) * 2013-11-28 2015-05-28 Carl Zeiss Smt Gmbh Messanordnung zur Messung optischer Eigenschaften eines reflektiven optischen Elements, insbesondere für die Mikrolithographie
US9338870B2 (en) * 2013-12-30 2016-05-10 Asml Netherlands B.V. Extreme ultraviolet light source
DE102014202737A1 (de) * 2014-02-14 2015-08-20 Carl Zeiss Smt Gmbh Lagerelement und system zum lagern eines optischen elements
DE102014202755A1 (de) 2014-02-14 2015-08-20 Carl Zeiss Smt Gmbh Verfahren zur Verlagerung mindestens eines optischen Bauelements
DE102014204171A1 (de) 2014-03-06 2015-09-24 Carl Zeiss Smt Gmbh Optisches Element und optische Anordnung damit
DE102014206765A1 (de) 2014-04-08 2015-10-08 Carl Zeiss Smt Gmbh Spiegelanordnung, Projektionsobjektiv und EUV-Lithographieanlage
TWI663481B (zh) * 2014-06-03 2019-06-21 荷蘭商Ａｓｍｌ荷蘭公司 用於補償一曝光誤差的方法、元件製造方法、基板台、微影裝置、控制系統、用於量測反射率的方法、及用於量測一極紫外線輻射劑量的方法
DE102014212691A1 (de) 2014-07-01 2014-08-28 Carl Zeiss Smt Gmbh Optisches system für eine lithographieanlage sowie lithographieanlage
DE102014216458A1 (de) 2014-08-19 2016-02-25 Carl Zeiss Smt Gmbh Optisches Element mit einer Beschichtung zur Beeinflussung von Heizstrahlung und optische Anordnung
DE102014216631A1 (de) * 2014-08-21 2016-02-25 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage, Spiegelmodul hierfür, sowie Verfahren zum Betrieb des Spiegelmoduls
US9772255B1 (en) * 2014-12-01 2017-09-26 Lockheed Martin Corporation Optical element surface alteration to correct wavefront error
DE102015201020A1 (de) 2015-01-22 2016-07-28 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit Manipulator sowie Verfahren zum Steuern einer Projektionsbelichtungsanlage
DE102015225509A1 (de) * 2015-12-16 2017-06-22 Carl Zeiss Smt Gmbh Reflektives optisches Element
US10527830B2 (en) * 2016-08-12 2020-01-07 Kla-Tencor Corporation Off-axis reflective afocal optical relay
DE102016225701A1 (de) 2016-12-21 2017-03-02 Carl Zeiss Smt Gmbh Verfahren zum Betreiben einer EUV-Lithographieanlage
DE102017205405A1 (de) * 2017-03-30 2018-10-04 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
CN110546573B (zh) * 2017-04-11 2022-10-04 Asml荷兰有限公司 光刻设备
DE102017217266A1 (de) * 2017-09-28 2019-03-28 Carl Zeiss Smt Gmbh Verfahren zur Bestimmung von Eigenschaften einer EUV-Quelle
DE102018200539A1 (de) * 2018-01-15 2019-07-18 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Halbleiterlithographie mit Wärme-Abschirmelementen
DE102018208653A1 (de) 2018-05-30 2019-12-05 Carl Zeiss Smt Gmbh Verfahren sowie Vorrichtung zum Bestimmen des Erwärmungszustandes eines Spiegels in einem optischen System
JP7208728B2 (ja) * 2018-07-23 2023-01-19 キヤノン株式会社 露光装置、および物品の製造方法
US10613444B2 (en) * 2018-08-28 2020-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor apparatus and method of operating the same
KR102678312B1 (ko) 2018-10-18 2024-06-25 삼성전자주식회사 Euv 노광 장치와 노광 방법, 및 그 노광 방법을 포함한 반도체 소자 제조 방법
CN109960031B (zh) * 2019-04-28 2024-02-09 湖南谱峰光电有限公司 浮空器激光中继镜系统及其仿真装置和仿真方法
US11474439B2 (en) * 2019-06-25 2022-10-18 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and method of manufacturing article
DE102019213828A1 (de) * 2019-09-11 2021-03-11 Robert Bosch Gmbh Verfahren zum Herstellen einer Abdeckscheibe für eine Sensoreinrichtung, Abdeckscheibe und Sensoreinrichtung
DE102019219289A1 (de) 2019-12-11 2021-06-17 Carl Zeiss Smt Gmbh Optisches System, sowie Heizanordnung und Verfahren zum Heizen eines optischen Elements in einem optischen System
CN111025854B (zh) * 2019-12-23 2021-05-14 中国科学院长春光学精密机械与物理研究所 一种混和式投影物镜、投影曝光设备及成像系统
US11796797B2 (en) 2020-03-09 2023-10-24 Lockheed Martin Corporation Wavefront error correction of a conformal optical component using a planar lens
DE102020207750A1 (de) * 2020-06-23 2021-04-01 Carl Zeiss Smt Gmbh Baugruppe in einem optischen System, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
DE102020207752A1 (de) 2020-06-23 2021-12-23 Carl Zeiss Smt Gmbh Heizanordnung und Verfahren zum Heizen eines optischen Elements
DE102020208045A1 (de) * 2020-06-29 2021-12-30 Carl Zeiss Smt Gmbh Verfahren zur Ermittlung eines Bildes eines Objekts
US11287751B2 (en) * 2020-07-29 2022-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for lens heating control
WO2022028710A1 (en) * 2020-08-07 2022-02-10 Carl Zeiss Smt Gmbh Optical system and method of operating an optical system
DE102020212743A1 (de) * 2020-10-08 2022-04-14 Carl Zeiss Smt Gmbh Adaptives optisches Element für die Mikrolithographie
DE102020213983A1 (de) * 2020-11-06 2022-05-12 Carl Zeiss Smt Gmbh Optisches System, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
DE102021201258A1 (de) * 2021-02-10 2022-08-11 Carl Zeiss Smt Gmbh Verfahren zum Heizen eines optischen Elements in einer mikrolithographischen Projektionsbelichtungsanlage, sowie optisches System
CN113075788A (zh) * 2021-04-02 2021-07-06 中国科学院长春光学精密机械与物理研究所 多谱段多通道共口径变焦成像光学系统
EP4083708A1 (en) * 2021-04-29 2022-11-02 ASML Netherlands B.V. Mirror system
CN113532548B (zh) * 2021-08-23 2022-04-08 清华大学 一种高温环境下温度变形同步测量系统和方法
JP2023050611A (ja) * 2021-09-30 2023-04-11 株式会社エスケーエレクトロニクス フォトマスク及びフォトマスクの製造方法
KR20240119295A (ko) * 2021-12-14 2024-08-06 칼 짜이스 에스엠테 게엠베하 적어도 하나의 중공 구조체를 생성하기 위한 방법 및 디바이스, 미러, euv 리소그래피 시스템, 유체 공급 디바이스 및 유체를 공급하기 위한 방법
DE102022205531A1 (de) 2022-05-31 2022-07-28 Carl Zeiss Smt Gmbh Optisches Element mit photovoltaischer Zelle und EUV-Lithographiesystem
DE102022114969A1 (de) * 2022-06-14 2023-12-14 Carl Zeiss Smt Gmbh Verfahren zum Heizen eines optischen Elements sowie optisches System
WO2023241849A1 (de) * 2022-06-14 2023-12-21 Carl Zeiss Smt Gmbh Verfahren zum heizen eines optischen elements sowie optisches system
US20240019786A1 (en) * 2022-07-18 2024-01-18 Taiwan Semiconductor Manufacturing Company Euv mirror with improved optical stability
DE102022210244A1 (de) * 2022-09-28 2024-03-28 Carl Zeiss Smt Gmbh Spiegelvorrichtung, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage, und Verfahren zum Messen der Temperatur eines Spiegels
DE102022211637A1 (de) 2022-11-04 2023-09-07 Carl Zeiss Smt Gmbh Thermisch deformierbares Spiegelelement und dessen Verwendung, thermisches Deformationssystem und Lithographiesystem
DE102022211638A1 (de) 2022-11-04 2023-11-09 Carl Zeiss Smt Gmbh Optische Anordnung und EUV-Lithographiesystem
BE1031741B1 (nl) * 2023-06-27 2025-02-04 Newson Nv Lichtrichtapparaat met verbeterd temperatuurbeheer
DE102023209644A1 (de) * 2023-09-29 2024-08-29 Carl Zeiss Smt Gmbh Verfahren zum Betreiben eines EUV-Spiegelsystems, EUV-Spiegelsystem, Projektionsobjektiv für eine mikrolithografische Projektionsbelichtungsanlage, Computerprogrammprodukt

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005244012A (ja) * 2004-02-27 2005-09-08 Canon Inc 光学系及びそれを用いた露光装置、デバイスの製造方法
WO2009026970A1 (en) * 2007-08-24 2009-03-05 Carl Zeiss Smt Ag Controllable optical element and method for operating an optical element with thermal actuators and projection exposure apparatus for semiconductor lithography

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE221563C (enExample)
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DE69220868T2 (de) * 1991-09-07 1997-11-06 Canon K.K., Tokio/Tokyo System zur Stabilisierung der Formen von optischen Elementen, Belichtungsvorrichtung unter Verwendung dieses Systems und Verfahren zur Herstellung von Halbleitervorrichtungen
DE10138313A1 (de) 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
DE10000191B8 (de) * 2000-01-05 2005-10-06 Carl Zeiss Smt Ag Projektbelichtungsanlage der Mikrolithographie
US7410265B2 (en) 2000-09-13 2008-08-12 Carl Zeiss Smt Ag Focusing-device for the radiation from a light source
US20030125184A1 (en) 2001-12-21 2003-07-03 Schott Glas Glass ceramic product with variably adjustable zero crossing of the CTE-T curve
US6994444B2 (en) * 2002-06-14 2006-02-07 Asml Holding N.V. Method and apparatus for managing actinic intensity transients in a lithography mirror
EP1533832A1 (en) 2002-06-25 2005-05-25 Nikon Corporation Optical unit and x-ray exposure system
US7428037B2 (en) * 2002-07-24 2008-09-23 Carl Zeiss Smt Ag Optical component that includes a material having a thermal longitudinal expansion with a zero crossing
DE10233828A1 (de) 2002-07-24 2004-02-12 Carl Zeiss Semiconductor Manufacturing Technologies Ag Optische Komponente umfassend ein Material mit einem Nulldurchgang der thermischer Längsausdehnung
AU2003271130A1 (en) * 2002-10-10 2004-05-04 Nikon Corporation Ultra-short ultraviolet optical system-use reflection mirror, ultra-short ultraviolet optical system, application method for ultra-short ultraviolet optical system, production method for ultra-short ultraviolet optical system, ultra-short ultraviolet exposure system, and application method for ultra-short ultraviolet exposu
JP4458323B2 (ja) * 2003-02-13 2010-04-28 キヤノン株式会社 保持装置、当該保持装置を有する露光装置、及びデバイス製造方法
JP4311711B2 (ja) * 2003-02-24 2009-08-12 キヤノン株式会社 露光装置及びデバイス製造方法
US7221463B2 (en) 2003-03-14 2007-05-22 Canon Kabushiki Kaisha Positioning apparatus, exposure apparatus, and method for producing device
DE10317662A1 (de) * 2003-04-17 2004-11-18 Carl Zeiss Smt Ag Projektionsobjektiv, mikrolithographische Projektionsbelichtungsanlage und Verfahren zur Herstellung einer Halbleiterschaltung
EP1477850A1 (en) * 2003-05-13 2004-11-17 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7236232B2 (en) 2003-07-01 2007-06-26 Nikon Corporation Using isotopically specified fluids as optical elements
JP4262031B2 (ja) * 2003-08-19 2009-05-13 キヤノン株式会社 露光装置及びデバイスの製造方法
JP5041810B2 (ja) 2003-09-12 2012-10-03 カール・ツァイス・エスエムティー・ゲーエムベーハー 光学素子操作装置
WO2005040925A1 (de) * 2003-09-27 2005-05-06 Carl Zeiss Smt Ag Euv-projektionsobjektiv mit spiegeln aus materialien mit unterschiedlichem vorzeichen der steigung der temperaturabhängigkeit des wärmeausdehnungskoeffizienten nahe der nulldurchgangstemperatur
US20050074552A1 (en) 2003-10-07 2005-04-07 Howard Ge Photoresist coating process for microlithography
EP1624467A3 (en) * 2003-10-20 2007-05-30 ASML Netherlands BV Lithographic apparatus and device manufacturing method
US7295284B2 (en) * 2004-02-27 2007-11-13 Canon Kk Optical system, exposure apparatus using the same and device manufacturing method
JP4393227B2 (ja) * 2004-02-27 2010-01-06 キヤノン株式会社 露光装置、デバイスの製造方法、露光装置の製造方法
US7304715B2 (en) * 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007142190A (ja) * 2005-11-18 2007-06-07 Canon Inc 露光装置及びデバイス製造方法
US20090122428A1 (en) * 2007-11-09 2009-05-14 Nikon Corporation Reflective optical elements exhibiting multimetallic-like self-correction of distortions caused by heating
EP2217539A4 (en) 2007-11-30 2015-07-01 Corning Inc LOW DILATION GLASS MATERIAL HAVING A LOW GRADIENT OF EXPANSION POWER
US7960701B2 (en) * 2007-12-20 2011-06-14 Cymer, Inc. EUV light source components and methods for producing, using and refurbishing same
WO2009116348A1 (ja) 2008-03-18 2009-09-24 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP5171482B2 (ja) * 2008-08-27 2013-03-27 キヤノン株式会社 露光装置およびデバイス製造方法
DE102008046699B4 (de) * 2008-09-10 2014-03-13 Carl Zeiss Smt Gmbh Abbildende Optik
EP2169464A1 (en) 2008-09-29 2010-03-31 Carl Zeiss SMT AG Illumination system of a microlithographic projection exposure apparatus
NL2003223A (en) 2008-09-30 2010-03-31 Asml Netherlands Bv Projection system, lithographic apparatus, method of postitioning an optical element and method of projecting a beam of radiation onto a substrate.
DE102010028488A1 (de) * 2010-05-03 2011-11-03 Carl Zeiss Smt Gmbh Substrate für Spiegel für die EUV-Lithographie und deren Herstellung
TWI475330B (zh) * 2010-07-30 2015-03-01 卡爾蔡司Ｓｍｔ有限公司 超紫外線曝光裝置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005244012A (ja) * 2004-02-27 2005-09-08 Canon Inc 光学系及びそれを用いた露光装置、デバイスの製造方法
WO2009026970A1 (en) * 2007-08-24 2009-03-05 Carl Zeiss Smt Ag Controllable optical element and method for operating an optical element with thermal actuators and projection exposure apparatus for semiconductor lithography

Also Published As

Publication number Publication date
US9316929B2 (en) 2016-04-19
KR101895083B1 (ko) 2018-10-18
TW201229676A (en) 2012-07-16
JP2013533633A (ja) 2013-08-22
TWI475330B (zh) 2015-03-01
EP3674798A1 (en) 2020-07-01
CN103038708B (zh) 2016-08-17
TW201229674A (en) 2012-07-16
US20170315449A1 (en) 2017-11-02
EP2598947A1 (en) 2013-06-05
EP2598947B1 (en) 2020-04-29
WO2012013748A1 (en) 2012-02-02
US10317802B2 (en) 2019-06-11
WO2012013747A1 (en) 2012-02-02
CN103038708A (zh) 2013-04-10
EP3674798C0 (en) 2025-09-03
US20190310555A1 (en) 2019-10-10
TW201222159A (en) 2012-06-01
US20130141707A1 (en) 2013-06-06
WO2012013746A1 (en) 2012-02-02
US10031423B2 (en) 2018-07-24
US10684551B2 (en) 2020-06-16
EP3674798B1 (en) 2025-09-03
TWI501046B (zh) 2015-09-21
TW201229675A (en) 2012-07-16
US20180299784A1 (en) 2018-10-18
WO2012013751A1 (en) 2012-02-02
JP5941463B2 (ja) 2016-06-29
KR20180099920A (ko) 2018-09-05
US20160195818A1 (en) 2016-07-07
TWI509366B (zh) 2015-11-21
TWI498679B (zh) 2015-09-01
KR20130096231A (ko) 2013-08-29
US9746778B2 (en) 2017-08-29

Similar Documents

Publication Publication Date Title
KR102002269B1 (ko) Euv 노광 장치
JP6318200B2 (ja) 光学素子の温度制御装置
KR102073038B1 (ko) Euv 리소그래피를 위한 광학 장치
US20220373899A1 (en) Projection exposure apparatus with a thermal manipulator
KR20230131202A (ko) 광학 시스템 및 광학 시스템을 동작시키는 방법
CN116830003A (zh) 光学系统和用于操作光学系统的方法

Legal Events

Date Code Title Description
A107 Divisional application of patent
A201 Request for examination
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20180827

Application number text: 1020137002566

Filing date: 20130130

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20181127

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20190424

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20190715

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20190715

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20220707

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20240704

Start annual number: 6

End annual number: 6