JP5941463B2 - Ｅｕｖ露光装置 - Google Patents

Ｅｕｖ露光装置 Download PDF

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Publication number
JP5941463B2
JP5941463B2 JP2013521147A JP2013521147A JP5941463B2 JP 5941463 B2 JP5941463 B2 JP 5941463B2 JP 2013521147 A JP2013521147 A JP 2013521147A JP 2013521147 A JP2013521147 A JP 2013521147A JP 5941463 B2 JP5941463 B2 JP 5941463B2
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Japan
Prior art keywords
temperature
ref
projection lens
mirror
optical element
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JP2013521147A
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Japanese (ja)
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JP2013533633A (ja
JP2013533633A5 (enExample
Inventor
ベーア，ノーマン
レーリンク，ウルリッヒ
ナット，オリファー
ヴィティッヒ，ゲロ
ロイファー，ティモ
キュルツ，ペーター
リムバッハ，グイド
ヘムバッハー，シュテファン
ヴァルター，ホルガー
クワン，イム−ブン−パトリック
ハウフ，マルクス
シュティッケル，フランツ−ヨーゼフ
ファン・シュート，ヤン
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ASML Netherlands BV
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ASML Netherlands BV
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Publication of JP2013533633A5 publication Critical patent/JP2013533633A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0025—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration
    • G02B27/0037—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration with diffracting elements
    • G02B27/0043—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical correction, e.g. distorsion, aberration with diffracting elements in projection exposure systems, e.g. microlithographic systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/18—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for optical projection, e.g. combination of mirror and condenser and objective
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/18—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors
    • G02B7/181—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation
    • G02B7/1815—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation with cooling or heating systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G03B27/54—Lamp housings; Illuminating means
    • G03B27/542—Lamp housings; Illuminating means for copying cameras, reflex exposure lighting
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/061—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements characterised by a multilayer structure
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/064—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements having a curved surface

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • General Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
JP2013521147A 2010-07-30 2011-07-28 Ｅｕｖ露光装置 Active JP5941463B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US36914210P 2010-07-30 2010-07-30
US61/369,142 2010-07-30
PCT/EP2011/062996 WO2012013747A1 (en) 2010-07-30 2011-07-28 Euv exposure apparatus

Publications (3)

Publication Number Publication Date
JP2013533633A JP2013533633A (ja) 2013-08-22
JP2013533633A5 JP2013533633A5 (enExample) 2014-09-11
JP5941463B2 true JP5941463B2 (ja) 2016-06-29

Family

ID=44514689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013521147A Active JP5941463B2 (ja) 2010-07-30 2011-07-28 Ｅｕｖ露光装置

Country Status (7)

Country Link
US (5) US9316929B2 (enExample)
EP (2) EP3674798B1 (enExample)
JP (1) JP5941463B2 (enExample)
KR (2) KR102002269B1 (enExample)
CN (1) CN103038708B (enExample)
TW (4) TWI475330B (enExample)
WO (4) WO2012013747A1 (enExample)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103038708B (zh) 2010-07-30 2016-08-17 卡尔蔡司Smt有限责任公司 Euv曝光设备
DE102010061950A1 (de) * 2010-11-25 2012-05-31 Carl Zeiss Smt Gmbh Verfahren sowie Anordnung zum Bestimmen des Erwärmungszustandes eines Spiegels in einem optischen System
WO2013041134A1 (en) * 2011-09-21 2013-03-28 Carl Zeiss Smt Gmbh Arrangement for thermal actuation of a mirror in a microlithographic projection exposure apparatus
DE102012201075A1 (de) 2012-01-25 2013-07-25 Carl Zeiss Smt Gmbh Optische Anordnung, EUV-Lithographieanlage und Verfahren zum Konfigurieren einer optischen Anordnung
DE102012212898A1 (de) * 2012-07-24 2014-01-30 Carl Zeiss Smt Gmbh Spiegelanordnung für eine EUV-Projektionsbelichtungsanlage, Verfahren zum Betreiben derselben, sowie EUV-Projektionsbelichtungsanlage
DE102012213671A1 (de) * 2012-08-02 2014-02-06 Carl Zeiss Smt Gmbh Spiegelanordnung für eine EUV-Lithographieanlage und Verfahren zur Herstellung derselben
DE102013203338A1 (de) * 2013-02-28 2014-08-28 Carl Zeiss Smt Gmbh Modellbasierte Steuerung einer optischen Abbildungseinrichtung
WO2014139543A1 (en) * 2013-03-13 2014-09-18 Carl Zeiss Smt Gmbh Microlithographic apparatus
DE102013204427A1 (de) * 2013-03-14 2014-09-18 Carl Zeiss Smt Gmbh Anordnung zur thermischen Aktuierung eines Spiegels, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
DE102013211310A1 (de) * 2013-06-17 2014-12-18 Carl Zeiss Smt Gmbh EUV-Abbildungsvorrichtung
DE102013213842A1 (de) * 2013-07-16 2015-01-22 Carl Zeiss Smt Gmbh Optisches Bauelement
IL234729B (en) * 2013-09-20 2021-02-28 Asml Netherlands Bv A light source operated by a laser and a method using a mode mixer
DE102013219808A1 (de) * 2013-09-30 2015-04-02 Heraeus Quarzglas Gmbh & Co. Kg Spiegelblank für EUV Lithographie ohne Ausdehnung unter EUV-Bestrahlung
DE102013224435A1 (de) * 2013-11-28 2015-05-28 Carl Zeiss Smt Gmbh Messanordnung zur Messung optischer Eigenschaften eines reflektiven optischen Elements, insbesondere für die Mikrolithographie
US9338870B2 (en) * 2013-12-30 2016-05-10 Asml Netherlands B.V. Extreme ultraviolet light source
DE102014202737A1 (de) * 2014-02-14 2015-08-20 Carl Zeiss Smt Gmbh Lagerelement und system zum lagern eines optischen elements
DE102014202755A1 (de) 2014-02-14 2015-08-20 Carl Zeiss Smt Gmbh Verfahren zur Verlagerung mindestens eines optischen Bauelements
DE102014204171A1 (de) 2014-03-06 2015-09-24 Carl Zeiss Smt Gmbh Optisches Element und optische Anordnung damit
DE102014206765A1 (de) 2014-04-08 2015-10-08 Carl Zeiss Smt Gmbh Spiegelanordnung, Projektionsobjektiv und EUV-Lithographieanlage
TWI663481B (zh) * 2014-06-03 2019-06-21 荷蘭商Ａｓｍｌ荷蘭公司 用於補償一曝光誤差的方法、元件製造方法、基板台、微影裝置、控制系統、用於量測反射率的方法、及用於量測一極紫外線輻射劑量的方法
DE102014212691A1 (de) 2014-07-01 2014-08-28 Carl Zeiss Smt Gmbh Optisches system für eine lithographieanlage sowie lithographieanlage
DE102014216458A1 (de) 2014-08-19 2016-02-25 Carl Zeiss Smt Gmbh Optisches Element mit einer Beschichtung zur Beeinflussung von Heizstrahlung und optische Anordnung
DE102014216631A1 (de) 2014-08-21 2016-02-25 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage, Spiegelmodul hierfür, sowie Verfahren zum Betrieb des Spiegelmoduls
US9772255B1 (en) 2014-12-01 2017-09-26 Lockheed Martin Corporation Optical element surface alteration to correct wavefront error
DE102015201020A1 (de) 2015-01-22 2016-07-28 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit Manipulator sowie Verfahren zum Steuern einer Projektionsbelichtungsanlage
DE102015225509A1 (de) * 2015-12-16 2017-06-22 Carl Zeiss Smt Gmbh Reflektives optisches Element
US10527830B2 (en) * 2016-08-12 2020-01-07 Kla-Tencor Corporation Off-axis reflective afocal optical relay
DE102016225701A1 (de) 2016-12-21 2017-03-02 Carl Zeiss Smt Gmbh Verfahren zum Betreiben einer EUV-Lithographieanlage
DE102017205405A1 (de) * 2017-03-30 2018-10-04 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
CN110546573B (zh) * 2017-04-11 2022-10-04 Asml荷兰有限公司 光刻设备
DE102017217266A1 (de) * 2017-09-28 2019-03-28 Carl Zeiss Smt Gmbh Verfahren zur Bestimmung von Eigenschaften einer EUV-Quelle
DE102018200539A1 (de) * 2018-01-15 2019-07-18 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Halbleiterlithographie mit Wärme-Abschirmelementen
DE102018208653A1 (de) 2018-05-30 2019-12-05 Carl Zeiss Smt Gmbh Verfahren sowie Vorrichtung zum Bestimmen des Erwärmungszustandes eines Spiegels in einem optischen System
JP7208728B2 (ja) 2018-07-23 2023-01-19 キヤノン株式会社 露光装置、および物品の製造方法
US10613444B2 (en) * 2018-08-28 2020-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor apparatus and method of operating the same
KR102678312B1 (ko) 2018-10-18 2024-06-25 삼성전자주식회사 Euv 노광 장치와 노광 방법, 및 그 노광 방법을 포함한 반도체 소자 제조 방법
CN109960031B (zh) * 2019-04-28 2024-02-09 湖南谱峰光电有限公司 浮空器激光中继镜系统及其仿真装置和仿真方法
US11474439B2 (en) * 2019-06-25 2022-10-18 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and method of manufacturing article
DE102019213828A1 (de) * 2019-09-11 2021-03-11 Robert Bosch Gmbh Verfahren zum Herstellen einer Abdeckscheibe für eine Sensoreinrichtung, Abdeckscheibe und Sensoreinrichtung
DE102019219289A1 (de) 2019-12-11 2021-06-17 Carl Zeiss Smt Gmbh Optisches System, sowie Heizanordnung und Verfahren zum Heizen eines optischen Elements in einem optischen System
CN111025854B (zh) * 2019-12-23 2021-05-14 中国科学院长春光学精密机械与物理研究所 一种混和式投影物镜、投影曝光设备及成像系统
US11796797B2 (en) 2020-03-09 2023-10-24 Lockheed Martin Corporation Wavefront error correction of a conformal optical component using a planar lens
DE102020207750A1 (de) * 2020-06-23 2021-04-01 Carl Zeiss Smt Gmbh Baugruppe in einem optischen System, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
DE102020207752A1 (de) 2020-06-23 2021-12-23 Carl Zeiss Smt Gmbh Heizanordnung und Verfahren zum Heizen eines optischen Elements
DE102020208045A1 (de) * 2020-06-29 2021-12-30 Carl Zeiss Smt Gmbh Verfahren zur Ermittlung eines Bildes eines Objekts
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