KR102001747B1 - Ｉｎ-Ｇａ-Ｏ계 산화물 소결체, 타겟, 산화물 반도체 박막 및 이들의 제조방법 - Google Patents

Ｉｎ-Ｇａ-Ｏ계 산화물 소결체, 타겟, 산화물 반도체 박막 및 이들의 제조방법 Download PDF

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KR102001747B1
KR102001747B1 KR1020177020621A KR20177020621A KR102001747B1 KR 102001747 B1 KR102001747 B1 KR 102001747B1 KR 1020177020621 A KR1020177020621 A KR 1020177020621A KR 20177020621 A KR20177020621 A KR 20177020621A KR 102001747 B1 KR102001747 B1 KR 102001747B1
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oxide
thin film
sintered body
indium oxide
target
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KR20170087977A (ko
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가즈아키 에바타
시게카즈 도마이
고키 야노
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이데미쓰 고산 가부시키가이샤
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  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
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KR101861459B1 (ko) * 2014-03-14 2018-05-28 스미토모 긴조쿠 고잔 가부시키가이샤 산화물 소결체, 스퍼터링용 타겟 및 그것을 이용하여 얻어지는 산화물 반도체 박막
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