KR101998453B1 - 연마 방법 및 연마 장치 - Google Patents

연마 방법 및 연마 장치 Download PDF

Info

Publication number
KR101998453B1
KR101998453B1 KR1020150009142A KR20150009142A KR101998453B1 KR 101998453 B1 KR101998453 B1 KR 101998453B1 KR 1020150009142 A KR1020150009142 A KR 1020150009142A KR 20150009142 A KR20150009142 A KR 20150009142A KR 101998453 B1 KR101998453 B1 KR 101998453B1
Authority
KR
South Korea
Prior art keywords
polishing
film thickness
substrate
wafer
measurement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020150009142A
Other languages
English (en)
Korean (ko)
Other versions
KR20150088193A (ko
Inventor
츠네오 도리코시
히로후미 오타키
Original Assignee
가부시키가이샤 에바라 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 에바라 세이사꾸쇼 filed Critical 가부시키가이샤 에바라 세이사꾸쇼
Publication of KR20150088193A publication Critical patent/KR20150088193A/ko
Application granted granted Critical
Publication of KR101998453B1 publication Critical patent/KR101998453B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H01L21/304
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • B24B37/013Devices or means for detecting lapping completion
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • H01L21/02024
    • H01L22/12
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0451Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0472Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604Process monitoring, e.g. flow or thickness monitoring
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/402Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
KR1020150009142A 2014-01-23 2015-01-20 연마 방법 및 연마 장치 Active KR101998453B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-010800 2014-01-23
JP2014010800A JP6374169B2 (ja) 2014-01-23 2014-01-23 研磨方法および研磨装置

Publications (2)

Publication Number Publication Date
KR20150088193A KR20150088193A (ko) 2015-07-31
KR101998453B1 true KR101998453B1 (ko) 2019-07-09

Family

ID=53687476

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150009142A Active KR101998453B1 (ko) 2014-01-23 2015-01-20 연마 방법 및 연마 장치

Country Status (6)

Country Link
US (1) US9524913B2 (https=)
JP (1) JP6374169B2 (https=)
KR (1) KR101998453B1 (https=)
CN (1) CN104802069B (https=)
SG (1) SG10201500455QA (https=)
TW (1) TWI689373B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9505101B1 (en) * 2015-06-24 2016-11-29 The Boeing Company Automated sanding system and method
CN111283548B (zh) * 2018-12-07 2023-07-18 株式会社迪思科 圆板状工件的加工方法
WO2020129714A1 (ja) * 2018-12-19 2020-06-25 東京エレクトロン株式会社 基板処理装置、および基板処理方法
JP7349278B2 (ja) * 2019-07-11 2023-09-22 株式会社ディスコ 加工装置
KR102721977B1 (ko) * 2019-10-07 2024-10-28 삼성전자주식회사 반도체 기판 측정 장치, 이를 이용한 반도체 기판 처리 장치 및 반도체 소자 형성 방법
JP7581374B2 (ja) * 2020-11-27 2024-11-12 東京エレクトロン株式会社 基板処理システム及び基板処理方法
CN116330162A (zh) * 2023-03-10 2023-06-27 华虹半导体(无锡)有限公司 一种cmp警报方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006093180A (ja) 2004-09-21 2006-04-06 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2009274139A (ja) 2008-05-12 2009-11-26 Ebara Corp 研磨方法及び研磨装置、並びに研磨装置制御用プログラム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5885138A (en) * 1993-09-21 1999-03-23 Ebara Corporation Method and apparatus for dry-in, dry-out polishing and washing of a semiconductor device
KR100253085B1 (ko) * 1997-07-10 2000-04-15 윤종용 측정장치를구비한웨이퍼폴리싱장치및폴리싱방법
US7097534B1 (en) * 2000-07-10 2006-08-29 Applied Materials, Inc. Closed-loop control of a chemical mechanical polisher
US6447370B1 (en) * 2001-04-17 2002-09-10 Speedfam-Ipec Corporation Inline metrology device
US6967715B2 (en) * 2002-12-06 2005-11-22 International Business Machines Corporation Method and apparatus for optical film measurements in a controlled environment
US7118451B2 (en) * 2004-02-27 2006-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. CMP apparatus and process sequence method
JP2006231471A (ja) * 2005-02-25 2006-09-07 Speedfam Co Ltd 両面ポリッシュ加工機とその定寸制御方法
ITBO20070504A1 (it) * 2007-07-20 2009-01-21 Marposs Spa Apparecchiatura e metodo per il controllo dello spessore di un elemento in lavorazione
JP2009050944A (ja) * 2007-08-24 2009-03-12 Disco Abrasive Syst Ltd 基板の厚さ測定方法および基板の加工装置
US20140141694A1 (en) * 2012-11-21 2014-05-22 Applied Materials, Inc. In-Sequence Spectrographic Sensor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006093180A (ja) 2004-09-21 2006-04-06 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2009274139A (ja) 2008-05-12 2009-11-26 Ebara Corp 研磨方法及び研磨装置、並びに研磨装置制御用プログラム

Also Published As

Publication number Publication date
US9524913B2 (en) 2016-12-20
KR20150088193A (ko) 2015-07-31
US20150221562A1 (en) 2015-08-06
JP6374169B2 (ja) 2018-08-15
TWI689373B (zh) 2020-04-01
JP2015136775A (ja) 2015-07-30
CN104802069B (zh) 2018-09-28
TW201536477A (zh) 2015-10-01
SG10201500455QA (en) 2015-08-28
CN104802069A (zh) 2015-07-29

Similar Documents

Publication Publication Date Title
KR101998453B1 (ko) 연마 방법 및 연마 장치
TWI632988B (zh) 膜厚測定裝置、膜厚測定方法、及具備膜厚測定裝置的研磨裝置
TWI567813B (zh) Grinding method
CN104275642B (zh) 研磨装置及研磨状态监视方法
CN110476226B (zh) 基板处理装置
TWI715539B (zh) 處理模組、處理裝置、及處理方法
KR101685240B1 (ko) 연마 방법
JP7141204B2 (ja) 研磨装置、及び研磨方法
JP6680040B2 (ja) 基板処理装置、液処理方法、及び記憶媒体
CN104813449A (zh) 多平台多头的研磨架构
KR20140106405A (ko) 연마 장치에 사용되는 연마 부재의 프로파일 조정 방법 및 연마 장치
JP4689367B2 (ja) 研磨プロファイル又は研磨量の予測方法、研磨方法及び研磨装置
CN107263303B (zh) 示教系统、示教方法、清洗装置、存储介质及维护套件
KR102690417B1 (ko) 기판 처리 시스템 및 기판 처리 방법
TWI880075B (zh) 整合式cmp系統及拋光基板的方法
CN105428275A (zh) 处理模块、处理装置及处理方法
JP6215602B2 (ja) 研磨装置および研磨状態監視方法
US6149507A (en) Wafer polishing apparatus having measurement device and polishing method
KR20150120869A (ko) 기판 처리 장치
US20200223027A1 (en) Substrate processing apparatus, and method for specifying area to be partially polished by substrate processing apparatus
CN119212826A (zh) 基板研磨装置、基板研磨方法、研磨装置及研磨方法
CN118809424A (zh) 膜厚测定装置、膜厚测定方法及基板研磨装置
KR20150061600A (ko) 통합형 시스템, 통합형 시스템의 작동 방법 및 막 처리 방법
JP6118180B2 (ja) 試験予定作成方法、試験方法、試験予定作成装置および基板処理装置
JP6992835B2 (ja) 基板処理装置、液処理方法、及び記憶媒体

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
A302 Request for accelerated examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000