TWI689373B - 研磨方法及研磨裝置 - Google Patents

研磨方法及研磨裝置 Download PDF

Info

Publication number
TWI689373B
TWI689373B TW104101917A TW104101917A TWI689373B TW I689373 B TWI689373 B TW I689373B TW 104101917 A TW104101917 A TW 104101917A TW 104101917 A TW104101917 A TW 104101917A TW I689373 B TWI689373 B TW I689373B
Authority
TW
Taiwan
Prior art keywords
polishing
substrate
film thickness
wafer
measurement
Prior art date
Application number
TW104101917A
Other languages
English (en)
Chinese (zh)
Other versions
TW201536477A (zh
Inventor
鳥越恒男
大滝裕史
Original Assignee
日商荏原製作所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商荏原製作所股份有限公司 filed Critical 日商荏原製作所股份有限公司
Publication of TW201536477A publication Critical patent/TW201536477A/zh
Application granted granted Critical
Publication of TWI689373B publication Critical patent/TWI689373B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0472—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
TW104101917A 2014-01-23 2015-01-21 研磨方法及研磨裝置 TWI689373B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-010800 2014-01-23
JP2014010800A JP6374169B2 (ja) 2014-01-23 2014-01-23 研磨方法および研磨装置

Publications (2)

Publication Number Publication Date
TW201536477A TW201536477A (zh) 2015-10-01
TWI689373B true TWI689373B (zh) 2020-04-01

Family

ID=53687476

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104101917A TWI689373B (zh) 2014-01-23 2015-01-21 研磨方法及研磨裝置

Country Status (6)

Country Link
US (1) US9524913B2 (https=)
JP (1) JP6374169B2 (https=)
KR (1) KR101998453B1 (https=)
CN (1) CN104802069B (https=)
SG (1) SG10201500455QA (https=)
TW (1) TWI689373B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9505101B1 (en) * 2015-06-24 2016-11-29 The Boeing Company Automated sanding system and method
CN111283548B (zh) * 2018-12-07 2023-07-18 株式会社迪思科 圆板状工件的加工方法
WO2020129714A1 (ja) * 2018-12-19 2020-06-25 東京エレクトロン株式会社 基板処理装置、および基板処理方法
JP7349278B2 (ja) * 2019-07-11 2023-09-22 株式会社ディスコ 加工装置
KR102721977B1 (ko) * 2019-10-07 2024-10-28 삼성전자주식회사 반도체 기판 측정 장치, 이를 이용한 반도체 기판 처리 장치 및 반도체 소자 형성 방법
JP7581374B2 (ja) * 2020-11-27 2024-11-12 東京エレクトロン株式会社 基板処理システム及び基板処理方法
CN116330162A (zh) * 2023-03-10 2023-06-27 华虹半导体(无锡)有限公司 一种cmp警报方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW376352B (en) * 1997-07-10 1999-12-11 Samsung Electronics Co Ltd Wafer polishing apparatus having measurement device and polishing method thereby
US20060063472A1 (en) * 2004-09-21 2006-03-23 Matsushita Electric Industrial Co., Ltd. Method for polishing substrate
TW201000254A (en) * 2008-05-12 2010-01-01 Ebara Corp Polishing method, polishing apparatus, and program for controlling polishing apparatus

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5885138A (en) * 1993-09-21 1999-03-23 Ebara Corporation Method and apparatus for dry-in, dry-out polishing and washing of a semiconductor device
US7097534B1 (en) * 2000-07-10 2006-08-29 Applied Materials, Inc. Closed-loop control of a chemical mechanical polisher
US6447370B1 (en) * 2001-04-17 2002-09-10 Speedfam-Ipec Corporation Inline metrology device
US6967715B2 (en) * 2002-12-06 2005-11-22 International Business Machines Corporation Method and apparatus for optical film measurements in a controlled environment
US7118451B2 (en) * 2004-02-27 2006-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. CMP apparatus and process sequence method
JP2006231471A (ja) * 2005-02-25 2006-09-07 Speedfam Co Ltd 両面ポリッシュ加工機とその定寸制御方法
ITBO20070504A1 (it) * 2007-07-20 2009-01-21 Marposs Spa Apparecchiatura e metodo per il controllo dello spessore di un elemento in lavorazione
JP2009050944A (ja) * 2007-08-24 2009-03-12 Disco Abrasive Syst Ltd 基板の厚さ測定方法および基板の加工装置
US20140141694A1 (en) * 2012-11-21 2014-05-22 Applied Materials, Inc. In-Sequence Spectrographic Sensor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW376352B (en) * 1997-07-10 1999-12-11 Samsung Electronics Co Ltd Wafer polishing apparatus having measurement device and polishing method thereby
US20060063472A1 (en) * 2004-09-21 2006-03-23 Matsushita Electric Industrial Co., Ltd. Method for polishing substrate
TW201000254A (en) * 2008-05-12 2010-01-01 Ebara Corp Polishing method, polishing apparatus, and program for controlling polishing apparatus

Also Published As

Publication number Publication date
US9524913B2 (en) 2016-12-20
KR20150088193A (ko) 2015-07-31
US20150221562A1 (en) 2015-08-06
JP6374169B2 (ja) 2018-08-15
JP2015136775A (ja) 2015-07-30
CN104802069B (zh) 2018-09-28
TW201536477A (zh) 2015-10-01
KR101998453B1 (ko) 2019-07-09
SG10201500455QA (en) 2015-08-28
CN104802069A (zh) 2015-07-29

Similar Documents

Publication Publication Date Title
TWI689373B (zh) 研磨方法及研磨裝置
TWI567813B (zh) Grinding method
CN104275642B (zh) 研磨装置及研磨状态监视方法
KR100472959B1 (ko) 언로딩구조가 개선된 반도체 웨이퍼의 표면평탄화설비
TWI632988B (zh) 膜厚測定裝置、膜厚測定方法、及具備膜厚測定裝置的研磨裝置
CN104813449B (zh) 多平台多头的研磨架构
CN112514035B (zh) 基板处理系统和基板处理方法
TW201403697A (zh) 研磨方法
JP7141204B2 (ja) 研磨装置、及び研磨方法
CN113043156B (zh) 磨削装置
CN105428275A (zh) 处理模块、处理装置及处理方法
TWI880075B (zh) 整合式ｃｍｐ系統及拋光基板的方法
JP7187119B2 (ja) 研削装置及びドレッシングボードの品種の判別方法
WO2023176611A1 (ja) 基板研磨装置、基板研磨方法、研磨装置および研磨方法
CN120184046A (zh) 基板处理装置及基板处理方法
JP2015152324A (ja) 基板処理装置、および基板のエッジ欠けを検出する方法