KR101977278B1 - 발광 소자 - Google Patents

발광 소자 Download PDF

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Publication number
KR101977278B1
KR101977278B1 KR1020120120332A KR20120120332A KR101977278B1 KR 101977278 B1 KR101977278 B1 KR 101977278B1 KR 1020120120332 A KR1020120120332 A KR 1020120120332A KR 20120120332 A KR20120120332 A KR 20120120332A KR 101977278 B1 KR101977278 B1 KR 101977278B1
Authority
KR
South Korea
Prior art keywords
bonding
electrode
phosphor plate
light emitting
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020120120332A
Other languages
English (en)
Korean (ko)
Other versions
KR20140054625A (ko
Inventor
이건교
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020120120332A priority Critical patent/KR101977278B1/ko
Priority to US13/841,271 priority patent/US9437784B2/en
Priority to JP2013206033A priority patent/JP6251534B2/ja
Priority to EP13188201.1A priority patent/EP2725630B1/en
Priority to CN201310520011.8A priority patent/CN103794705B/zh
Publication of KR20140054625A publication Critical patent/KR20140054625A/ko
Application granted granted Critical
Publication of KR101977278B1 publication Critical patent/KR101977278B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
    • F21V29/77—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical diverging planar fins or blades, e.g. with fan-like or star-like cross-section
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F21V29/83—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks the elements having apertures, ducts or channels, e.g. heat radiation holes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2101/00—Point-like light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
KR1020120120332A 2012-10-29 2012-10-29 발광 소자 Expired - Fee Related KR101977278B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020120120332A KR101977278B1 (ko) 2012-10-29 2012-10-29 발광 소자
US13/841,271 US9437784B2 (en) 2012-10-29 2013-03-15 Light emitting device
JP2013206033A JP6251534B2 (ja) 2012-10-29 2013-10-01 発光素子及び発光素子パッケージ
EP13188201.1A EP2725630B1 (en) 2012-10-29 2013-10-10 Light emitting device
CN201310520011.8A CN103794705B (zh) 2012-10-29 2013-10-29 发光设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120120332A KR101977278B1 (ko) 2012-10-29 2012-10-29 발광 소자

Publications (2)

Publication Number Publication Date
KR20140054625A KR20140054625A (ko) 2014-05-09
KR101977278B1 true KR101977278B1 (ko) 2019-09-10

Family

ID=49304854

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120120332A Expired - Fee Related KR101977278B1 (ko) 2012-10-29 2012-10-29 발광 소자

Country Status (5)

Country Link
US (1) US9437784B2 (enExample)
EP (1) EP2725630B1 (enExample)
JP (1) JP6251534B2 (enExample)
KR (1) KR101977278B1 (enExample)
CN (1) CN103794705B (enExample)

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* Cited by examiner, † Cited by third party
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KR101983774B1 (ko) * 2012-09-20 2019-05-29 엘지이노텍 주식회사 발광 소자
DE102013111503B4 (de) * 2013-10-18 2021-08-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip, optoelektronisches Bauelement und Verfahren zur Vereinzelung von Halbleiterchips
US9705035B1 (en) * 2015-12-30 2017-07-11 Epistar Corporation Light emitting device
KR102554231B1 (ko) * 2016-06-16 2023-07-12 서울바이오시스 주식회사 전극 구조를 갖는 수직형 발광 다이오드 및 그것을 갖는 발광 다이오드 패키지
DE102016112587A1 (de) * 2016-07-08 2018-01-11 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
CN117367327B (zh) * 2023-12-01 2024-03-29 上海隐冠半导体技术有限公司 一种五角棱镜垂直度检测系统及方法

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JP2006278567A (ja) 2005-03-28 2006-10-12 Matsushita Electric Works Ltd Ｌｅｄユニット
JP2007080994A (ja) 2005-09-13 2007-03-29 Sumita Optical Glass Inc 固体素子デバイス及びこれを用いた発光装置
JP2012080070A (ja) * 2010-09-30 2012-04-19 Everlight Yi-Guang Technology (Shanghai) Ltd 発光ダイオードパッケージ構造及びその製造方法

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JP2006278567A (ja) 2005-03-28 2006-10-12 Matsushita Electric Works Ltd Ｌｅｄユニット
JP2007080994A (ja) 2005-09-13 2007-03-29 Sumita Optical Glass Inc 固体素子デバイス及びこれを用いた発光装置
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Also Published As

Publication number Publication date
EP2725630A1 (en) 2014-04-30
KR20140054625A (ko) 2014-05-09
JP2014090164A (ja) 2014-05-15
CN103794705A (zh) 2014-05-14
US9437784B2 (en) 2016-09-06
EP2725630B1 (en) 2019-09-25
JP6251534B2 (ja) 2017-12-20
CN103794705B (zh) 2018-01-02
US20140117389A1 (en) 2014-05-01

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