CN103794705B - 发光设备 - Google Patents
发光设备 Download PDFInfo
- Publication number
- CN103794705B CN103794705B CN201310520011.8A CN201310520011A CN103794705B CN 103794705 B CN103794705 B CN 103794705B CN 201310520011 A CN201310520011 A CN 201310520011A CN 103794705 B CN103794705 B CN 103794705B
- Authority
- CN
- China
- Prior art keywords
- bonding
- electrode
- light emitting
- phosphor plate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
- F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
- F21V29/77—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical diverging planar fins or blades, e.g. with fan-like or star-like cross-section
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
- F21V29/83—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks the elements having apertures, ducts or channels, e.g. heat radiation holes
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2101/00—Point-like light sources
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2012-0120332 | 2012-10-29 | ||
| KR1020120120332A KR101977278B1 (ko) | 2012-10-29 | 2012-10-29 | 발광 소자 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103794705A CN103794705A (zh) | 2014-05-14 |
| CN103794705B true CN103794705B (zh) | 2018-01-02 |
Family
ID=49304854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310520011.8A Active CN103794705B (zh) | 2012-10-29 | 2013-10-29 | 发光设备 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9437784B2 (enExample) |
| EP (1) | EP2725630B1 (enExample) |
| JP (1) | JP6251534B2 (enExample) |
| KR (1) | KR101977278B1 (enExample) |
| CN (1) | CN103794705B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101983774B1 (ko) * | 2012-09-20 | 2019-05-29 | 엘지이노텍 주식회사 | 발광 소자 |
| DE102013111503B4 (de) * | 2013-10-18 | 2021-08-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip, optoelektronisches Bauelement und Verfahren zur Vereinzelung von Halbleiterchips |
| US9705035B1 (en) * | 2015-12-30 | 2017-07-11 | Epistar Corporation | Light emitting device |
| KR102554231B1 (ko) * | 2016-06-16 | 2023-07-12 | 서울바이오시스 주식회사 | 전극 구조를 갖는 수직형 발광 다이오드 및 그것을 갖는 발광 다이오드 패키지 |
| DE102016112587A1 (de) | 2016-07-08 | 2018-01-11 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
| CN117367327B (zh) * | 2023-12-01 | 2024-03-29 | 上海隐冠半导体技术有限公司 | 一种五角棱镜垂直度检测系统及方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1487605A (zh) * | 2002-09-02 | 2004-04-07 | ���µ�����ҵ��ʽ���� | 发光装置 |
| CN101228640A (zh) * | 2005-01-11 | 2008-07-23 | 美商旭明国际股份有限公司 | 白光发光二极管的制造系统与方法 |
| KR20110085168A (ko) * | 2010-01-19 | 2011-07-27 | 엘지이노텍 주식회사 | Led 패키지 및 그 제조방법 |
| CN102447046A (zh) * | 2010-09-30 | 2012-05-09 | 亿广科技(上海)有限公司 | 发光二极管封装结构及其制作方法 |
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| US6465951B1 (en) * | 1992-12-16 | 2002-10-15 | Durel Corporation | Electroluminescent lamp devices and their manufacture |
| JPH0725060A (ja) * | 1993-06-25 | 1995-01-27 | Matsushita Electric Ind Co Ltd | 光プリントヘッドおよびその製造方法 |
| WO2001009963A1 (en) | 1999-07-29 | 2001-02-08 | Citizen Electronics Co., Ltd. | Light-emitting diode |
| JP2002076434A (ja) * | 2000-08-28 | 2002-03-15 | Toyoda Gosei Co Ltd | 発光装置 |
| JP3782411B2 (ja) * | 2002-09-02 | 2006-06-07 | 松下電器産業株式会社 | 発光装置 |
| JP4991026B2 (ja) * | 2003-02-26 | 2012-08-01 | 日亜化学工業株式会社 | 発光装置 |
| US20130240834A1 (en) * | 2005-01-11 | 2013-09-19 | SemiLEDs Optoelectronics Co., Ltd. | Method for fabricating vertical light emitting diode (vled) dice with wavelength conversion layers |
| JP2006278567A (ja) | 2005-03-28 | 2006-10-12 | Matsushita Electric Works Ltd | Ledユニット |
| KR20080048492A (ko) * | 2005-08-24 | 2008-06-02 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 컬러 변환기를 갖는 발광 다이오드 및 레이저 다이오드 |
| JP2007067326A (ja) | 2005-09-02 | 2007-03-15 | Shinko Electric Ind Co Ltd | 発光ダイオード及びその製造方法 |
| JP5219331B2 (ja) | 2005-09-13 | 2013-06-26 | 株式会社住田光学ガラス | 固体素子デバイスの製造方法 |
| US9024349B2 (en) * | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| US9401461B2 (en) * | 2007-07-11 | 2016-07-26 | Cree, Inc. | LED chip design for white conversion |
| US20090140279A1 (en) * | 2007-12-03 | 2009-06-04 | Goldeneye, Inc. | Substrate-free light emitting diode chip |
| WO2009141960A1 (en) * | 2008-05-20 | 2009-11-26 | Panasonic Corporation | Semiconductor light-emitting device as well as light source device and lighting system including the same |
| EP2357679B1 (en) * | 2008-11-14 | 2018-08-29 | Samsung Electronics Co., Ltd. | Vertical/horizontal light-emitting diode for semiconductor |
| US7875984B2 (en) * | 2009-03-04 | 2011-01-25 | Koninklijke Philips Electronics N.V. | Complaint bonding structures for semiconductor devices |
| US8597963B2 (en) * | 2009-05-19 | 2013-12-03 | Intematix Corporation | Manufacture of light emitting devices with phosphor wavelength conversion |
| WO2011083923A2 (en) * | 2010-01-07 | 2011-07-14 | Seoul Opto Device Co., Ltd. | Light emitting diode having electrode pads |
| KR101644501B1 (ko) | 2010-01-18 | 2016-08-01 | 엘지이노텍 주식회사 | 발광소자, 발광 소자 패키지 및 조명장치 |
| KR101020995B1 (ko) * | 2010-02-18 | 2011-03-09 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
| KR101014102B1 (ko) * | 2010-04-06 | 2011-02-10 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| JP5786278B2 (ja) * | 2010-04-07 | 2015-09-30 | 日亜化学工業株式会社 | 発光装置 |
| TWI476959B (zh) * | 2010-04-11 | 2015-03-11 | 邱羅利士公司 | 轉移均勻螢光層至一物件上之方法及所製得之發光結構 |
| WO2011145794A1 (ko) * | 2010-05-18 | 2011-11-24 | 서울반도체 주식회사 | 파장변환층을 갖는 발광 다이오드 칩과 그 제조 방법, 및 그것을 포함하는 패키지 및 그 제조 방법 |
| KR101798232B1 (ko) | 2010-07-07 | 2017-11-15 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 발광 시스템 |
| JP2012028381A (ja) * | 2010-07-20 | 2012-02-09 | Sharp Corp | 半導体発光素子およびその製造方法 |
| US10546846B2 (en) * | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
| DE102010045403A1 (de) | 2010-09-15 | 2012-03-15 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| KR101707532B1 (ko) | 2010-10-29 | 2017-02-16 | 엘지이노텍 주식회사 | 발광 소자 |
| TWI493756B (zh) * | 2010-11-15 | 2015-07-21 | Epistar Corp | 發光元件 |
| US8987772B2 (en) * | 2010-11-18 | 2015-03-24 | Seoul Viosys Co., Ltd. | Light emitting diode chip having electrode pad |
| JP5820295B2 (ja) * | 2011-02-21 | 2015-11-24 | 株式会社半導体エネルギー研究所 | 照明装置 |
| EP2503606B1 (en) * | 2011-03-25 | 2020-02-26 | Samsung Electronics Co., Ltd. | Light Emitting Diode, Manufacturing Method Thereof, Light Emitting Diode Module, and Manufacturing Method Thereof |
| US20140048824A1 (en) * | 2012-08-15 | 2014-02-20 | Epistar Corporation | Light-emitting device |
| KR101983774B1 (ko) * | 2012-09-20 | 2019-05-29 | 엘지이노텍 주식회사 | 발광 소자 |
-
2012
- 2012-10-29 KR KR1020120120332A patent/KR101977278B1/ko active Active
-
2013
- 2013-03-15 US US13/841,271 patent/US9437784B2/en active Active
- 2013-10-01 JP JP2013206033A patent/JP6251534B2/ja not_active Expired - Fee Related
- 2013-10-10 EP EP13188201.1A patent/EP2725630B1/en not_active Not-in-force
- 2013-10-29 CN CN201310520011.8A patent/CN103794705B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1487605A (zh) * | 2002-09-02 | 2004-04-07 | ���µ�����ҵ��ʽ���� | 发光装置 |
| CN101228640A (zh) * | 2005-01-11 | 2008-07-23 | 美商旭明国际股份有限公司 | 白光发光二极管的制造系统与方法 |
| KR20110085168A (ko) * | 2010-01-19 | 2011-07-27 | 엘지이노텍 주식회사 | Led 패키지 및 그 제조방법 |
| CN102447046A (zh) * | 2010-09-30 | 2012-05-09 | 亿广科技(上海)有限公司 | 发光二极管封装结构及其制作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US9437784B2 (en) | 2016-09-06 |
| KR101977278B1 (ko) | 2019-09-10 |
| KR20140054625A (ko) | 2014-05-09 |
| JP2014090164A (ja) | 2014-05-15 |
| JP6251534B2 (ja) | 2017-12-20 |
| EP2725630A1 (en) | 2014-04-30 |
| US20140117389A1 (en) | 2014-05-01 |
| EP2725630B1 (en) | 2019-09-25 |
| CN103794705A (zh) | 2014-05-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210816 Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province Patentee after: Suzhou Leyu Semiconductor Co.,Ltd. Address before: Seoul, South Kerean Patentee before: LG INNOTEK Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP03 | Change of name, title or address |
Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province Patentee after: Suzhou Liyu Semiconductor Co.,Ltd. Country or region after: China Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province Patentee before: Suzhou Leyu Semiconductor Co.,Ltd. Country or region before: China |
|
| CP03 | Change of name, title or address |