JP6251534B2 - 発光素子及び発光素子パッケージ - Google Patents
発光素子及び発光素子パッケージ Download PDFInfo
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- JP6251534B2 JP6251534B2 JP2013206033A JP2013206033A JP6251534B2 JP 6251534 B2 JP6251534 B2 JP 6251534B2 JP 2013206033 A JP2013206033 A JP 2013206033A JP 2013206033 A JP2013206033 A JP 2013206033A JP 6251534 B2 JP6251534 B2 JP 6251534B2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 154
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
- F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
- F21V29/77—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical diverging planar fins or blades, e.g. with fan-like or star-like cross-section
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
- F21V29/83—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks the elements having apertures, ducts or channels, e.g. heat radiation holes
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2101/00—Point-like light sources
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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Description
Claims (17)
- 第1半導体層、活性層、及び第2半導体層を含む発光構造物と、
前記発光構造物上に配置される蛍光体プレートと、
前記蛍光体プレートの上面上に配置されるパッド部を含み、一部が前記蛍光体プレートを貫通して前記蛍光体プレートの下面に露出する第2電極と、
前記第2半導体層上に配置され、前記第2電極の一部を構成し、前記パッド部から拡張される拡張電極と、
前記蛍光体プレートの下面と前記拡張電極の上面との間に配置される少なくとも一つの第3ボンディング電極と、
前記蛍光体プレートと前記発光構造物との間に配置される少なくとも一つの第2ボンディング部とを含み、
前記少なくとも一つの第3ボンディング電極は、前記蛍光体プレートを貫通する前記第2電極の一部と接触し、
前記少なくとも一つの第2ボンディング部の上面は、前記蛍光体プレートの下面に接触し、前記第2電極から離隔する、発光素子。 - 前記第2電極は、
前記蛍光体プレートを通過し、前記パッド部と前記拡張電極とを連結する連結部を含み、
前記少なくとも一つの第2ボンディング部は前記連結部から離隔する、請求項1に記載の発光素子。 - 前記第2ボンディング部は、
前記蛍光体プレートの下面上に配置される第1ボンディング層と、
前記発光構造物上に配置され、前記第1ボンディング層にボンディングされる第2ボンディング層とを含む、請求項2に記載の発光素子。 - 前記少なくとも一つの第3ボンディング電極は、
前記連結部と前記拡張電極との間に位置し、前記連結部を前記拡張電極にボンディングさせる、請求項2又は3に記載の発光素子。 - 前記第2ボンディング層は前記第1ボンディング層に融着される、請求項3に記載の発光素子。
- 前記第1ボンディング層と前記第2ボンディング層との間には、融着された境界面が存在する、請求項5に記載の発光素子。
- 前記第2ボンディング層の融点と前記第1ボンディング層の融点は互いに異なる、請求項5又は6に記載の発光素子。
- 前記第3ボンディング電極は複数個であり、該複数個の第3ボンディング電極は、前記拡張電極に整列され、互いに離隔し、
前記複数個の第3ボンディング電極のいずれか一つは前記連結部と接触する、請求項4に記載の発光素子。 - 前記第3ボンディング電極の融点は、前記拡張電極の融点と互いに異なる、請求項8に記載の発光素子。
- 前記第3ボンディング電極は前記拡張電極に融着される、請求項8又は9に記載の発光素子。
- 前記第3ボンディング電極と前記拡張電極との間には、融着された境界面が存在する、請求項8ないし10のいずれかに記載の発光素子。
- 前記第3ボンディング電極とボンディングされる前記拡張電極の一部分は、前記拡張電極の残りの部分と幅が互いに異なる、請求項8ないし11のいずれかに記載の発光素子。
- 前記第3ボンディング電極の幅は、前記拡張電極の幅よりも小さいか又は同一である、請求項8ないし12のいずれかに記載の発光素子。
- 前記蛍光体プレートと前記発光構造物との間にはエアギャップ(air gap)が存在する、請求項1に記載の発光素子。
- 前記パッド部は前記蛍光体プレートの一側に位置する、請求項2に記載の発光素子。
- 前記拡張電極は、
前記第3ボンディング電極がボンディングされるボンディング領域と、
前記ボンディング領域から拡張される枝電極とを含む、請求項8に記載の発光素子。 - パッケージボディーと、
前記パッケージボディーに配置される第1リードフレーム及び第2リードフレームと、
前記第2リードフレーム上に配置され、請求項1乃至16のいずれかに記載の発光素子と、
前記発光素子を包囲する樹脂層と、を含む、発光素子パッケージ。
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