KR101968798B1 - 진공 증착 장치 - Google Patents

진공 증착 장치 Download PDF

Info

Publication number
KR101968798B1
KR101968798B1 KR1020150131559A KR20150131559A KR101968798B1 KR 101968798 B1 KR101968798 B1 KR 101968798B1 KR 1020150131559 A KR1020150131559 A KR 1020150131559A KR 20150131559 A KR20150131559 A KR 20150131559A KR 101968798 B1 KR101968798 B1 KR 101968798B1
Authority
KR
South Korea
Prior art keywords
film
organic material
film thickness
crystal
evaporation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020150131559A
Other languages
English (en)
Korean (ko)
Other versions
KR20160038746A (ko
Inventor
히로유키 다무라
Original Assignee
캐논 톡키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 톡키 가부시키가이샤 filed Critical 캐논 톡키 가부시키가이샤
Publication of KR20160038746A publication Critical patent/KR20160038746A/ko
Application granted granted Critical
Publication of KR101968798B1 publication Critical patent/KR101968798B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L51/56
    • H01L21/203
    • H01L51/001
    • H01L2251/56

Landscapes

  • Physical Vapour Deposition (AREA)
  • Length Measuring Devices Characterised By Use Of Acoustic Means (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020150131559A 2014-09-30 2015-09-17 진공 증착 장치 Active KR101968798B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-200860 2014-09-30
JP2014200860A JP6448279B2 (ja) 2014-09-30 2014-09-30 真空蒸着装置

Publications (2)

Publication Number Publication Date
KR20160038746A KR20160038746A (ko) 2016-04-07
KR101968798B1 true KR101968798B1 (ko) 2019-04-12

Family

ID=55601530

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150131559A Active KR101968798B1 (ko) 2014-09-30 2015-09-17 진공 증착 장치

Country Status (4)

Country Link
JP (1) JP6448279B2 (enExample)
KR (1) KR101968798B1 (enExample)
CN (1) CN105463377B (enExample)
TW (1) TWI681066B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180067463A (ko) * 2016-10-25 2018-06-20 어플라이드 머티어리얼스, 인코포레이티드 증착 레이트를 측정하기 위한 측정 조립체, 증발 소스, 증착 장치, 및 이를 위한 방법
US10763143B2 (en) * 2017-08-18 2020-09-01 Applied Materials, Inc. Processing tool having a monitoring device
KR101870581B1 (ko) * 2017-09-29 2018-06-22 캐논 톡키 가부시키가이샤 수정진동자의 수명 판정방법, 막두께 측정장치, 성막방법, 성막장치, 및 전자 디바이스 제조방법
JP7301578B2 (ja) * 2019-03-29 2023-07-03 キヤノントッキ株式会社 成膜装置及び成膜方法
CN109930112A (zh) * 2019-04-15 2019-06-25 湖畔光电科技(江苏)有限公司 一种蒸镀腔体结构
TWI701641B (zh) * 2019-10-01 2020-08-11 龍翩真空科技股份有限公司 無線傳輸薄膜厚度監控裝置
KR102615500B1 (ko) * 2019-10-21 2023-12-19 가부시키가이샤 아루박 막 형성장치
CN111829428B (zh) * 2020-06-17 2022-02-15 华中科技大学 一种双石英晶振膜厚控制仪及误差校正方法
KR20220011924A (ko) * 2020-07-22 2022-02-03 주식회사 엘지화학 실리콘계 코팅 조성물 및 이를 포함하는 실리콘계 이형필름
JP2023072407A (ja) * 2021-11-12 2023-05-24 キヤノントッキ株式会社 成膜量測定装置、成膜装置、成膜量測定方法、成膜方法、及び電子デバイスの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005325400A (ja) * 2004-05-13 2005-11-24 Seiko Epson Corp 真空蒸着装置及び薄膜形成方法
JP2014065942A (ja) * 2012-09-26 2014-04-17 Hitachi High-Technologies Corp 真空蒸着装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4233644B2 (ja) 1998-09-22 2009-03-04 株式会社アルバック 膜厚モニター用水晶振動子
KR20120023273A (ko) * 2010-09-01 2012-03-13 (주)알파플러스 셔터를 이용하는 진공증착막의 두께 모니터링 방법 및 이 방법을 채용하는 진공증착장치
JP5854731B2 (ja) * 2010-11-04 2016-02-09 キヤノン株式会社 成膜装置及びこれを用いた成膜方法
TW201337013A (zh) * 2012-03-12 2013-09-16 Hitachi High Tech Corp 蒸發源裝置及真空蒸鍍裝置及有機el顯示裝置之製造方法
JP2014070238A (ja) * 2012-09-28 2014-04-21 Hitachi High-Technologies Corp 真空蒸着装置及びその蒸着方法
CN103469172B (zh) * 2013-08-31 2015-08-05 上海膜林科技有限公司 石英晶体镀膜厚度控制方法及石英晶体镀膜装置
JP6223275B2 (ja) * 2014-05-15 2017-11-01 キヤノントッキ株式会社 水晶発振式膜厚計

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005325400A (ja) * 2004-05-13 2005-11-24 Seiko Epson Corp 真空蒸着装置及び薄膜形成方法
JP2014065942A (ja) * 2012-09-26 2014-04-17 Hitachi High-Technologies Corp 真空蒸着装置

Also Published As

Publication number Publication date
JP6448279B2 (ja) 2019-01-09
CN105463377B (zh) 2019-08-23
TW201627514A (zh) 2016-08-01
TWI681066B (zh) 2020-01-01
CN105463377A (zh) 2016-04-06
JP2016069694A (ja) 2016-05-09
KR20160038746A (ko) 2016-04-07

Similar Documents

Publication Publication Date Title
KR101968798B1 (ko) 진공 증착 장치
KR101918805B1 (ko) 수정 발진식 막두께 계기
TWI485281B (zh) 成膜裝置
JP6641649B2 (ja) 水晶振動子の寿命判定方法、膜厚測定装置、成膜方法、成膜装置、及び電子デバイス製造方法
KR101781073B1 (ko) 성막 장치 및 성막 방법
KR102008046B1 (ko) 수정 발진식 막두께 모니터에 의한 막두께 제어 방법
JP2014062310A (ja) 膜厚センサ並びにそれを用いた真空蒸着装置及び真空蒸着方法
US10818481B2 (en) Smart device fabrication via precision patterning
CN103305796A (zh) 蒸发源装置及真空蒸镀装置、以及有机el显示装置的制造方法
TWI433946B (zh) 成膜裝置和成膜方法
JPWO2010038631A1 (ja) 蒸着装置、蒸着方法およびプログラムを記憶した記憶媒体
JP2015069859A (ja) 有機el製造装置及び有機el製造方法
JP2013167007A (ja) 多元蒸着装置
KR102193817B1 (ko) 박막 제조 장치, 박막 제조 방법
JP2016027636A (ja) サセプタ
JP2014055335A (ja) 真空成膜装置とその蒸発源の温度制御方法及び装置
JP2013139637A (ja) 連続薄膜蒸着装置
CN111378945A (zh) 成膜装置、成膜方法以及电子器件的制造方法
CN111378939A (zh) 成膜装置、成膜方法以及电子器件的制造方法
US20110014394A1 (en) film depositing apparatus and method
KR100729096B1 (ko) 유기물 증발 증착방법 및 이를 위한 유기 증발 증착 장치
KR20240079446A (ko) 증착원 시스템, 이를 이용한 증착율 제어 방법 및 이를 포함한 박막 증착 장비
CN111378944A (zh) 成膜装置、成膜方法以及电子器件的制造方法
KR20080060429A (ko) 증착 장치
JP2009197333A (ja) 酸化亜鉛薄膜

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000