KR101966635B1 - 반도체 기판용 세정제 및 반도체 기판 표면의 처리방법 - Google Patents

반도체 기판용 세정제 및 반도체 기판 표면의 처리방법 Download PDF

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Publication number
KR101966635B1
KR101966635B1 KR1020147029843A KR20147029843A KR101966635B1 KR 101966635 B1 KR101966635 B1 KR 101966635B1 KR 1020147029843 A KR1020147029843 A KR 1020147029843A KR 20147029843 A KR20147029843 A KR 20147029843A KR 101966635 B1 KR101966635 B1 KR 101966635B1
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South Korea
Prior art keywords
group
cleaning agent
general formula
propanediol
semiconductor substrate
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KR1020147029843A
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English (en)
Korean (ko)
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KR20150003217A (ko
Inventor
히로미 가와다
히로노리 미즈타
츠네아키 마에사와
Original Assignee
후지 필름 일렉트로닉 머트리얼즈 가부시키가이샤
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Publication of KR20150003217A publication Critical patent/KR20150003217A/ko
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/0206Cleaning during device manufacture during, before or after processing of insulating layers
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3218Alkanolamines or alkanolimines
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/36Organic compounds containing phosphorus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684Smoothing; Planarisation
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
KR1020147029843A 2012-04-27 2013-04-26 반도체 기판용 세정제 및 반도체 기판 표면의 처리방법 KR101966635B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012103921 2012-04-27
JPJP-P-2012-103921 2012-04-27
PCT/JP2013/062464 WO2013162020A1 (fr) 2012-04-27 2013-04-26 Agent de nettoyage pour des substrats semi-conducteurs et procédé de traitement de surface de substrat semi-conducteur

Publications (2)

Publication Number Publication Date
KR20150003217A KR20150003217A (ko) 2015-01-08
KR101966635B1 true KR101966635B1 (ko) 2019-08-27

Family

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Family Applications (1)

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KR1020147029843A KR101966635B1 (ko) 2012-04-27 2013-04-26 반도체 기판용 세정제 및 반도체 기판 표면의 처리방법

Country Status (8)

Country Link
US (1) US9803161B2 (fr)
EP (1) EP2843689A4 (fr)
JP (1) JP6128118B2 (fr)
KR (1) KR101966635B1 (fr)
CN (1) CN104254906B (fr)
SG (2) SG10201608964TA (fr)
TW (1) TWI589691B (fr)
WO (1) WO2013162020A1 (fr)

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JP2015189829A (ja) * 2014-03-27 2015-11-02 株式会社フジミインコーポレーテッド 研磨用組成物
JP6373029B2 (ja) * 2014-03-27 2018-08-15 株式会社フジミインコーポレーテッド 研磨用組成物
JP6343160B2 (ja) * 2014-03-28 2018-06-13 株式会社フジミインコーポレーテッド 研磨用組成物
KR102360224B1 (ko) * 2015-02-16 2022-03-14 삼성디스플레이 주식회사 세정용 조성물
US10507563B2 (en) 2015-04-22 2019-12-17 Jsr Corporation Treatment composition for chemical mechanical polishing, chemical mechanical polishing method, and cleaning method
KR101654900B1 (ko) * 2016-02-04 2016-09-07 주식회사 한국루베 저독성 화생방 제독제
KR102341136B1 (ko) * 2016-07-26 2021-12-21 가부시키가이샤 후지미인코퍼레이티드 표면 처리 조성물 및 이것을 사용한 표면 처리 방법
CN106283092B (zh) * 2016-08-05 2018-06-19 宁波金特信钢铁科技有限公司 一种无氨氟化物盐电子基板清洗组合物的制备方法
JP6791680B2 (ja) * 2016-08-09 2020-11-25 株式会社フジミインコーポレーテッド 表面処理組成物およびこれを用いた洗浄方法
JP6697362B2 (ja) * 2016-09-23 2020-05-20 株式会社フジミインコーポレーテッド 表面処理組成物、ならびにこれを用いた表面処理方法および半導体基板の製造方法
JP7122258B2 (ja) * 2017-01-17 2022-08-19 株式会社ダイセル 半導体基板洗浄剤
JP7140745B2 (ja) * 2017-03-08 2022-09-21 株式会社フジミインコーポレーテッド 表面処理組成物及びその製造方法、表面処理方法、並びに半導体基板の製造方法
KR102460770B1 (ko) 2017-03-17 2022-10-28 미쯔비시 케미컬 주식회사 반도체 디바이스용 기판의 세정제 조성물, 반도체 디바이스용 기판의 세정 방법, 반도체 디바이스용 기판의 제조 방법 및 반도체 디바이스용 기판
JP7028592B2 (ja) 2017-09-19 2022-03-02 株式会社フジミインコーポレーテッド 表面処理組成物、表面処理組成物の製造方法、表面処理方法、および半導体基板の製造方法
JP6849564B2 (ja) 2017-09-19 2021-03-24 株式会社フジミインコーポレーテッド 表面処理組成物およびこれを用いた表面処理方法
US11060051B2 (en) 2018-10-12 2021-07-13 Fujimi Incorporated Composition for rinsing or cleaning a surface with ceria particles adhered
CN110394694A (zh) * 2019-07-26 2019-11-01 浙江天马轴承集团有限公司 一种等离子尖端放电除毛刺加工方法
WO2021131453A1 (fr) * 2019-12-26 2021-07-01 富士フイルムエレクトロニクスマテリアルズ株式会社 Liquide de nettoyage, et procédé de nettoyage
WO2021210308A1 (fr) * 2020-04-16 2021-10-21 富士フイルムエレクトロニクスマテリアルズ株式会社 Fluide de nettoyage et procédé de nettoyage
CN113862088B (zh) * 2021-10-27 2023-11-10 福建省佑达环保材料有限公司 一种oled用掩膜版清洗剂
WO2023182142A1 (fr) * 2022-03-25 2023-09-28 富士フイルム株式会社 Composition, procédé de fabrication d'élément semi-conducteur et procédé de lavage de substrat semi-conducteur

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JP2002299300A (ja) 2001-03-30 2002-10-11 Kaijo Corp 基板処理方法
WO2006129538A1 (fr) 2005-06-01 2006-12-07 Nissan Chemical Industries, Ltd. Composition de nettoyage de galette semi-conductrice contenant de l'acide phosphonique et procede de nettoyage
JP2009239206A (ja) 2008-03-28 2009-10-15 Sanyo Chem Ind Ltd 銅配線半導体用洗浄剤
JP2010258014A (ja) 2009-04-21 2010-11-11 Jsr Corp 洗浄用組成物および洗浄方法
US20110098205A1 (en) 2009-10-24 2011-04-28 Wai Mun Lee Composition and method for cleaning semiconductor substrates

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Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6395693B1 (en) 1999-09-27 2002-05-28 Cabot Microelectronics Corporation Cleaning solution for semiconductor surfaces following chemical-mechanical polishing
JP2002299300A (ja) 2001-03-30 2002-10-11 Kaijo Corp 基板処理方法
WO2006129538A1 (fr) 2005-06-01 2006-12-07 Nissan Chemical Industries, Ltd. Composition de nettoyage de galette semi-conductrice contenant de l'acide phosphonique et procede de nettoyage
JP2009239206A (ja) 2008-03-28 2009-10-15 Sanyo Chem Ind Ltd 銅配線半導体用洗浄剤
JP2010258014A (ja) 2009-04-21 2010-11-11 Jsr Corp 洗浄用組成物および洗浄方法
US20110098205A1 (en) 2009-10-24 2011-04-28 Wai Mun Lee Composition and method for cleaning semiconductor substrates

Also Published As

Publication number Publication date
EP2843689A4 (fr) 2015-05-13
WO2013162020A1 (fr) 2013-10-31
CN104254906A (zh) 2014-12-31
JP6128118B2 (ja) 2017-05-17
EP2843689A1 (fr) 2015-03-04
US9803161B2 (en) 2017-10-31
JPWO2013162020A1 (ja) 2015-12-24
KR20150003217A (ko) 2015-01-08
SG10201608964TA (en) 2016-12-29
SG11201406961PA (en) 2014-11-27
TW201402806A (zh) 2014-01-16
TWI589691B (zh) 2017-07-01
CN104254906B (zh) 2017-07-21
US20150140820A1 (en) 2015-05-21

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