KR101953268B1 - 발광 소자의 제조 장치 및 그 제조 방법 - Google Patents

발광 소자의 제조 장치 및 그 제조 방법 Download PDF

Info

Publication number
KR101953268B1
KR101953268B1 KR1020170082506A KR20170082506A KR101953268B1 KR 101953268 B1 KR101953268 B1 KR 101953268B1 KR 1020170082506 A KR1020170082506 A KR 1020170082506A KR 20170082506 A KR20170082506 A KR 20170082506A KR 101953268 B1 KR101953268 B1 KR 101953268B1
Authority
KR
South Korea
Prior art keywords
substrate
chamber
processed
conveyance
moving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020170082506A
Other languages
English (en)
Korean (ko)
Other versions
KR20180016253A (ko
Inventor
다까아끼 이시까와
다까아끼 가미무라
노리유끼 히라따
Original Assignee
가부시키가이샤 재팬 디스프레이
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 재팬 디스프레이 filed Critical 가부시키가이샤 재팬 디스프레이
Publication of KR20180016253A publication Critical patent/KR20180016253A/ko
Application granted granted Critical
Publication of KR101953268B1 publication Critical patent/KR101953268B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L51/56—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
    • H01L51/0001—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020170082506A 2016-08-04 2017-06-29 발광 소자의 제조 장치 및 그 제조 방법 Active KR101953268B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2016-153361 2016-08-04
JP2016153361A JP6830772B2 (ja) 2016-08-04 2016-08-04 積層膜の製造装置、及び積層膜の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020190021103A Division KR102039090B1 (ko) 2016-08-04 2019-02-22 발광 소자의 제조 방법

Publications (2)

Publication Number Publication Date
KR20180016253A KR20180016253A (ko) 2018-02-14
KR101953268B1 true KR101953268B1 (ko) 2019-02-28

Family

ID=61070200

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020170082506A Active KR101953268B1 (ko) 2016-08-04 2017-06-29 발광 소자의 제조 장치 및 그 제조 방법
KR1020190021103A Active KR102039090B1 (ko) 2016-08-04 2019-02-22 발광 소자의 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020190021103A Active KR102039090B1 (ko) 2016-08-04 2019-02-22 발광 소자의 제조 방법

Country Status (5)

Country Link
US (3) US10164218B2 (enExample)
JP (1) JP6830772B2 (enExample)
KR (2) KR101953268B1 (enExample)
CN (2) CN107689429A (enExample)
TW (1) TWI671918B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6830772B2 (ja) * 2016-08-04 2021-02-17 株式会社ジャパンディスプレイ 積層膜の製造装置、及び積層膜の製造方法
WO2019170252A1 (en) * 2018-03-09 2019-09-12 Applied Materials, Inc. Vacuum processing system and method of operating a vacuum processing system
KR20200002242A (ko) * 2018-06-29 2020-01-08 캐논 톡키 가부시키가이샤 성막 장치, 유기 디바이스의 제조 장치, 및 유기 디바이스의 제조 방법
JP7240980B2 (ja) * 2019-07-29 2023-03-16 東京エレクトロン株式会社 基板処理装置及び基板搬送方法
TWI867219B (zh) * 2020-05-12 2024-12-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 半導體處理系統
WO2022137022A1 (ja) * 2020-12-25 2022-06-30 株式会社半導体エネルギー研究所 表示装置の製造装置
US20240266195A1 (en) * 2021-07-16 2024-08-08 Semiconductor Energy Laboratory Co., Ltd. Equipment For Manufacturing Light-Emitting Device
JP7747470B2 (ja) * 2021-09-06 2025-10-01 キヤノントッキ株式会社 成膜装置、基板搬送装置、基板搬送方法及び電子デバイスの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004288463A (ja) * 2003-03-20 2004-10-14 Semiconductor Energy Lab Co Ltd 製造装置
JP2009224231A (ja) * 2008-03-17 2009-10-01 Ulvac Japan Ltd 有機ｅｌ製造装置及び有機ｅｌ製造方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211762A (ja) * 1994-01-13 1995-08-11 Hitachi Ltd ウエハ搬送処理装置
JPH07230942A (ja) * 1994-02-18 1995-08-29 Hitachi Ltd マルチチャンバシステム及びその制御方法
JPH08181184A (ja) * 1994-12-22 1996-07-12 Hitachi Ltd 半導体製造ラインの構成方法
TW442891B (en) * 1998-11-17 2001-06-23 Tokyo Electron Ltd Vacuum processing system
JP3806802B2 (ja) * 2001-04-25 2006-08-09 株式会社アイテック ロボットハンドの駆動装置
US6852194B2 (en) * 2001-05-21 2005-02-08 Tokyo Electron Limited Processing apparatus, transferring apparatus and transferring method
JP4078813B2 (ja) * 2001-06-12 2008-04-23 ソニー株式会社 成膜装置および成膜方法
JP4096353B2 (ja) * 2002-05-09 2008-06-04 ソニー株式会社 有機電界発光表示素子の製造装置および製造方法
US7988398B2 (en) * 2002-07-22 2011-08-02 Brooks Automation, Inc. Linear substrate transport apparatus
CN2587883Y (zh) * 2002-12-19 2003-11-26 铼宝科技股份有限公司 有机发光组件的沉积设备
US20050111956A1 (en) * 2003-11-10 2005-05-26 Blueshift Technologies, Inc. Methods and systems for reducing the effect of vibration in a vacuum-based semiconductor handling system
US8313277B2 (en) * 2003-11-10 2012-11-20 Brooks Automation, Inc. Semiconductor manufacturing process modules
JP5128918B2 (ja) * 2007-11-30 2013-01-23 株式会社Ｓｏｋｕｄｏ 基板処理装置
KR20100132517A (ko) * 2008-03-05 2010-12-17 어플라이드 머티어리얼스, 인코포레이티드 회전 모듈을 갖는 코팅 장치
US9353436B2 (en) * 2008-03-05 2016-05-31 Applied Materials, Inc. Coating apparatus with rotation module
TW201408133A (zh) * 2008-09-04 2014-02-16 Hitachi High Tech Corp 有機電激發光裝置製造裝置及其製造方法以及成膜裝置及成膜方法
CN101667630A (zh) * 2008-09-04 2010-03-10 株式会社日立高新技术 有机el设备制造装置和其制造方法以及成膜装置和成膜方法
CN102668031A (zh) * 2009-10-28 2012-09-12 应用材料公司 用于等离子体增强化学气相沉积的腔室
EP2489759B1 (en) * 2011-02-21 2014-12-10 Applied Materials, Inc. System for utilization improvement of process chambers and method of operating thereof
WO2013077322A1 (ja) * 2011-11-23 2013-05-30 日本電産サンキョー株式会社 ワーク搬送システム
WO2013090181A1 (en) * 2011-12-12 2013-06-20 Applied Materials, Inc Fully-independent robot systems, apparatus, and methods adapted to transport multiple substrates in electronic device manufacturing
KR20130074307A (ko) * 2011-12-26 2013-07-04 엘아이지에이디피 주식회사 척킹 및 디척킹 장치부를 갖는 유기발광소자 양산 시스템
JP6079200B2 (ja) * 2012-05-16 2017-02-15 東京エレクトロン株式会社 クーリング機構及び処理システム
KR20140050994A (ko) * 2012-10-22 2014-04-30 삼성디스플레이 주식회사 유기 발광 디스플레이 장치 및 그 제조 방법
KR101990555B1 (ko) * 2012-12-24 2019-06-19 삼성디스플레이 주식회사 박막봉지 제조장치 및 박막봉지 제조방법
JP2015007263A (ja) * 2013-06-24 2015-01-15 株式会社日立ハイテクノロジーズ 有機デバイス製造装置および有機デバイスの製造方法
KR20160087953A (ko) * 2015-01-14 2016-07-25 에스엔유 프리시젼 주식회사 유기발광소자 제조용 클러스터 타입 증착장치
JP6937549B2 (ja) * 2016-06-10 2021-09-22 株式会社ジャパンディスプレイ 発光素子の製造装置
JP6830772B2 (ja) * 2016-08-04 2021-02-17 株式会社ジャパンディスプレイ 積層膜の製造装置、及び積層膜の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004288463A (ja) * 2003-03-20 2004-10-14 Semiconductor Energy Lab Co Ltd 製造装置
JP2009224231A (ja) * 2008-03-17 2009-10-01 Ulvac Japan Ltd 有機ｅｌ製造装置及び有機ｅｌ製造方法

Also Published As

Publication number Publication date
CN111463365B (zh) 2023-05-26
TWI671918B (zh) 2019-09-11
JP2018022619A (ja) 2018-02-08
KR102039090B1 (ko) 2019-11-01
US20190305259A1 (en) 2019-10-03
CN111463365A (zh) 2020-07-28
KR20180016253A (ko) 2018-02-14
US10367174B2 (en) 2019-07-30
CN107689429A (zh) 2018-02-13
US20190051867A1 (en) 2019-02-14
US10164218B2 (en) 2018-12-25
JP6830772B2 (ja) 2021-02-17
TW201806178A (zh) 2018-02-16
US20180040856A1 (en) 2018-02-08
KR20190022594A (ko) 2019-03-06

Similar Documents

Publication Publication Date Title
KR102039090B1 (ko) 발광 소자의 제조 방법
KR102059069B1 (ko) 발광 소자의 제조 장치
US8802488B2 (en) Substrate depositing system and depositing method using the same
JP5173699B2 (ja) 有機ｅｌデバイス製造装置
CN102938447A (zh) 有机el设备制造装置
KR101409808B1 (ko) 기판처리시스템
KR102481920B1 (ko) 처리체 수납 장치와, 이를 포함하는 성막 장치
CN102479927B (zh) 基板处理系统
KR101225212B1 (ko) Ｏｌｅｄ제조장치 및 방법
KR101225213B1 (ko) Ｏｌｅｄ봉지장치 및 방법
KR101175988B1 (ko) 기판처리장치 및 방법
WO2011040538A1 (ja) 基板処理システム
KR20210129495A (ko) 클러스터 증착 시스템
JP2009218384A (ja) 基板処理装置および有機エレクトロルミネッセンス装置の製造方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301