WO2019170252A1 - Vacuum processing system and method of operating a vacuum processing system - Google Patents

Vacuum processing system and method of operating a vacuum processing system Download PDF

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Publication number
WO2019170252A1
WO2019170252A1 PCT/EP2018/055925 EP2018055925W WO2019170252A1 WO 2019170252 A1 WO2019170252 A1 WO 2019170252A1 EP 2018055925 W EP2018055925 W EP 2018055925W WO 2019170252 A1 WO2019170252 A1 WO 2019170252A1
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WIPO (PCT)
Prior art keywords
chamber
substrate
vacuum
processing system
cluster
Prior art date
Application number
PCT/EP2018/055925
Other languages
French (fr)
Inventor
Sebastian Gunther ZANG
Jürgen Henrich
Andreas Sauer
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to JP2019504904A priority Critical patent/JP2020515026A/en
Priority to KR1020197005078A priority patent/KR102260368B1/en
Priority to PCT/EP2018/055925 priority patent/WO2019170252A1/en
Priority to CN201880007953.7A priority patent/CN110612362A/en
Priority to TW108102548A priority patent/TW201939789A/en
Publication of WO2019170252A1 publication Critical patent/WO2019170252A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568Transferring the substrates through a series of coating stations
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • C23C16/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • HELECTRICITY
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    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67715Changing the direction of the conveying path
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

Definitions

  • Embodiments of the present disclosure relate to vacuum processing systems and methods of operating a vacuum processing system, particularly for depositing two, three or more different materials on a plurality of substrates.
  • Embodiments particularly relate to vacuum processing systems and methods of operating a vacuum processing system, wherein substrates which are held by substrate carriers are transported in the vacuum processing system along a substrate transportation path, e.g. into various deposition modules and out of various deposition modules.
  • embodiments particularly relate to vacuum processing systems and methods of operating vacuum processing systems, wherein substrates are supported by substrate carriers in an essentially vertical orientation.
  • Opto-electronic devices that make use of organic materials are becoming increasingly popular for a number of reasons. Many of the materials used to make such devices are relatively inexpensive, so organic opto-electronic devices have the potential for cost advantages over inorganic devices. The inherent properties of organic materials, such as their flexibility, may be advantageous for applications such as for the deposition on flexible or inflexible substrates. Examples of organic opto electronic devices include organic light emitting devices, organic displays, organic phototransistors, organic photovoltaic cells, and organic photodetectors.
  • the organic materials of OLED devices may have performance advantages over conventional materials. For example, the wavelength at which an organic emissive layer emits light may be readily tuned with appropriate dopants. OLED devices make use of thin organic films that emit light when a voltage is applied across the device. OLED devices are becoming an increasingly interesting technology for use in applications such as flat panel displays, illumination, and backlighting.
  • Materials are typically deposited on a substrate in a vacuum processing system under sub-atmospheric pressure.
  • a mask device may be arranged in front of the substrate, wherein the mask device may have at least one opening or a plurality of openings that define an opening pattern corresponding to a material pattern to be deposited on the substrate, e.g. by evaporation.
  • the substrate is typically arranged behind the mask device during the deposition and is aligned relative to the mask device.
  • a substrate e.g. for manufacturing a color display.
  • a vacuum processing system comprising a plurality of deposition modules for depositing different materials on a plurality of substrates.
  • handling the substrate traffic and the mask traffic in large vacuum processing systems for depositing different materials may be challenging.
  • accelerating the tact time i.e. the time period in which one layer can be deposited is beneficial, for example, to increase throughput of a vacuum processing system.
  • a vacuum processing system for processing a substrate a vacuum processing system for depositing a plurality of layers on a substrate, and a method of operating a vacuum processing system are provided.
  • vacuum processing system for processing a substrate.
  • the processing system includes a first processing chamber connected to a first cluster chamber; a first processing station for processing the substrate in the first processing chamber; a second processing chamber connected to a second cluster chamber; a first transfer chamber connected to the first cluster chamber and the second cluster chamber, the first transfer chamber has a first length extending between the first cluster chamber and the second cluster chamber, the first transfer chamber being sized to accommodate the substrate; a second transfer chamber connected to the second cluster chamber, the second transfer chamber having a second length smaller than the first length; a substrate transportation arrangement provided to route the substrate in an orientation deviating from vertical by 15° or less through the first processing chamber, the second processing chamber, the first cluster chamber, the second cluster chamber, the first transfer chamber, and the second transfer chamber.
  • a vacuum processing system for depositing a plurality of layers on a substrate.
  • the vacuum processing system includes a first transfer chamber having a first length and connected to a vacuum chamber; and a second transfer chamber connected to a vacuum chamber, the second transfer chamber having a second length smaller than the first length.
  • a method of operating a vacuum processing system includes depositing a material layer on a first substrate during a first time period; parking a second substrate in a first transfer chamber during the first time period; and transferring a third substrate in a second transfer chamber during the first timer period.
  • a vacuum processing system for depositing a plurality of layers on the substrate.
  • the vacuum processing system includes a substrate repositioning chamber configured to selectively position a substrate in a first orientation with respect to a horizontal orientation and a second orientation with respect to a horizontal orientation.
  • the vacuum processing system further includes a cluster chamber and a buffer chamber between the vacuum chamber and the cluster chamber.
  • the buffer chamber includes one substrate transportation path and at least a further substrate transportation position.
  • FIG. 1 is a schematic illustration of a cluster-type substrate processing system
  • FIG. 2 is a schematic illustration of an in-line-type substrate processing system
  • FIG. 3 A is a schematic view of a vacuum processing system according to embodiments of the present disclosure having two or more vacuum cluster chamber and a plurality of processing chambers connected to one or more of the vacuum cluster chambers;
  • FIG. 3B is a schematic view of the vacuum processing system of FIG. 3 A and illustrating an exemplary substrate traffic or flow of substrates within the vacuum processing system according to embodiments of the present disclosure
  • FIG. 4A is a schematic view of a further vacuum processing system according to embodiments of the present disclosure having two or more vacuum cluster chamber and a plurality of processing chambers connected to one or more of the vacuum cluster chambers;
  • FIG. 4B is a schematic view of the vacuum processing system of FIG. 4A and illustrating an exemplary substrate traffic or flow of substrates within the vacuum processing system according to embodiments of the present disclosure;
  • FIGS. 5 A and 5B are schematic views of the first type of transfer chambers according to embodiments of the present disclosure, wherein FIG. 5A is a side view and FIG. 5B is a top view;
  • FIG. 6 is a schematic side view of a second type of transfer chambers according to embodiments of the present disclosure.
  • FIG. 7 shows a flow chart illustrating embodiments of methods of operating a vacuum processing system.
  • OLED devices such as OLED flat panel displays, may include a plurality of layers. For example, a combination of five or more, or even 10 or more layers may be provided.
  • organic layers and metallic layers are deposited on a backplane, wherein the backplane may include a TFT structure.
  • the organic layers may be sensitive to a gas environment (for example atmosphere) before encapsulation. Accordingly, it is beneficial to produce an entire layer stack within a vacuum processing system.
  • the throughput is inter alia defined by the tact time, i.e. the time during which one layer is deposited on the substrate and/or the substrate is transported from one processing station to another processing stations.
  • a quasi-continuous deposition can be provided according to embodiments of the present disclosure. That is, a processing station in a processing chamber processes one substrate, while a process substrate is moved out of the processing chamber and a new substrate is moved into the processing chamber. Accordingly, a processing station can operate quasi-continuously, i.e. at least 80% or at least 90% of the operation time of the vacuum processing system.
  • a plurality of substrates are processed at the same time, i.e. are provided in the vacuum processing system.
  • the substrates are routed within the system and according to the tact time.
  • the substrate traffic i.e. the timing at which substrates are moved in the system and processed, can be very challenging. This is particularly relevant for large area substrates, for example substrates having a size of 1 m 2 or above.
  • the footprint of the vacuum processing system provides a further limitation to available options of building a vacuum processing system. The combination of limitations of the footprint of the system and the desired tact time further increases the challenges.
  • FIG. 1 shows a vacuum processing system 1010.
  • the vacuum processing system 1010 has a cluster arrangement, wherein substrates to be processed are loaded to a central transfer chamber 1013 through a load lock chamber 1012. From the central transfer chamber, substrates to be processed can be moved into various processing chambers, such as processing chambers 1014A, 1014B, 1014C, and 1014D. The substrates are moved in a horizontal orientation. Deposition sources, such as deposition sourcesl0l6A, 1016B, 1016C, and 1016D are provided below the horizontally oriented substrates in the respective processing chambers. It is further possible to have a buffer chamber 1018 to store substrates that are presently not processed.
  • FIG. 1 further illustrates pillars 1020 that are provided in a factory building.
  • a cluster arrangement of a vacuum processing system includes a limitation to the number of processing chambers connected to the central transfer chamber 1013. Accordingly, the footprint of a vacuum processing system 1010 having a cluster arrangement is limited and can be provided at a floor space of a factory building, for example between pillars 1020.
  • FIG. 2 shows a further vacuum processing system 1011.
  • the vacuum processing system 1011 has an in-line arrangement, wherein substrates are moved from a first processing chambers at one end of the system to further, subsequent processing chambers.
  • the first processing chambers and the further, subsequent processing chambers are arranged in a line.
  • a substrate moves generally from one processing chamber to the next chamber.
  • a layer can be deposited or a substrate processing step can be provided in each of the processing chambers one after the other.
  • a first load lock chamber 1012 can be provided at one end of the vacuum processing system 1011.
  • the first load lock chamber can be provided for loading substrate into the vacuum processing system.
  • the second load lock chamber 1012’ can be provided at another end of the vacuum processing system 1011.
  • the second load lock chamber can be provided for unloading substrates out of the vacuum processing system.
  • the substrates are processed in subsequent chambers, such as processing chambers 1015A, 1015B, 1015C, and 1015D, and can be moved backwards through the processing chambers, e.g. without processing, to be unloaded in the first load lock chamber 1012.
  • a buffer chamber 1018 to store substrates that are presently not processed. Due to the in-line arrangement of the vacuum processing system 1011, floor space or footprint limitations are provided mainly in one dimension only, that is a vacuum processing system 1011 configured for depositing ten or more layers may be overly long.
  • FIG. 3A shows a vacuum processing system 1100 according to embodiments of the present disclosure.
  • the vacuum processing system 1100 provides a combination of a cluster arrangement and an in-line arrangement.
  • a plurality of processing chambers 1120 are provided.
  • the processing chambers 1120 can be connected to vacuum rotation chambers 1130.
  • the vacuum rotation chambers 1130 are provided in an in-line arrangement.
  • the vacuum rotation chambers 1130 can rotate substrates to be moved into and out of processing chambers 1120.
  • the combination of a cluster arrangement and an in-line arrangement can be considered a hybrid arrangement.
  • a vacuum processing system 1100 having a hybrid arrangement allows for a plurality of processing chambers 1120.
  • the length of the vacuum processing system does still not exceed a certain limit.
  • a cluster chamber or a vacuum cluster chamber is a chamber, e.g. a transfer chamber, configured to have two or more processing chambers connected thereto.
  • the vacuum rotation chambers 1130 are examples of a cluster chamber.
  • Cluster chambers can be provided in an in-line arrangement in the hybrid arrangement.
  • a vacuum rotation chamber or a rotation module may be understood as a vacuum chamber configured for changing the transport direction of the one or more carriers may be changed by rotating one or more carriers located on tracks in the rotation module.
  • the vacuum rotation chamber may include a rotation device configured for rotating tracks configured for supporting carriers around a rotation axis, e.g. a vertical rotation axis.
  • the rotation module includes at least two tracks which may be rotated around a rotation axis.
  • a first track, particularly a first substrate carrier track may be arranged on a first side of the rotation axis
  • a second track, particularly a second substrate carrier track may be arranged on a second side of the rotation axis.
  • the rotation module includes four tracks, particularly two mask carrier tracks and two substrate carrier tracks which may be rotated around the rotation axis.
  • a rotation module rotates by an angle of x°, e.g. 90°
  • a transport direction of one or more carriers arranged on the tracks may be changed by an angle of x°, e.g. 90°.
  • a rotation of the rotation module by an angle of 180° may correspond to a track switch, i.e. the position of the first substrate carrier track of the rotation module and the position of the second substrate carrier track of the rotation module may be exchanged or swapped and/or the position of the first mask carrier track of the rotation module and the position of the second mask carrier track of the rotation module may be exchanged or swapped.
  • the rotation module may include a rotor on which a substrate can be rotated.
  • chambers that are connected to each other.
  • Connected chambers may be directly connected, for example, wherein a flange of one chamber is connected to a flange of an adjacent chamber.
  • chambers may be connected to each other by a connection unit providing for example vacuum seals or other connection elements, or providing slit valves or other elements provided between two adjacent chambers.
  • a connection unit is very short as compared to a length of a large area substrate and can be distinguished from a vacuum chamber. For example, a connection unit has a length of 20% or less of the length of a substrate.
  • first chamber being connected to a second chamber can be understood that the first chamber is adjacent to the second chamber, for example, without an intermediate chamber.
  • first chamber can be directly connected to the second chamber or via a connection unit.
  • FIG. 3A shows the vacuum processing system 1100 and FIG. 3B illustrates the substrate traffic in the vacuum processing system.
  • the substrate enters the vacuum processing system 1100, for example, at a vacuum swing module 1110.
  • a load lock chamber may be connected to the vacuum swing module for loading and unloading substrates into the vacuum processing system.
  • the vacuum swing module typically receives the substrate directly or via a load lock chamber from an interface of the device manufacturing factory. Typically, the interface provides the substrate, for example, a large area substrate, in a horizontal orientation. The vacuum swing module moves the substrate from the orientation provided by the factory interface to an essentially vertical orientation.
  • the vacuum swing module may also be referred to as vacuum chamber for moving a substrate by an angle, particularly between a non-vertical orientation and a non horizontal orientation.
  • a vacuum swing module may be a vacuum chamber for movement from a first substrate orientation to a second substrate orientation.
  • the first substrate orientation can be a non-vertical orientation, such as a horizontal orientation
  • the second substrate orientation can be a non-horizontal orientation, such as a vertical orientation or an essentially vertical orientation.
  • the vacuum swing module can be a substrate repositioning chamber configured to selectively position a substrate therein in a first orientation with respect to a horizontal orientation and a second orientation with respect to a horizontal orientation.
  • the substrate is moved through a buffer chamber 1112 (see FIG. 3A), for example as indicated by arrow 1192.
  • the substrate is further moved through a cluster chamber, such as a vacuum rotation chamber 1130 into a processing chamber 1120.
  • a processing chamber 1120 In some embodiments described with respect to FIGS. 3A and 3B, the substrate is moved into the processing chamber 1120-1.
  • a hole inspection layer HIL can be deposited on the substrate in the processing chamber 1120-1.
  • CMOS complementary metal mask
  • the CMM provides an edge exclusion mask for each mobile display.
  • Each mobile display is masked with one opening and areas on the substrate corresponding to areas between displays are mainly covered by the CMM.
  • the substrate is moved out of the processing chamber 1120 into the adjacent cluster chamber, for example, vacuum rotation chamber 1130, through a first transfer chamber 1182, through a further cluster chamber, and into the processing chamber 1120-11.
  • processing chamber 1120-11 a hole transfer layer (HTL) is deposited on the substrate. Similarly to the hole injection layer, the hole transfer layer is manufactured with a common metal mask having one opening per mobile display. Further, the substrate is moved out of the processing chamber 1120-11 into the adjacent cluster chamber, for example, vacuum rotation chamber 1130, through a second transfer chamber 1184, through a further cluster chamber, and into the processing chamber 1120-III. This is indicated by further arrow 1194 in FIG. 3B.
  • HTL hole transfer layer
  • a transfer chamber or transit module may be understood as a vacuum module or vacuum chamber that can be inserted between at least two other vacuum modules or vacuum chambers, e.g. between vacuum rotation chambers.
  • Carriers e.g. mask carriers and/or substrate carriers, can be transported through the transfer chamber in a length direction of the transfer chamber.
  • the length direction of the transfer chamber may correspond to the main transportation direction the vacuum processing system, i.e. the in-line arrangement of the cluster chambers.
  • an electron blocking layer (EB) is deposited on the substrate.
  • the electron blocking layer can be deposited with a fine metal mask (FFM).
  • the fine metal mask has a plurality of openings, for example, sized in the micron range.
  • the plurality of fine openings correspond to a pixel of the mobile display or the color of a pixel of the mobile display. Accordingly, the FFM and the substrate needs to be highly accurately aligned with respect to each other to have an alignment of the pixels on the display in a micron range.
  • the substrate is moved from processing chamber 1120-III, to processing chamber 1120-IV, subsequently to processing chamber 1120-V and to processing chamber 1120- VI.
  • the substrate is moved out of processing chamber into, for example, a vacuum rotation chamber, through a transfer chamber, through a vacuum rotation chamber and into the next processing chamber.
  • an OLED layer for red pixels can be deposited in chamber 1120-IV
  • an OLED layer for green pixels can be deposited in chamber 1120-V
  • an OLED layer for blue pixels can be deposited in chamber 1120- VI.
  • Each of the layers for color pixels are deposited with the fine metal mask.
  • the respective fine metal masks are different such that the pixel dots of different color are adjacent to each other on the substrate to give the appearance of one pixel.
  • substrate can be moved out of the processing chamber into a cluster chamber through a transfer chamber through further cluster chamber and into the subsequent processing chamber.
  • electron transfer layer ETL
  • CCM common metal mask
  • a tact time of the system i.e. a time period
  • the substrate is processed within this time period, i.e. a first exemplary time period T.
  • one substrate is processed within the first time period T
  • another substrate that has just been processed is moved out of the processing chamber within the first time period T
  • yet further substrate to be processed is moved into the processing chamber within the first time period T.
  • One substrate can be processed in each of the processing chambers while two further substrates participate in substrate traffic with respect to this processing chamber, i.e. one further substrate is unloaded from the respective processing chamber and one substrate is loaded into the respective processing chamber during the first time period T.
  • substrates can be routed in one row or one part of the vacuum processing system from one end of the in-line arrangement of cluster chambers to the opposing end of the in-line arrangement of cluster chambers of the vacuum processing system. At the opposing end of the in-line arrangement, for example, the vacuum rotation chamber 1130 at the right hand side in FIG.
  • the substrate is transferred to the other row or the other part of the vacuum processing system. This is indicated by arrow 1115 in FIG. 3B.
  • the substrate is processed in subsequent processing chambers while moving from the opposing end of the in-line arrangement of cluster chambers to the one end, i.e. the starting end, of the in-line arrangement of cluster chambers.
  • an in-line arrangement of cluster chambers may, for example, separate the vacuum processing system in a first subset of processing chambers arranged on one side of the in-line arrangement of cluster chambers and a second subset of processing chambers arranged on the opposing side of the in-line arrangement of cluster chambers. Routing of a substrate is provided by routing the substrate through the first subset of processing chambers and subsequently routing the substrate through the second subset of processing chambers. Further aspects, features, embodiments, or details of such an aspect can be combined with aspects, features, embodiments, or details of other embodiments described herein.
  • the exemplary substrate is moved to processing chamber 1120- VIII, and subsequently to processing chamber 1120-IX.
  • a metallization layer which can exemplarily form a cathode of the OLED device, can be deposited in processing chamber 1120-VIII, for example with a common metal mask as described above.
  • one or more of the following metals may be deposited in some of the deposition modules: Al, Au, Ag, Cu.
  • At least one material may be a transparent conductive oxide material, e.g. ITO.
  • At least one material may be a transparent material.
  • a capping layer is deposited in processing chamber 1120-IX, for example with the common metal mask.
  • a further processing chamber 1120-X can be provided.
  • this processing chamber can be a substitute processing chamber replacing one of the other processing chambers while the other processing chamber is under maintenance.
  • a substrate can be moved via the buffer chamber 1112 to the vacuum swing module 1110, i.e. a substrate repositioning chamber. This is indicated by arrow 1193 in FIG. 3B.
  • the substrate is moved from the processing orientation, i.e. an essentially vertical orientation, to a substrate orientation corresponding to the interface with the factory, for example, a horizontal orientation.
  • the vacuum processing system 1100 shown in FIGS. 4 A and 4B includes a second vacuum swing module 1210, i.e. a second substrate repositioning chamber. Further, a second buffer chamber 1212 between a cluster chamber and the vacuum swing module can be provided. Accordingly, an exemplary substrate can be routed from one end of the in-line arrangement of cluster chambers to an opposing end of the in-line arrangement of cluster chambers. For example, the substrate can be loaded into the vacuum swing module 1110 and can be routed within the system essentially from one end, i.e. the left-hand side in FIG.
  • the substrate may be unloaded out of the vacuum processing system through vacuum swing module 1210, i.e. the vacuum swing module at the opposing end.
  • the substrate traffic may switch between one row of processing chambers (see arrow 1032 in FIG. 4B) to the other row of processing chambers (see arrow 1034 in FIG. 4B) as, for example, indicated by arrow 1294 in FIG. 4B when transported from one processing chamber to the subsequent processing chamber. Thereafter, the substrate can be moved, as indicated by arrow 1296 in FIG.
  • an exemplary substrate may switch rows of the vacuum processing system or part of the vacuum processing system (see arrows 1032 and 1034 in FOG: 32) back and forth.
  • Embodiments of the vacuum processing system 1100 shown and described with respect to FIGS. 4A and 4B provide a loading of substrates at one end of the hybrid system and unloading of substrates at another, for example, an opposing end of the hybrid system. Accordingly, two interfaces to a factory are provided for loading and unloading. Yet further, according to some embodiments, which can be combined with other embodiments described herein, a carrier on which a substrate has been transported from one end to the opposing end is returned within the vacuum processing system 1100 while being empty. A new substrate can be loaded at the loading and of the hybrid system.
  • a plurality of substrate are routed within a vacuum processing system according to embodiments described with respect to FIGS. 3A, 3B, 4A, and 4B.
  • the tact time should be as small as possible.
  • the tact time can be inter alia delimited by the processing time and/or the time to transport a substrate from one processing chamber to subsequent processing chamber. Further, best throughput is provided if the maximum number of substrates are simultaneously processed in the vacuum processing system 1100. Accordingly, each processing chamber is loaded with a substrate for processing essentially during steady state process condition.
  • FIGS. 3 A and 3B show transfer chambers, which are, for example, provided between cluster chambers such as making rotation chambers.
  • FIGS. 3 A and 3B shows first transfer chambers 1182 and a second transfer chambers 1184. Reducing the distance between adjacent or subsequent processing chambers as well as reducing the footprint of the vacuum processing system seems to suggest reduction of the lengths of the transfer chambers. It has surprisingly be found that a partial increase of the lengths of the transfer chambers improves the tact time of the vacuum processing system 1100.
  • a vacuum processing system includes at least a first type of a transfer chamber, i.e. a first transfer chamber 1182, of a first length and the second type of the transfer chamber, i.e. a second transfer chamber 1184, having a second length different from the first length.
  • a vacuum processing system for depositing a plurality of layers on a substrate.
  • the vacuum processing system includes a first transfer chamber having a first length and connected to a vacuum chamber; and a second transfer chamber connected to a vacuum chamber, the second transfer chamber having a second length smaller than the first length.
  • a vacuum processing system for processing a substrate includes a first processing chamber connected to a first cluster chamber; a first processing station for processing the substrate in the first processing chamber; a second processing chamber connected to a second cluster chamber; a first transfer chamber connected to the first cluster chamber and the second cluster chamber, the first transfer chamber has a first length extending between the first cluster chamber and the second cluster chamber, the first transfer chamber being sized to accommodate the substrate; a second transfer chamber connected to the second cluster chamber, the second transfer chamber having a second length smaller than the first length; a substrate transportation arrangement provided to route the substrate in an orientation deviating from vertical by 15° or less through the first processing chamber, the second processing chamber, the first cluster chamber, the second cluster chamber, the first transfer chamber, and the second transfer chamber.
  • the first transfer chamber having the first length allows to accommodate the substrate.
  • a substrate can be parked in the first transfer chamber. Parking of the substrate allows for having a substrate readily available. This can reduce the overall tact time.
  • the second transfer chamber having the second length smaller than the first length reduces the distance between adjacent or subsequent processing chambers.
  • the second transfer chamber having the second length smaller than the first length additionally or alternatively reduces the footprint of the vacuum processing system.
  • FIGS. 3A and 3B show pillars 1020. Pillars 1020 have previously been described with respect to FIG. 1 and FIG. 2. The pillars are a boundary condition provided by the fabrication hall and are defined, for example, by considerations of structural engineering calculations. Having two types of transfer chambers with different lengths further allows for adaptation of the vacuum processing system to a fabrication hall. Extending the length of a transfer chamber allows for having a pillar 1020 between two processing chambers, which are adjacent in one row and allows for providing a parked position.
  • Embodiments of the present disclosure surprisingly result in a combination of advantages including the reduction of the footprint, the reduction of the tact time, as well as adaptation to structural conditions in a fabrication hall.
  • the footprint of the vacuum processing system can be reduced by having the substrates, particularly large area substrates, in an essentially vertical orientation.
  • An“essentially vertical orientation” as used herein may be understood as an orientation with a deviation of 15° or less, 10° or less, particularly 5° or less from a vertical orientation, i.e. from the gravity vector.
  • an angle between a main surface of a substrate (or mask device) and the gravity vector may be between +10° and -10°, particularly between 0° and -5°.
  • the orientation of the substrate (or mask device) may not be exactly vertical during transport and/or during deposition, but slightly inclined with respect to the vertical axis, e.g. by an inclination angle between 0° and -5°, particularly between -1° and -5°.
  • a negative angle refers to an orientation of the substrate (or mask device) wherein the substrate (or mask device) is inclined downward.
  • a deviation of the substrate orientation from the gravity vector during deposition may be beneficial and might result in a more stable deposition process, or a facing down orientation might be suitable for reducing particles on the substrate during deposition.
  • a facing down orientation might be suitable for reducing particles on the substrate during deposition.
  • an exactly vertical orientation during transport and/or during deposition is possible.
  • the embodiments described herein can be utilized for inspecting large area coated substrates, e.g., for manufactured displays.
  • the substrates or substrate receiving areas for which the apparatuses and methods described herein are configured can be large area substrates having a size of e.g. 1 m 2 or above.
  • a large area substrate or carrier can be GEN 4.5, which corresponds to about 0.67 m 2 substrates (0.73x0.92m), GEN 5, which corresponds to about 1.4 m 2 substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m 2 substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7m 2 substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m 2 substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented. .
  • half sizes of the above mentioned substrate generations can be coated by evaporation of an apparatus for evaporating material.
  • the half sizes of the substrate generation may result from some processes running on a full substrate size, and subsequent processes running on half of a substrate previously processed.
  • substantially inflexible substrates e.g., a wafer, slices of transparent crystal such as sapphire or the like, or a glass plate.
  • present disclosure is not limited thereto and the term“substrate” may embrace flexible substrates such as a web or a foil.
  • substantially inflexible is understood to distinguish over“flexible”.
  • a substantially inflexible substrate can have a certain degree of flexibility, e.g. a glass plate having a thickness of 0.5 mm or below, wherein the flexibility of the substantially inflexible substrate is small in comparison to the flexible substrates.
  • a substrate may be made of any material suitable for material deposition.
  • the substrate may be made of a material selected from the group consisting of glass (for instance soda-lime glass, borosilicate glass etc.), metal, polymer, ceramic, compound materials, carbon fiber materials, metal or any other material or combination of materials which can be coated by a deposition process.
  • a vacuum processing system for large area substrates in vertical or essentially vertical orientation as described herein can further include carriers for supporting substrates during transportation within the vacuum system. Particularly for large area substrates, glass breakage within the vacuum processing system may be reduced by utilizing carriers. Accordingly, the substrate may maintain on a carrier for subsequent processing steps. For example, a substrate can be loaded on the carrier directly after or at entering the vacuum processing system and can be unloaded from the same carrier directly before or at leaving the vacuum processing system.
  • the vacuum processing system according to embodiments described herein may further include the substrate transportation arrangement configured for transporting substrates on carriers.
  • the substrate transportation arrangement can include a carrier transportation system. As shown in FIG.
  • carriers may be transported along transportation paths 1171, 1172, 1174, 1173 and may also be provided on transportation positions, such as transportation position 1175.
  • the carrier transportation system may include a holding system, e.g. a magnetic levitation system, for lifting and holding the carriers, and a driving system for moving the carriers along tracks along a carrier transportation path.
  • the substrate transportation arrangement may include two substrate rotation positions in the vacuum rotation chamber.
  • a vacuum processing system can include a vacuum chamber for moving a substrate by an angle, i.e. a vacuum swing module, a cluster chamber, e.g. a vacuum rotation chamber, and a buffer chamber between the vacuum chamber and the cluster chamber.
  • the buffer chamber includes one substrate transportation path and at least a further substrate transportation position.
  • a substrate can wait or can be parked in the buffer chamber, for example at the transportation position 1175 awaiting unloading through the vacuum swing module.
  • an intermediate buffer chamber having the capability to accommodate two or more substrates can further improve the tact time.
  • the term“carrier” as used herein may particularly refer to a“substrate carrier” configured to hold a substrate during transport along a carrier transportation path, e.g. along a substrate carrier track.
  • the substrate may be held at the carrier in a non-horizontal orientation, particularly in an essentially vertical orientation.
  • the term“carrier” as used herein may refer to a“substrate carrier” configured to hold a substrate during the transport along a transportation path, e.g. along a substrate carrier track.
  • a carrier may include a carrier body with a holding surface configured to hold a substrate or a mask device, particularly in a non-horizontal orientation, more particularly in an essentially vertical orientation.
  • the carrier body may include a guided portion configured to be guided along a carrier transportation path.
  • the carrier may be held by a holding device, e.g. by a magnetic levitation system, and the carrier may be moved by a driving device, e.g. along a mask carrier track or along a substrate carrier track.
  • a substrate may be held at a substrate carrier by a chucking device, e.g. by an electrostatic chuck and/or by a magnetic chuck. Other types of chucking devices may be used.
  • Transporting”,“moving”,“routing”,“replacing” or“rotating” a substrate or a mask device as used herein may refer to a respective movement of a carrier which holds a, particularly in a non-horizontal orientation, more particularly in an essentially vertical orientation.
  • the substrate carrier is transported by a transportation system, which may include a magnetic levitation system.
  • a magnetic levitation system may be provided so that at least a part of the weight of the substrate carrier may be carried by the magnetic levitation system.
  • the substrate carrier can be guided essentially contactlessly along the substrate carrier tracks through the vacuum processing system.
  • a drive for moving the carrier along the substrate carrier tracks may be provided.
  • Contactless levitation reduces particle generation in the vacuum processing system. This may be particularly advantageous for manufacturing of OLED devices.
  • the term“carrier” as used herein may refer to a“mask carrier” configured to hold a mask device during the transport along a transportation path, e.g. along a mask carrier track.
  • the mask device may be held at the carrier in a non-horizontal orientation, particularly in an essentially vertical orientation.
  • a substrate may be held at a substrate carrier by a chucking device, e.g. by an electrostatic chuck and/or by a magnetic chuck.
  • a mask device may be held at a mask carrier by a chucking device, e.g. an electrostatic chuck and/or a magnetic chuck.
  • chucking devices e.g. an electrostatic chuck and/or a magnetic chuck.
  • Other types of chucking devices may be used.
  • layer deposition on essentially vertically oriented large area substrates may be beneficially be provided by deposition sources, for example, evaporation sources 1180 (see, e.g., FIG. 3A), therein the evaporation source can be provided as a line source.
  • the line source can be moved along the surface of the substrate to deposit material on, for example, the rectangular large area substrate.
  • two or more, for example, three line sources can be provided for a deposition source.
  • organic materials may be co evaporated, wherein two or more organic materials form one material layer.
  • a deposition source e.g. a vapor source configured for directing evaporated material toward one or more substrates
  • the deposition source is typically arranged in a processing chamber or deposition module.
  • the deposition source may be movable along a source transportation track which may be provided in the processing chamber.
  • the deposition source may linearly move along the source transportation track while directing the evaporated material toward one or more substrates.
  • a processing chamber or a deposition module may include two deposition areas, i.e. a first deposition area for arranging a first substrate and a second deposition area for arranging a second substrate.
  • the first deposition area may be arranged opposite the second deposition area in the deposition module.
  • the deposition source may be configured to subsequently direct evaporated material toward the first substrate arranged in the first deposition area and toward the second substrate arranged in the second deposition area.
  • an evaporation direction of the deposition source may be reversible, e.g. by rotating at least a part of the deposition source, e.g. by an angle of 180°.
  • a first transfer chamber having a first length can be connected to a vacuum cluster chamber. Further, a second transfer chamber can be connected to a vacuum cluster chamber, the second transfer chamber having a second length smaller than the first length.
  • FIG. 5A shows a portion of the vacuum processing system in a side view.
  • a first transfer chamber 1182 having a first length is provided between two adjacent cluster chambers, for example, vacuum rotation chambers 1130.
  • the first length corresponds to a size, such that the substrate having a substrate generation, for which the vacuum processing system is manufactured, can be provided within the first transfer chamber.
  • a substrate or a substrate carrier does not necessarily extend into one of the cluster chambers when provided in the first transfer chamber.
  • a mask or a mask carrier does not necessarily extend into one of the cluster chambers when provided in the first transfer chamber.
  • FIG. 5 A shows exemplarily the mask carrier outline 1310 of a mask carrier in dotted lines.
  • FIG. 5A shows exemplarily the substrate carrier outline 1312 of a substrate carrier in dashed lines.
  • the mask carrier and the substrate carrier can be provided entirely within the first transfer chamber 1182. Accordingly, a mask carrier as well as a substrate carrier can be provided in the first transfer chamber and both adjacent vacuum rotation chambers can be rotated. The rotation is not blocked by a mask carrier or a substrate carrier extending in the vacuum rotation chamber.
  • FIG. 5B shows a top view of a portion of the vacuum processing system.
  • the first transfer chamber is provided between adjacent cluster chambers, for example vacuum rotation chambers 1130.
  • a portion of a substrate transportation arrangement is shown as a substrate transportation unit 1320.
  • the substrate transportation unit 1320 is configured for transportation of a substrate carrier through the transfer chamber.
  • the substrate transportation arrangement may include two substrate transportation paths.
  • Two substrate transportation units 1320 are provided to generate two substrate carrier paths.
  • a portion of a mask transportation arrangement is shown as a mask transportation unit 1322.
  • the mask transportation unit 1322 is configured for transportation of a mask carrier through the transfer chamber.
  • Two mask transportation units 1322 are provided to generate two mask carrier paths.
  • the substrate transportation unit and/or the mask transportation unit can be provided with a levitation element and a drive element.
  • the levitation element may contactlessly support a carrier.
  • the drive element May contactlessly drive a carrier along the path.
  • one or more substrate park positions 1330 can be provided in the first transfer chamber.
  • the substrate carrier In light of the length of the first transfer chamber, the substrate carrier can be parked in the first transfer chamber.
  • the substrate carrier can be parked without deteriorating a rotation function of the vacuum rotation module adjacent to the first transfer chamber.
  • the first transfer chamber being sized to accommodate the substrate carrier.
  • FIG. 6 shows a second transfer chamber 1184 having a second length that is shorter than the length of the first transfer chamber 1182 shown in FIGS. 5 A and 5B.
  • the second length of the second transfer chamber is such that the mask carrier outline 1310 of a mask carrier shown dotted and a substrate carrier outline 1312 shown in dashed lines extends beyond opposing sides of the second transfer chamber. Accordingly, the footprint of the vacuum processing system can be reduced having shorter second transfer chambers.
  • the second length of the second transfer chamber is smaller than a horizontal dimension of the substrate.
  • FIG. 7 illustrates a flowchart of a method of operating a vacuum processing system according to embodiments of the present disclosure.
  • vacuum processing system can be operated having tact time.
  • the tact time can have a duration of a time period, wherein the time period can be defined by the length of a deposition process of depositing the material layer.
  • a substrate can be accommodated, for example, parked within the first transfer chamber.
  • the first transfer chamber can be a transfer chamber 1182 as shown in FIG. 5 A.
  • the first transfer chamber can have a length sufficiently large to accommodate the substrate or the substrate carrier, respectively.
  • a substrate can be parked in the first transfer chamber during a first time period corresponding to the tact time. Further, as indicated by box 704, another substrate can be transferred through a second transfer chamber during the first time period, i.e. the same time period.
  • the second transfer chamber can have a second length shorter than the first length of the first transfer chamber.
  • the second transfer chamber can have a length shorter than the corresponding dimension of a substrate carrier or a mask carrier, respectively.
  • yet further substrate may be moved past the park substrate in the first transfer chamber during the same, first time period (see box 706).
  • the park substrate can be provided in a substrate park positions 1330 as shown in FIG. 5A.
  • yet further substrate can be processed in the same, first time period.

Abstract

A vacuum processing system for processing a substrate is described. The processing system includes a first processing chamber connected to a first cluster chamber; a first processing station for processing the substrate in the first processing chamber; a second processing chamber connected to a second cluster chamber; a first transfer chamber connected to the first cluster chamber and the second cluster chamber, the first transfer chamber has a first length extending between the first cluster chamber and the second cluster chamber, the first transfer chamber being sized to accommodate the substrate; a second transfer chamber connected to the second cluster chamber, the second transfer chamber having a second length smaller than the first length; a substrate transportation arrangement provided to route the substrate in an orientation deviating from vertical by 15° or less through the first processing chamber, the second processing chamber, the first cluster chamber, the second cluster chamber, the first transfer chamber, and the second transfer chamber.

Description

VACUUM PROCESSING SYSTEM AND METHOD OF OPERATING A VACUUM
PROCESSING SYSTEM
TECHNICAL FIELD
[0001] Embodiments of the present disclosure relate to vacuum processing systems and methods of operating a vacuum processing system, particularly for depositing two, three or more different materials on a plurality of substrates. Embodiments particularly relate to vacuum processing systems and methods of operating a vacuum processing system, wherein substrates which are held by substrate carriers are transported in the vacuum processing system along a substrate transportation path, e.g. into various deposition modules and out of various deposition modules. Further, embodiments particularly relate to vacuum processing systems and methods of operating vacuum processing systems, wherein substrates are supported by substrate carriers in an essentially vertical orientation.
BACKGROUND
[0002] Opto-electronic devices that make use of organic materials are becoming increasingly popular for a number of reasons. Many of the materials used to make such devices are relatively inexpensive, so organic opto-electronic devices have the potential for cost advantages over inorganic devices. The inherent properties of organic materials, such as their flexibility, may be advantageous for applications such as for the deposition on flexible or inflexible substrates. Examples of organic opto electronic devices include organic light emitting devices, organic displays, organic phototransistors, organic photovoltaic cells, and organic photodetectors.
[0003] The organic materials of OLED devices may have performance advantages over conventional materials. For example, the wavelength at which an organic emissive layer emits light may be readily tuned with appropriate dopants. OLED devices make use of thin organic films that emit light when a voltage is applied across the device. OLED devices are becoming an increasingly interesting technology for use in applications such as flat panel displays, illumination, and backlighting.
[0004] Materials, particularly organic materials, are typically deposited on a substrate in a vacuum processing system under sub-atmospheric pressure. During deposition, a mask device may be arranged in front of the substrate, wherein the mask device may have at least one opening or a plurality of openings that define an opening pattern corresponding to a material pattern to be deposited on the substrate, e.g. by evaporation. The substrate is typically arranged behind the mask device during the deposition and is aligned relative to the mask device.
[0005] Typically, five or more or even ten or more material layers may subsequently be deposited on a substrate, e.g. for manufacturing a color display. It may be difficult to handle a vacuum processing system comprising a plurality of deposition modules for depositing different materials on a plurality of substrates. In particular, handling the substrate traffic and the mask traffic in large vacuum processing systems for depositing different materials may be challenging.
[0006] Accordingly, it would be beneficial to provide reliable vacuum processing systems and methods of reliably operating a vacuum processing system for the deposition of materials on a plurality of substrates. In particular, accelerating the tact time, i.e. the time period in which one layer can be deposited is beneficial, for example, to increase throughput of a vacuum processing system.
SUMMARY
[0007] In light of the above, a vacuum processing system for processing a substrate, a vacuum processing system for depositing a plurality of layers on a substrate, and a method of operating a vacuum processing system are provided.
[0008] According to one aspect of the present disclosure, vacuum processing system for processing a substrate is provided. The processing system includes a first processing chamber connected to a first cluster chamber; a first processing station for processing the substrate in the first processing chamber; a second processing chamber connected to a second cluster chamber; a first transfer chamber connected to the first cluster chamber and the second cluster chamber, the first transfer chamber has a first length extending between the first cluster chamber and the second cluster chamber, the first transfer chamber being sized to accommodate the substrate; a second transfer chamber connected to the second cluster chamber, the second transfer chamber having a second length smaller than the first length; a substrate transportation arrangement provided to route the substrate in an orientation deviating from vertical by 15° or less through the first processing chamber, the second processing chamber, the first cluster chamber, the second cluster chamber, the first transfer chamber, and the second transfer chamber.
[0009] According to another aspect of the present disclosure, a vacuum processing system for depositing a plurality of layers on a substrate is provided. The vacuum processing system includes a first transfer chamber having a first length and connected to a vacuum chamber; and a second transfer chamber connected to a vacuum chamber, the second transfer chamber having a second length smaller than the first length.
[0010] According to another aspect of the present disclosure, a method of operating a vacuum processing system is provided. The method includes depositing a material layer on a first substrate during a first time period; parking a second substrate in a first transfer chamber during the first time period; and transferring a third substrate in a second transfer chamber during the first timer period.
[0011] Further aspects, advantages and features of the present disclosure are apparent from the description and the accompanying drawings.
[0012] According to another aspect of the present disclosure, a vacuum processing system for depositing a plurality of layers on the substrate is provided. The vacuum processing system includes a substrate repositioning chamber configured to selectively position a substrate in a first orientation with respect to a horizontal orientation and a second orientation with respect to a horizontal orientation. The vacuum processing system further includes a cluster chamber and a buffer chamber between the vacuum chamber and the cluster chamber. The buffer chamber includes one substrate transportation path and at least a further substrate transportation position. Further aspects, advantages, features and embodiments of the present disclosure can be combined with such an aspect.
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the present disclosure, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the disclosure and are described in the following. Typical embodiments are depicted in the drawings and are detailed in the description which follows.
[0014] FIG. 1 is a schematic illustration of a cluster-type substrate processing system;
[0015] FIG. 2 is a schematic illustration of an in-line-type substrate processing system;
[0016] FIG. 3 A is a schematic view of a vacuum processing system according to embodiments of the present disclosure having two or more vacuum cluster chamber and a plurality of processing chambers connected to one or more of the vacuum cluster chambers;
[0017] FIG. 3B is a schematic view of the vacuum processing system of FIG. 3 A and illustrating an exemplary substrate traffic or flow of substrates within the vacuum processing system according to embodiments of the present disclosure;
[0018] FIG. 4A is a schematic view of a further vacuum processing system according to embodiments of the present disclosure having two or more vacuum cluster chamber and a plurality of processing chambers connected to one or more of the vacuum cluster chambers; [0019] FIG. 4B is a schematic view of the vacuum processing system of FIG. 4A and illustrating an exemplary substrate traffic or flow of substrates within the vacuum processing system according to embodiments of the present disclosure;
[0020] FIGS. 5 A and 5B are schematic views of the first type of transfer chambers according to embodiments of the present disclosure, wherein FIG. 5A is a side view and FIG. 5B is a top view;
[0021] FIG. 6 is a schematic side view of a second type of transfer chambers according to embodiments of the present disclosure; and
[0022] FIG. 7 shows a flow chart illustrating embodiments of methods of operating a vacuum processing system.
DETAILED DESCRIPTION OF EMBODIMENTS
[0023] Reference will now be made in detail to the various embodiments, one or more examples of which are illustrated in the FIG.ures. Each example is provided by way of explanation and is not meant as a limitation. For example, features illustrated or described as part of one embodiment can be used on or in conjunction with any other embodiment to yield yet a further embodiment. It is intended that the present disclosure includes such modifications and variations.
[0024] Within the following description of the drawings, same reference numbers refer to the same or to similar components. Generally, only the differences with respect to the individual embodiments are described. Unless specified otherwise, the description of a part or aspect in one embodiment applies to a corresponding part or aspect in another embodiment as well.
[0025] OLED devices, such as OLED flat panel displays, may include a plurality of layers. For example, a combination of five or more, or even 10 or more layers may be provided. Typically, organic layers and metallic layers are deposited on a backplane, wherein the backplane may include a TFT structure. Particularly the organic layers may be sensitive to a gas environment (for example atmosphere) before encapsulation. Accordingly, it is beneficial to produce an entire layer stack within a vacuum processing system.
[0026] Further, the increasing demand for OLED displays, such as for mobile devices, result in an increasing demand for high throughput and high yield of a vacuum processing system. The throughput is inter alia defined by the tact time, i.e. the time during which one layer is deposited on the substrate and/or the substrate is transported from one processing station to another processing stations. For improved throughput a quasi-continuous deposition can be provided according to embodiments of the present disclosure. That is, a processing station in a processing chamber processes one substrate, while a process substrate is moved out of the processing chamber and a new substrate is moved into the processing chamber. Accordingly, a processing station can operate quasi-continuously, i.e. at least 80% or at least 90% of the operation time of the vacuum processing system.
[0027] For a vacuum processing system and methods of operating a vacuum processing system, wherein an entire layer stack having, for example, 10 or more layers, is manufactured within one system, a plurality of substrates are processed at the same time, i.e. are provided in the vacuum processing system. The substrates are routed within the system and according to the tact time. The substrate traffic, i.e. the timing at which substrates are moved in the system and processed, can be very challenging. This is particularly relevant for large area substrates, for example substrates having a size of 1 m2 or above. For large area substrates, the footprint of the vacuum processing system provides a further limitation to available options of building a vacuum processing system. The combination of limitations of the footprint of the system and the desired tact time further increases the challenges.
[0028] FIG. 1 shows a vacuum processing system 1010. The vacuum processing system 1010 has a cluster arrangement, wherein substrates to be processed are loaded to a central transfer chamber 1013 through a load lock chamber 1012. From the central transfer chamber, substrates to be processed can be moved into various processing chambers, such as processing chambers 1014A, 1014B, 1014C, and 1014D. The substrates are moved in a horizontal orientation. Deposition sources, such as deposition sourcesl0l6A, 1016B, 1016C, and 1016D are provided below the horizontally oriented substrates in the respective processing chambers. It is further possible to have a buffer chamber 1018 to store substrates that are presently not processed. FIG. 1 further illustrates pillars 1020 that are provided in a factory building. A cluster arrangement of a vacuum processing system includes a limitation to the number of processing chambers connected to the central transfer chamber 1013. Accordingly, the footprint of a vacuum processing system 1010 having a cluster arrangement is limited and can be provided at a floor space of a factory building, for example between pillars 1020.
[0029] FIG. 2 shows a further vacuum processing system 1011. The vacuum processing system 1011 has an in-line arrangement, wherein substrates are moved from a first processing chambers at one end of the system to further, subsequent processing chambers. The first processing chambers and the further, subsequent processing chambers are arranged in a line. A substrate moves generally from one processing chamber to the next chamber. A layer can be deposited or a substrate processing step can be provided in each of the processing chambers one after the other. For example, as shown in FIG. 2, a first load lock chamber 1012 can be provided at one end of the vacuum processing system 1011. The first load lock chamber can be provided for loading substrate into the vacuum processing system. The second load lock chamber 1012’ can be provided at another end of the vacuum processing system 1011. The second load lock chamber can be provided for unloading substrates out of the vacuum processing system. According to another example, the substrates are processed in subsequent chambers, such as processing chambers 1015A, 1015B, 1015C, and 1015D, and can be moved backwards through the processing chambers, e.g. without processing, to be unloaded in the first load lock chamber 1012. It is further possible to have a buffer chamber 1018 to store substrates that are presently not processed. Due to the in-line arrangement of the vacuum processing system 1011, floor space or footprint limitations are provided mainly in one dimension only, that is a vacuum processing system 1011 configured for depositing ten or more layers may be overly long.
[0030] FIG. 3A shows a vacuum processing system 1100 according to embodiments of the present disclosure. The vacuum processing system 1100 provides a combination of a cluster arrangement and an in-line arrangement. A plurality of processing chambers 1120 are provided. The processing chambers 1120 can be connected to vacuum rotation chambers 1130. The vacuum rotation chambers 1130 are provided in an in-line arrangement. The vacuum rotation chambers 1130 can rotate substrates to be moved into and out of processing chambers 1120. The combination of a cluster arrangement and an in-line arrangement can be considered a hybrid arrangement. A vacuum processing system 1100 having a hybrid arrangement allows for a plurality of processing chambers 1120. The length of the vacuum processing system does still not exceed a certain limit.
[0031] According to embodiments of the present disclosure, a cluster chamber or a vacuum cluster chamber is a chamber, e.g. a transfer chamber, configured to have two or more processing chambers connected thereto. Accordingly, the vacuum rotation chambers 1130 are examples of a cluster chamber. Cluster chambers can be provided in an in-line arrangement in the hybrid arrangement.
[0032] A vacuum rotation chamber or a rotation module (also referred to herein as “routing module” or“routing chamber”) may be understood as a vacuum chamber configured for changing the transport direction of the one or more carriers may be changed by rotating one or more carriers located on tracks in the rotation module. For example, the vacuum rotation chamber may include a rotation device configured for rotating tracks configured for supporting carriers around a rotation axis, e.g. a vertical rotation axis. In some embodiments, the rotation module includes at least two tracks which may be rotated around a rotation axis. A first track, particularly a first substrate carrier track, may be arranged on a first side of the rotation axis, and a second track, particularly a second substrate carrier track, may be arranged on a second side of the rotation axis.
[0033] In some embodiments, the rotation module includes four tracks, particularly two mask carrier tracks and two substrate carrier tracks which may be rotated around the rotation axis.
[0034] When a rotation module rotates by an angle of x°, e.g. 90°, a transport direction of one or more carriers arranged on the tracks may be changed by an angle of x°, e.g. 90°. A rotation of the rotation module by an angle of 180° may correspond to a track switch, i.e. the position of the first substrate carrier track of the rotation module and the position of the second substrate carrier track of the rotation module may be exchanged or swapped and/or the position of the first mask carrier track of the rotation module and the position of the second mask carrier track of the rotation module may be exchanged or swapped. According to some embodiments, the rotation module may include a rotor on which a substrate can be rotated.
[0035] Within the present disclosure reference is made to chambers that are connected to each other. Connected chambers may be directly connected, for example, wherein a flange of one chamber is connected to a flange of an adjacent chamber. Alternatively, chambers may be connected to each other by a connection unit providing for example vacuum seals or other connection elements, or providing slit valves or other elements provided between two adjacent chambers. A connection unit is very short as compared to a length of a large area substrate and can be distinguished from a vacuum chamber. For example, a connection unit has a length of 20% or less of the length of a substrate. According to embodiments, which can be combined with other embodiments described herein, first chamber being connected to a second chamber can be understood that the first chamber is adjacent to the second chamber, for example, without an intermediate chamber. As described above, the first chamber can be directly connected to the second chamber or via a connection unit.
[0036] FIG. 3A shows the vacuum processing system 1100 and FIG. 3B illustrates the substrate traffic in the vacuum processing system. The substrate enters the vacuum processing system 1100, for example, at a vacuum swing module 1110. According to further modifications, a load lock chamber may be connected to the vacuum swing module for loading and unloading substrates into the vacuum processing system. The vacuum swing module typically receives the substrate directly or via a load lock chamber from an interface of the device manufacturing factory. Typically, the interface provides the substrate, for example, a large area substrate, in a horizontal orientation. The vacuum swing module moves the substrate from the orientation provided by the factory interface to an essentially vertical orientation. The essentially vertical orientation of the substrate is maintained during processing of the substrate in the vacuum processing system 1100 until the substrate is moved, for example, back to a horizontal orientation. Swinging, moving by an angle, or rotating the substrate is illustrated by arrow 1191 in FIG. 3B. Accordingly, in the present disclosure, the vacuum swing module may also be referred to as vacuum chamber for moving a substrate by an angle, particularly between a non-vertical orientation and a non horizontal orientation.
[0037] According to embodiments of the present disclosure, a vacuum swing module may be a vacuum chamber for movement from a first substrate orientation to a second substrate orientation. For example, the first substrate orientation can be a non-vertical orientation, such as a horizontal orientation, and the second substrate orientation can be a non-horizontal orientation, such as a vertical orientation or an essentially vertical orientation. According to some embodiments, which can be combined with other embodiments described herein, the vacuum swing module can be a substrate repositioning chamber configured to selectively position a substrate therein in a first orientation with respect to a horizontal orientation and a second orientation with respect to a horizontal orientation.
[0038] The substrate is moved through a buffer chamber 1112 (see FIG. 3A), for example as indicated by arrow 1192. The substrate is further moved through a cluster chamber, such as a vacuum rotation chamber 1130 into a processing chamber 1120. In some embodiments described with respect to FIGS. 3A and 3B, the substrate is moved into the processing chamber 1120-1. For example, a hole inspection layer (HIL) can be deposited on the substrate in the processing chamber 1120-1.
[0039] In the present disclosure, reference is made to manufacturing of an OLED flat-panel display, particularly for mobile devices. However, similar consideration, examples, embodiments and aspects may also be provided for other substrate processing applications. For the example of an OLED mobile display, a common metal mask (CMM) is provided in the processing chamber 1120-1. The CMM provides an edge exclusion mask for each mobile display. Each mobile display is masked with one opening and areas on the substrate corresponding to areas between displays are mainly covered by the CMM. [0040] Subsequently, the substrate is moved out of the processing chamber 1120 into the adjacent cluster chamber, for example, vacuum rotation chamber 1130, through a first transfer chamber 1182, through a further cluster chamber, and into the processing chamber 1120-11. This is indicated by arrow 1194 in FIG. 3B. In processing chamber 1120-11 a hole transfer layer (HTL) is deposited on the substrate. Similarly to the hole injection layer, the hole transfer layer is manufactured with a common metal mask having one opening per mobile display. Further, the substrate is moved out of the processing chamber 1120-11 into the adjacent cluster chamber, for example, vacuum rotation chamber 1130, through a second transfer chamber 1184, through a further cluster chamber, and into the processing chamber 1120-III. This is indicated by further arrow 1194 in FIG. 3B.
[0041] A transfer chamber or transit module may be understood as a vacuum module or vacuum chamber that can be inserted between at least two other vacuum modules or vacuum chambers, e.g. between vacuum rotation chambers. Carriers, e.g. mask carriers and/or substrate carriers, can be transported through the transfer chamber in a length direction of the transfer chamber. The length direction of the transfer chamber may correspond to the main transportation direction the vacuum processing system, i.e. the in-line arrangement of the cluster chambers.
[0042] In processing chamber 1120-III an electron blocking layer (EB) is deposited on the substrate. The electron blocking layer can be deposited with a fine metal mask (FFM). The fine metal mask has a plurality of openings, for example, sized in the micron range. The plurality of fine openings correspond to a pixel of the mobile display or the color of a pixel of the mobile display. Accordingly, the FFM and the substrate needs to be highly accurately aligned with respect to each other to have an alignment of the pixels on the display in a micron range.
[0043] The substrate is moved from processing chamber 1120-III, to processing chamber 1120-IV, subsequently to processing chamber 1120-V and to processing chamber 1120- VI. For each of the transportation paths, for example, two substrate transportation paths, the substrate is moved out of processing chamber into, for example, a vacuum rotation chamber, through a transfer chamber, through a vacuum rotation chamber and into the next processing chamber. For example, an OLED layer for red pixels can be deposited in chamber 1120-IV, an OLED layer for green pixels can be deposited in chamber 1120-V, and an OLED layer for blue pixels can be deposited in chamber 1120- VI. Each of the layers for color pixels are deposited with the fine metal mask. The respective fine metal masks are different such that the pixel dots of different color are adjacent to each other on the substrate to give the appearance of one pixel. As indicated by further arrow 1194 extending from processing chamber 1120- VI to processing chamber 1120- VII substrate can be moved out of the processing chamber into a cluster chamber through a transfer chamber through further cluster chamber and into the subsequent processing chamber. In processing chamber 1120-VII, and electron transfer layer (ETL) may be deposited with the common metal mask (CMM).
[0044] The substrate traffic described above for one substrate is similar for a plurality of substrates, which are simultaneously processed in the vacuum processing system 1100. According to some embodiments, which can be combined with other embodiments described herein, a tact time of the system, i.e. a time period, can be 180 seconds or below, e.g. from 60 seconds to 180 seconds. Accordingly, the substrate is processed within this time period, i.e. a first exemplary time period T. In the processing chambers described above and the subsequent processing chambers described below, one substrate is processed within the first time period T, another substrate that has just been processed is moved out of the processing chamber within the first time period T, and yet further substrate to be processed is moved into the processing chamber within the first time period T. One substrate can be processed in each of the processing chambers while two further substrates participate in substrate traffic with respect to this processing chamber, i.e. one further substrate is unloaded from the respective processing chamber and one substrate is loaded into the respective processing chamber during the first time period T.
[0045] The above described route of an exemplary substrate from processing chamber 1120-1 to processing chamber 1120-VII is provided in a row of processing chambers of the vacuum processing system 1100, for example, the lower row in FIGS. 3A and 3B. The row or lower part of the vacuum processing system is indicated by arrow 1032 in FIG. 3B. [0046] According to some embodiments, which can be combined with other embodiments described herein, substrates can be routed in one row or one part of the vacuum processing system from one end of the in-line arrangement of cluster chambers to the opposing end of the in-line arrangement of cluster chambers of the vacuum processing system. At the opposing end of the in-line arrangement, for example, the vacuum rotation chamber 1130 at the right hand side in FIG. 3 A, the substrate is transferred to the other row or the other part of the vacuum processing system. This is indicated by arrow 1115 in FIG. 3B. On the other row or in the other part of the vacuum processing system, which is indicated by arrow 1034 in FIG. 3B, the substrate is processed in subsequent processing chambers while moving from the opposing end of the in-line arrangement of cluster chambers to the one end, i.e. the starting end, of the in-line arrangement of cluster chambers.
[0047] According to another aspect of the present disclosure, an in-line arrangement of cluster chambers may, for example, separate the vacuum processing system in a first subset of processing chambers arranged on one side of the in-line arrangement of cluster chambers and a second subset of processing chambers arranged on the opposing side of the in-line arrangement of cluster chambers. Routing of a substrate is provided by routing the substrate through the first subset of processing chambers and subsequently routing the substrate through the second subset of processing chambers. Further aspects, features, embodiments, or details of such an aspect can be combined with aspects, features, embodiments, or details of other embodiments described herein.
[0048] In the example shown in FIG. 3A, the exemplary substrate is moved to processing chamber 1120- VIII, and subsequently to processing chamber 1120-IX. For example, a metallization layer, which can exemplarily form a cathode of the OLED device, can be deposited in processing chamber 1120-VIII, for example with a common metal mask as described above. For example, one or more of the following metals may be deposited in some of the deposition modules: Al, Au, Ag, Cu. At least one material may be a transparent conductive oxide material, e.g. ITO. At least one material may be a transparent material. Thereafter a capping layer (CPL) is deposited in processing chamber 1120-IX, for example with the common metal mask. [0049] According to some embodiments, which can be combined with other embodiments described herein, a further processing chamber 1120-X can be provided. For example, this processing chamber can be a substitute processing chamber replacing one of the other processing chambers while the other processing chamber is under maintenance.
[0050] After a final processing step, a substrate can be moved via the buffer chamber 1112 to the vacuum swing module 1110, i.e. a substrate repositioning chamber. This is indicated by arrow 1193 in FIG. 3B. In the vacuum swing module the substrate is moved from the processing orientation, i.e. an essentially vertical orientation, to a substrate orientation corresponding to the interface with the factory, for example, a horizontal orientation.
[0051] Another embodiment, which may incorporate features of the embodiments described with respect to FIGS. 3A and 3B, is described with respect to FIGS. 4A and 4B. The vacuum processing system 1100 shown in FIGS. 4 A and 4B includes a second vacuum swing module 1210, i.e. a second substrate repositioning chamber. Further, a second buffer chamber 1212 between a cluster chamber and the vacuum swing module can be provided. Accordingly, an exemplary substrate can be routed from one end of the in-line arrangement of cluster chambers to an opposing end of the in-line arrangement of cluster chambers. For example, the substrate can be loaded into the vacuum swing module 1110 and can be routed within the system essentially from one end, i.e. the left-hand side in FIG. 4A, to the opposing end, i.e. the right hand side in FIG. 4A. The substrate may be unloaded out of the vacuum processing system through vacuum swing module 1210, i.e. the vacuum swing module at the opposing end. According to some embodiments, the substrate traffic may switch between one row of processing chambers (see arrow 1032 in FIG. 4B) to the other row of processing chambers (see arrow 1034 in FIG. 4B) as, for example, indicated by arrow 1294 in FIG. 4B when transported from one processing chamber to the subsequent processing chamber. Thereafter, the substrate can be moved, as indicated by arrow 1296 in FIG. 4B, from the subsequent processing chamber in the other row of the vacuum processing system back to the first row of the vacuum processing system when moved to a yet further, subsequent processing chamber. Accordingly, according to some embodiments, an exemplary substrate may switch rows of the vacuum processing system or part of the vacuum processing system (see arrows 1032 and 1034 in FOG: 32) back and forth.
[0052] Embodiments of the vacuum processing system 1100 shown and described with respect to FIGS. 4A and 4B provide a loading of substrates at one end of the hybrid system and unloading of substrates at another, for example, an opposing end of the hybrid system. Accordingly, two interfaces to a factory are provided for loading and unloading. Yet further, according to some embodiments, which can be combined with other embodiments described herein, a carrier on which a substrate has been transported from one end to the opposing end is returned within the vacuum processing system 1100 while being empty. A new substrate can be loaded at the loading and of the hybrid system.
[0053] As described above, a plurality of substrate are routed within a vacuum processing system according to embodiments described with respect to FIGS. 3A, 3B, 4A, and 4B. For high throughput and, thus, reduced cost of ownership of the vacuum processing system, the tact time should be as small as possible. The tact time can be inter alia delimited by the processing time and/or the time to transport a substrate from one processing chamber to subsequent processing chamber. Further, best throughput is provided if the maximum number of substrates are simultaneously processed in the vacuum processing system 1100. Accordingly, each processing chamber is loaded with a substrate for processing essentially during steady state process condition.
[0054] This results in the fact that the entire substrate traffic is jeopardized or interrupted if substrate transfer or substrate processing does not meet the tact time at any position in the vacuum processing system. According to some embodiments, which can be combined with other embodiments described herein, for substrate transfer the substrates, or carrier supporting the substrates, respectively are accelerated to speeds of 3 m/s or above for transportation by the substrate transportation arrangement. Accordingly, it seems beneficial to reduce the distance between adjacent or subsequent processing chambers. However, it has surprisingly been found that merely reducing the distance between adjacent or subsequent processing chambers does not result in best throughput values. According to embodiments of the present disclosure, two or more different distances between adjacent or subsequent processing chambers (in one row), that is two a more different distances between adjacent cluster chambers, for example, vacuum rotation chambers, are provided.
[0055] FIGS. 3 A and 3B show transfer chambers, which are, for example, provided between cluster chambers such as making rotation chambers. FIGS. 3 A and 3B shows first transfer chambers 1182 and a second transfer chambers 1184. Reducing the distance between adjacent or subsequent processing chambers as well as reducing the footprint of the vacuum processing system seems to suggest reduction of the lengths of the transfer chambers. It has surprisingly be found that a partial increase of the lengths of the transfer chambers improves the tact time of the vacuum processing system 1100. According to embodiments described herein, a vacuum processing system includes at least a first type of a transfer chamber, i.e. a first transfer chamber 1182, of a first length and the second type of the transfer chamber, i.e. a second transfer chamber 1184, having a second length different from the first length.
[0056] According to embodiment of the present disclosure, a vacuum processing system for depositing a plurality of layers on a substrate can be provided. The vacuum processing system includes a first transfer chamber having a first length and connected to a vacuum chamber; and a second transfer chamber connected to a vacuum chamber, the second transfer chamber having a second length smaller than the first length.
[0057] For example, according to further embodiments, which can be combined with other embodiments described herein, a vacuum processing system for processing a substrate includes a first processing chamber connected to a first cluster chamber; a first processing station for processing the substrate in the first processing chamber; a second processing chamber connected to a second cluster chamber; a first transfer chamber connected to the first cluster chamber and the second cluster chamber, the first transfer chamber has a first length extending between the first cluster chamber and the second cluster chamber, the first transfer chamber being sized to accommodate the substrate; a second transfer chamber connected to the second cluster chamber, the second transfer chamber having a second length smaller than the first length; a substrate transportation arrangement provided to route the substrate in an orientation deviating from vertical by 15° or less through the first processing chamber, the second processing chamber, the first cluster chamber, the second cluster chamber, the first transfer chamber, and the second transfer chamber.
[0058] The first transfer chamber having the first length allows to accommodate the substrate. A substrate can be parked in the first transfer chamber. Parking of the substrate allows for having a substrate readily available. This can reduce the overall tact time. The second transfer chamber having the second length smaller than the first length reduces the distance between adjacent or subsequent processing chambers. The second transfer chamber having the second length smaller than the first length additionally or alternatively reduces the footprint of the vacuum processing system.
[0059] Beyond the above, having two types of transfer chambers having different lengths allows for an adaptation of the footprint to the structure of a factory hall, which may typically be a predetermined environment. FIGS. 3A and 3B show pillars 1020. Pillars 1020 have previously been described with respect to FIG. 1 and FIG. 2. The pillars are a boundary condition provided by the fabrication hall and are defined, for example, by considerations of structural engineering calculations. Having two types of transfer chambers with different lengths further allows for adaptation of the vacuum processing system to a fabrication hall. Extending the length of a transfer chamber allows for having a pillar 1020 between two processing chambers, which are adjacent in one row and allows for providing a parked position.
[0060] Embodiments of the present disclosure surprisingly result in a combination of advantages including the reduction of the footprint, the reduction of the tact time, as well as adaptation to structural conditions in a fabrication hall.
[0061] According to yet further features, modifications, and embodiments of the present disclosure, the footprint of the vacuum processing system, particular of a vacuum processing system providing five or more, or even 10 or more layers in one system can be reduced by having the substrates, particularly large area substrates, in an essentially vertical orientation.
[0062] An“essentially vertical orientation” as used herein may be understood as an orientation with a deviation of 15° or less, 10° or less, particularly 5° or less from a vertical orientation, i.e. from the gravity vector. For example, an angle between a main surface of a substrate (or mask device) and the gravity vector may be between +10° and -10°, particularly between 0° and -5°. In some embodiments, the orientation of the substrate (or mask device) may not be exactly vertical during transport and/or during deposition, but slightly inclined with respect to the vertical axis, e.g. by an inclination angle between 0° and -5°, particularly between -1° and -5°. A negative angle refers to an orientation of the substrate (or mask device) wherein the substrate (or mask device) is inclined downward. A deviation of the substrate orientation from the gravity vector during deposition may be beneficial and might result in a more stable deposition process, or a facing down orientation might be suitable for reducing particles on the substrate during deposition. However, also an exactly vertical orientation during transport and/or during deposition is possible.
[0063] For increasing substrate sizes of large area substrates, wherein substrate sizes may typically increase in generations (GEN), vertical orientation is beneficial as compared to a horizontal orientation due to the reduced footprint of a vacuum processing system. An essentially vertical orientation of a deposition process on a large area substrate with a fine metal mask (FFM) is further unexpected in the sense that gravity acts along the surface of the fine metal mask in a vertical orientation. A pixel positioning and alignment in the micron range is more complicated for vertical orientation as compared to a horizontal orientation. Accordingly, concepts developed for horizontal vacuum deposition systems may not be transfer to vertical vacuum deposition systems for large area systems, particularly vacuum deposition systems utilizing a FFM.
[0064] The embodiments described herein can be utilized for inspecting large area coated substrates, e.g., for manufactured displays. The substrates or substrate receiving areas for which the apparatuses and methods described herein are configured can be large area substrates having a size of e.g. 1 m2 or above. For example, a large area substrate or carrier can be GEN 4.5, which corresponds to about 0.67 m2 substrates (0.73x0.92m), GEN 5, which corresponds to about 1.4 m2 substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m2 substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7m2 substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m2 substrates (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented. . For example, for OLED display manufacturing, half sizes of the above mentioned substrate generations, including GEN 6, can be coated by evaporation of an apparatus for evaporating material. The half sizes of the substrate generation may result from some processes running on a full substrate size, and subsequent processes running on half of a substrate previously processed.
[0065] The term“substrate” as used herein may particularly embrace substantially inflexible substrates, e.g., a wafer, slices of transparent crystal such as sapphire or the like, or a glass plate. However, the present disclosure is not limited thereto and the term“substrate” may embrace flexible substrates such as a web or a foil. The term “substantially inflexible” is understood to distinguish over“flexible”. Specifically, a substantially inflexible substrate can have a certain degree of flexibility, e.g. a glass plate having a thickness of 0.5 mm or below, wherein the flexibility of the substantially inflexible substrate is small in comparison to the flexible substrates.
[0066] A substrate may be made of any material suitable for material deposition. For instance, the substrate may be made of a material selected from the group consisting of glass (for instance soda-lime glass, borosilicate glass etc.), metal, polymer, ceramic, compound materials, carbon fiber materials, metal or any other material or combination of materials which can be coated by a deposition process.
[0067] According to yet further embodiments of modifications, which can be combined with other embodiments described herein, a vacuum processing system for large area substrates in vertical or essentially vertical orientation as described herein can further include carriers for supporting substrates during transportation within the vacuum system. Particularly for large area substrates, glass breakage within the vacuum processing system may be reduced by utilizing carriers. Accordingly, the substrate may maintain on a carrier for subsequent processing steps. For example, a substrate can be loaded on the carrier directly after or at entering the vacuum processing system and can be unloaded from the same carrier directly before or at leaving the vacuum processing system. [0068] The vacuum processing system according to embodiments described herein may further include the substrate transportation arrangement configured for transporting substrates on carriers. The substrate transportation arrangement can include a carrier transportation system. As shown in FIG. 3A, carriers may be transported along transportation paths 1171, 1172, 1174, 1173 and may also be provided on transportation positions, such as transportation position 1175. The carrier transportation system may include a holding system, e.g. a magnetic levitation system, for lifting and holding the carriers, and a driving system for moving the carriers along tracks along a carrier transportation path. For example, the substrate transportation arrangement may include two substrate rotation positions in the vacuum rotation chamber.
[0069] A vacuum processing system according to an embodiment of the present disclosure, which can be combined with other embodiments of the present disclosure, can include a vacuum chamber for moving a substrate by an angle, i.e. a vacuum swing module, a cluster chamber, e.g. a vacuum rotation chamber, and a buffer chamber between the vacuum chamber and the cluster chamber. The buffer chamber includes one substrate transportation path and at least a further substrate transportation position. A substrate can wait or can be parked in the buffer chamber, for example at the transportation position 1175 awaiting unloading through the vacuum swing module. For a combination of a cluster chamber and a vacuum swing module, an intermediate buffer chamber having the capability to accommodate two or more substrates can further improve the tact time.
[0070] The term“carrier” as used herein may particularly refer to a“substrate carrier” configured to hold a substrate during transport along a carrier transportation path, e.g. along a substrate carrier track. In some embodiments, the substrate may be held at the carrier in a non-horizontal orientation, particularly in an essentially vertical orientation. The term“carrier” as used herein may refer to a“substrate carrier” configured to hold a substrate during the transport along a transportation path, e.g. along a substrate carrier track.
[0071] A carrier may include a carrier body with a holding surface configured to hold a substrate or a mask device, particularly in a non-horizontal orientation, more particularly in an essentially vertical orientation. In some embodiments, the carrier body may include a guided portion configured to be guided along a carrier transportation path. For example, the carrier may be held by a holding device, e.g. by a magnetic levitation system, and the carrier may be moved by a driving device, e.g. along a mask carrier track or along a substrate carrier track. For example, a substrate may be held at a substrate carrier by a chucking device, e.g. by an electrostatic chuck and/or by a magnetic chuck. Other types of chucking devices may be used. “Transporting”,“moving”,“routing”,“replacing” or“rotating” a substrate or a mask device as used herein may refer to a respective movement of a carrier which holds a, particularly in a non-horizontal orientation, more particularly in an essentially vertical orientation.
[0072] In some embodiments, the substrate carrier is transported by a transportation system, which may include a magnetic levitation system. For example, a magnetic levitation system may be provided so that at least a part of the weight of the substrate carrier may be carried by the magnetic levitation system. The substrate carrier can be guided essentially contactlessly along the substrate carrier tracks through the vacuum processing system. A drive for moving the carrier along the substrate carrier tracks may be provided. Contactless levitation reduces particle generation in the vacuum processing system. This may be particularly advantageous for manufacturing of OLED devices.
[0073] The term“carrier” as used herein may refer to a“mask carrier” configured to hold a mask device during the transport along a transportation path, e.g. along a mask carrier track. In some embodiments, the mask device may be held at the carrier in a non-horizontal orientation, particularly in an essentially vertical orientation.
[0074] For example, a substrate may be held at a substrate carrier by a chucking device, e.g. by an electrostatic chuck and/or by a magnetic chuck. For example, a mask device may be held at a mask carrier by a chucking device, e.g. an electrostatic chuck and/or a magnetic chuck. Other types of chucking devices may be used.
[0075] According to yet further embodiments, which can be combined with other embodiments described herein, layer deposition on essentially vertically oriented large area substrates may be beneficially be provided by deposition sources, for example, evaporation sources 1180 (see, e.g., FIG. 3A), therein the evaporation source can be provided as a line source. The line source can be moved along the surface of the substrate to deposit material on, for example, the rectangular large area substrate. According to yet further embodiments, two or more, for example, three line sources can be provided for a deposition source. According to some embodiments, which can be combined with other embodiments described herein, organic materials may be co evaporated, wherein two or more organic materials form one material layer.
[0076] A deposition source, e.g. a vapor source configured for directing evaporated material toward one or more substrates, is typically arranged in a processing chamber or deposition module. For example, the deposition source may be movable along a source transportation track which may be provided in the processing chamber. The deposition source may linearly move along the source transportation track while directing the evaporated material toward one or more substrates.
[0077] In some embodiments, which may be combined with other embodiments described herein, a processing chamber or a deposition module may include two deposition areas, i.e. a first deposition area for arranging a first substrate and a second deposition area for arranging a second substrate. The first deposition area may be arranged opposite the second deposition area in the deposition module. The deposition source may be configured to subsequently direct evaporated material toward the first substrate arranged in the first deposition area and toward the second substrate arranged in the second deposition area. For example, an evaporation direction of the deposition source may be reversible, e.g. by rotating at least a part of the deposition source, e.g. by an angle of 180°.
[0078] According to embodiments described herein, a first transfer chamber having a first length can be connected to a vacuum cluster chamber. Further, a second transfer chamber can be connected to a vacuum cluster chamber, the second transfer chamber having a second length smaller than the first length.
[0079] FIG. 5A shows a portion of the vacuum processing system in a side view. A first transfer chamber 1182 having a first length is provided between two adjacent cluster chambers, for example, vacuum rotation chambers 1130. The first length corresponds to a size, such that the substrate having a substrate generation, for which the vacuum processing system is manufactured, can be provided within the first transfer chamber. A substrate or a substrate carrier does not necessarily extend into one of the cluster chambers when provided in the first transfer chamber. A mask or a mask carrier does not necessarily extend into one of the cluster chambers when provided in the first transfer chamber.
[0080] FIG. 5 A shows exemplarily the mask carrier outline 1310 of a mask carrier in dotted lines. FIG. 5A shows exemplarily the substrate carrier outline 1312 of a substrate carrier in dashed lines. Both, the mask carrier and the substrate carrier can be provided entirely within the first transfer chamber 1182. Accordingly, a mask carrier as well as a substrate carrier can be provided in the first transfer chamber and both adjacent vacuum rotation chambers can be rotated. The rotation is not blocked by a mask carrier or a substrate carrier extending in the vacuum rotation chamber.
[0081] FIG. 5B shows a top view of a portion of the vacuum processing system. The first transfer chamber is provided between adjacent cluster chambers, for example vacuum rotation chambers 1130. A portion of a substrate transportation arrangement is shown as a substrate transportation unit 1320. The substrate transportation unit 1320 is configured for transportation of a substrate carrier through the transfer chamber. The substrate transportation arrangement may include two substrate transportation paths. Two substrate transportation units 1320 are provided to generate two substrate carrier paths. A portion of a mask transportation arrangement is shown as a mask transportation unit 1322. The mask transportation unit 1322 is configured for transportation of a mask carrier through the transfer chamber. Two mask transportation units 1322 are provided to generate two mask carrier paths. The substrate transportation unit and/or the mask transportation unit can be provided with a levitation element and a drive element. The levitation element may contactlessly support a carrier. The drive element May contactlessly drive a carrier along the path.
[0082] According to some embodiments of the present disclosure, which can be combined with other embodiments, one or more substrate park positions 1330 can be provided in the first transfer chamber. In light of the length of the first transfer chamber, the substrate carrier can be parked in the first transfer chamber. The substrate carrier can be parked without deteriorating a rotation function of the vacuum rotation module adjacent to the first transfer chamber. The first transfer chamber being sized to accommodate the substrate carrier.
[0083] FIG. 6 shows a second transfer chamber 1184 having a second length that is shorter than the length of the first transfer chamber 1182 shown in FIGS. 5 A and 5B. The second length of the second transfer chamber is such that the mask carrier outline 1310 of a mask carrier shown dotted and a substrate carrier outline 1312 shown in dashed lines extends beyond opposing sides of the second transfer chamber. Accordingly, the footprint of the vacuum processing system can be reduced having shorter second transfer chambers. According to some embodiments, which can be combined with other embodiments described herein, the second length of the second transfer chamber is smaller than a horizontal dimension of the substrate.
[0084] FIG. 7 illustrates a flowchart of a method of operating a vacuum processing system according to embodiments of the present disclosure. As described above, vacuum processing system can be operated having tact time. For example, the tact time can have a duration of a time period, wherein the time period can be defined by the length of a deposition process of depositing the material layer. According to some embodiments, a substrate can be accommodated, for example, parked within the first transfer chamber. For example, the first transfer chamber can be a transfer chamber 1182 as shown in FIG. 5 A. The first transfer chamber can have a length sufficiently large to accommodate the substrate or the substrate carrier, respectively. As indicated by box 702, a substrate can be parked in the first transfer chamber during a first time period corresponding to the tact time. Further, as indicated by box 704, another substrate can be transferred through a second transfer chamber during the first time period, i.e. the same time period. Particularly, the second transfer chamber can have a second length shorter than the first length of the first transfer chamber. For example, the second transfer chamber can have a length shorter than the corresponding dimension of a substrate carrier or a mask carrier, respectively.
[0085] According to yet further embodiments, which can be combined with other embodiments of the present disclosure, yet further substrate may be moved past the park substrate in the first transfer chamber during the same, first time period (see box 706). For example, the park substrate can be provided in a substrate park positions 1330 as shown in FIG. 5A. Yet further, as indicated by box 708 yet further substrate can be processed in the same, first time period. [0086] While the foregoing is directed to embodiments of the disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

1. A vacuum processing system for processing a substrate, comprising: a first processing chamber connected to a first cluster chamber; a first processing station for processing the substrate in the first processing chamber; a second processing chamber connected to a second cluster chamber; a first transfer chamber connected to the first cluster chamber and the second cluster chamber, the first transfer chamber has a first length extending between the first cluster chamber and the second cluster chamber, the first transfer chamber being sized to accommodate the substrate; a second transfer chamber connected to the second cluster chamber, the second transfer chamber having a second length smaller than the first length; and a substrate transportation arrangement provided to route the substrate in an orientation deviating from vertical by 15° or less through the first processing chamber, the second processing chamber, the first cluster chamber, the second cluster chamber, the first transfer chamber, and the second transfer chamber.
2. The vacuum processing system according to claim 1, wherein the second length of the second transfer chamber is smaller than a horizontal dimension of the substrate.
3. The vacuum processing system according to any of claims 1 to 2, wherein the first transfer chamber is configured to park the substrate.
4. The vacuum processing system according to any of claims 1 to 3, wherein substrate transportation arrangement comprises two substrate transportation paths in the first processing chamber.
5. The vacuum processing system according to any of claims 1 to 4, wherein the first cluster chamber is a first vacuum rotation chamber, and wherein the substrate transportation arrangement comprises two substrate rotation positions in the first vacuum rotation chamber.
6. The vacuum processing system according to any of claims 1 to 5, wherein the substrate transportation arrangement comprises two substrate transfer paths in the first transfer chamber.
7. The vacuum processing system according to claim 6, wherein the substrate transportation arrangement comprises a substrate park position adjacent the two substrate transfer paths.
8. The vacuum processing system according to any of claims 6 to 7, further comprising: a mask transportation arrangement configured to route a mask in one at least one processing chamber of the first processing chamber and the second processing chamber.
9. A vacuum processing system for depositing a plurality of layers on a substrate, comprising: a first transfer chamber having a first length and connected to a vacuum chamber; and a second transfer chamber connected to a vacuum chamber, the second transfer chamber having a second length smaller than the first length.
10. The vacuum processing system according to claim 9, wherein the vacuum chamber is a vacuum rotation chamber having a rotor configured to move the substrate by an angle around a vertical axis.
11. The vacuum processing system according to any of claims 9 to 10, wherein the second transfer chamber has a length smaller than at least one dimension of the substrate.
12. The vacuum processing system according to any of claims 9 to 11, wherein the first transfer chamber is configured to park the substrate.
13. A method of operating a vacuum processing system, comprising: depositing a material layer on a first substrate during a first time period; parking a second substrate in a first transfer chamber during the first time period; and transferring a third substrate in a second transfer chamber during the first time period.
14. The method of claim 13, wherein the first time period starts with start of depositing the material layer and the first time period ends with end of the depositing the materials layer.
15. The method of any of claims 13 to 14, wherein the second transfer chamber has a second length smaller than a first length of the first transfer chamber.
16. The method of any of claims 13 to 15, further comprising: moving a fourth substrate past the second substrate in the first transfer chamber during the first time period.
PCT/EP2018/055925 2018-03-09 2018-03-09 Vacuum processing system and method of operating a vacuum processing system WO2019170252A1 (en)

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