KR101950067B1 - 광전 변환 장치 및 광전 변환 시스템 - Google Patents

광전 변환 장치 및 광전 변환 시스템 Download PDF

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KR101950067B1
KR101950067B1 KR1020160037361A KR20160037361A KR101950067B1 KR 101950067 B1 KR101950067 B1 KR 101950067B1 KR 1020160037361 A KR1020160037361 A KR 1020160037361A KR 20160037361 A KR20160037361 A KR 20160037361A KR 101950067 B1 KR101950067 B1 KR 101950067B1
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transistor
gate
current
circuit
drain
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KR20160117270A (ko
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다이스케 요시다
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캐논 가부시끼가이샤
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    • H04N5/3765—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H04N5/37455—
    • H04N5/378—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Amplifiers (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020160037361A 2015-03-30 2016-03-29 광전 변환 장치 및 광전 변환 시스템 Active KR101950067B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2015-070196 2015-03-30
JP2015070196A JP6407083B2 (ja) 2015-03-30 2015-03-30 光電変換装置、および、光電変換システム

Publications (2)

Publication Number Publication Date
KR20160117270A KR20160117270A (ko) 2016-10-10
KR101950067B1 true KR101950067B1 (ko) 2019-02-19

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Country Status (8)

Country Link
US (3) US9813649B2 (enExample)
EP (1) EP3076663B1 (enExample)
JP (1) JP6407083B2 (enExample)
KR (1) KR101950067B1 (enExample)
CN (1) CN106027923B (enExample)
BR (1) BR102016007030A2 (enExample)
RU (1) RU2638914C2 (enExample)
TW (1) TWI592018B (enExample)

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CN112218015B (zh) 2015-09-30 2024-02-23 株式会社尼康 摄像元件、摄像装置及电子设备
CN113225496A (zh) 2016-03-24 2021-08-06 株式会社尼康 摄像元件和摄像装置
CN109983704A (zh) * 2016-12-21 2019-07-05 奥林巴斯株式会社 逐次比较型a/d转换装置、摄像装置、内窥镜以及设定方法
WO2018116539A1 (ja) * 2016-12-21 2018-06-28 オリンパス株式会社 撮像素子、撮像装置および内視鏡
CN106982337B (zh) * 2017-04-27 2019-07-23 京东方科技集团股份有限公司 一种cmos图像传感器及其像素电路、驱动方法
JP2019068267A (ja) * 2017-09-29 2019-04-25 キヤノン株式会社 撮像装置、撮像システム、移動体
US10447290B2 (en) * 2017-12-11 2019-10-15 Texas Instruments Incorporated Reduced noise dynamic comparator for a successive approximation register analog-to-digital converter
WO2019215973A1 (ja) * 2018-05-11 2019-11-14 ソニーセミコンダクタソリューションズ株式会社 増幅器
US11463636B2 (en) 2018-06-27 2022-10-04 Facebook Technologies, Llc Pixel sensor having multiple photodiodes
US10931884B2 (en) 2018-08-20 2021-02-23 Facebook Technologies, Llc Pixel sensor having adaptive exposure time
US11956413B2 (en) 2018-08-27 2024-04-09 Meta Platforms Technologies, Llc Pixel sensor having multiple photodiodes and shared comparator
TWI835869B (zh) * 2018-10-24 2024-03-21 日商索尼半導體解決方案公司 Ａ／ｄ轉換器及電子機器
JP7222736B2 (ja) * 2019-02-04 2023-02-15 キヤノン株式会社 撮像素子及びその制御方法、及び撮像装置
JP7365775B2 (ja) 2019-02-21 2023-10-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
CN110661989A (zh) * 2019-03-12 2020-01-07 神盾股份有限公司 用于缓冲感光信号的缓冲电路及其图像感测器
US11218660B1 (en) 2019-03-26 2022-01-04 Facebook Technologies, Llc Pixel sensor having shared readout structure
CN114641987A (zh) * 2019-11-07 2022-06-17 株式会社半导体能源研究所 摄像装置、其工作方法及电子设备
JP2021097337A (ja) * 2019-12-18 2021-06-24 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、撮像装置
US11910114B2 (en) 2020-07-17 2024-02-20 Meta Platforms Technologies, Llc Multi-mode image sensor
US12309518B2 (en) * 2020-08-20 2025-05-20 Sony Semiconductor Solutions Corporation Solid-state imaging element
WO2022102433A1 (ja) * 2020-11-12 2022-05-19 ソニーセミコンダクタソリューションズ株式会社 撮像装置
TW202231054A (zh) * 2021-01-14 2022-08-01 日商索尼半導體解決方案公司 攝像裝置及電子機器
CN114124004B (zh) * 2021-11-23 2024-06-21 上海天马微电子有限公司 一种信号处理电路及信号处理装置
WO2023174655A1 (en) * 2022-03-18 2023-09-21 Sony Semiconductor Solutions Corporation Image sensor array with ramp generator and comparing circuit
CN115484419B (zh) * 2022-08-31 2025-01-28 成都微光集电科技有限公司 第一级放大电路、比较器、读出电路及图像传感器
CN117199092B (zh) * 2023-08-21 2024-04-16 中山大学 一种宽摆幅像素结构、图像传感器

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Also Published As

Publication number Publication date
TWI592018B (zh) 2017-07-11
US10142573B2 (en) 2018-11-27
US20190052824A1 (en) 2019-02-14
EP3076663A3 (en) 2016-12-28
JP2016192594A (ja) 2016-11-10
RU2016111612A (ru) 2017-10-02
EP3076663B1 (en) 2019-08-21
EP3076663A2 (en) 2016-10-05
CN106027923B (zh) 2019-07-12
US20160295142A1 (en) 2016-10-06
US9813649B2 (en) 2017-11-07
TW201705755A (zh) 2017-02-01
BR102016007030A2 (pt) 2016-10-11
JP6407083B2 (ja) 2018-10-17
RU2638914C2 (ru) 2017-12-18
US20180041726A1 (en) 2018-02-08
CN106027923A (zh) 2016-10-12
KR20160117270A (ko) 2016-10-10

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