KR101948332B1 - 실질적인 폐쇄 루프 공정 및 시스템에 의한 다결정질 실리콘의 제조 - Google Patents

실질적인 폐쇄 루프 공정 및 시스템에 의한 다결정질 실리콘의 제조 Download PDF

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KR101948332B1
KR101948332B1 KR1020137010094A KR20137010094A KR101948332B1 KR 101948332 B1 KR101948332 B1 KR 101948332B1 KR 1020137010094 A KR1020137010094 A KR 1020137010094A KR 20137010094 A KR20137010094 A KR 20137010094A KR 101948332 B1 KR101948332 B1 KR 101948332B1
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hydrogen
trichlorosilane
silicon
delete delete
gas
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KR20130138357A (ko
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사티시 부사라푸
유에 후앙
푸니트 굽타
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코너 스타 리미티드
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Priority claimed from US12/910,553 external-priority patent/US8449848B2/en
Priority claimed from US12/910,540 external-priority patent/US20120100061A1/en
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C01B33/039—Purification by conversion of the silicon into a compound, optional purification of the compound, and reconversion into silicon

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Catalysts (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
KR1020137010094A 2010-10-22 2011-09-22 실질적인 폐쇄 루프 공정 및 시스템에 의한 다결정질 실리콘의 제조 Active KR101948332B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12/910,540 2010-10-22
US12/910,553 US8449848B2 (en) 2010-10-22 2010-10-22 Production of polycrystalline silicon in substantially closed-loop systems
US12/910,553 2010-10-22
US12/910,540 US20120100061A1 (en) 2010-10-22 2010-10-22 Production of Polycrystalline Silicon in Substantially Closed-loop Processes
PCT/US2011/052691 WO2012054170A1 (en) 2010-10-22 2011-09-22 Production of polycrystalline silicon in substantially closed-loop processes and systems

Publications (2)

Publication Number Publication Date
KR20130138357A KR20130138357A (ko) 2013-12-18
KR101948332B1 true KR101948332B1 (ko) 2019-02-14

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KR1020137010094A Active KR101948332B1 (ko) 2010-10-22 2011-09-22 실질적인 폐쇄 루프 공정 및 시스템에 의한 다결정질 실리콘의 제조

Country Status (7)

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EP (1) EP2630081B1 (https=)
JP (1) JP5946835B2 (https=)
KR (1) KR101948332B1 (https=)
CN (2) CN103153855A (https=)
BR (1) BR112013008586A2 (https=)
TW (2) TW201329280A (https=)
WO (1) WO2012054170A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015111886A1 (ko) * 2014-01-24 2015-07-30 한화케미칼 주식회사 폐가스의 정제방법 및 정제장치
KR101515117B1 (ko) * 2014-01-24 2015-04-24 한화케미칼 주식회사 폐가스의 정제방법 및 정제장치
KR101452354B1 (ko) * 2014-01-24 2014-10-22 한화케미칼 주식회사 폐가스의 정제방법 및 정제장치
CN104003402B (zh) * 2014-05-30 2016-08-24 中国恩菲工程技术有限公司 三氯氢硅的提纯方法
KR102009929B1 (ko) * 2015-09-15 2019-08-12 주식회사 엘지화학 트리클로로실란 제조방법
EP3447028A4 (en) * 2016-04-21 2019-11-06 Tokuyama Corporation METHOD FOR PRODUCING METAL POWDER
DE102017125232A1 (de) * 2017-10-27 2019-05-02 Nexwafe Gmbh Verfahren und Vorrichtung zur kontinuierlichen Gasphasenabscheidung von Silizium auf Substraten

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US4092446A (en) * 1974-07-31 1978-05-30 Texas Instruments Incorporated Process of refining impure silicon to produce purified electronic grade silicon
GB2028289B (en) * 1978-08-18 1982-09-02 Schumacher Co J C Producing silicon
US4676967A (en) 1978-08-23 1987-06-30 Union Carbide Corporation High purity silane and silicon production
DE3024319C2 (de) * 1980-06-27 1983-07-21 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Kontinuierliches Verfahren zur Herstellung von Trichlorsilan
US4526769A (en) 1983-07-18 1985-07-02 Motorola, Inc. Trichlorosilane production process
US5871705A (en) 1996-09-19 1999-02-16 Tokuyama Corporation Process for producing trichlorosilane
JPH1149508A (ja) * 1997-06-03 1999-02-23 Tokuyama Corp 多結晶シリコンの廃棄物の少ない製造方法
US6277194B1 (en) * 1999-10-21 2001-08-21 Applied Materials, Inc. Method for in-situ cleaning of surfaces in a substrate processing chamber
NO20033207D0 (no) * 2002-07-31 2003-07-15 Per Kristian Egeberg Fremgangsmåte og reaktor for fremstilling av höyrent silisium, samt anvendelse av fremgangsmåten og reaktoren ved fremstilling av höyrentsilisium fra uraffinert silisium
CN101460398B (zh) * 2006-04-13 2012-08-29 卡伯特公司 通过闭合环路方法生产硅
US7935327B2 (en) * 2006-08-30 2011-05-03 Hemlock Semiconductor Corporation Silicon production with a fluidized bed reactor integrated into a siemens-type process
JP5435188B2 (ja) * 2006-11-14 2014-03-05 三菱マテリアル株式会社 多結晶シリコンの製造方法および多結晶シリコン製造設備
CN101497442B (zh) * 2008-01-31 2012-07-04 桑中生 一种多晶硅的制备方法
WO2010002815A2 (en) * 2008-06-30 2010-01-07 Memc Electronic Materials, Inc. Fluidized bed reactor systems and methods for reducing the deposition of silicon on reactor walls
US8187361B2 (en) * 2009-07-02 2012-05-29 America Air Liquide, Inc. Effluent gas recovery system in polysilicon and silane plants
CN102030329B (zh) * 2009-09-29 2012-10-03 重庆大全新能源有限公司 一种多晶硅生产装置及工艺
DE102010000981A1 (de) * 2010-01-18 2011-07-21 Evonik Degussa GmbH, 45128 Closed loop-Verfahren zur Herstellung von Trichlorsilan aus metallurgischem Silicium
CN102180467B (zh) * 2010-12-24 2012-12-26 江苏中能硅业科技发展有限公司 Gcl法多晶硅生产方法

Also Published As

Publication number Publication date
TWI403610B (zh) 2013-08-01
EP2630081B1 (en) 2016-04-20
JP5946835B2 (ja) 2016-07-06
WO2012054170A1 (en) 2012-04-26
TW201221685A (en) 2012-06-01
CN107555438A (zh) 2018-01-09
BR112013008586A2 (pt) 2017-07-25
KR20130138357A (ko) 2013-12-18
EP2630081A1 (en) 2013-08-28
TW201329280A (zh) 2013-07-16
JP2013540095A (ja) 2013-10-31
CN103153855A (zh) 2013-06-12

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