CN103153855A - 在基本闭环的方法和系统中制备多晶硅 - Google Patents

在基本闭环的方法和系统中制备多晶硅 Download PDF

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Publication number
CN103153855A
CN103153855A CN201180049322XA CN201180049322A CN103153855A CN 103153855 A CN103153855 A CN 103153855A CN 201180049322X A CN201180049322X A CN 201180049322XA CN 201180049322 A CN201180049322 A CN 201180049322A CN 103153855 A CN103153855 A CN 103153855A
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CN
China
Prior art keywords
trichlorosilane
hydrogen
gas
silicon tetrachloride
hydrogenchloride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201180049322XA
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English (en)
Chinese (zh)
Inventor
S·布萨拉普
Y·黄
P·古普塔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/910,553 external-priority patent/US8449848B2/en
Priority claimed from US12/910,540 external-priority patent/US20120100061A1/en
Application filed by SunEdison Inc filed Critical SunEdison Inc
Priority to CN201710761183.2A priority Critical patent/CN107555438A/zh
Publication of CN103153855A publication Critical patent/CN103153855A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C01B33/039—Purification by conversion of the silicon into a compound, optional purification of the compound, and reconversion into silicon

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Catalysts (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
CN201180049322XA 2010-10-22 2011-09-22 在基本闭环的方法和系统中制备多晶硅 Pending CN103153855A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710761183.2A CN107555438A (zh) 2010-10-22 2011-09-22 在基本闭环的方法和系统中制备多晶硅

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12/910,540 2010-10-22
US12/910,553 US8449848B2 (en) 2010-10-22 2010-10-22 Production of polycrystalline silicon in substantially closed-loop systems
US12/910,553 2010-10-22
US12/910,540 US20120100061A1 (en) 2010-10-22 2010-10-22 Production of Polycrystalline Silicon in Substantially Closed-loop Processes
PCT/US2011/052691 WO2012054170A1 (en) 2010-10-22 2011-09-22 Production of polycrystalline silicon in substantially closed-loop processes and systems

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201710761183.2A Division CN107555438A (zh) 2010-10-22 2011-09-22 在基本闭环的方法和系统中制备多晶硅

Publications (1)

Publication Number Publication Date
CN103153855A true CN103153855A (zh) 2013-06-12

Family

ID=45975555

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201180049322XA Pending CN103153855A (zh) 2010-10-22 2011-09-22 在基本闭环的方法和系统中制备多晶硅
CN201710761183.2A Pending CN107555438A (zh) 2010-10-22 2011-09-22 在基本闭环的方法和系统中制备多晶硅

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201710761183.2A Pending CN107555438A (zh) 2010-10-22 2011-09-22 在基本闭环的方法和系统中制备多晶硅

Country Status (7)

Country Link
EP (1) EP2630081B1 (https=)
JP (1) JP5946835B2 (https=)
KR (1) KR101948332B1 (https=)
CN (2) CN103153855A (https=)
BR (1) BR112013008586A2 (https=)
TW (2) TW201329280A (https=)
WO (1) WO2012054170A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104003402A (zh) * 2014-05-30 2014-08-27 中国恩菲工程技术有限公司 三氯氢硅的提纯方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015111886A1 (ko) * 2014-01-24 2015-07-30 한화케미칼 주식회사 폐가스의 정제방법 및 정제장치
KR101515117B1 (ko) * 2014-01-24 2015-04-24 한화케미칼 주식회사 폐가스의 정제방법 및 정제장치
KR101452354B1 (ko) * 2014-01-24 2014-10-22 한화케미칼 주식회사 폐가스의 정제방법 및 정제장치
KR102009929B1 (ko) * 2015-09-15 2019-08-12 주식회사 엘지화학 트리클로로실란 제조방법
EP3447028A4 (en) * 2016-04-21 2019-11-06 Tokuyama Corporation METHOD FOR PRODUCING METAL POWDER
DE102017125232A1 (de) * 2017-10-27 2019-05-02 Nexwafe Gmbh Verfahren und Vorrichtung zur kontinuierlichen Gasphasenabscheidung von Silizium auf Substraten

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2028289A (en) * 1978-08-18 1980-03-05 Schumacher Co J C Producing silicon
DE3024319A1 (de) * 1980-06-27 1982-01-28 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Kontinuierliches verfahren zur herstellung von trichlorsilan
WO2004011372A1 (en) * 2002-07-31 2004-02-05 Sørlandets Teknologisenter As Production of high grade silicon, reactor, particle recapture tower and use of the aforementioned
CN101497442A (zh) * 2008-01-31 2009-08-05 桑中生 一种多晶硅的制备方法
CN101541678A (zh) * 2006-08-30 2009-09-23 赫姆洛克半导体公司 用集成到西门子型工艺中的流化床反应器生产硅

Family Cites Families (13)

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US4092446A (en) * 1974-07-31 1978-05-30 Texas Instruments Incorporated Process of refining impure silicon to produce purified electronic grade silicon
US4676967A (en) 1978-08-23 1987-06-30 Union Carbide Corporation High purity silane and silicon production
US4526769A (en) 1983-07-18 1985-07-02 Motorola, Inc. Trichlorosilane production process
US5871705A (en) 1996-09-19 1999-02-16 Tokuyama Corporation Process for producing trichlorosilane
JPH1149508A (ja) * 1997-06-03 1999-02-23 Tokuyama Corp 多結晶シリコンの廃棄物の少ない製造方法
US6277194B1 (en) * 1999-10-21 2001-08-21 Applied Materials, Inc. Method for in-situ cleaning of surfaces in a substrate processing chamber
CN101460398B (zh) * 2006-04-13 2012-08-29 卡伯特公司 通过闭合环路方法生产硅
JP5435188B2 (ja) * 2006-11-14 2014-03-05 三菱マテリアル株式会社 多結晶シリコンの製造方法および多結晶シリコン製造設備
WO2010002815A2 (en) * 2008-06-30 2010-01-07 Memc Electronic Materials, Inc. Fluidized bed reactor systems and methods for reducing the deposition of silicon on reactor walls
US8187361B2 (en) * 2009-07-02 2012-05-29 America Air Liquide, Inc. Effluent gas recovery system in polysilicon and silane plants
CN102030329B (zh) * 2009-09-29 2012-10-03 重庆大全新能源有限公司 一种多晶硅生产装置及工艺
DE102010000981A1 (de) * 2010-01-18 2011-07-21 Evonik Degussa GmbH, 45128 Closed loop-Verfahren zur Herstellung von Trichlorsilan aus metallurgischem Silicium
CN102180467B (zh) * 2010-12-24 2012-12-26 江苏中能硅业科技发展有限公司 Gcl法多晶硅生产方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2028289A (en) * 1978-08-18 1980-03-05 Schumacher Co J C Producing silicon
DE3024319A1 (de) * 1980-06-27 1982-01-28 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Kontinuierliches verfahren zur herstellung von trichlorsilan
WO2004011372A1 (en) * 2002-07-31 2004-02-05 Sørlandets Teknologisenter As Production of high grade silicon, reactor, particle recapture tower and use of the aforementioned
CN101541678A (zh) * 2006-08-30 2009-09-23 赫姆洛克半导体公司 用集成到西门子型工艺中的流化床反应器生产硅
CN101497442A (zh) * 2008-01-31 2009-08-05 桑中生 一种多晶硅的制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104003402A (zh) * 2014-05-30 2014-08-27 中国恩菲工程技术有限公司 三氯氢硅的提纯方法
CN104003402B (zh) * 2014-05-30 2016-08-24 中国恩菲工程技术有限公司 三氯氢硅的提纯方法

Also Published As

Publication number Publication date
TWI403610B (zh) 2013-08-01
EP2630081B1 (en) 2016-04-20
JP5946835B2 (ja) 2016-07-06
WO2012054170A1 (en) 2012-04-26
KR101948332B1 (ko) 2019-02-14
TW201221685A (en) 2012-06-01
CN107555438A (zh) 2018-01-09
BR112013008586A2 (pt) 2017-07-25
KR20130138357A (ko) 2013-12-18
EP2630081A1 (en) 2013-08-28
TW201329280A (zh) 2013-07-16
JP2013540095A (ja) 2013-10-31

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Application publication date: 20130612

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