BR112013008586A2 - produção de silicone policristalino nos processos e sistemas de circuito substancialmente fechados - Google Patents

produção de silicone policristalino nos processos e sistemas de circuito substancialmente fechados

Info

Publication number
BR112013008586A2
BR112013008586A2 BR112013008586A BR112013008586A BR112013008586A2 BR 112013008586 A2 BR112013008586 A2 BR 112013008586A2 BR 112013008586 A BR112013008586 A BR 112013008586A BR 112013008586 A BR112013008586 A BR 112013008586A BR 112013008586 A2 BR112013008586 A2 BR 112013008586A2
Authority
BR
Brazil
Prior art keywords
substantially closed
systems
closed circuit
polycrystalline silicon
circuit processes
Prior art date
Application number
BR112013008586A
Other languages
English (en)
Portuguese (pt)
Inventor
Gupta Puneet
Bhusarapu Satish
Huang Yue
Original Assignee
Memc Electronic Mat Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/910,553 external-priority patent/US8449848B2/en
Priority claimed from US12/910,540 external-priority patent/US20120100061A1/en
Application filed by Memc Electronic Mat Inc filed Critical Memc Electronic Mat Inc
Publication of BR112013008586A2 publication Critical patent/BR112013008586A2/pt

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/021Preparation
    • C01B33/027Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/021Preparation
    • C01B33/027Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/037Purification
    • C01B33/039Purification by conversion of the silicon into a compound, optional purification of the compound, and reconversion into silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Catalysts (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
BR112013008586A 2010-10-22 2011-09-22 produção de silicone policristalino nos processos e sistemas de circuito substancialmente fechados BR112013008586A2 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/910,553 US8449848B2 (en) 2010-10-22 2010-10-22 Production of polycrystalline silicon in substantially closed-loop systems
US12/910,540 US20120100061A1 (en) 2010-10-22 2010-10-22 Production of Polycrystalline Silicon in Substantially Closed-loop Processes
PCT/US2011/052691 WO2012054170A1 (en) 2010-10-22 2011-09-22 Production of polycrystalline silicon in substantially closed-loop processes and systems

Publications (1)

Publication Number Publication Date
BR112013008586A2 true BR112013008586A2 (pt) 2017-07-25

Family

ID=45975555

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112013008586A BR112013008586A2 (pt) 2010-10-22 2011-09-22 produção de silicone policristalino nos processos e sistemas de circuito substancialmente fechados

Country Status (7)

Country Link
EP (1) EP2630081B1 (https=)
JP (1) JP5946835B2 (https=)
KR (1) KR101948332B1 (https=)
CN (2) CN103153855A (https=)
BR (1) BR112013008586A2 (https=)
TW (2) TW201329280A (https=)
WO (1) WO2012054170A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015111886A1 (ko) * 2014-01-24 2015-07-30 한화케미칼 주식회사 폐가스의 정제방법 및 정제장치
KR101515117B1 (ko) * 2014-01-24 2015-04-24 한화케미칼 주식회사 폐가스의 정제방법 및 정제장치
KR101452354B1 (ko) * 2014-01-24 2014-10-22 한화케미칼 주식회사 폐가스의 정제방법 및 정제장치
CN104003402B (zh) * 2014-05-30 2016-08-24 中国恩菲工程技术有限公司 三氯氢硅的提纯方法
KR102009929B1 (ko) * 2015-09-15 2019-08-12 주식회사 엘지화학 트리클로로실란 제조방법
EP3447028A4 (en) * 2016-04-21 2019-11-06 Tokuyama Corporation METHOD FOR PRODUCING METAL POWDER
DE102017125232A1 (de) * 2017-10-27 2019-05-02 Nexwafe Gmbh Verfahren und Vorrichtung zur kontinuierlichen Gasphasenabscheidung von Silizium auf Substraten

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4092446A (en) * 1974-07-31 1978-05-30 Texas Instruments Incorporated Process of refining impure silicon to produce purified electronic grade silicon
GB2028289B (en) * 1978-08-18 1982-09-02 Schumacher Co J C Producing silicon
US4676967A (en) 1978-08-23 1987-06-30 Union Carbide Corporation High purity silane and silicon production
DE3024319C2 (de) * 1980-06-27 1983-07-21 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Kontinuierliches Verfahren zur Herstellung von Trichlorsilan
US4526769A (en) 1983-07-18 1985-07-02 Motorola, Inc. Trichlorosilane production process
US5871705A (en) 1996-09-19 1999-02-16 Tokuyama Corporation Process for producing trichlorosilane
JPH1149508A (ja) * 1997-06-03 1999-02-23 Tokuyama Corp 多結晶シリコンの廃棄物の少ない製造方法
US6277194B1 (en) * 1999-10-21 2001-08-21 Applied Materials, Inc. Method for in-situ cleaning of surfaces in a substrate processing chamber
NO20033207D0 (no) * 2002-07-31 2003-07-15 Per Kristian Egeberg Fremgangsmåte og reaktor for fremstilling av höyrent silisium, samt anvendelse av fremgangsmåten og reaktoren ved fremstilling av höyrentsilisium fra uraffinert silisium
CN101460398B (zh) * 2006-04-13 2012-08-29 卡伯特公司 通过闭合环路方法生产硅
US7935327B2 (en) * 2006-08-30 2011-05-03 Hemlock Semiconductor Corporation Silicon production with a fluidized bed reactor integrated into a siemens-type process
JP5435188B2 (ja) * 2006-11-14 2014-03-05 三菱マテリアル株式会社 多結晶シリコンの製造方法および多結晶シリコン製造設備
CN101497442B (zh) * 2008-01-31 2012-07-04 桑中生 一种多晶硅的制备方法
WO2010002815A2 (en) * 2008-06-30 2010-01-07 Memc Electronic Materials, Inc. Fluidized bed reactor systems and methods for reducing the deposition of silicon on reactor walls
US8187361B2 (en) * 2009-07-02 2012-05-29 America Air Liquide, Inc. Effluent gas recovery system in polysilicon and silane plants
CN102030329B (zh) * 2009-09-29 2012-10-03 重庆大全新能源有限公司 一种多晶硅生产装置及工艺
DE102010000981A1 (de) * 2010-01-18 2011-07-21 Evonik Degussa GmbH, 45128 Closed loop-Verfahren zur Herstellung von Trichlorsilan aus metallurgischem Silicium
CN102180467B (zh) * 2010-12-24 2012-12-26 江苏中能硅业科技发展有限公司 Gcl法多晶硅生产方法

Also Published As

Publication number Publication date
TWI403610B (zh) 2013-08-01
EP2630081B1 (en) 2016-04-20
JP5946835B2 (ja) 2016-07-06
WO2012054170A1 (en) 2012-04-26
KR101948332B1 (ko) 2019-02-14
TW201221685A (en) 2012-06-01
CN107555438A (zh) 2018-01-09
KR20130138357A (ko) 2013-12-18
EP2630081A1 (en) 2013-08-28
TW201329280A (zh) 2013-07-16
JP2013540095A (ja) 2013-10-31
CN103153855A (zh) 2013-06-12

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Legal Events

Date Code Title Description
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]
B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2480 DE 17-07-2018 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.

B350 Update of information on the portal [chapter 15.35 patent gazette]