KR101932996B1 - 플립 칩 led를 위한 p-n 분리 금속 충진 - Google Patents
플립 칩 led를 위한 p-n 분리 금속 충진 Download PDFInfo
- Publication number
- KR101932996B1 KR101932996B1 KR1020137033889A KR20137033889A KR101932996B1 KR 101932996 B1 KR101932996 B1 KR 101932996B1 KR 1020137033889 A KR1020137033889 A KR 1020137033889A KR 20137033889 A KR20137033889 A KR 20137033889A KR 101932996 B1 KR101932996 B1 KR 101932996B1
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- Prior art keywords
- electrode
- layer
- metal layer
- led
- flip chip
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- H—ELECTRICITY
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161489280P | 2011-05-24 | 2011-05-24 | |
| US61/489,280 | 2011-05-24 | ||
| PCT/IB2012/052062 WO2012160455A1 (en) | 2011-05-24 | 2012-04-25 | P-n separation metal fill for flip chip leds |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20140030264A KR20140030264A (ko) | 2014-03-11 |
| KR101932996B1 true KR101932996B1 (ko) | 2018-12-27 |
Family
ID=46148910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020137033889A Active KR101932996B1 (ko) | 2011-05-24 | 2012-04-25 | 플립 칩 led를 위한 p-n 분리 금속 충진 |
Country Status (9)
| Country | Link |
|---|---|
| US (3) | US9219209B2 (enExample) |
| EP (1) | EP2715813B1 (enExample) |
| JP (1) | JP5990574B2 (enExample) |
| KR (1) | KR101932996B1 (enExample) |
| CN (1) | CN103548162B (enExample) |
| BR (1) | BR112013029686A2 (enExample) |
| RU (1) | RU2597071C2 (enExample) |
| TW (1) | TWI569469B (enExample) |
| WO (1) | WO2012160455A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8816383B2 (en) * | 2012-07-06 | 2014-08-26 | Invensas Corporation | High performance light emitting diode with vias |
| DE102014102292A1 (de) * | 2014-02-21 | 2015-08-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements |
| CN105591006A (zh) * | 2014-10-20 | 2016-05-18 | 展晶科技(深圳)有限公司 | 覆晶式led封装体 |
| US10158164B2 (en) | 2015-10-30 | 2018-12-18 | Essential Products, Inc. | Handheld mobile device with hidden antenna formed of metal injection molded substrate |
| US9896777B2 (en) | 2015-10-30 | 2018-02-20 | Essential Products, Inc. | Methods of manufacturing structures having concealed components |
| US10741486B2 (en) | 2016-03-06 | 2020-08-11 | Intel Corporation | Electronic components having three-dimensional capacitors in a metallization stack |
| WO2018223391A1 (en) * | 2017-06-09 | 2018-12-13 | Goertek. Inc | Micro-led array transfer method, manufacturing method and display device |
| US11183616B2 (en) * | 2018-09-26 | 2021-11-23 | Lumileds Llc | Phosphor converter structures for thin film packages and method of manufacture |
| CN112968094B (zh) * | 2020-07-13 | 2022-03-01 | 重庆康佳光电技术研究院有限公司 | 一种倒装led芯片及其制备方法、显示面板 |
| CN114284413B (zh) * | 2021-12-30 | 2023-04-11 | 江苏第三代半导体研究院有限公司 | 半导体器件的电极制作方法及半导体器件 |
| KR20240079696A (ko) * | 2022-11-29 | 2024-06-05 | 엘지디스플레이 주식회사 | 표시 장치 |
| TWI847685B (zh) * | 2023-05-10 | 2024-07-01 | 隆達電子股份有限公司 | 半導體結構及其形成方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011503898A (ja) * | 2007-11-14 | 2011-01-27 | クリー・インコーポレーテッド | ワイヤボンディングのないウェーハ段階のled |
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| JP2720635B2 (ja) * | 1991-06-27 | 1998-03-04 | 日本電気株式会社 | 半導体発光素子の製造方法 |
| JP4457427B2 (ja) * | 1999-03-18 | 2010-04-28 | ソニー株式会社 | 半導体発光装置とその製造方法 |
| US6486499B1 (en) * | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
| US6885035B2 (en) * | 1999-12-22 | 2005-04-26 | Lumileds Lighting U.S., Llc | Multi-chip semiconductor LED assembly |
| US6957899B2 (en) * | 2002-10-24 | 2005-10-25 | Hongxing Jiang | Light emitting diodes for high AC voltage operation and general lighting |
| US20040211972A1 (en) | 2003-04-22 | 2004-10-28 | Gelcore, Llc | Flip-chip light emitting diode |
| RU2231171C1 (ru) * | 2003-04-30 | 2004-06-20 | Закрытое акционерное общество "Инновационная фирма "ТЕТИС" | Светоизлучающий диод |
| US7179670B2 (en) * | 2004-03-05 | 2007-02-20 | Gelcore, Llc | Flip-chip light emitting diode device without sub-mount |
| US7285801B2 (en) * | 2004-04-02 | 2007-10-23 | Lumination, Llc | LED with series-connected monolithically integrated mesas |
| CN100487931C (zh) * | 2004-09-27 | 2009-05-13 | 松下电器产业株式会社 | 半导体发光元件及其制造方法和安装方法、发光器件 |
| US7736945B2 (en) | 2005-06-09 | 2010-06-15 | Philips Lumileds Lighting Company, Llc | LED assembly having maximum metal support for laser lift-off of growth substrate |
| TWI294694B (en) | 2005-06-14 | 2008-03-11 | Ind Tech Res Inst | Led wafer-level chip scale packaging |
| JP5162909B2 (ja) * | 2006-04-03 | 2013-03-13 | 豊田合成株式会社 | 半導体発光素子 |
| KR100752719B1 (ko) * | 2006-08-16 | 2007-08-29 | 삼성전기주식회사 | 플립칩용 질화물계 발광다이오드 |
| US7714348B2 (en) * | 2006-10-06 | 2010-05-11 | Ac-Led Lighting, L.L.C. | AC/DC light emitting diodes with integrated protection mechanism |
| EP2434554B1 (en) * | 2007-08-03 | 2018-05-30 | Panasonic Intellectual Property Management Co., Ltd. | Wavelength-converted light-emitting device with uniform emission |
| US20090173956A1 (en) * | 2007-12-14 | 2009-07-09 | Philips Lumileds Lighting Company, Llc | Contact for a semiconductor light emitting device |
| TW201010122A (en) * | 2008-08-21 | 2010-03-01 | Univ Nat Central | Flip-chip light-emitting diode having the epitaxy strengthening layer, and fabrication method thereof |
| KR101497953B1 (ko) * | 2008-10-01 | 2015-03-05 | 삼성전자 주식회사 | 광추출 효율이 향상된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법 |
| US7875984B2 (en) * | 2009-03-04 | 2011-01-25 | Koninklijke Philips Electronics N.V. | Complaint bonding structures for semiconductor devices |
| JP2011071339A (ja) * | 2009-09-25 | 2011-04-07 | Toyoda Gosei Co Ltd | 発光素子 |
| KR101007137B1 (ko) * | 2010-03-08 | 2011-01-10 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
| JP5356312B2 (ja) * | 2010-05-24 | 2013-12-04 | 株式会社東芝 | 半導体発光装置 |
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2012
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011503898A (ja) * | 2007-11-14 | 2011-01-27 | クリー・インコーポレーテッド | ワイヤボンディングのないウェーハ段階のled |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014515557A (ja) | 2014-06-30 |
| JP5990574B2 (ja) | 2016-09-14 |
| RU2013156628A (ru) | 2015-06-27 |
| EP2715813A1 (en) | 2014-04-09 |
| US20140061714A1 (en) | 2014-03-06 |
| TW201301564A (zh) | 2013-01-01 |
| BR112013029686A2 (pt) | 2017-01-17 |
| US20170373235A1 (en) | 2017-12-28 |
| US10170675B2 (en) | 2019-01-01 |
| US20160126436A1 (en) | 2016-05-05 |
| CN103548162A (zh) | 2014-01-29 |
| RU2597071C2 (ru) | 2016-09-10 |
| KR20140030264A (ko) | 2014-03-11 |
| WO2012160455A1 (en) | 2012-11-29 |
| US9722161B2 (en) | 2017-08-01 |
| EP2715813B1 (en) | 2019-07-24 |
| CN103548162B (zh) | 2016-11-09 |
| US9219209B2 (en) | 2015-12-22 |
| TWI569469B (zh) | 2017-02-01 |
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