KR101920997B1 - 신규 술포늄 화합물 및 그 제조 방법, 레지스트 조성물, 그리고 패턴 형성 방법 - Google Patents
신규 술포늄 화합물 및 그 제조 방법, 레지스트 조성물, 그리고 패턴 형성 방법 Download PDFInfo
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- KR101920997B1 KR101920997B1 KR1020170058831A KR20170058831A KR101920997B1 KR 101920997 B1 KR101920997 B1 KR 101920997B1 KR 1020170058831 A KR1020170058831 A KR 1020170058831A KR 20170058831 A KR20170058831 A KR 20170058831A KR 101920997 B1 KR101920997 B1 KR 101920997B1
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- 0 CC(C)(c1cc2ccc1[o]2)OC(C(*)(C12NC1N2)I)=O Chemical compound CC(C)(c1cc2ccc1[o]2)OC(C(*)(C12NC1N2)I)=O 0.000 description 41
- SPRAASXKNGWEIC-UHFFFAOYSA-N CC(C(F)(F)F)(C(F)(F)F)OC(C)=O Chemical compound CC(C(F)(F)F)(C(F)(F)F)OC(C)=O SPRAASXKNGWEIC-UHFFFAOYSA-N 0.000 description 1
- CWQVUCBBVXFEMM-UHFFFAOYSA-N CC(C)(C)c(cc1)ccc1S(c1ccccc1)c1ccccc1C(OC)=O Chemical compound CC(C)(C)c(cc1)ccc1S(c1ccccc1)c1ccccc1C(OC)=O CWQVUCBBVXFEMM-UHFFFAOYSA-N 0.000 description 1
- YJJDYLIFIZYGIT-UHFFFAOYSA-N CN[N](N)(N)N=O Chemical compound CN[N](N)(N)N=O YJJDYLIFIZYGIT-UHFFFAOYSA-N 0.000 description 1
- OXOWIEIMPCATII-UHFFFAOYSA-N COC(c(cccc1)c1Sc1ccccc1)=O Chemical compound COC(c(cccc1)c1Sc1ccccc1)=O OXOWIEIMPCATII-UHFFFAOYSA-N 0.000 description 1
- JZNQWCRANSQIBD-UHFFFAOYSA-N Oc(cccc1)c1N(c1ccccc1)c1ccccc1 Chemical compound Oc(cccc1)c1N(c1ccccc1)c1ccccc1 JZNQWCRANSQIBD-UHFFFAOYSA-N 0.000 description 1
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- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C323/00—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups
- C07C323/50—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and carboxyl groups bound to the same carbon skeleton
- C07C323/62—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and carboxyl groups bound to the same carbon skeleton having the sulfur atom of at least one of the thio groups bound to a carbon atom of a six-membered aromatic ring of the carbon skeleton
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
- C07C381/12—Sulfonium compounds
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C291/00—Compounds containing carbon and nitrogen and having functional groups not covered by groups C07C201/00 - C07C281/00
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
- C08K5/37—Thiols
- C08K5/375—Thiols containing six-membered aromatic rings
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
- C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
- G03F7/2055—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser for the production of printing plates; Exposure of liquid photohardening compositions
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- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- Polymers & Plastics (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Manufacturing & Machinery (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2016-095090 | 2016-05-11 | ||
JP2016095090A JP6583136B2 (ja) | 2016-05-11 | 2016-05-11 | 新規スルホニウム化合物及びその製造方法、レジスト組成物、並びにパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
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KR20170127381A KR20170127381A (ko) | 2017-11-21 |
KR101920997B1 true KR101920997B1 (ko) | 2018-11-21 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020170058831A KR101920997B1 (ko) | 2016-05-11 | 2017-05-11 | 신규 술포늄 화합물 및 그 제조 방법, 레지스트 조성물, 그리고 패턴 형성 방법 |
Country Status (5)
Country | Link |
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US (1) | US10248022B2 (zh) |
JP (1) | JP6583136B2 (zh) |
KR (1) | KR101920997B1 (zh) |
CN (1) | CN107365266B (zh) |
TW (1) | TWI637938B (zh) |
Families Citing this family (23)
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WO2016035497A1 (ja) * | 2014-09-02 | 2016-03-10 | 富士フイルム株式会社 | パターン形成方法、電子デバイスの製造方法及び電子デバイス |
US10416558B2 (en) * | 2016-08-05 | 2019-09-17 | Shin-Etsu Chemical Co., Ltd. | Positive resist composition, resist pattern forming process, and photomask blank |
JP6561937B2 (ja) * | 2016-08-05 | 2019-08-21 | 信越化学工業株式会社 | ネガ型レジスト組成物及びレジストパターン形成方法 |
US10042251B2 (en) * | 2016-09-30 | 2018-08-07 | Rohm And Haas Electronic Materials Llc | Zwitterionic photo-destroyable quenchers |
JP7009980B2 (ja) * | 2016-12-28 | 2022-01-26 | 信越化学工業株式会社 | 化学増幅ネガ型レジスト組成物及びレジストパターン形成方法 |
US10301553B2 (en) | 2017-02-28 | 2019-05-28 | Ecolab Usa Inc. | Use of sulfonium salts as hydrogen sulfide inhibitors |
JP6997803B2 (ja) * | 2017-12-22 | 2022-01-18 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法、化合物 |
KR102442808B1 (ko) * | 2018-03-01 | 2022-09-14 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법 |
US10900128B2 (en) | 2018-08-29 | 2021-01-26 | Championx Usa Inc. | Use of sulfonium salts as corrosion inhibitors |
JP7099418B2 (ja) * | 2018-09-18 | 2022-07-12 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP7389622B2 (ja) * | 2018-11-20 | 2023-11-30 | 住友化学株式会社 | 塩、クエンチャー、レジスト組成物及びレジストパターンの製造方法 |
JP7489229B2 (ja) | 2019-05-17 | 2024-05-23 | 住友化学株式会社 | 塩、クエンチャー、レジスト組成物及びレジストパターンの製造方法 |
JP7488102B2 (ja) | 2019-05-17 | 2024-05-21 | 住友化学株式会社 | 塩、クエンチャー、レジスト組成物及びレジストパターンの製造方法 |
JP2020200310A (ja) | 2019-06-04 | 2020-12-17 | 住友化学株式会社 | 塩、クエンチャー、レジスト組成物及びレジストパターンの製造方法 |
JP7499071B2 (ja) | 2019-06-04 | 2024-06-13 | 住友化学株式会社 | 塩、クエンチャー、レジスト組成物及びレジストパターンの製造方法並びに塩の製造方法 |
JP7368324B2 (ja) * | 2019-07-23 | 2023-10-24 | 信越化学工業株式会社 | ケイ素含有レジスト下層膜形成用組成物及びパターン形成方法 |
JP2021038204A (ja) | 2019-08-29 | 2021-03-11 | 住友化学株式会社 | 塩、クエンチャー、レジスト組成物及びレジストパターンの製造方法 |
JP2021038203A (ja) * | 2019-08-29 | 2021-03-11 | 住友化学株式会社 | 塩、クエンチャー、レジスト組成物及びレジストパターンの製造方法 |
JP2021181431A (ja) | 2020-05-15 | 2021-11-25 | 住友化学株式会社 | カルボン酸塩、クエンチャー、レジスト組成物及びレジストパターンの製造方法 |
JP2022068394A (ja) * | 2020-10-22 | 2022-05-10 | 信越化学工業株式会社 | オニウム塩、化学増幅レジスト組成物及びパターン形成方法 |
JP2022081416A (ja) * | 2020-11-19 | 2022-05-31 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
JP2022163697A (ja) | 2021-04-14 | 2022-10-26 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
JP2023169812A (ja) | 2022-05-17 | 2023-11-30 | 信越化学工業株式会社 | 新規スルホニウム塩、レジスト組成物及びパターン形成方法 |
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EP1179750B1 (en) | 2000-08-08 | 2012-07-25 | FUJIFILM Corporation | Positive photosensitive composition and method for producing a precision integrated circuit element using the same |
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JP3912767B2 (ja) * | 2001-06-21 | 2007-05-09 | 富士フイルム株式会社 | ポジ型感光性組成物 |
CN1732408B (zh) * | 2002-12-28 | 2010-04-21 | Jsr株式会社 | 辐射敏感性树脂组合物 |
JP4639062B2 (ja) * | 2003-11-21 | 2011-02-23 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
US7374860B2 (en) * | 2005-03-22 | 2008-05-20 | Fuji Film Corporation | Positive resist composition and pattern forming method using the same |
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