KR101918166B1 - 결정된 파장의 광속을 이용하여 기판을 처리하기 위한 프로세스 및 대응하는 기판 - Google Patents

결정된 파장의 광속을 이용하여 기판을 처리하기 위한 프로세스 및 대응하는 기판 Download PDF

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KR101918166B1
KR101918166B1 KR1020137005906A KR20137005906A KR101918166B1 KR 101918166 B1 KR101918166 B1 KR 101918166B1 KR 1020137005906 A KR1020137005906 A KR 1020137005906A KR 20137005906 A KR20137005906 A KR 20137005906A KR 101918166 B1 KR101918166 B1 KR 101918166B1
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South Korea
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layer
substrate
embedded
embedded layer
irradiation
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Expired - Fee Related
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KR1020137005906A
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English (en)
Korean (ko)
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KR20140019281A (ko
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미쉘 브뤼엘
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소이텍
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H10P54/50—Cutting or separating of wafers, substrates or parts of devices by scoring, breaking or cleaving
    • H10P54/52—Cutting or separating of wafers, substrates or parts of devices by scoring, breaking or cleaving by cleaving
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
KR1020137005906A 2010-09-10 2011-09-20 결정된 파장의 광속을 이용하여 기판을 처리하기 위한 프로세스 및 대응하는 기판 Expired - Fee Related KR101918166B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1057211A FR2964788B1 (fr) 2010-09-10 2010-09-10 Procédé de traitement d'un substrat au moyen d'un flux lumineux de longueur d'onde déterminée, et substrat correspondant
FR1057211 2010-09-10
PCT/EP2011/065259 WO2012031998A1 (en) 2010-09-10 2011-09-05 Process for treating a substrate using a luminous flux of determined wavelength, and corresponding substrate

Publications (2)

Publication Number Publication Date
KR20140019281A KR20140019281A (ko) 2014-02-14
KR101918166B1 true KR101918166B1 (ko) 2018-11-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137005906A Expired - Fee Related KR101918166B1 (ko) 2010-09-10 2011-09-20 결정된 파장의 광속을 이용하여 기판을 처리하기 위한 프로세스 및 대응하는 기판

Country Status (7)

Country Link
US (2) US9190314B2 (https=)
EP (1) EP2614519B1 (https=)
JP (1) JP5952281B2 (https=)
KR (1) KR101918166B1 (https=)
CN (1) CN103201825A (https=)
FR (1) FR2964788B1 (https=)
WO (1) WO2012031998A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2964788B1 (fr) 2010-09-10 2015-05-15 Soitec Silicon On Insulator Procédé de traitement d'un substrat au moyen d'un flux lumineux de longueur d'onde déterminée, et substrat correspondant
FR2978600B1 (fr) 2011-07-25 2014-02-07 Soitec Silicon On Insulator Procede et dispositif de fabrication de couche de materiau semi-conducteur

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234356A (en) 1979-06-01 1980-11-18 Bell Telephone Laboratories, Incorporated Dual wavelength optical annealing of materials
US4456490A (en) 1983-03-09 1984-06-26 Westinghouse Electric Corp. Laser annealing of MIS devices by back surface laser treatment
WO2010052408A1 (fr) 2008-11-04 2010-05-14 S.O.I.Tec Silicon On Insulator Technologies Procede et dispositif de chauffage d'une couche d'une plaque par amorcage et flux lumineux.

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR757986A (fr) 1932-07-04 1934-01-05 Thomson Houston Comp Francaise Perfectionnements aux tubes électroniques et à leurs circuits
JP2008135436A (ja) * 2006-11-27 2008-06-12 Seiko Epson Corp 剥離方法、半導体デバイス及び電子機器
JP5286684B2 (ja) * 2007-03-28 2013-09-11 セイコーエプソン株式会社 薄膜層の剥離方法、薄膜デバイスの転写方法
FR2921752B1 (fr) * 2007-10-01 2009-11-13 Aplinov Procede de chauffage d'une plaque par un flux lumineux.
FR2964788B1 (fr) 2010-09-10 2015-05-15 Soitec Silicon On Insulator Procédé de traitement d'un substrat au moyen d'un flux lumineux de longueur d'onde déterminée, et substrat correspondant

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4234356A (en) 1979-06-01 1980-11-18 Bell Telephone Laboratories, Incorporated Dual wavelength optical annealing of materials
US4456490A (en) 1983-03-09 1984-06-26 Westinghouse Electric Corp. Laser annealing of MIS devices by back surface laser treatment
WO2010052408A1 (fr) 2008-11-04 2010-05-14 S.O.I.Tec Silicon On Insulator Technologies Procede et dispositif de chauffage d'une couche d'une plaque par amorcage et flux lumineux.

Also Published As

Publication number Publication date
US20160056247A1 (en) 2016-02-25
US20130154065A1 (en) 2013-06-20
CN103201825A (zh) 2013-07-10
US9190314B2 (en) 2015-11-17
EP2614519B1 (en) 2015-07-01
JP2013541197A (ja) 2013-11-07
US9564496B2 (en) 2017-02-07
JP5952281B2 (ja) 2016-07-13
FR2964788B1 (fr) 2015-05-15
FR2964788A1 (fr) 2012-03-16
WO2012031998A1 (en) 2012-03-15
KR20140019281A (ko) 2014-02-14
EP2614519A1 (en) 2013-07-17

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