KR101913446B1 - 단일 위치 홀 효과 측정 - Google Patents

단일 위치 홀 효과 측정 Download PDF

Info

Publication number
KR101913446B1
KR101913446B1 KR1020137019289A KR20137019289A KR101913446B1 KR 101913446 B1 KR101913446 B1 KR 101913446B1 KR 1020137019289 A KR1020137019289 A KR 1020137019289A KR 20137019289 A KR20137019289 A KR 20137019289A KR 101913446 B1 KR101913446 B1 KR 101913446B1
Authority
KR
South Korea
Prior art keywords
additional
current
resistance
resistance value
contact element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020137019289A
Other languages
English (en)
Korean (ko)
Other versions
KR20130132558A (ko
Inventor
페이 웨이
더크 조르트 피터센
올레 한센
Original Assignee
카프레스 에이/에스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP10196137A external-priority patent/EP2469271A1/en
Priority claimed from EP11157330A external-priority patent/EP2498081A1/en
Application filed by 카프레스 에이/에스 filed Critical 카프레스 에이/에스
Publication of KR20130132558A publication Critical patent/KR20130132558A/ko
Application granted granted Critical
Publication of KR101913446B1 publication Critical patent/KR101913446B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2648—Characterising semiconductor materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/14—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Health & Medical Sciences (AREA)
  • Electrochemistry (AREA)
  • Pathology (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Hall/Mr Elements (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
KR1020137019289A 2010-12-21 2011-12-21 단일 위치 홀 효과 측정 Active KR101913446B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP10196137.3 2010-12-21
EP10196137A EP2469271A1 (en) 2010-12-21 2010-12-21 Single-position Hall effect measurements
EP11157330.9 2011-03-08
EP11157330A EP2498081A1 (en) 2011-03-08 2011-03-08 Single-position hall effect measurements
PCT/DK2011/000156 WO2012083955A1 (en) 2010-12-21 2011-12-21 Single-position hall effect measurements

Publications (2)

Publication Number Publication Date
KR20130132558A KR20130132558A (ko) 2013-12-04
KR101913446B1 true KR101913446B1 (ko) 2018-10-30

Family

ID=45445680

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137019289A Active KR101913446B1 (ko) 2010-12-21 2011-12-21 단일 위치 홀 효과 측정

Country Status (8)

Country Link
US (1) US9644939B2 (https=)
EP (1) EP2656056A1 (https=)
JP (1) JP6013361B2 (https=)
KR (1) KR101913446B1 (https=)
CN (1) CN103380368B (https=)
IL (1) IL227022A (https=)
SG (1) SG191251A1 (https=)
WO (1) WO2012083955A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2871487A1 (en) 2013-11-11 2015-05-13 Capres A/S Small scale measurements of anisotropic sheet conductances
GB2528667A (en) * 2014-07-25 2016-02-03 Sec Dep For Business Innovation & Skills Measurement technique for thin-film characterization
US9797965B2 (en) * 2016-01-15 2017-10-24 Lake Shore Cryotronics, Inc. Fast hall effect measurement system
US11131700B2 (en) 2017-01-09 2021-09-28 Capres A/S Position correction method and a system for position correction in relation to four probe resistance measurements
DE102017105317B3 (de) 2017-03-14 2018-05-09 Helmholtz-Zentrum Dresden - Rossendorf E.V. Vorrichtung zum Charakterisieren des elektrischen Widerstandes eines Messobjekts
SE543921C2 (en) * 2019-09-20 2021-09-21 Rehninvent Ab A device, a method, a system, and a kit of parts for measuring an amount of dirt
US11740279B2 (en) 2020-04-24 2023-08-29 Kla Corporation Measuring temperature-modulated properties of a test sample
CN111707182B (zh) * 2020-06-29 2022-06-03 上海中商网络股份有限公司 一种产品间距检测系统、方法和装置
JP7511240B2 (ja) 2020-12-22 2024-07-05 ユニークチップス合同会社 半導体および導電性薄膜への電気的コンタクトの形成法とそれを用いたシート抵抗測定装置、ホール効果測定装置、容量・電圧特性測定装置
CN112878309A (zh) * 2021-01-08 2021-06-01 河海大学 一种电解减饱和预制管桩复合桩基及使用方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7008274A (https=) * 1970-06-06 1971-12-08
JPS5262479A (en) * 1975-11-19 1977-05-23 Agency Of Ind Science & Technol Prove device for measurement
US4857839A (en) 1988-03-02 1989-08-15 Wright State University Method and apparatus for measuring average resistivity and hall-effect of semiconductor wafers
CH682017A5 (en) * 1990-02-01 1993-06-30 Radivoje Popovic Appts. for measuring characteristic values of semiconductor wafer - employs homogeneous magnetic field and predefined test current to establish specific resistance and Hall coefft. of sample
US5150042A (en) * 1991-09-23 1992-09-22 The United States Of America As Represented By The Secretary Of The Air Force On-wafer Hall-effect measurement system
GB2276462B (en) * 1993-03-23 1997-01-22 Univ Sheffield Method and apparatus for mapping of semiconductor materials
WO2000003252A2 (en) 1998-07-08 2000-01-20 Capres Aps Multi-point probe
WO2005022135A1 (en) * 2003-08-27 2005-03-10 Prussin Simon A In situ determination of resistivity, mobility and dopant concentration profiles
JP5192232B2 (ja) 2004-06-21 2013-05-08 カプレス・アクティーゼルスカブ プローブの位置合せを行なう方法
EP1775594A1 (en) * 2005-10-17 2007-04-18 Capres A/S Eliminating in-line positional errors for four-point resistance measurement
EP1780550A1 (en) 2005-10-31 2007-05-02 Capres A/S A probe for testing electrical properties of test samples
EP1970714A1 (en) 2007-03-12 2008-09-17 Capres Aps Device including a contact detector
US8907690B2 (en) * 2007-09-03 2014-12-09 Capres A/S Method of determining an electrical property of a test sample
USD614151S1 (en) 2008-04-04 2010-04-20 Petersen Christian L Microchip probe
EP2141503A1 (en) 2008-06-30 2010-01-06 Capres A/S A multi-point probe for testing electrical properties and a method of producing a multi-point probe
EP2237052A1 (en) 2009-03-31 2010-10-06 Capres A/S Automated multi-point probe manipulation
JP5499383B2 (ja) * 2010-03-30 2014-05-21 株式会社国際電気セミコンダクターサービス 半導体ウェーハ抵抗率測定装置

Also Published As

Publication number Publication date
US20140015552A1 (en) 2014-01-16
JP2014503114A (ja) 2014-02-06
US9644939B2 (en) 2017-05-09
WO2012083955A1 (en) 2012-06-28
IL227022A (en) 2017-06-29
CN103380368A (zh) 2013-10-30
JP6013361B2 (ja) 2016-10-25
EP2656056A1 (en) 2013-10-30
CN103380368B (zh) 2017-03-01
KR20130132558A (ko) 2013-12-04
SG191251A1 (en) 2013-07-31

Similar Documents

Publication Publication Date Title
KR101913446B1 (ko) 단일 위치 홀 효과 측정
US6943571B2 (en) Reduction of positional errors in a four point probe resistance measurement
KR102478717B1 (ko) 4개의 프로브 저항 측정에 관한 위치 보정을 위한 위치 보정 방법 및 시스템
JP5283707B2 (ja) 静電チャックの検査方法及び静電チャック装置
CN105910735B (zh) 机械应力的探测与补偿
CN106153207A (zh) 一种柔性温度传感器及其制备工艺
US20140303916A1 (en) Four-line electrical impedance probe
CN108196110B (zh) 一种金属半导体界面复合电流密度的测试方法及装置
KR20180033053A (ko) 센서 장치
JP2014503114A5 (https=)
CN102879646B (zh) 基板检查装置和基板检查方法
CN116381345B (zh) 薄膜电阻测量结构、测量方法及测量系统
WO2020085250A1 (ja) 土壌評価センサ、土壌評価システム及び土壌評価センサ用の電極及び土壌のインピーダンス特性を得る装置
JP2009522729A (ja) 電気化学デバイスの電気特性を測定する装置
CN110794290A (zh) 基板检测装置及基板检测方法
Cornils et al. Sheet resistance determination using symmetric structures with contacts of finite size
JP5628885B2 (ja) 感圧シートの押圧状態検出方法と感圧シート
EP2498081A1 (en) Single-position hall effect measurements
JP2017505425A (ja) 三次元物体の形状の少なくとも一部を確定するシステム及び対応する方法
Zarnik et al. A procedure for validating the finite element model of a piezoresistive ceramic pressure sensor
CN203707088U (zh) 用于监测集成电路套刻精度的测试结构
Gillenwater et al. Extraction of the minimum specific contact resistivity using Kelvin resistors
CN109946524B (zh) 测定装置及测定方法
EP2469271A1 (en) Single-position Hall effect measurements
CN116879774B (zh) 一种燃料电池的平面电流分布测量装置及方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 8

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000