JP6013361B2 - 単一位置ホール効果測定 - Google Patents

単一位置ホール効果測定 Download PDF

Info

Publication number
JP6013361B2
JP6013361B2 JP2013545052A JP2013545052A JP6013361B2 JP 6013361 B2 JP6013361 B2 JP 6013361B2 JP 2013545052 A JP2013545052 A JP 2013545052A JP 2013545052 A JP2013545052 A JP 2013545052A JP 6013361 B2 JP6013361 B2 JP 6013361B2
Authority
JP
Japan
Prior art keywords
contact element
additional
resistance
contact
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013545052A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014503114A (ja
JP2014503114A5 (https=
Inventor
フェイ・ウェイ
ディアク・ヨート・ペテルセン
オレ・ハンセン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Capres AS
Original Assignee
Capres AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP10196137A external-priority patent/EP2469271A1/en
Priority claimed from EP11157330A external-priority patent/EP2498081A1/en
Application filed by Capres AS filed Critical Capres AS
Publication of JP2014503114A publication Critical patent/JP2014503114A/ja
Publication of JP2014503114A5 publication Critical patent/JP2014503114A5/ja
Application granted granted Critical
Publication of JP6013361B2 publication Critical patent/JP6013361B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/14—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2648—Characterising semiconductor materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Health & Medical Sciences (AREA)
  • Electrochemistry (AREA)
  • Pathology (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Hall/Mr Elements (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
JP2013545052A 2010-12-21 2011-12-21 単一位置ホール効果測定 Active JP6013361B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP10196137.3 2010-12-21
EP10196137A EP2469271A1 (en) 2010-12-21 2010-12-21 Single-position Hall effect measurements
EP11157330.9 2011-03-08
EP11157330A EP2498081A1 (en) 2011-03-08 2011-03-08 Single-position hall effect measurements
PCT/DK2011/000156 WO2012083955A1 (en) 2010-12-21 2011-12-21 Single-position hall effect measurements

Publications (3)

Publication Number Publication Date
JP2014503114A JP2014503114A (ja) 2014-02-06
JP2014503114A5 JP2014503114A5 (https=) 2015-02-05
JP6013361B2 true JP6013361B2 (ja) 2016-10-25

Family

ID=45445680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013545052A Active JP6013361B2 (ja) 2010-12-21 2011-12-21 単一位置ホール効果測定

Country Status (8)

Country Link
US (1) US9644939B2 (https=)
EP (1) EP2656056A1 (https=)
JP (1) JP6013361B2 (https=)
KR (1) KR101913446B1 (https=)
CN (1) CN103380368B (https=)
IL (1) IL227022A (https=)
SG (1) SG191251A1 (https=)
WO (1) WO2012083955A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2871487A1 (en) 2013-11-11 2015-05-13 Capres A/S Small scale measurements of anisotropic sheet conductances
GB2528667A (en) * 2014-07-25 2016-02-03 Sec Dep For Business Innovation & Skills Measurement technique for thin-film characterization
US9797965B2 (en) * 2016-01-15 2017-10-24 Lake Shore Cryotronics, Inc. Fast hall effect measurement system
US11131700B2 (en) 2017-01-09 2021-09-28 Capres A/S Position correction method and a system for position correction in relation to four probe resistance measurements
DE102017105317B3 (de) 2017-03-14 2018-05-09 Helmholtz-Zentrum Dresden - Rossendorf E.V. Vorrichtung zum Charakterisieren des elektrischen Widerstandes eines Messobjekts
SE543921C2 (en) * 2019-09-20 2021-09-21 Rehninvent Ab A device, a method, a system, and a kit of parts for measuring an amount of dirt
US11740279B2 (en) 2020-04-24 2023-08-29 Kla Corporation Measuring temperature-modulated properties of a test sample
CN111707182B (zh) * 2020-06-29 2022-06-03 上海中商网络股份有限公司 一种产品间距检测系统、方法和装置
JP7511240B2 (ja) 2020-12-22 2024-07-05 ユニークチップス合同会社 半導体および導電性薄膜への電気的コンタクトの形成法とそれを用いたシート抵抗測定装置、ホール効果測定装置、容量・電圧特性測定装置
CN112878309A (zh) * 2021-01-08 2021-06-01 河海大学 一种电解减饱和预制管桩复合桩基及使用方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7008274A (https=) * 1970-06-06 1971-12-08
JPS5262479A (en) * 1975-11-19 1977-05-23 Agency Of Ind Science & Technol Prove device for measurement
US4857839A (en) 1988-03-02 1989-08-15 Wright State University Method and apparatus for measuring average resistivity and hall-effect of semiconductor wafers
CH682017A5 (en) * 1990-02-01 1993-06-30 Radivoje Popovic Appts. for measuring characteristic values of semiconductor wafer - employs homogeneous magnetic field and predefined test current to establish specific resistance and Hall coefft. of sample
US5150042A (en) * 1991-09-23 1992-09-22 The United States Of America As Represented By The Secretary Of The Air Force On-wafer Hall-effect measurement system
GB2276462B (en) * 1993-03-23 1997-01-22 Univ Sheffield Method and apparatus for mapping of semiconductor materials
WO2000003252A2 (en) 1998-07-08 2000-01-20 Capres Aps Multi-point probe
WO2005022135A1 (en) * 2003-08-27 2005-03-10 Prussin Simon A In situ determination of resistivity, mobility and dopant concentration profiles
JP5192232B2 (ja) 2004-06-21 2013-05-08 カプレス・アクティーゼルスカブ プローブの位置合せを行なう方法
EP1775594A1 (en) * 2005-10-17 2007-04-18 Capres A/S Eliminating in-line positional errors for four-point resistance measurement
EP1780550A1 (en) 2005-10-31 2007-05-02 Capres A/S A probe for testing electrical properties of test samples
EP1970714A1 (en) 2007-03-12 2008-09-17 Capres Aps Device including a contact detector
US8907690B2 (en) * 2007-09-03 2014-12-09 Capres A/S Method of determining an electrical property of a test sample
USD614151S1 (en) 2008-04-04 2010-04-20 Petersen Christian L Microchip probe
EP2141503A1 (en) 2008-06-30 2010-01-06 Capres A/S A multi-point probe for testing electrical properties and a method of producing a multi-point probe
EP2237052A1 (en) 2009-03-31 2010-10-06 Capres A/S Automated multi-point probe manipulation
JP5499383B2 (ja) * 2010-03-30 2014-05-21 株式会社国際電気セミコンダクターサービス 半導体ウェーハ抵抗率測定装置

Also Published As

Publication number Publication date
US20140015552A1 (en) 2014-01-16
JP2014503114A (ja) 2014-02-06
US9644939B2 (en) 2017-05-09
WO2012083955A1 (en) 2012-06-28
IL227022A (en) 2017-06-29
CN103380368A (zh) 2013-10-30
KR101913446B1 (ko) 2018-10-30
EP2656056A1 (en) 2013-10-30
CN103380368B (zh) 2017-03-01
KR20130132558A (ko) 2013-12-04
SG191251A1 (en) 2013-07-31

Similar Documents

Publication Publication Date Title
JP6013361B2 (ja) 単一位置ホール効果測定
US6943571B2 (en) Reduction of positional errors in a four point probe resistance measurement
JP6426601B2 (ja) 等方性応力を検出してピエゾホール効果の補償を提供する方法及びデバイス
EP3566062B1 (en) A position correction method and a system for position correction in relation to four-point resistance measurements
CN107636476B (zh) 支持执行并行测量的多引脚探针
US11693028B2 (en) Probe for testing an electrical property of a test sample
JP2014503114A5 (https=)
Gieva et al. Sheet resistance measurement of inkjet printed layers
CN106370932B (zh) 基于伪测量值法的薄层硅片电阻率检测方法及系统
CN102243274B (zh) 一种测算Pb-Sn-Al层状复合材料界面电阻率的方法
US7034519B2 (en) High frequency measurement for current-in-plane-tunneling
Cornils et al. Sheet resistance determination using symmetric structures with contacts of finite size
KR102101340B1 (ko) 층상 구조를 가지는 2차원 물질의 저항 측정 방법 및 장치
TWI871461B (zh) 回應於一測試樣品之一溫度調變而量測一特性的方法，篩選一測試樣品之方法，以及判定電阻溫度係數之方法
EP2498081A1 (en) Single-position hall effect measurements
US6894513B2 (en) Multipoint plane measurement probe and methods of characterization and manufacturing using same
Cornils et al. Beyond van der Pauw: Sheet resistance determination from arbitrarily shaped planar four-terminal devices with extended contacts
Nikolov et al. Virtual System for Sheet Resistance Measurement of Inkjet Printed Conductive Layers
EP2469271A1 (en) Single-position Hall effect measurements
CN109341514A (zh) 一种新型电阻应变片及应变测量方法
PL242398B1 (pl) Sposób określania oporności powierzchniowej
US20090058395A1 (en) Method for Determining Anisotropy of 1-D Conductor or Semiconductor Synthesis
KR20040016700A (ko) 면적저항 측정장치

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141209

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20141209

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20151203

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160202

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160830

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160921

R150 Certificate of patent or registration of utility model

Ref document number: 6013361

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250