SG191251A1 - Single-position hall effect measurements - Google Patents

Single-position hall effect measurements Download PDF

Info

Publication number
SG191251A1
SG191251A1 SG2013047386A SG2013047386A SG191251A1 SG 191251 A1 SG191251 A1 SG 191251A1 SG 2013047386 A SG2013047386 A SG 2013047386A SG 2013047386 A SG2013047386 A SG 2013047386A SG 191251 A1 SG191251 A1 SG 191251A1
Authority
SG
Singapore
Prior art keywords
additional
contact
resistance
contact elements
current
Prior art date
Application number
SG2013047386A
Other languages
English (en)
Inventor
Fei Wei
Dirch Hjorth Petersen
Ole Hansen
Original Assignee
Capres As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP10196137A external-priority patent/EP2469271A1/en
Priority claimed from EP11157330A external-priority patent/EP2498081A1/en
Application filed by Capres As filed Critical Capres As
Publication of SG191251A1 publication Critical patent/SG191251A1/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2648—Characterising semiconductor materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/14—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/277—Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Health & Medical Sciences (AREA)
  • Electrochemistry (AREA)
  • Pathology (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Hall/Mr Elements (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
SG2013047386A 2010-12-21 2011-12-21 Single-position hall effect measurements SG191251A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10196137A EP2469271A1 (en) 2010-12-21 2010-12-21 Single-position Hall effect measurements
EP11157330A EP2498081A1 (en) 2011-03-08 2011-03-08 Single-position hall effect measurements
PCT/DK2011/000156 WO2012083955A1 (en) 2010-12-21 2011-12-21 Single-position hall effect measurements

Publications (1)

Publication Number Publication Date
SG191251A1 true SG191251A1 (en) 2013-07-31

Family

ID=45445680

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2013047386A SG191251A1 (en) 2010-12-21 2011-12-21 Single-position hall effect measurements

Country Status (8)

Country Link
US (1) US9644939B2 (https=)
EP (1) EP2656056A1 (https=)
JP (1) JP6013361B2 (https=)
KR (1) KR101913446B1 (https=)
CN (1) CN103380368B (https=)
IL (1) IL227022A (https=)
SG (1) SG191251A1 (https=)
WO (1) WO2012083955A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2871487A1 (en) 2013-11-11 2015-05-13 Capres A/S Small scale measurements of anisotropic sheet conductances
GB2528667A (en) * 2014-07-25 2016-02-03 Sec Dep For Business Innovation & Skills Measurement technique for thin-film characterization
US9797965B2 (en) * 2016-01-15 2017-10-24 Lake Shore Cryotronics, Inc. Fast hall effect measurement system
US11131700B2 (en) 2017-01-09 2021-09-28 Capres A/S Position correction method and a system for position correction in relation to four probe resistance measurements
DE102017105317B3 (de) 2017-03-14 2018-05-09 Helmholtz-Zentrum Dresden - Rossendorf E.V. Vorrichtung zum Charakterisieren des elektrischen Widerstandes eines Messobjekts
SE543921C2 (en) * 2019-09-20 2021-09-21 Rehninvent Ab A device, a method, a system, and a kit of parts for measuring an amount of dirt
US11740279B2 (en) 2020-04-24 2023-08-29 Kla Corporation Measuring temperature-modulated properties of a test sample
CN111707182B (zh) * 2020-06-29 2022-06-03 上海中商网络股份有限公司 一种产品间距检测系统、方法和装置
JP7511240B2 (ja) 2020-12-22 2024-07-05 ユニークチップス合同会社 半導体および導電性薄膜への電気的コンタクトの形成法とそれを用いたシート抵抗測定装置、ホール効果測定装置、容量・電圧特性測定装置
CN112878309A (zh) * 2021-01-08 2021-06-01 河海大学 一种电解减饱和预制管桩复合桩基及使用方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7008274A (https=) * 1970-06-06 1971-12-08
JPS5262479A (en) * 1975-11-19 1977-05-23 Agency Of Ind Science & Technol Prove device for measurement
US4857839A (en) 1988-03-02 1989-08-15 Wright State University Method and apparatus for measuring average resistivity and hall-effect of semiconductor wafers
CH682017A5 (en) * 1990-02-01 1993-06-30 Radivoje Popovic Appts. for measuring characteristic values of semiconductor wafer - employs homogeneous magnetic field and predefined test current to establish specific resistance and Hall coefft. of sample
US5150042A (en) * 1991-09-23 1992-09-22 The United States Of America As Represented By The Secretary Of The Air Force On-wafer Hall-effect measurement system
GB2276462B (en) * 1993-03-23 1997-01-22 Univ Sheffield Method and apparatus for mapping of semiconductor materials
WO2000003252A2 (en) 1998-07-08 2000-01-20 Capres Aps Multi-point probe
WO2005022135A1 (en) * 2003-08-27 2005-03-10 Prussin Simon A In situ determination of resistivity, mobility and dopant concentration profiles
JP5192232B2 (ja) 2004-06-21 2013-05-08 カプレス・アクティーゼルスカブ プローブの位置合せを行なう方法
EP1775594A1 (en) * 2005-10-17 2007-04-18 Capres A/S Eliminating in-line positional errors for four-point resistance measurement
EP1780550A1 (en) 2005-10-31 2007-05-02 Capres A/S A probe for testing electrical properties of test samples
EP1970714A1 (en) 2007-03-12 2008-09-17 Capres Aps Device including a contact detector
US8907690B2 (en) * 2007-09-03 2014-12-09 Capres A/S Method of determining an electrical property of a test sample
USD614151S1 (en) 2008-04-04 2010-04-20 Petersen Christian L Microchip probe
EP2141503A1 (en) 2008-06-30 2010-01-06 Capres A/S A multi-point probe for testing electrical properties and a method of producing a multi-point probe
EP2237052A1 (en) 2009-03-31 2010-10-06 Capres A/S Automated multi-point probe manipulation
JP5499383B2 (ja) * 2010-03-30 2014-05-21 株式会社国際電気セミコンダクターサービス 半導体ウェーハ抵抗率測定装置

Also Published As

Publication number Publication date
US20140015552A1 (en) 2014-01-16
JP2014503114A (ja) 2014-02-06
US9644939B2 (en) 2017-05-09
WO2012083955A1 (en) 2012-06-28
IL227022A (en) 2017-06-29
CN103380368A (zh) 2013-10-30
KR101913446B1 (ko) 2018-10-30
JP6013361B2 (ja) 2016-10-25
EP2656056A1 (en) 2013-10-30
CN103380368B (zh) 2017-03-01
KR20130132558A (ko) 2013-12-04

Similar Documents

Publication Publication Date Title
SG191251A1 (en) Single-position hall effect measurements
US5857258A (en) Electrical test structure and method for measuring the relative locations of conductive features on an insulating substrate
US5602492A (en) Electrical test structure and method for measuring the relative locations of conducting features on an insulating substrate
US4516071A (en) Split-cross-bridge resistor for testing for proper fabrication of integrated circuits
US5898478A (en) Method of using a test reticle to optimize alignment of integrated circuit process layers
US5383136A (en) Electrical test structure and method for measuring the relative locations of conducting features on an insulating substrate
EP3531151B1 (en) Redundant sensor error reduction
US11085976B2 (en) Redundant sensor fault detection
US20130038340A1 (en) Measuring apparatus and measuring method
US10700013B2 (en) IC wafer for identification of circuit dies after dicing
Schreyer et al. A two-dimensional analytical model of the cross-bridge Kelvin resistor
CN110662978A (zh) 倾斜分段式的各向异性磁阻角度传感器
WO2019096695A2 (en) A probe for testing an electrical property of a test sample
US20220319744A1 (en) Resistor device
JP3700910B2 (ja) 半導体歪センサ及びその製造方法ならびに走査プローブ顕微鏡
CN218546797U (zh) 一种通过开关矩阵内部电路实现开尔文四线测试系统
KR101852466B1 (ko) 인공 위성 통합 신호 검증 장치 및 이를 이용한 위성 통합 신호 검증 방법
EP2498081A1 (en) Single-position hall effect measurements
EP2469271A1 (en) Single-position Hall effect measurements
EP4546649A2 (en) Current sense circuit with electrostatic discharge protection
CN219831253U (zh) 一种阻值测量结构
Scaletta et al. Influences of the Minkowski-Bouligand dimension on graphene-based quantum hall array designs
Cresswell et al. Electrical CD metrology and related reference materials
Reeves et al. Electrical modelling of Kelvin structures for the derivation of low specific contact resistivity
EP2871487A1 (en) Small scale measurements of anisotropic sheet conductances