JP2014503114A5 - - Google Patents

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Publication number
JP2014503114A5
JP2014503114A5 JP2013545052A JP2013545052A JP2014503114A5 JP 2014503114 A5 JP2014503114 A5 JP 2014503114A5 JP 2013545052 A JP2013545052 A JP 2013545052A JP 2013545052 A JP2013545052 A JP 2013545052A JP 2014503114 A5 JP2014503114 A5 JP 2014503114A5
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JP
Japan
Prior art keywords
contact element
additional
resistance
current
parameter
Prior art date
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Application number
JP2013545052A
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English (en)
Japanese (ja)
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JP2014503114A (ja
JP6013361B2 (ja
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Publication date
Priority claimed from EP10196137A external-priority patent/EP2469271A1/en
Priority claimed from EP11157330A external-priority patent/EP2498081A1/en
Application filed filed Critical
Priority claimed from PCT/DK2011/000156 external-priority patent/WO2012083955A1/en
Publication of JP2014503114A publication Critical patent/JP2014503114A/ja
Publication of JP2014503114A5 publication Critical patent/JP2014503114A5/ja
Application granted granted Critical
Publication of JP6013361B2 publication Critical patent/JP6013361B2/ja
Active legal-status Critical Current
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JP2013545052A 2010-12-21 2011-12-21 単一位置ホール効果測定 Active JP6013361B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP10196137.3 2010-12-21
EP10196137A EP2469271A1 (en) 2010-12-21 2010-12-21 Single-position Hall effect measurements
EP11157330.9 2011-03-08
EP11157330A EP2498081A1 (en) 2011-03-08 2011-03-08 Single-position hall effect measurements
PCT/DK2011/000156 WO2012083955A1 (en) 2010-12-21 2011-12-21 Single-position hall effect measurements

Publications (3)

Publication Number Publication Date
JP2014503114A JP2014503114A (ja) 2014-02-06
JP2014503114A5 true JP2014503114A5 (https=) 2015-02-05
JP6013361B2 JP6013361B2 (ja) 2016-10-25

Family

ID=45445680

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013545052A Active JP6013361B2 (ja) 2010-12-21 2011-12-21 単一位置ホール効果測定

Country Status (8)

Country Link
US (1) US9644939B2 (https=)
EP (1) EP2656056A1 (https=)
JP (1) JP6013361B2 (https=)
KR (1) KR101913446B1 (https=)
CN (1) CN103380368B (https=)
IL (1) IL227022A (https=)
SG (1) SG191251A1 (https=)
WO (1) WO2012083955A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2871487A1 (en) 2013-11-11 2015-05-13 Capres A/S Small scale measurements of anisotropic sheet conductances
GB2528667A (en) * 2014-07-25 2016-02-03 Sec Dep For Business Innovation & Skills Measurement technique for thin-film characterization
US9797965B2 (en) * 2016-01-15 2017-10-24 Lake Shore Cryotronics, Inc. Fast hall effect measurement system
US11131700B2 (en) 2017-01-09 2021-09-28 Capres A/S Position correction method and a system for position correction in relation to four probe resistance measurements
DE102017105317B3 (de) 2017-03-14 2018-05-09 Helmholtz-Zentrum Dresden - Rossendorf E.V. Vorrichtung zum Charakterisieren des elektrischen Widerstandes eines Messobjekts
SE543921C2 (en) * 2019-09-20 2021-09-21 Rehninvent Ab A device, a method, a system, and a kit of parts for measuring an amount of dirt
US11740279B2 (en) 2020-04-24 2023-08-29 Kla Corporation Measuring temperature-modulated properties of a test sample
CN111707182B (zh) * 2020-06-29 2022-06-03 上海中商网络股份有限公司 一种产品间距检测系统、方法和装置
JP7511240B2 (ja) 2020-12-22 2024-07-05 ユニークチップス合同会社 半導体および導電性薄膜への電気的コンタクトの形成法とそれを用いたシート抵抗測定装置、ホール効果測定装置、容量・電圧特性測定装置
CN112878309A (zh) * 2021-01-08 2021-06-01 河海大学 一种电解减饱和预制管桩复合桩基及使用方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7008274A (https=) * 1970-06-06 1971-12-08
JPS5262479A (en) * 1975-11-19 1977-05-23 Agency Of Ind Science & Technol Prove device for measurement
US4857839A (en) 1988-03-02 1989-08-15 Wright State University Method and apparatus for measuring average resistivity and hall-effect of semiconductor wafers
CH682017A5 (en) * 1990-02-01 1993-06-30 Radivoje Popovic Appts. for measuring characteristic values of semiconductor wafer - employs homogeneous magnetic field and predefined test current to establish specific resistance and Hall coefft. of sample
US5150042A (en) * 1991-09-23 1992-09-22 The United States Of America As Represented By The Secretary Of The Air Force On-wafer Hall-effect measurement system
GB2276462B (en) * 1993-03-23 1997-01-22 Univ Sheffield Method and apparatus for mapping of semiconductor materials
WO2000003252A2 (en) 1998-07-08 2000-01-20 Capres Aps Multi-point probe
WO2005022135A1 (en) * 2003-08-27 2005-03-10 Prussin Simon A In situ determination of resistivity, mobility and dopant concentration profiles
JP5192232B2 (ja) 2004-06-21 2013-05-08 カプレス・アクティーゼルスカブ プローブの位置合せを行なう方法
EP1775594A1 (en) * 2005-10-17 2007-04-18 Capres A/S Eliminating in-line positional errors for four-point resistance measurement
EP1780550A1 (en) 2005-10-31 2007-05-02 Capres A/S A probe for testing electrical properties of test samples
EP1970714A1 (en) 2007-03-12 2008-09-17 Capres Aps Device including a contact detector
US8907690B2 (en) * 2007-09-03 2014-12-09 Capres A/S Method of determining an electrical property of a test sample
USD614151S1 (en) 2008-04-04 2010-04-20 Petersen Christian L Microchip probe
EP2141503A1 (en) 2008-06-30 2010-01-06 Capres A/S A multi-point probe for testing electrical properties and a method of producing a multi-point probe
EP2237052A1 (en) 2009-03-31 2010-10-06 Capres A/S Automated multi-point probe manipulation
JP5499383B2 (ja) * 2010-03-30 2014-05-21 株式会社国際電気セミコンダクターサービス 半導体ウェーハ抵抗率測定装置

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