KR101905811B1 - 박리웨이퍼의 재생가공방법 - Google Patents

박리웨이퍼의 재생가공방법 Download PDF

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Publication number
KR101905811B1
KR101905811B1 KR1020147009921A KR20147009921A KR101905811B1 KR 101905811 B1 KR101905811 B1 KR 101905811B1 KR 1020147009921 A KR1020147009921 A KR 1020147009921A KR 20147009921 A KR20147009921 A KR 20147009921A KR 101905811 B1 KR101905811 B1 KR 101905811B1
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wafer
oxide film
polishing
peeling
bonded
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KR20140082701A (ko
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토루 이시즈카
유지 오쿠보
타쿠야 사사키
아키라 아라키
노부히코 노토
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신에쯔 한도타이 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/16—Preparing bulk and homogeneous wafers by reclaiming or re-processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Mechanical Treatment Of Semiconductor (AREA)
  • Element Separation (AREA)
KR1020147009921A 2011-10-17 2012-08-29 박리웨이퍼의 재생가공방법 Active KR101905811B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011227893A JP5799740B2 (ja) 2011-10-17 2011-10-17 剥離ウェーハの再生加工方法
JPJP-P-2011-227893 2011-10-17
PCT/JP2012/005418 WO2013057865A1 (ja) 2011-10-17 2012-08-29 剥離ウェーハの再生加工方法

Publications (2)

Publication Number Publication Date
KR20140082701A KR20140082701A (ko) 2014-07-02
KR101905811B1 true KR101905811B1 (ko) 2018-10-08

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KR1020147009921A Active KR101905811B1 (ko) 2011-10-17 2012-08-29 박리웨이퍼의 재생가공방법

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Country Link
US (1) US9496130B2 (https=)
EP (1) EP2770524B1 (https=)
JP (1) JP5799740B2 (https=)
KR (1) KR101905811B1 (https=)
CN (1) CN103875061B (https=)
TW (1) TWI550702B (https=)
WO (1) WO2013057865A1 (https=)

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JP5888286B2 (ja) * 2013-06-26 2016-03-16 信越半導体株式会社 貼り合わせウェーハの製造方法
JP6136786B2 (ja) * 2013-09-05 2017-05-31 信越半導体株式会社 貼り合わせウェーハの製造方法
JP6090184B2 (ja) * 2014-01-27 2017-03-08 信越半導体株式会社 半導体ウェーハの洗浄槽及び貼り合わせウェーハの製造方法
CN103794467A (zh) * 2014-02-21 2014-05-14 上海超硅半导体有限公司 一种薄硅片的重新利用方法
US20180033609A1 (en) * 2016-07-28 2018-02-01 QMAT, Inc. Removal of non-cleaved/non-transferred material from donor substrate
JP6772820B2 (ja) * 2016-12-22 2020-10-21 日亜化学工業株式会社 再生基板の製造方法及び発光素子の製造方法
JP6607207B2 (ja) * 2017-01-25 2019-11-20 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
CN110620126A (zh) * 2019-09-26 2019-12-27 德淮半导体有限公司 图像传感器及其制造方法
KR20230154934A (ko) * 2021-03-09 2023-11-09 도쿄엘렉트론가부시키가이샤 적층 기판의 제조 방법 및 기판 처리 장치
CN113192823B (zh) * 2021-04-27 2022-06-21 麦斯克电子材料股份有限公司 一种soi键合工艺后衬底片的再生加工方法

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JP2005072071A (ja) 2003-08-28 2005-03-17 Sumitomo Mitsubishi Silicon Corp 剥離ウェーハの再生処理方法及び再生されたウェーハ
JP2005072073A (ja) 2003-08-28 2005-03-17 Sumitomo Mitsubishi Silicon Corp 剥離ウェーハの再生処理方法及び再生されたウェーハ
US20060115986A1 (en) 2004-11-26 2006-06-01 Applied Materials, Inc. Edge removal of silicon-on-insulator transfer wafer
KR100733113B1 (ko) * 1999-11-29 2007-06-27 신에쯔 한도타이 가부시키가이샤 박리 웨이퍼의 재생처리방법
JP2008021892A (ja) 2006-07-14 2008-01-31 Shin Etsu Handotai Co Ltd 剥離ウェーハを再利用する方法
US20100297828A1 (en) 2008-03-11 2010-11-25 Christophe Maleville Method for fabricating a semiconductor on insulator type substrate

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FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP3500063B2 (ja) * 1998-04-23 2004-02-23 信越半導体株式会社 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ
US6884696B2 (en) * 2001-07-17 2005-04-26 Shin-Etsu Handotai Co., Ltd. Method for producing bonding wafer
JP4474863B2 (ja) * 2003-08-28 2010-06-09 株式会社Ｓｕｍｃｏ 剥離ウェーハの再生処理方法及び再生されたウェーハ
JP2005079389A (ja) * 2003-09-01 2005-03-24 Sumitomo Mitsubishi Silicon Corp 貼り合わせウェーハの分離方法及びその分離用ボート
JP2005093869A (ja) 2003-09-19 2005-04-07 Mimasu Semiconductor Industry Co Ltd シリコンウエーハの再生方法及び再生ウエーハ
JP4407384B2 (ja) 2004-05-28 2010-02-03 株式会社Ｓｕｍｃｏ Ｓｏｉ基板の製造方法
JP2006294737A (ja) * 2005-04-07 2006-10-26 Sumco Corp Ｓｏｉ基板の製造方法及びその製造における剥離ウェーハの再生処理方法。
JP4715470B2 (ja) * 2005-11-28 2011-07-06 株式会社Sumco 剥離ウェーハの再生加工方法及びこの方法により再生加工された剥離ウェーハ
EP2105957A3 (en) * 2008-03-26 2011-01-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate and method for manufacturing semiconductor device
JP5654206B2 (ja) * 2008-03-26 2015-01-14 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法及び該ｓｏｉ基板を用いた半導体装置
JP5446160B2 (ja) 2008-07-31 2014-03-19 株式会社Ｓｕｍｃｏ 再生シリコンウェーハの製造方法
EP2213415A1 (en) * 2009-01-29 2010-08-04 S.O.I. TEC Silicon Device for polishing the edge of a semiconductor substrate
EP2219208B1 (en) 2009-02-12 2012-08-29 Soitec Method for reclaiming a surface of a substrate
EP2246882B1 (en) * 2009-04-29 2015-03-04 Soitec Method for transferring a layer from a donor substrate onto a handle substrate
SG178179A1 (en) * 2009-10-09 2012-03-29 Semiconductor Energy Lab Reprocessing method of semiconductor substrate, manufacturing method of reprocessed semiconductor substrate, and manufacturing method of soi substrate
FR2953988B1 (fr) * 2009-12-11 2012-02-10 S O I Tec Silicon On Insulator Tech Procede de detourage d'un substrat chanfreine.
JP5643509B2 (ja) * 2009-12-28 2014-12-17 信越化学工業株式会社 応力を低減したｓｏｓ基板の製造方法
JP5521561B2 (ja) 2010-01-12 2014-06-18 信越半導体株式会社 貼り合わせウェーハの製造方法
SG173283A1 (en) * 2010-01-26 2011-08-29 Semiconductor Energy Lab Method for manufacturing soi substrate
US9123529B2 (en) * 2011-06-21 2015-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate

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KR100733113B1 (ko) * 1999-11-29 2007-06-27 신에쯔 한도타이 가부시키가이샤 박리 웨이퍼의 재생처리방법
JP2005072071A (ja) 2003-08-28 2005-03-17 Sumitomo Mitsubishi Silicon Corp 剥離ウェーハの再生処理方法及び再生されたウェーハ
JP2005072073A (ja) 2003-08-28 2005-03-17 Sumitomo Mitsubishi Silicon Corp 剥離ウェーハの再生処理方法及び再生されたウェーハ
US20060115986A1 (en) 2004-11-26 2006-06-01 Applied Materials, Inc. Edge removal of silicon-on-insulator transfer wafer
JP2009283964A (ja) * 2004-11-26 2009-12-03 Soitec Silicon On Insulator Technologies シリコン・オン・インシュレータ搬送ウエハのエッジ除去
JP2008021892A (ja) 2006-07-14 2008-01-31 Shin Etsu Handotai Co Ltd 剥離ウェーハを再利用する方法
US20100297828A1 (en) 2008-03-11 2010-11-25 Christophe Maleville Method for fabricating a semiconductor on insulator type substrate

Also Published As

Publication number Publication date
EP2770524A4 (en) 2015-07-22
US9496130B2 (en) 2016-11-15
JP5799740B2 (ja) 2015-10-28
CN103875061B (zh) 2016-07-06
TWI550702B (zh) 2016-09-21
EP2770524A1 (en) 2014-08-27
EP2770524B1 (en) 2017-09-27
US20140273400A1 (en) 2014-09-18
TW201324603A (zh) 2013-06-16
WO2013057865A1 (ja) 2013-04-25
CN103875061A (zh) 2014-06-18
JP2013089720A (ja) 2013-05-13
KR20140082701A (ko) 2014-07-02

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