CN103875061B - 剥离晶片的再生加工方法 - Google Patents

剥离晶片的再生加工方法 Download PDF

Info

Publication number
CN103875061B
CN103875061B CN201280050352.7A CN201280050352A CN103875061B CN 103875061 B CN103875061 B CN 103875061B CN 201280050352 A CN201280050352 A CN 201280050352A CN 103875061 B CN103875061 B CN 103875061B
Authority
CN
China
Prior art keywords
wafer
oxide film
peeled
bonded
grinding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201280050352.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN103875061A (zh
Inventor
石塚徹
大久保裕司
佐佐木拓也
荒木亮
能登宣彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of CN103875061A publication Critical patent/CN103875061A/zh
Application granted granted Critical
Publication of CN103875061B publication Critical patent/CN103875061B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/16—Preparing bulk and homogeneous wafers by reclaiming or re-processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54—Cleaning of wafer edges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Element Separation (AREA)
CN201280050352.7A 2011-10-17 2012-08-29 剥离晶片的再生加工方法 Active CN103875061B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011-227893 2011-10-17
JP2011227893A JP5799740B2 (ja) 2011-10-17 2011-10-17 剥離ウェーハの再生加工方法
PCT/JP2012/005418 WO2013057865A1 (ja) 2011-10-17 2012-08-29 剥離ウェーハの再生加工方法

Publications (2)

Publication Number Publication Date
CN103875061A CN103875061A (zh) 2014-06-18
CN103875061B true CN103875061B (zh) 2016-07-06

Family

ID=48140536

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280050352.7A Active CN103875061B (zh) 2011-10-17 2012-08-29 剥离晶片的再生加工方法

Country Status (7)

Country Link
US (1) US9496130B2 (https=)
EP (1) EP2770524B1 (https=)
JP (1) JP5799740B2 (https=)
KR (1) KR101905811B1 (https=)
CN (1) CN103875061B (https=)
TW (1) TWI550702B (https=)
WO (1) WO2013057865A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5888286B2 (ja) * 2013-06-26 2016-03-16 信越半導体株式会社 貼り合わせウェーハの製造方法
JP6136786B2 (ja) * 2013-09-05 2017-05-31 信越半導体株式会社 貼り合わせウェーハの製造方法
JP6090184B2 (ja) * 2014-01-27 2017-03-08 信越半導体株式会社 半導体ウェーハの洗浄槽及び貼り合わせウェーハの製造方法
CN103794467A (zh) * 2014-02-21 2014-05-14 上海超硅半导体有限公司 一种薄硅片的重新利用方法
US20180033609A1 (en) * 2016-07-28 2018-02-01 QMAT, Inc. Removal of non-cleaved/non-transferred material from donor substrate
JP6772820B2 (ja) * 2016-12-22 2020-10-21 日亜化学工業株式会社 再生基板の製造方法及び発光素子の製造方法
JP6607207B2 (ja) * 2017-01-25 2019-11-20 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
CN110620126A (zh) * 2019-09-26 2019-12-27 德淮半导体有限公司 图像传感器及其制造方法
KR20230154934A (ko) * 2021-03-09 2023-11-09 도쿄엘렉트론가부시키가이샤 적층 기판의 제조 방법 및 기판 처리 장치
CN113192823B (zh) * 2021-04-27 2022-06-21 麦斯克电子材料股份有限公司 一种soi键合工艺后衬底片的再生加工方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1662560A2 (en) * 2004-11-26 2006-05-31 Applied Materials, Inc. Edge removal of silicon-on-insulator transfer wafer
US20060228846A1 (en) * 2005-04-07 2006-10-12 Sumco Corporation Process for Producing SOI Substrate and Process for Regeneration of Layer Transferred Wafer in the Production
CN101866824A (zh) * 2009-02-12 2010-10-20 硅绝缘体技术有限公司 用于再生衬底的表面的方法
CN101877308A (zh) * 2009-04-29 2010-11-03 硅绝缘体技术有限公司 从施主衬底到处理衬底的层转移方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP3500063B2 (ja) * 1998-04-23 2004-02-23 信越半導体株式会社 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ
JP3943782B2 (ja) * 1999-11-29 2007-07-11 信越半導体株式会社 剥離ウエーハの再生処理方法及び再生処理された剥離ウエーハ
US6884696B2 (en) * 2001-07-17 2005-04-26 Shin-Etsu Handotai Co., Ltd. Method for producing bonding wafer
JP4415588B2 (ja) 2003-08-28 2010-02-17 株式会社Ｓｕｍｃｏ 剥離ウェーハの再生処理方法
JP4474863B2 (ja) * 2003-08-28 2010-06-09 株式会社Ｓｕｍｃｏ 剥離ウェーハの再生処理方法及び再生されたウェーハ
JP4492054B2 (ja) * 2003-08-28 2010-06-30 株式会社Sumco 剥離ウェーハの再生処理方法及び再生されたウェーハ
JP2005079389A (ja) * 2003-09-01 2005-03-24 Sumitomo Mitsubishi Silicon Corp 貼り合わせウェーハの分離方法及びその分離用ボート
JP2005093869A (ja) 2003-09-19 2005-04-07 Mimasu Semiconductor Industry Co Ltd シリコンウエーハの再生方法及び再生ウエーハ
JP4407384B2 (ja) 2004-05-28 2010-02-03 株式会社Ｓｕｍｃｏ Ｓｏｉ基板の製造方法
JP4715470B2 (ja) * 2005-11-28 2011-07-06 株式会社Sumco 剥離ウェーハの再生加工方法及びこの方法により再生加工された剥離ウェーハ
JP5314838B2 (ja) * 2006-07-14 2013-10-16 信越半導体株式会社 剥離ウェーハを再利用する方法
FR2928775B1 (fr) * 2008-03-11 2011-12-09 Soitec Silicon On Insulator Procede de fabrication d'un substrat de type semiconducteur sur isolant
EP2105957A3 (en) * 2008-03-26 2011-01-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate and method for manufacturing semiconductor device
JP5654206B2 (ja) * 2008-03-26 2015-01-14 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法及び該ｓｏｉ基板を用いた半導体装置
JP5446160B2 (ja) 2008-07-31 2014-03-19 株式会社Ｓｕｍｃｏ 再生シリコンウェーハの製造方法
EP2213415A1 (en) * 2009-01-29 2010-08-04 S.O.I. TEC Silicon Device for polishing the edge of a semiconductor substrate
SG178179A1 (en) * 2009-10-09 2012-03-29 Semiconductor Energy Lab Reprocessing method of semiconductor substrate, manufacturing method of reprocessed semiconductor substrate, and manufacturing method of soi substrate
FR2953988B1 (fr) * 2009-12-11 2012-02-10 S O I Tec Silicon On Insulator Tech Procede de detourage d'un substrat chanfreine.
JP5643509B2 (ja) * 2009-12-28 2014-12-17 信越化学工業株式会社 応力を低減したｓｏｓ基板の製造方法
JP5521561B2 (ja) 2010-01-12 2014-06-18 信越半導体株式会社 貼り合わせウェーハの製造方法
SG173283A1 (en) * 2010-01-26 2011-08-29 Semiconductor Energy Lab Method for manufacturing soi substrate
US9123529B2 (en) * 2011-06-21 2015-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1662560A2 (en) * 2004-11-26 2006-05-31 Applied Materials, Inc. Edge removal of silicon-on-insulator transfer wafer
US20060228846A1 (en) * 2005-04-07 2006-10-12 Sumco Corporation Process for Producing SOI Substrate and Process for Regeneration of Layer Transferred Wafer in the Production
CN101866824A (zh) * 2009-02-12 2010-10-20 硅绝缘体技术有限公司 用于再生衬底的表面的方法
CN101877308A (zh) * 2009-04-29 2010-11-03 硅绝缘体技术有限公司 从施主衬底到处理衬底的层转移方法

Also Published As

Publication number Publication date
EP2770524A4 (en) 2015-07-22
US9496130B2 (en) 2016-11-15
JP5799740B2 (ja) 2015-10-28
TWI550702B (zh) 2016-09-21
KR101905811B1 (ko) 2018-10-08
EP2770524A1 (en) 2014-08-27
EP2770524B1 (en) 2017-09-27
US20140273400A1 (en) 2014-09-18
TW201324603A (zh) 2013-06-16
WO2013057865A1 (ja) 2013-04-25
CN103875061A (zh) 2014-06-18
JP2013089720A (ja) 2013-05-13
KR20140082701A (ko) 2014-07-02

Similar Documents

Publication Publication Date Title
CN103875061B (zh) 剥离晶片的再生加工方法
JP6179530B2 (ja) 貼り合わせｓｏｉウェーハの製造方法
CN101490806B (zh) 剥离晶片的再利用方法
JP4817342B2 (ja) Ｓｏｉタイプのウェハの製造方法
CN103415913B (zh) 硅晶片的制造方法
TWI480939B (zh) 回獲底材表面之方法
CN107615445A (zh) 绝缘体上硅晶圆的制造方法
KR20250065338A (ko) 다결정 실리콘 카바이드 웨이퍼를 처리하는 방법
US10600677B2 (en) Method for manufacturing bonded SOI wafer
CN105283943B (zh) 贴合晶圆的制造方法
KR20210020024A (ko) 첩합soi웨이퍼의 제조방법 및 첩합soi웨이퍼
CN106653561A (zh) 一种具有背吸杂能力的300mm重掺硅片的加工方法
TW202347607A (zh) 用於製作雙重絕緣體上半導體結構之方法
JP6607207B2 (ja) 貼り合わせｓｏｉウェーハの製造方法
KR102022507B1 (ko) 접합 웨이퍼의 제조방법
CN116868308A (zh) 贴合晶圆用支撑基板的制造方法及贴合晶圆用支撑基板
JPH11288941A (ja) シリコンウエハの加工方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant