KR101902469B1 - 정렬 센서 및 빔 측정 센서를 갖는 하전 입자 리소그래피 시스템 - Google Patents

정렬 센서 및 빔 측정 센서를 갖는 하전 입자 리소그래피 시스템 Download PDF

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KR101902469B1
KR101902469B1 KR1020147028395A KR20147028395A KR101902469B1 KR 101902469 B1 KR101902469 B1 KR 101902469B1 KR 1020147028395 A KR1020147028395 A KR 1020147028395A KR 20147028395 A KR20147028395 A KR 20147028395A KR 101902469 B1 KR101902469 B1 KR 101902469B1
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South Korea
Prior art keywords
beamlet
charged particle
chuck
substrate
measurement
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Korean (ko)
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KR20140138895A (ko
Inventor
폴 이즈메르트 쉐퍼스
잔 안드리어스 마이저
에르빈 슬로트
빈센트 실베스터 쿠이퍼
니엘스 버기어
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마퍼 리쏘그라피 아이피 비.브이.
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1502—Mechanical adjustments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/3045—Deflection calibration

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020147028395A 2012-03-08 2013-03-08 정렬 센서 및 빔 측정 센서를 갖는 하전 입자 리소그래피 시스템 Active KR101902469B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261608513P 2012-03-08 2012-03-08
US61/608,513 2012-03-08
PCT/EP2013/054723 WO2013132064A2 (en) 2012-03-08 2013-03-08 Charged particle lithography system with alignment sensor and beam measurement sensor

Publications (2)

Publication Number Publication Date
KR20140138895A KR20140138895A (ko) 2014-12-04
KR101902469B1 true KR101902469B1 (ko) 2018-09-28

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Country Status (7)

Country Link
US (2) USRE49732E1 (enExample)
JP (4) JP2015509666A (enExample)
KR (1) KR101902469B1 (enExample)
CN (1) CN104272427B (enExample)
NL (1) NL2010409C2 (enExample)
TW (1) TWI584334B (enExample)
WO (1) WO2013132064A2 (enExample)

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US9255787B1 (en) 2013-01-21 2016-02-09 Kla-Tencor Corporation Measurement of critical dimension and scanner aberration utilizing metrology targets
JP2014225428A (ja) * 2013-04-24 2014-12-04 キヤノン株式会社 荷電粒子線照射装置、荷電粒子線の照射方法及び物品の製造方法
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JP2015177032A (ja) * 2014-03-14 2015-10-05 キヤノン株式会社 リソグラフィ装置及び物品の製造方法
WO2016015955A1 (en) * 2014-07-30 2016-02-04 Asml Netherlands B.V. Alignment sensor and lithographic apparatus background
US10008364B2 (en) * 2015-02-27 2018-06-26 Kla-Tencor Corporation Alignment of multi-beam patterning tool
NL2016298A (en) * 2015-03-23 2016-09-30 Asml Netherlands Bv Lithographic apparatus, and device manufacturing method
US10585360B2 (en) * 2017-08-25 2020-03-10 Applied Materials, Inc. Exposure system alignment and calibration method
TWI794530B (zh) * 2018-07-20 2023-03-01 美商應用材料股份有限公司 基板定位設備及方法
EP4165675A1 (en) * 2020-06-10 2023-04-19 ASML Netherlands B.V. Replaceable module for a charged particle apparatus
TWI812991B (zh) * 2020-09-03 2023-08-21 荷蘭商Ａｓｍｌ荷蘭公司 帶電粒子系統及操作帶電粒子系統之方法
EP4202970A1 (en) * 2021-12-24 2023-06-28 ASML Netherlands B.V. Alignment determination method and computer program
CN117280069B (zh) 2022-04-20 2024-09-03 日本制铁株式会社 热浸镀钢材
WO2025223848A1 (en) * 2024-04-23 2025-10-30 Carl Zeiss Smt Gmbh Inspection apparatus for 3D tomography with improved stand-still performance

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Also Published As

Publication number Publication date
TW201344737A (zh) 2013-11-01
US20150109601A1 (en) 2015-04-23
JP2022069530A (ja) 2022-05-11
NL2010409C2 (en) 2014-08-04
NL2010409A (en) 2013-09-10
JP2018061048A (ja) 2018-04-12
CN104272427A (zh) 2015-01-07
JP2015509666A (ja) 2015-03-30
KR20140138895A (ko) 2014-12-04
TWI584334B (zh) 2017-05-21
CN104272427B (zh) 2017-05-17
JP2020005005A (ja) 2020-01-09
US9665014B2 (en) 2017-05-30
JP6931317B2 (ja) 2021-09-01
WO2013132064A2 (en) 2013-09-12
WO2013132064A3 (en) 2013-10-31
JP7040878B2 (ja) 2022-03-23
USRE49732E1 (en) 2023-11-21

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