CN104272427B - 具有对准传感器和射束测量传感器的带电粒子光刻系统 - Google Patents

具有对准传感器和射束测量传感器的带电粒子光刻系统 Download PDF

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Publication number
CN104272427B
CN104272427B CN201380022770.XA CN201380022770A CN104272427B CN 104272427 B CN104272427 B CN 104272427B CN 201380022770 A CN201380022770 A CN 201380022770A CN 104272427 B CN104272427 B CN 104272427B
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CN
China
Prior art keywords
charged particle
chuck
narrow beam
measurement
sensor
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CN201380022770.XA
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English (en)
Chinese (zh)
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CN104272427A (zh
Inventor
P.I.谢弗斯
J.A.梅杰
E.斯洛特
V.S.凯珀
N.弗奇尔
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ASML Netherlands BV
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Mapper Lithopraphy IP BV
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Publication of CN104272427A publication Critical patent/CN104272427A/zh
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1502—Mechanical adjustments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/3045—Deflection calibration

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN201380022770.XA 2012-03-08 2013-03-08 具有对准传感器和射束测量传感器的带电粒子光刻系统 Active CN104272427B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261608513P 2012-03-08 2012-03-08
US61/608,513 2012-03-08
PCT/EP2013/054723 WO2013132064A2 (en) 2012-03-08 2013-03-08 Charged particle lithography system with alignment sensor and beam measurement sensor

Publications (2)

Publication Number Publication Date
CN104272427A CN104272427A (zh) 2015-01-07
CN104272427B true CN104272427B (zh) 2017-05-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380022770.XA Active CN104272427B (zh) 2012-03-08 2013-03-08 具有对准传感器和射束测量传感器的带电粒子光刻系统

Country Status (7)

Country Link
US (2) USRE49732E1 (enExample)
JP (4) JP2015509666A (enExample)
KR (1) KR101902469B1 (enExample)
CN (1) CN104272427B (enExample)
NL (1) NL2010409C2 (enExample)
TW (1) TWI584334B (enExample)
WO (1) WO2013132064A2 (enExample)

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US9255787B1 (en) 2013-01-21 2016-02-09 Kla-Tencor Corporation Measurement of critical dimension and scanner aberration utilizing metrology targets
JP2014225428A (ja) * 2013-04-24 2014-12-04 キヤノン株式会社 荷電粒子線照射装置、荷電粒子線の照射方法及び物品の製造方法
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JP2015177032A (ja) * 2014-03-14 2015-10-05 キヤノン株式会社 リソグラフィ装置及び物品の製造方法
US9857703B2 (en) 2014-07-30 2018-01-02 Asml Netherlands B.V. Alignment sensor and lithographic apparatus
US10008364B2 (en) * 2015-02-27 2018-06-26 Kla-Tencor Corporation Alignment of multi-beam patterning tool
WO2016150631A1 (en) * 2015-03-23 2016-09-29 Asml Netherlands B.V. Lithographic apparatus, and device manufacturing method
US10585360B2 (en) * 2017-08-25 2020-03-10 Applied Materials, Inc. Exposure system alignment and calibration method
TWI794530B (zh) * 2018-07-20 2023-03-01 美商應用材料股份有限公司 基板定位設備及方法
TWI888948B (zh) * 2020-09-03 2025-07-01 荷蘭商Ａｓｍｌ荷蘭公司 孔徑陣列、包括孔徑陣列之帶電粒子工具、及其相關非暫時性電腦可讀媒體
EP4202970A1 (en) * 2021-12-24 2023-06-28 ASML Netherlands B.V. Alignment determination method and computer program
AU2023256986A1 (en) 2022-04-20 2024-10-31 Nippon Steel Corporation Hot-dip plated steel material
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Also Published As

Publication number Publication date
CN104272427A (zh) 2015-01-07
KR101902469B1 (ko) 2018-09-28
NL2010409C2 (en) 2014-08-04
WO2013132064A3 (en) 2013-10-31
TWI584334B (zh) 2017-05-21
JP2022069530A (ja) 2022-05-11
WO2013132064A2 (en) 2013-09-12
US9665014B2 (en) 2017-05-30
JP2015509666A (ja) 2015-03-30
JP2020005005A (ja) 2020-01-09
USRE49732E1 (en) 2023-11-21
JP7040878B2 (ja) 2022-03-23
KR20140138895A (ko) 2014-12-04
NL2010409A (en) 2013-09-10
TW201344737A (zh) 2013-11-01
JP2018061048A (ja) 2018-04-12
US20150109601A1 (en) 2015-04-23
JP6931317B2 (ja) 2021-09-01

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