KR101901589B1 - Light emitting device - Google Patents

Abstract

An embodiment provides a semiconductor device comprising a first semiconductor layer divided into an electrode region including first and second regions and a cell region, a second semiconductor layer on the cell region, and an active layer between the first and second semiconductor layers, A light emitting device comprising: a light emitting structure including a plurality of light emitting cells partitioned based on a cell region; a light emitting structure electrically connected to the first semiconductor layer, including a first electrode portion on the first region and a second electrode portion on the second region A second electrode electrically connected to the second semiconductor layer of each of the plurality of light emitting cells, and an insulating layer disposed on the side of the plurality of light emitting cells and the second electrode unit, do.

Description

[0001]

An embodiment relates to a light emitting element.

BACKGROUND ART Light emitting devices such as a light emitting diode (LD) or a laser diode using semiconductor materials of Group 3-5 or 2-6 group semiconductors are widely used for various colors such as red, green, blue, and ultraviolet And it is possible to realize a white light beam having high efficiency by using a fluorescent material or combining colors.

Such a light emitting device has advantages such as low power consumption, semi-permanent lifetime, quick response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps, It is important to increase the efficiency of the light emitting device as the brightness required for a lamp used in daily life and a light for a structural signal is increased.

In recent years, research is underway to improve heat dissipation characteristics for heat generated in a light emitting device.

The embodiment provides a light emitting element that can easily dissipate heat and heat dissipation for heat generated when the light emitting element emits light.

A light emitting device according to an embodiment includes a first semiconductor layer divided into an electrode region including first and second regions and a cell region, a second semiconductor layer on the cell region, and an active layer between the first and second semiconductor layers A light emitting structure including a plurality of light emitting cells partitioned based on the cell region, a light emitting structure electrically connected to the first semiconductor layer, the first electrode portion on the first region, and the first electrode portion on the first region, A second electrode electrically connected to the second semiconductor layer of each of the plurality of light emitting cells, and an insulating layer disposed on the side of the plurality of light emitting cells and the second electrode unit, .

The light emitting device according to the embodiment has a structure in which the second semiconductor layer of the light emitting structure partitioned by the plurality of light emitting cells and the second electrode are disposed between the plurality of light emitting cells to dissipate the heat generated during the light emitting device emission into air, There is an advantage that the characteristic is improved.

When the light emitting device according to the embodiment is applied to a flip chip type, the light generated from the active layer is reflected by the second electrode, thereby improving light efficiency.

In addition, the light emitting device according to the embodiment has an advantage that the current can be easily diffused into a plurality of light emitting cells by disposing the first electrode electrically connected to the first semiconductor layer between the plurality of light emitting cells.

1 is an exploded perspective view illustrating a light emitting device according to a first embodiment.
2 is an exploded perspective view showing a light emitting device according to a second embodiment.
3 is a cross-sectional view showing a cut surface of the light emitting device shown in Fig.
4 is a perspective view illustrating a light emitting device package including the light emitting device shown in FIG.
5 is a perspective view illustrating a lighting device including a light emitting device according to an embodiment.
6 is a cross-sectional view showing a cross-section taken along line AA 'of the lighting apparatus shown in Fig.
7 is an exploded perspective view of a liquid crystal display device including the light emitting device according to the first embodiment.
8 is an exploded perspective view of a liquid crystal display device including a light emitting device according to the second embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of an example of the present invention, and a method for accomplishing the same will become apparent with reference to the embodiments described below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. To fully disclose the scope of the invention to a person skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

In describing an embodiment, when it is described as being formed "on or under" of each element, an upper or lower (on or under) Wherein both elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only the upward direction but also the downward direction based on one element.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.

Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.

Further, the angle and direction mentioned in the description of the structure of the light emitting device in the embodiment are based on those shown in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

FIG. 1 is an exploded perspective view illustrating a light emitting device according to a first embodiment, and FIG. 2 is an exploded perspective view illustrating a light emitting device according to a second embodiment.

1 and 2 are denoted by the same reference numerals for the same configurations.

1 and 2, the light emitting device 100 includes a support member 110, an electrode region s1 including first and second regions s11 and s12 on the support member 110, a second semiconductor layer 124 on the cell region s2 and an active layer 126 between the first and second semiconductor layers 122 and 124, A light emitting structure 120 including a plurality of light emitting cells bd partitioned on the basis of a region s2; a light emitting structure 120 electrically connected to the first semiconductor layer 122, A first electrode 130 including a second electrode portion 134 on the second region s12 and a second electrode portion 134 electrically connected to the second semiconductor layer 124 of each of the plurality of light emitting cells bd, And an insulating layer 140 disposed on the side surfaces of the second electrode 150 and the plurality of light emitting cells bd and on the second electrode portion 134.

At this time, the support member 110 may be made of a conductive substrate or an insulating substrate, and may be formed of at least one of sapphire (Al2O3), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Can be formed.

The support member 110 may be wet-cleaned to remove impurities on the surface, and the support member 110 may be patterned with a patterned sapphire substrate (PSS) to improve the light extraction effect , But is not limited thereto.

In addition, the support member 110 may be made of a material capable of facilitating the release of heat and improving the thermal stability.

On the other hand, an anti-reflection layer (not shown) for improving light extraction efficiency may be disposed on the support member 110. The anti-reflection layer is called an anti-reflective coating layer. The interference phenomenon between the reflected lights is used. That is, the phase of the light reflected from the other interface is shifted by 180 degrees so as to cancel each other, so that the intensity of the reflected light is weakened. However, the present invention is not limited thereto.

The buffer layer 112 may be disposed on the support member 110 to mitigate lattice mismatch between the support member 110 and the light emitting structure 120 and to easily grow a plurality of semiconductor layers.

The buffer layer 112 can be grown as a single crystal on the support member 110 and the buffer layer 112 grown from the single crystal can improve the crystallinity of the light emitting structure 120 grown on the buffer layer 112.

In addition, the buffer layer 112 may be formed of a structure including an AlInN / GaN laminated structure including AlN and GaN, an InGaN / GaN laminated structure, and a laminated structure of AlInGaN / InGaN / GaN.

Although the light emitting structure 120 is divided into a plurality of light emitting cells bd and the plurality of light emitting cells bd have the same size and structure, the size, i.e., the width and the thickness may be different, .

The first semiconductor layer 122 may be disposed on the support member 110 or the buffer layer 112 and may be formed of an InxAlyGa1-x-yN (0? X? 1, 0 GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, and the like, for example, Si, Ge, An n-type dopant such as Sn, Se, or Te can be doped.

Here, the first semiconductor layer 122 may be divided into an electrode region s1 and a cell region s2. At this time, the thickness of the first semiconductor layer 122 in the electrode region s1 and the cell region s2 may be different, but is not limited thereto.

The active layer 126 may be disposed on the cell region s2 of the first semiconductor layer 122. The active layer 126 may be formed of a single or multiple quantum well structure using a Group III- A quantum-wire structure, a double junction structure, or a quantum dot structure.

The active layer 126 may be formed of a well layer having a composition formula of InxAlyGa1-x-yN (0? X? 1, 0? Y? 1, 0? X + y? and a barrier layer having a composition formula of bN (0? a? 1, 0? b? 1, 0? a + b? 1). The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

A conductive clad layer (not shown) may be disposed on and / or below the active layer 126. The conductive clad layer may be formed of an AlGaN-based semiconductor, and may have a band gap It can have a large bandgap.

A second semiconductor layer 124 may be disposed on the active layer 126. The second semiconductor layer 124 may be formed of a p-type semiconductor layer. In the case of a p-type semiconductor layer, for example, InxAlyGa1- for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN or the like having a composition formula of yN (0 x 1, 0 y 1, 0 x + y 1) , A p-type dopant such as Mg, Zn, Ca, Sr, or Ba can be doped.

The first semiconductor layer 122, the active layer 126, and the second semiconductor layer 124 may be formed by, for example, metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD) A plasma enhanced chemical vapor deposition (PECVD), a molecular beam epitaxy (MBE), and a hydride vapor phase epitaxy (HVPE) It is not limited thereto.

In addition, the doping concentrations of the n-type and p-type dopants doped in the first semiconductor layer 122 and the second semiconductor layer 124 can be uniformly or nonuniformly formed. That is, the structure of the plurality of semiconductor layers may be variously formed, but the structure is not limited thereto.

The first semiconductor layer 122 may be a p-type semiconductor layer and the second semiconductor layer 124 may be an n-type semiconductor layer. Accordingly, the light emitting structure 120 may include an NP junction, a PN junction, And a PNP junction structure.

The first electrode 130 includes a first electrode portion 132 disposed in the first region s11 of the first semiconductor layer 122 and a second electrode portion 134 disposed in the second region s12. And the first and second electrode units 132 and 134 are illustrated as having a lattice shape, but they may be electrically connected in different shapes, but are not limited thereto.

Here, the thickness of the first and second electrode parts 132 and 134 may be the same, or the thickness of the first electrode part 132 may be thicker than the thickness of the second electrode part 134, but is not limited thereto.

Also, the first and second electrode units 132 and 134 can easily diffuse currents by supplying an incoming current to a plurality of neighboring light emitting cells bd.

The second electrode portion 134 shown in FIG. 1 surrounds each of the plurality of light emitting cells bd and is disposed in the second region s12. The second electrode portion 134 shown in FIG. May surround the periphery of at least two light emitting cells (bd) adjacent to the electrode portion (132) and may be disposed in the second region (s12).

That is, the second electrode unit 134 shown in FIG. 1 can easily diffuse the current uniformly in each of the plurality of light emitting cells bd, and the second electrode unit 134 shown in FIG. By surrounding the periphery of at least two light emitting cells bd adjacent to the one electrode portion 132 and surrounding each of at least one light emitting cell bd remote from the first electrode portion 132, The current supplied to at least two light emitting cells bd adjacent to the unit 132 and at least one light emitting cell bd far from the first electrode unit 132 may be the same. 1 and 2, the second electrode part 134 is shown to surround the light emitting cell bd, but may be disposed adjacent to at least one side of one of the light emitting cells bd, Do not limit.

The insulating layer 140 may be disposed on at least one side of the plurality of light emitting cells bd and the second electrode portion 134.

At this time, the insulating layer 140 can prevent the second electrode part 134 from being exposed to the outside, and can prevent electrical short-circuiting with the second electrode 150 described later .

The insulating layer 140 may have grooves or holes that expose the upper surfaces of the first electrode portion 132 and the plurality of light emitting cells bd, that is, the second semiconductor layer 124, I do not.

The second electrode 150 may be disposed on the insulating layer 140.

The second electrode 150 is electrically connected to the second semiconductor layer 124 of each of the plurality of light emitting cells bd and may be disposed over at least a portion of the insulating layer 140.

Here, the second electrode 150 may be disposed so as to overlap the second electrode part 134 with the insulating layer 140 therebetween.

At this time, the second electrode 150 may absorb heat generated when the active layer 126 emits light.

That is, when the light emitting device 100 according to the embodiment is used as a flip chip type, the heat absorbed by the second electrode 150 is easily dissipated into the air, and the second electrode 150 is formed of a plurality of layers And at least one of the plurality of layers may include at least one of reflective materials such as Ag and Al, and the advantage of reflecting light emitted from the active layer 126 by the reflective material is have.

The second electrode 150 may be formed of any one of indium (In), tungsten (Co), silicon (Si), germanium (Ge), gold (Au), palladium (Pd), platinum (Pt), ruthenium Re, magnesium, zinc, hafnium, tantalum, rhodium, iridium, tungsten, titanium, silver, chromium, Or an alloy containing at least one of Cr, Cr, Mo, Nb, Al, Ni, Cu, and WTi, It is not limited to this.

In this case, although the first and second electrodes 130 and 150 are shown as being integrally formed, the first and second electrodes 130 and 150 may have a structure in which at least two or more different materials are laminated to each other.

In addition, a transparent electrode (not shown) may be formed between the second electrode 150 and the second semiconductor layer 124. The transparent electrode may be formed of, for example, ITO, IZO (In-ZnO), GZO (ZnO), RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO But it is not limited thereto.

Although not shown in FIG. 1, when the light emitting device 100 is used as a flip chip type, the first electrode unit 132 and the second electrode 150 of the first electrode 130 are connected to a light emitting device package (not shown) And a metal electrode (not shown) connected to the bump BUMP in electrical contact with the first and second lead frames (not shown) may be disposed.

3 is a cross-sectional view showing a cut surface of the light emitting device shown in Fig.

FIG. 3 omits the description of the overlapping configuration in FIG. 1, or briefly explains.

3, the light emitting device 100 is divided into a supporting member 110, a buffer layer 112, and a plurality of light emitting cells bd. The first and second semiconductor layers 122 and 124 and the first and second semiconductor layers 122 and 124, The light emitting structure 120 including the active layer 126 and the first electrode 130 electrically connected to the first semiconductor layer 122 and the second semiconductor layer 124 electrically connected between the semiconductor layers 122 and 124, And an insulating layer 140 disposed on at least one side of the second electrode 150 and the plurality of light emitting cells bd.

The first electrode 130 includes a first electrode portion 132 disposed on the first region s11 and a second electrode portion 134 disposed on the second region s12 can do.

Here, although the first electrode portion 132 and the first region s11 are shown as being equal to each other with the first width d1, the width of the first electrode portion 132 is narrower than the width of the first region s11 And is not limited to this.

The first width d1 of the first electrode portion 132 may be 15 to 50 times or the second width d2 of the second electrode portion 134 or 40 to 100 탆.

The first electrode unit 132 may be formed to have a width greater than that of the second electrode unit 134 in order to supply a current supplied from the outside to the second electrode unit 134, It is possible to secure the bonding force and stability with the bump and to secure the bonding strength and stability with respect to the second width d2 by 50 times or more than the second width d2, Or less than 100 mu m, it is possible to secure the number of the plurality of light emitting cells bd and ensure the light emitting efficiency.

Here, the first electrode portion 132 may be disposed adjacent to one side of the insulating layer 140, or may be partially overlapped with the insulating layer 140, but is not limited thereto.

The second electrode unit 134 may be disposed to surround the plurality of light emitting cells bd as shown in FIG. 1, or may be disposed adjacent to one side of the plurality of light emitting cells bd. I do not.

The second electrode 150 may be disposed to cover the plurality of light emitting cells bd and may be disposed on the insulating layer 140 and overlapped with the second electrode unit 134.

At this time, at least a portion of the second electrode 150 may not be disposed to overlap with at least a portion of the second electrode portion 134, but is not limited thereto.

The third width d3 of the cell region s2 may be 8 to 30 times or 40 to 150 占 퐉 of the fourth width d4 of the second region s12.

That is, the cell region s2 is a region where a plurality of light emitting cells bd are formed. When the cell region s2 is less than 40 m, the growth efficiency of the active layer 126 and the second semiconductor layer 124 included in the light emitting cell bd is lowered The luminous efficiency may be lowered. If it is larger than 150 m, the number of the plurality of light emitting cells bd may be smaller, and the overall luminous efficiency may be lower than 150 m.

The fourth width d4 of the second region s12 may be 2 to 15 times the second width d2 of the second electrode portion 134 or may be 4 to 30 占 퐉.

That is, the second region s1 may be provided with an insulating layer 140 for preventing a short circuit between the second electrode portion 134 and the second electrode portion 134 and the adjacent light emitting cells bd.

The fourth width d4 of the second region s1 is formed to be at least two times or more than four microns of the second width d2 of the second electrode portion 134 so that the second electrode portion 134 ) And the light emitting cell bd and may facilitate the formation of the insulating layer 140. If the second width d2 of the second electrode portion 134 is greater than 15 times or 30 占 퐉 The number of the plurality of light emitting cells bd is lowered and the luminous efficiency can be lowered.

The light emitting device 100 of the embodiment is advantageous in that it is easy to emit heat to the outside through the second electrode 150 when mounted on a light emitting device package (not shown) in a flip chip type.

4 is a perspective view illustrating a light emitting device package including the light emitting device shown in FIG.

Since the light emitting device 210 shown in FIG. 4 has the same configuration as the light emitting device 100 shown in FIG. 1, it will be briefly described or omitted, and the light emitting device 100 shown in FIG. 1 will be described as being disposed in a flip type .

In addition, although the light emitting device package 200 is shown as a top view type in the embodiment, the light emitting device package 200 may be a side view type and is not limited thereto. Do not.

Referring to FIG. 4, the light emitting device package 200 may include a body 220 having a light emitting device 210 and a light emitting device 210 disposed thereon.

The body 220 may include a first partition 222 disposed in a first direction (not shown) and a second partition 224 disposed in a second direction (not shown) that intersects the first direction The first and second barrier ribs 222 and 224 may be integrally formed with each other and may be formed by an injection molding process or an etching process.

That is, the first and second barrier ribs 222 and 224 may be made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), AlOx, liquid crystal polymer at least one of photo sensitive glass, polyamide 9T (PA9T), syndiotactic polystyrene (SPS), metal material, sapphire (Al2O3), beryllium oxide (BeO), ceramics, and a printed circuit board .

The top and bottom surfaces of the first and second barrier ribs 222 and 224 may have various shapes such as a triangular shape, a rectangular shape, a polygonal shape, and a circular shape depending on the use and design of the light emitting device 210.

The first and second barrier ribs 222 and 224 form a cavity s in which the light emitting device 210 is disposed and the cavity s may have a cup shape or a concave shape. The first and second barrier ribs 222 and 224 forming the cavity s may be inclined downward.

The plane shape of the cavity s may have various shapes such as a triangular shape, a square shape, a polygonal shape, and a circular shape, but is not limited thereto.

A lead frame 215 including first and second lead frames 213 and 214 may be disposed on the lower surface of the body 220. The first and second lead frames 213 and 214 may be made of a metal material, (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin P, at least one of aluminum (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium (Ge), hafnium (Hf), ruthenium (Ru) Materials or alloys.

The first and second lead frames 213 and 214 may be formed to have a single layer or a multilayer structure, but are not limited thereto.

The inner surfaces of the first and second barrier ribs 222 and 224 are inclined at a predetermined inclination angle with respect to any one of the first and second lead frames 213 and 214, The reflection angle of the emitted light can be changed, and thus the directivity angle of the light emitted to the outside can be controlled. The concentration of light emitted to the outside from the light emitting device 210 increases as the directivity angle of light decreases, while the concentration of light emitted from the light emitting device 210 to the outside decreases as the directivity angle of the light increases.

The inner surface of the body 220 may have a plurality of inclination angles, but is not limited thereto.

The first and second lead frames 213 and 214 are electrically connected to the light emitting device 210 and are connected to positive and negative poles of an external power source ). ≪ / RTI >

The first electrode part 132 of the first electrode 130 included in the light emitting device 100 shown in FIGS. 1 and 2 is a flip type and the first lead frame 213, And the second electrode 150 and the second lead frame 214 may be connected to the second bump 226. In this case,

Although the second electrode 150 is shown as being connected to the second lead frame 214 by the second bump 226, the second electrode 150 may be connected to the second electrode 150 disposed on the plurality of light emitting cells bd. 2 bumps 226 may be disposed, but are not limited thereto.

That is, when the plurality of second bumps 226 are bonded to the second electrode 150, the light generated when the light emitting device 210 generates light is absorbed by the second electrode 150, There is an advantage that the second lead frame 214 can be dissipated through the two bumps 226.

That is, the first and second bumps 223 and 226 allow the first and second electrodes 132 and 134 to be electrically connected when the light emitting device 210 is a flip type and the light emitting device package 200 is formed And the material may be at least one of materials constituting the first and second electrodes 132 and 134 and the first and second lead frames 223 and 224, but is not limited thereto.

An insulation dam 216 may be formed between the first and second lead frames 213 and 214 to prevent electrical shorting of the first and second lead frames 213 and 214.

A cathode mark 217 may be formed on the body 220. The cathode mark 217 distinguishes the polarity of the light emitting element 210, that is, the polarity of the first and second lead frames 213 and 214 so that when the first and second lead frames 213 and 214 are electrically connected, Lt; / RTI >

The light emitting device 210 may be a light emitting diode. The light emitting diode may be, for example, a colored light emitting diode that emits light such as red, green, blue, or white, or a UV (Ultra Violet) light emitting diode that emits ultraviolet light. However, A plurality of light emitting devices 100 may be mounted on the frame 13 and at least one light emitting device 210 may be mounted on the first and second lead frames 13 and 14, 210, and the mounting position.

The body 220 may include a resin material 218 filled in the cavity s. That is, the resin material 218 may be formed in a double molding structure or a triple molding structure, but is not limited thereto.

The resin material 218 may be formed in a film-like shape, and is made of a transparent material and includes a light diffusing material.

FIG. 5 is a perspective view showing a lighting device including a light emitting device according to an embodiment, and FIG. 6 is a cross-sectional view showing a cross section taken along line A-A 'of the lighting device shown in FIG.

In order to describe the shape of the illumination device 300 according to the embodiment in detail, the longitudinal direction Z of the illumination device 300, the horizontal direction Y perpendicular to the longitudinal direction Z, The direction Z and the horizontal direction Y and the vertical direction X perpendicular to the horizontal direction Y will be described.

6 is a cross-sectional view of the illumination device 300 of FIG. 5 cut in the longitudinal direction Z and the height direction X and viewed in the horizontal direction Y. FIG.

5 and 6, the lighting device 300 may include a body 310, a cover 330 coupled to the body 310, and a finishing cap 350 positioned at opposite ends of the body 310 have.

A light emitting device array 340 is coupled to the lower surface of the body 310. The body 310 is electrically conductive so that heat generated from the light emitting device package 344 can be emitted to the outside through the upper surface of the body 310. [ And a metal material having an excellent heat dissipation effect.

The light emitting device array 340 may include a light emitting device package 344 and a substrate 342.

The light emitting device package 344 is mounted on the substrate 342 in a multi-color, multi-row manner to form an array. The light emitting device package 344 can be mounted at equal intervals or can be mounted with various distances as needed. As the substrate 342, a metal core PCB (MCPCB) or a PCB made of FR4 may be used, but the present invention is not limited thereto.

The cover 330 may be formed in a circular shape so as to surround the lower surface of the body 310, but is not limited thereto.

Here, the cover 330 can protect the internal light emitting device array 340 from foreign substances or the like.

The cover 330 prevents glare of light generated in the light emitting device package 344 and a prism pattern or the like may be formed on at least one of the inner and outer surfaces of the cover 330. Further, the phosphor may be coated on at least one of the inner surface and the outer surface of the cover 330.

Meanwhile, since the light generated in the light emitting device package 344 is emitted to the outside through the cover 330, the cover 330 should have a high light transmittance and sufficient heat resistance to withstand the heat generated in the light emitting device package 344 The cover 330 may be formed of a material including polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), or the like.

The finishing cap 350 is located at both ends of the body 310 and can be used for sealing the power supply unit (not shown). In addition, the finishing cap 350 is provided with the power pin 352, so that the lighting device 300 according to the embodiment can be used immediately without a separate device on the terminal from which the conventional fluorescent lamp is removed.

7 is an exploded perspective view of a liquid crystal display device including the light emitting device according to the first embodiment.

7, the liquid crystal display device 400 may include a liquid crystal display panel 410 and a backlight unit 470 for providing light to the liquid crystal display panel 410 in an edge-light manner.

The liquid crystal display panel 410 can display an image using the light provided from the backlight unit 470. The liquid crystal display panel 410 may include a color filter substrate 412 and a thin film transistor substrate 414 facing each other with a liquid crystal therebetween.

The color filter substrate 412 can realize the color of the image to be displayed through the liquid crystal display panel 410.

The thin film transistor substrate 414 is electrically connected to a printed circuit board 418 on which a plurality of circuit components are mounted through a driving film 417. The thin film transistor substrate 414 may apply a driving voltage provided from the printed circuit board 418 to the liquid crystal in response to a driving signal provided from the printed circuit board 418.

The thin film transistor substrate 414 may include a thin film transistor and a pixel electrode formed as a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 470 includes a light emitting device array 420 for outputting light, a light guide plate 430 for converting light provided from the light emitting device array 420 into a surface light source and providing the light to the liquid crystal display panel 410, A plurality of films 450, 466 and 464 for uniforming the luminance distribution of the light provided from the light guide plate 430 and improving the vertical incidence property and a reflective sheet 430 for reflecting the light emitted to the rear of the light guide plate 430 to the light guide plate 430 447).

The light emitting device array 420 may include a substrate 422 such that a plurality of light emitting device packages 424 and a plurality of light emitting device packages 424 are mounted to form an array.

The backlight unit 470 includes a diffusion film 466 for diffusing light incident from the light guide plate 430 toward the liquid crystal display panel 410 and a prism film 450 for enhancing vertical incidence by condensing the diffused light. And may include a protective film 464 for protecting the prism film 450.

8 is an exploded perspective view of a liquid crystal display device including a light emitting device according to the second embodiment.

However, the parts shown and described in Fig. 7 are not repeatedly described in detail.

8, the liquid crystal display device 500 may include a liquid crystal display panel 510 and a backlight unit 570 for providing light to the liquid crystal display panel 510 in a direct-down manner.

Since the liquid crystal display panel 510 is the same as that described with reference to FIG. 7, detailed description is omitted.

The backlight unit 570 includes a plurality of light emitting element arrays 523, a reflective sheet 524, a lower chassis 530 in which the light emitting element array 523 and the reflective sheet 524 are accommodated, A plurality of optical films 560, and a diffuser plate 540 disposed on the diffuser plate 540. [

The light emitting device array 523 may include a substrate 521 such that a plurality of light emitting device packages 522 and a plurality of light emitting device packages 522 are mounted to form an array.

The reflection sheet 524 reflects light generated from the light emitting device package 522 in a direction in which the liquid crystal display panel 510 is positioned, thereby improving light utilization efficiency.

The light emitted from the light emitting element array 523 is incident on the diffusion plate 540 and the optical film 560 is disposed on the diffusion plate 540. The optical film 560 may include a diffusion film 566, a prism film 550, and a protective film 564.

Here, the illumination device 300 and the liquid crystal display devices 400 and 500 may be included in the illumination system. In addition, the illumination device may include a light emitting device package and a device for illumination purposes.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It will be appreciated that various modifications and applications are possible without departing from the scope of the present invention. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims (17)

A first semiconductor layer partitioned into an electrode region including first and second regions and a cell region, a second semiconductor layer on the cell region, and an active layer between the first and second semiconductor layers, A light emitting structure including a plurality of light emitting cells partitioned into a plurality of light emitting cells;
A first electrode electrically connected to the first semiconductor layer, the first electrode including a first electrode portion on the first region and a second electrode portion on the second region;
A second electrode electrically connected to the second semiconductor layer of each of the plurality of light emitting cells; And
And an insulating layer disposed on the side surfaces of the plurality of light emitting cells and the second electrode portion,
The first and second electrode portions are electrically connected,
The width of the first electrode portion may be,
And the width of the second electrode portion is 15 to 50 times the width of the second electrode portion. delete delete 2. The plasma display panel of claim 1,
40 占 퐉 to 100 占 퐉. The plasma display panel of claim 1,
The thickness of the second electrode portion is equal to or less than the thickness of the second electrode portion,
Or the thickness of the second electrode portion. The method according to claim 1,
Wherein the first electrode unit comprises:
And a second electrode disposed adjacent one side of the insulating layer,
An insulating layer disposed inside the insulating layer,
And surrounds at least one of the plurality of light emitting cells. delete delete delete The plasma display panel of claim 1,
And a second electrode portion which is disposed on the second region and the cell region and overlaps at least part of the second electrode portion with the insulating layer interposed therebetween,
And at least one of Ni, Au, Al, and Ag. The method of claim 1, wherein the width of the second region
Wherein the width of the second electrode portion is 2 to 15 times the width of the second electrode portion. The method according to claim 1,
The width of the second region formed between the light emitting cells adjacent to each other among the plurality of light emitting cells is 4 占 퐉 to 30 占 퐉,
The width of the cell region may be,
The width of the second region being 8 to 30 times the width of the second region, and 40 to 150 mu m. delete delete delete delete An illumination system comprising the light-emitting device according to any one of claims 1, 4, 5, 6, 10, 11,

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