KR101903776B1 - Light emitting device - Google Patents

Abstract

An embodiment provides a semiconductor light emitting device including a first light emitting structure including a first semiconductor layer, a second semiconductor layer, and a first active layer between the first and second semiconductor layers, and a third semiconductor layer, and electrically to said third and fourth semiconductor layer a second plurality of light emitting cells comprises a light emitting structure, and the compartment to be separated from each other, the plurality of light emitting cells, each of the second, third semiconductor layer including a second active layer interposed between the first electrode and the second electrode of the plurality of light emitting cells each of the first, fourth and a second electrode electrically connected to the semiconductor layer, the first emission of the plurality of light emitting cells cells coupled to the said first It provides a second light-emitting light emitting device electrically connected to the first electrode of the cell adjacent to the first light emitting cell.

Description

[0001]

An embodiment relates to a light emitting element.

LED (Light Emitting Diode) is a device that converts electrical signals into infrared, visible light or light using the characteristics of compound semiconductors. It is used in household appliances, remote controls, display boards, The use area of LED is becoming wider.

In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.

On the other hand, since the LED has a rectifying characteristic of a general diode, when the LED is connected to an AC power source, the LED repeatedly turns on and off according to the direction of the current, so that light can not be generated continuously and the diode may be damaged by a reverse current.

Therefore, in recent years, various researches have been carried out for connecting the LED directly to the AC power source.

The light emitting device according to the embodiment provides an improved light emitting efficiency by using AC power through at least two light emitting cells spaced from each other.

A light emitting device according to an embodiment includes a first light emitting structure including a first semiconductor layer, a second semiconductor layer, and a first active layer between the first and second semiconductor layers, and a third semiconductor layer on the first light emitting structure, A second light emitting structure including a first active layer, a fourth semiconductor layer, and a second active layer between the third and fourth semiconductor layers, wherein the plurality of light emitting cells are spaced apart from each other, A first electrode electrically connected to the semiconductor layer, and a second electrode electrically connected to the first and fourth semiconductor layers of each of the plurality of light emitting cells, wherein the second electrode of the first light emitting cell May be electrically connected to the first electrode of the second light emitting cell adjacent to the first light emitting cell.

The light emitting device according to the embodiment has at least two or more light emitting cells spaced apart from each other, so that the light emitting area can be enlarged and the light emitting efficiency can be increased.

In addition, the light emitting device according to the embodiment has an advantage in that the luminous efficiency can be improved and the flicker can be reduced by the first and second light emitting structures, which are arranged in each of at least two light emitting cells.

1 is a perspective view illustrating a light emitting device according to an embodiment.
FIG. 2 is a perspective view showing an embodiment of connection methods of the first through fourth light emitting cells shown in FIG. 1. FIG.
FIG. 3 is a cross-sectional view showing an embodiment of a cut surface of the first and second light emitting cells shown in FIG. 2. FIG.
4 is an operation diagram showing the light emitting operation when the positive and negative power are applied to the first and second light emitting cells shown in FIG.
5 is an operation diagram showing a light emitting operation when the negative power is applied to the first and second light emitting cells shown in FIG.
6 is a perspective view illustrating a light emitting device package including the light emitting device according to the embodiment.
7 is a perspective view illustrating a lighting device including a light emitting device according to an embodiment.
8 is a cross-sectional view showing an AA section of the illumination device of FIG.
9 is an exploded perspective view showing a first embodiment of a liquid crystal display device including a light emitting device according to an embodiment.
10 is an exploded perspective view showing a second embodiment of a liquid crystal display device including a light emitting device according to an embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of an example of the present invention, and a method for accomplishing the same will become apparent with reference to the embodiments described below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. To fully disclose the scope of the invention to a person skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when inverting an element shown in the figures, an element described as "below" or "beneath" of another element may be placed "above" another element. Thus, the exemplary term "below" can include both downward and upward directions. The elements can also be oriented in different directions, so that spatially relative terms can be interpreted according to orientation.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.

Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.

Further, the angle and direction mentioned in the description of the structure of the light emitting device in the embodiment are based on those shown in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

1 is a perspective view illustrating a light emitting device according to an embodiment.

1, the light emitting device 100 includes first and second light emitting structures 120 and 130 including at least a first light emitting structure 120 and a second light emitting structure 130 at least partially overlapping the support member 110 and the support member 110, And light emitting cells BD1 to BD4.

Support members 110 may be formed of a conductive substrate or an insulating substrate, e.g., sapphire (Al ₂ O _3), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, and Ga ₂ 0 ₃ < / RTI >

The support member 110 may be wet-cleaned to remove impurities on the surface, and the support member 110 may be patterned with a patterned sapphire substrate (PSS) to improve the light extraction effect , But is not limited thereto.

In addition, the support member 110 can be made of a material that facilitates the release of heat and improves the thermal stability.

On the other hand, an anti-reflection layer (not shown) for improving light extraction efficiency may be disposed on the support member 110. The anti-reflection layer is called an anti-reflective coating layer. The interference phenomenon between the reflected lights is used. That is, the phase of the light reflected from the other interface is shifted by 180 degrees so as to cancel each other, so that the intensity of the reflected light is weakened. However, the present invention is not limited thereto.

The buffer layer 112 may be disposed on the supporting member 110 to mitigate lattice mismatch between the supporting member 110 and the first light emitting structure 120 and to facilitate growth of the plurality of semiconductor layers.

The buffer layer 112 can be grown as a single crystal on the support member 110 and the buffer layer 112 grown from the single crystal can improve the crystallinity of the light emitting structure 120 grown on the buffer layer 112.

In addition, the buffer layer 112 may be formed of a structure including an AlInN / GaN laminated structure including AlN and GaN, an InGaN / GaN laminated structure, and a laminated structure of AlInGaN / InGaN / GaN.

Although the first to fourth light emitting cells BD1 to BD4 have the same structure, the structure and size, that is, the width and the thickness may be different, but the present invention is not limited thereto.

In this case, the first and second light emitting structures 120 and 130 included in the first through fourth light emitting cells BD1 through BD4 may have a stacked structure. In the following description, the structure of the first light emitting cell BD1 In the embodiment, the first to fourth light emitting cells BD1 to BD4, that is, the four light emitting cells are shown as being partitioned, but the number and position are not limited.

The first light emitting structure 120 of the first light emitting cell BD1 includes a first active layer 124 between the first semiconductor layer 122 and the second semiconductor layer 126 and between the first and second semiconductor layers 122 and 126 ).

The second light emitting structure 130 may include a second active layer 134 between the third semiconductor layer 132, the fourth semiconductor layer 136, and the third and fourth semiconductor layers 132 and 136 .

First, the first semiconductor layer 122 of the first light emitting structure 120 may be disposed on the support member 110 or the buffer layer 112 and may be implemented as an n-type semiconductor layer.

In this case, when the first semiconductor layer 122 is a nitride-based semiconductor layer, for example, a composition formula of In _x Al _y Ga _{1 -xy} N (0? X? 1, 0? Y? 1, 0? X + For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN or the like and may be doped with an n-type dopant such as Si, Ge, Sn, .

In addition, when the first semiconductor layer 122 is a zinc-oxide semiconductor layer, for example, In _x Al _y Zn _1-xy N (0? X? 1, 0? Y? 1, 0? X + Semiconductor materials having a composition formula, for example ZnO, AlO, AlZnO, InZnO, InO, InAlZnO. AlInO, and the like. For example, n-type dopants such as Si, Ge, Sn, Se, and Te can be doped.

A first active layer 124 may be disposed on the first semiconductor layer 122. The first active layer 124 may be formed of a single or multiple quantum well structure or a quantum well structure using a Group III- A quantum-wire structure, a double junction structure, or a quantum dot structure.

The first active layer 124 when formed of a quantum well structure of the nitride-based semiconductor layer for _{example, In x Al y Ga 1 -x-} y N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤ 1) and a barrier layer having a composition formula of In _a Al _b Ga _1-ab N (0? A? ₁ , 0? B? ₁ , 0? A + b? 1) It can have a well structure.

In addition, the first active layer 124 when formed of a quantum well structure of a zinc oxide semiconductor layer for _{example, In x Al y Zn 1 -x-} y N (0≤x≤1, 0 ≤y≤1, 0≤x a barrier layer having a compositional formula of + well layers and _{in x Al y Zn 1 -x- y} N (0≤a≤1, 0 ≤b≤1, 0≤a + b≤1) having a composition formula of y≤1) Lt; RTI ID = 0.0 > and / or < / RTI >

The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

When the first active layer 124 has a multiple quantum well structure, each well layer (not shown) and a barrier layer (not shown) may have different compositions, thicknesses, and band gaps, but are not limited thereto.

A conductive clad layer (not shown) may be formed on and / or below the first active layer 124. The conductive clad layer (not shown) may be formed of, for example, AlGaN-based or AlZnO-based semiconductor, and may have a band gap larger than the band gap of the first active layer 124.

The second semiconductor layer 126 may be disposed on the first active layer 124 and the second semiconductor layer 126 may be a p-type semiconductor layer injecting holes into the first active layer 124.

In this case, when the second semiconductor layer 126 is a nitride-based semiconductor layer, for example, the second semiconductor layer 126 may be formed of In _x Al _y Ga _{1 -xy} N (0? X? 1, 0? Y? 1, 0? X + For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN and the like, and a p-type dopant such as Mg, Zn, Ca, Sr, .

In the case where the second semiconductor layer 126 is a zinc oxide based semiconductor layer, for example, In _x Al _y Zn _{1 -xy} N (0? X? 1, 0? Y? 1, 0? X + Semiconductor materials having a composition formula, for example ZnO, AlO, AlZnO, InZnO, InO, InAlZnO. AlInO, and the like. For example, a p-type dopant such as Mg, Zn, Ca, Sr, Ba, or the like may be doped.

The first semiconductor layer 122, the first active layer 124 and the second semiconductor layer 126 may be formed using a metal organic chemical vapor deposition (MOCVD) method, a chemical vapor deposition A vapor deposition method, a vapor deposition method, a plasma enhanced chemical vapor deposition (PECVD) method, a molecular beam epitaxy (MBE) method, a hydride vapor phase epitaxy (HVPE) method or a sputtering method But the present invention is not limited thereto.

In addition, the doping concentrations of the dopants in the first semiconductor layer 122 and the second semiconductor layer 126 can be formed uniformly or nonuniformly. That is, the plurality of semiconductor layers may be formed to have various doping concentration distributions, but the invention is not limited thereto.

The first semiconductor layer 122 may be a p-type semiconductor layer, the second semiconductor layer 126 may be an n-type semiconductor layer, and the n-type or p-type semiconductor layer 126 may be formed on the second semiconductor layer 126. [ A semiconductor layer (not shown) including a layer may be formed. Accordingly, the first light emitting structure 120 may have at least one of np, pn, npn, and pnp junction structures.

The third semiconductor layer 132 of the second light emitting structure 130 may be disposed on the second semiconductor layer 126 of the first light emitting structure 120 and may be disposed on the same n- Layer. ≪ / RTI >

A fourth semiconductor layer 136 may be disposed on the second active layer 136 and a fourth semiconductor layer 136 may be disposed on the second active layer 134. The second semiconductor layer 136 may be disposed on the third semiconductor layer 132, Type semiconductor layer that is the same as the semiconductor layer 126.

The third and fourth semiconductor layers 132 and 136 and the second active layer 134 may be formed in the same composition and the same manner as the first and second semiconductor layers 122 and 126 and the first active layer 124, The description will be omitted.

In addition, the first and second light emitting structures 120 and 130 may be formed by sequentially performing the processes. That is, the first and second light emitting structures 120 and 130 may be formed as a single body, and the first and second light emitting structures 120 and 130 may be formed such that light generated from the first and second active layers 124 and 134 Wavelength, and the amount of light may also be different.

The first electrode 142 is disposed on the third semiconductor layer 132 of the second light emitting structure 130 and the first electrode 142 is electrically connected to the second semiconductor layer 126 of the first light emitting structure 120. [ .

Accordingly, the first electrode 142 is electrically connected to the second and third semiconductor layers 126 and 132, and can supply power of the same polarity.

The second electrode 146 may be disposed on the first semiconductor layer 122 of the first light emitting structure 120 and the fourth semiconductor layer 136 of the second light emitting structure 130.

The second electrode 146 is disposed on the first electrode part 143 disposed on the first semiconductor layer 122 of the first light emitting structure 120 and on the fourth semiconductor layer 136 of the second light emitting structure 130 And the connection electrode unit 145 may be disposed between the first and second electrode units 144 and 144, respectively.

The first and second electrode portions 143 and 144 and the connection electrode 145 may be formed integrally with each other and the second electrode 146 may be formed by separating the first and second electrode portions 143 and 144 , The first and second electrode portions 143 and 144 may be connected by wires. However, the present invention is not limited thereto.

At this time, the insulating layer 149 may be formed on at least one side of the first and second light emitting structures 120 and 130, and the connecting electrode part 145 may be disposed on the side surface of the insulating layer 149, , It is possible to prevent short-circuiting of the two light emitting structures 120 and 130.

Although the second electrode 146 is shown as being disposed on the first and fourth semiconductor layers 122 and 136 of each of the first to fourth light emitting cells BD1 to BD4 in the embodiment, Each of the second electrodes 146 may be electrically connected to the first electrode 142 of the adjacent light emitting cells according to the connection method of the light emitting diodes BD1 to BD4 and will be described in detail with reference to FIG.

In an embodiment, the first and second light emitting structures 120 and 130 emit light in the first light emitting structure 120 when a positive (+) power source is input upon the input of an ac power source, for example, a commercial AC power source, The second light emitting structure 130 may emit light when a power source is input.

At this time, a light-transmitting electrode (not shown) may be disposed on the fourth semiconductor layer 136 of the second light emitting structure 130. When the light-transmitting electrode is disposed on the fourth semiconductor layer 136, The current applied to the second electrode portion 144 is uniformly applied to the fourth semiconductor layer 136, and a pattern (not shown) may be formed, but the present invention is not limited thereto.

The first through fourth light emitting cells BD1 through BD4 shown in FIG. 1 may be connected in series, parallel, or series-parallel combination, but are not limited thereto.

At least one light emitting cell may be disposed between the first and second light emitting cells BD1 and BD2 and between the third and fourth light emitting cells BD3 and BD4. And the third and fourth light emitting cells BD3 and BD4 may be arranged in an array.

That is, the light emitting device 100 may be formed so that a plurality of arrays have a plurality of matrixes, and may be connected in series, parallel, or series / parallel combination according to the method of coupling each light emitting cell.

At this time, the light emitting device 100 may be connected in zigzags or concentric circles depending on the electrode connection state of at least two light emitting cells, and the electrode connection state is not limited.

FIG. 2 is a perspective view showing an embodiment of connection methods of the first through fourth light emitting cells shown in FIG. 1. FIG.

Referring to FIG. 2, the light emitting device 100 may include first through fourth light emitting cells BD1 through BD4 connected in series.

In the embodiment, the first to fourth light emitting cells BD1 to BD4 are connected in series in the order of the first light emitting cells BD1 to the fourth light emitting cells BD4.

In this case, when the first electrode 142 and the second electrode part 144 of the fourth light emitting cell BD4 are disposed in a light emitting device package (not shown) disposed in the first light emitting cell BD1, A pad electrode (not shown) that is wire-bonded to the first and second lead frames (not shown) included in the first and second lead frames may be formed.

Here, the first electrode part 143 of the first light emitting cell BD1 and the first electrode 142 of the second light emitting cell BD2, the first electrode part 143 of the second light emitting cell BD2, A connection electrode 142 is formed between the first electrode 142 of the third light emitting cell BD3 and the first electrode 142 of the third light emitting cell BD3 and the first electrode 142 of the fourth light emitting cell BD4, And the first to fourth light emitting cells BD1 to BD4 may be connected in series.

At this time, the connection electrode 148 may be disposed on the support member 110 or the buffer layer 112, but is not limited thereto.

An insulating layer 149 is disposed on one side of the first to fourth light emitting cells BD1 to BD4 to prevent a short between the first and second light emitting structures 120 and 130. [

The first and second light emitting cells BD1 and BD2 and the third and fourth light emitting cells BD3 and BD4 are connected in series to each other. And the first and second light emitting cells BD1 and BD2 and the third and fourth light emitting cells BD3 and BD4 may be connected in parallel and are not limited thereto.

FIG. 3 is a cross-sectional view showing an embodiment of a cut surface of the first and second light emitting cells shown in FIG. 2. FIG.

FIG. 3 is a cross-sectional view showing the first and second light emitting cells BD1 and BD2 shown in FIG. 2 connected in series. As shown in FIG. 2, the first and second light emitting cells BD1 and BD2, Are connected in series with the third and fourth light emitting cells BD3 and BD4.

Referring to FIG. 3, the first and second light emitting cells BD1 and BD2 may be spaced apart from each other and disposed on the support member 110 or the buffer layer 112. Referring to FIG.

The structure of the first and second light emitting cells BD1 and BD2 shown in FIG. 3 has been described with reference to FIGS. 1 and 2, and a detailed description thereof will be omitted.

The first electrode 142 of the first light emitting cell BD1 may be electrically connected to the second semiconductor layer 126 and the third semiconductor layer 132. [

A hole (not shown) is formed in the third semiconductor layer 132 to etch a portion where the first electrode 142 is disposed and to electrically connect the first electrode 142 to the second semiconductor layer 126 at the same time. .

That is, the width of the first electrode 142, which is electrically contacted with the second semiconductor layer 126, may be different from the width of the electrical contact on the third semiconductor layer 132, but is not limited thereto.

The second electrode 242 of the second light emitting cell BD2 has the same structure as the first electrode 142 and can be electrically connected to the second semiconductor layer 226 and the third semiconductor layer 232 have.

The second electrode 146 of the first light emitting cell BD1 includes a first electrode portion 143 electrically connected to the first semiconductor layer 122 and a second electrode portion electrically connected to the fourth semiconductor layer 136 144 and the first and second electrode portions 143, 144. The connection electrode portion 145 electrically connects the first and second electrode portions 144, 144 and the first and second electrode portions 143, 144 to each other.

The first electrode 142 of the second light emitting cell BD2 may be electrically connected to the first electrode unit 143 of the first light emitting cell BD1 by the connection electrode 148. [

The first electrode unit 143 of the second light emitting cell BD2 is electrically connected to the first electrode 142 and the connection electrode 148 of the third light emitting cell BD3 shown in FIG. .

Although the connection electrode 148 is shown as a separate electrode, the connection electrode 148 may be formed integrally with the second electrode 146, and will be described as a separate electrode from the second electrode 146 for convenience of explanation.

At this time, an insulating layer 149 may be disposed between the connection electrode portion 148 and the first and second light emitting structures 120 and 130.

That is, the insulating layer 149 can prevent a short between the first and second light emitting structures 120 and 130 by the connection electrode part 148.

The insulating layer 148 may include any one of electrically insulating materials such as SiO2, SiOx, SiOxNy, Si3N4, Al2O3, TiOx, TiO2, Ti, Al and Cr.

In addition, the insulating layer 148 may be disposed on the support member 110 or the buffer layer 112, but is not limited thereto.

The first semiconductor layers 122 and 222 constituting the first and second light emitting cells BD1 and BD2 are completely separated from each other. A layer 122 may be formed wherein the insulating layer 148 may be disposed on the first semiconductor layer 122 between the first and second light emitting cells 122 and 222 but is not limited thereto.

At least one light emitting cell may be formed between the first and second light emitting cells BD1 and BD2 shown in FIG. 2 and may have the same connection state as the electrode connection of the first and second light emitting cells BD1 and BD2 .

The electrode connections of the first and second light emitting cells BD1 and BD2 shown in FIG. 2 are one embodiment, and they may have different electrode connections according to the parallel connection, but are not limited thereto.

The first and second electrodes 142 and 146 may be formed of a conductive material such as In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, IZO, IZO, IGZO, IGTO, IGZO, IGZO, IGZO, IGZO, IGZO, IGZO, AZO, ATO, and the like, but is not limited thereto.

The electrode connections of the first and second light emitting cells BD1 and BD2 shown in FIG. 2 are only one embodiment, and the insulating layer 148 may not be disposed according to the embodiment, The electrodes 142 and 146 may be connected to each other, but the present invention is not limited thereto.

FIG. 4 is a view illustrating an operation of emitting light when positive polarity power is applied to the first and second light emitting cells shown in FIG. 3, FIG. 5 is a view illustrating a light emitting operation when the negative polarity power is applied to the first and second light emitting cells shown in FIG. Fig.

4 and 5 illustrate that the AC power source AC is electrically connected to the first electrode 142 of the first light emitting cell BD1 on one side and the second electrode 142 of the second light emitting cell BD4 on the other side is electrically connected to the first electrode 142 of the first light emitting cell BD1, May be electrically connected to the electrode (146).

4 and 5 show only the first and second light emitting cells BD1 and BD2 and therefore the first electrode 142 of the first light emitting cell BD1 and the second electrode 142 of the second light emitting cell BD2 146 may be described as being applied with an AC power source AC.

4, when the AC power source AC, that is, the positive polarity power source (+) half-cell is applied to the first electrode 142 of the first light emitting cell BD1, the light emitting device 100 emits light 120 may generate light in the first active layer 124. [

In this case, the first light emitting cell BD1 has a current path from the second semiconductor layer 126 to the first semiconductor layer 122 so that the first current I1 flows from the first electrode 142 to the second electrode The first electrode 142 of the second light emitting cell BD2 can be applied to the first electrode 142 of the second light emitting cell BD2 through the first electrode unit 143 and the connection electrode 148 of the second light emitting cell BD1.

The second light emitting cell BD2 may generate light in the first active layer 124 of the first light emitting structure 120 according to the first current I1 applied to the first electrode 142. [

That is, the second light emitting cell BD2 has a current path path for the first current I1 applied to the first electrode 142 through the connection electrode 148, so that the second current I2 flows through the second semiconductor May be applied to the connecting electrode portion 145 and the second electrode portion 144 of the second electrode 146 through the first semiconductor layer 122 from the layer 126.

That is, during the positive polarity power supply (+) half period of the AC power source AC, the current path path in which the first and second currents I1 and I2 are applied from the p-type semiconductor layer to the n-type semiconductor layer can be formed.

5, the light emitting device 100 includes a second electrode unit 144 included in the second electrode 146 of the second light emitting cell BD2, that is, an AC power source, that is, The third active layer 134 of the second light emitting structure 130 may emit light.

In this case, the second light emitting cell BD2 has a current path from the fourth semiconductor layer 136 to the third semiconductor layer 132 so that the third current I3 flows from the second electrode unit 144 to the first electrode May be applied to the second electrode 146 of the first light emitting cell BD1 through the first electrode 142 and the connection electrode 148. [

The first light emitting cell BD1 is connected to the second active layer 134 of the second light emitting structure 130 according to the third current I3 applied to the second electrode portion 144 included in the second electrode 146. [ ) Can generate light.

That is, the current path path for the third current I3 applied to the second electrode unit 144 through the first electrode unit 143 and the connection electrode 148 is formed in the first light emitting cell BD1, 4 current I4 may be applied to the first electrode 142 from the fourth semiconductor layer 136 through the third semiconductor layer 132. [

That is, the current path path in which the third and fourth currents I3 and I4 are applied from the p-type semiconductor layer to the n-type semiconductor layer can be formed during the (-) half period of the positive polarity AC power source AC.

In this case, when the negative power source (-) of the AC power source (AC) is applied, the potential path level of the n-type semiconductor layer becomes very lower than the potential level of the p-type semiconductor layer, Electrons and holes are supplied to the second active layer 134 of the first and second light emitting cells BD1 and BD2 to generate light.

Although the first and second light emitting cells BD1 and BD2 have the same size in the embodiment, the width of the first light emitting cell BD1 may be 1 to 2 times the width of the second light emitting cell BD2. And may be changed according to the entire size of the light emitting device 100, but is not limited thereto.

6 is a perspective view illustrating a light emitting device package including the light emitting device according to the embodiment.

6 is a perspective view showing a part of the light emitting device package 300. In the embodiment, the light emitting device package 300 is shown as a top view type, but it may be a side view type and is not limited thereto.

Referring to FIG. 6, the light emitting device package 300 may include a body 320 having a light emitting element 310 and a light emitting element 310 disposed thereon.

The body 320 may include a first partition 322 disposed in a first direction (not shown) and a second partition 324 disposed in a second direction (not shown) that intersects the first direction And the first and second barrier ribs 322 and 324 may be integrally formed with each other, and may be formed by injection molding, etching, or the like.

That is, the first and second barrier ribs 322 and 324 may be formed of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), AlO _x , , photo sensitive glass), polyamide 9T (PA9T), new geo syndiotactic polystyrene (SPS), metal materials, sapphire (Al ₂ O _3), beryllium oxide (BeO), ceramic, and a printed circuit board (PCB, printed circuit board ). ≪ / RTI >

The shape of the top surface of the first and second barrier ribs 322 and 324 may have various shapes such as a triangle, a quadrangle, a polygon, and a circular shape depending on the use and design of the light emitting device 310, but is not limited thereto.

The first and second barrier ribs 322 and 324 form a cavity s in which the light emitting device 310 is disposed and the cavity s may have a cup shape or a concave shape. The first and second barrier ribs 322 and 324 forming the cavity s may be inclined downward.

The plane shape of the cavity s may have various shapes such as a triangular shape, a square shape, a polygonal shape, and a circular shape, but is not limited thereto.

The first and second lead frames 313 and 314 may be formed of a metal material such as titanium (Ti), copper (Au), chrome (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), phosphorus (P) And may include one or more materials or alloys of indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium (Ge), hafnium (Hf), ruthenium (Ru) .

The first and second lead frames 313 and 314 may be formed to have a single layer or a multilayer structure, but are not limited thereto.

The inner surfaces of the first and second barrier ribs 322 and 324 are inclined at a predetermined inclination angle with respect to any one of the first and second lead frames 313 and 314, The reflection angle of the emitted light can be changed, and thus the directivity angle of the light emitted to the outside can be controlled. The concentration of light emitted to the outside from the light emitting device 310 increases as the directivity angle of light decreases, while the concentration of light emitted from the light emitting device 310 to the outside decreases as the directivity angle of light increases.

The inner surface of the body 320 may have a plurality of inclination angles, but is not limited thereto.

The first and second lead frames 313 and 314 are electrically connected to the light emitting device 310 and are respectively connected to the positive and negative poles of an external power source ). ≪ / RTI >

The light emitting device 310 is disposed on the first lead frame 313 and the second lead frame 314 is separated from the first lead frame 313. In the embodiment, Bonded to the first and second lead frames 313 and 314 by wire bonding with a second lead frame 314 and a wire (not shown).

Here, the light emitting device 310 may be bonded to the first lead frame 313 and the second lead frame 314 with different polarities.

Further, the light emitting device 310 can be wire-bonded or die-bonded to the first and second lead frames 313 and 314, respectively, and the connection method is not limited.

In the embodiment, the light emitting element 310 is disposed on the first lead frame 313, but the present invention is not limited thereto.

The light emitting element 310 may be adhered to the first lead frame 313 by an adhesive member (not shown).

An insulation dam 316 may be formed between the first and second lead frames 313 and 314 to prevent electrical shorting of the first and second lead frames 313 and 314.

In an embodiment, the isolation dam 316 may be formed in a semicircle with an upper portion, but is not limited thereto.

A cathode mark 317 may be formed on the body 313.

The light emitting device 310 may be a light emitting diode. The light emitting diode may be, for example, a colored light emitting diode that emits light such as red, green, blue, or white, or a UV (Ultra Violet) light emitting diode that emits ultraviolet light. However, A plurality of light emitting devices 310 may be mounted on the frame 313 and at least one light emitting device 310 may be mounted on the first and second lead frames 313 and 314, 310 are not limited to the number and the mounting position of the semiconductor device.

The body 320 may include a resin 318 filled in the cavity s. That is, the resin material 18 may be formed in a double molding structure or a triple molding structure, but is not limited thereto.

The resin material 318 may be formed in a film shape, and may include at least one of a phosphor and a light diffusing material. Further, a translucent material that does not include a phosphor and a light diffusion material may be used. Do not.

FIG. 7 is a perspective view showing a lighting device including a light emitting device according to an embodiment, and FIG. 8 is a cross-sectional view showing an A-A cross section of the lighting device of FIG.

In order to describe the shape of the illumination device 400 according to the embodiment in detail, the longitudinal direction Z of the illumination device 400, the horizontal direction Y perpendicular to the longitudinal direction Z, The direction Z and the horizontal direction Y and the vertical direction X perpendicular to the horizontal direction Y will be described.

8 is a cross-sectional view of the lighting apparatus 400 of FIG. 7 cut in the longitudinal direction Z and the height direction X and viewed in the horizontal direction Y. FIG.

7 and 8, the lighting apparatus 400 may include a body 410, a cover 430 coupled to the body 410, and a finishing cap 450 positioned at both ends of the body 410 have.

The light emitting device module 440 is coupled to a lower surface of the body 410. The body 410 is electrically conductive so that heat generated from the light emitting device package 444 can be emitted to the outside through the upper surface of the body 410. [ And a metal material having an excellent heat dissipation effect.

The light emitting device package 444 may have a roughness (not shown) formed in each lead frame (not shown) to improve bonding reliability and luminous efficiency, and is advantageous for designing a thin and small display device.

The light emitting device package 444 may be mounted on the PCB 442 in a multi-color, multi-row manner to form an array. The light emitting device package 444 may be mounted at equal intervals or may be mounted with various distances as required. As the PCB 442, MPPCB (Metal Core PCB) or FR4 material PCB can be used.

The cover 430 may be formed in a circular shape so as to surround the lower surface of the body 410, but is not limited thereto.

The cover 430 protects the internal light emitting device module 440 from foreign substances or the like. The cover 430 may include diffusion particles to prevent glare of the light generated in the light emitting device package 444 and uniformly emit light to the outside and may include at least one of an inner surface and an outer surface of the cover 430 A prism pattern or the like may be formed on one side. Further, the phosphor may be coated on at least one of the inner surface and the outer surface of the cover 430.

Since the light generated in the light emitting device package 444 is emitted to the outside through the cover 430, the cover 430 should have a high light transmittance and sufficient heat resistance to withstand the heat generated in the light emitting device package 444 The cover 430 is preferably made of a material including polyethylene terephthalate (PET), polycarbonate (PC), or polymethyl methacrylate (PMMA) .

The finishing cap 450 is located at both ends of the body 410 and can be used for sealing the power supply unit (not shown). In addition, the fin 450 is formed on the finishing cap 450, so that the lighting device 400 according to the embodiment can be used immediately without a separate device on the terminal from which the conventional fluorescent lamp is removed.

9 is an exploded perspective view showing a first embodiment of a liquid crystal display device including a light emitting device according to an embodiment.

9, the liquid crystal display 500 may include a liquid crystal display panel 510 and a backlight unit 570 for providing light to the liquid crystal display panel 510 in an edge-light manner.

The liquid crystal display panel 510 can display an image using the light provided from the backlight unit 570. The liquid crystal display panel 510 may include a color filter substrate 512 and a thin film transistor substrate 514 facing each other with a liquid crystal therebetween.

The color filter substrate 512 can realize the color of an image to be displayed through the liquid crystal display panel 510.

The thin film transistor substrate 514 is electrically connected to a printed circuit board 518 on which a plurality of circuit components are mounted via a driving film 517. The thin film transistor substrate 514 may apply a driving voltage provided from the printed circuit board 518 to the liquid crystal in response to a driving signal provided from the printed circuit board 518. [

The thin film transistor substrate 514 may include a thin film transistor and a pixel electrode formed as a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 570 includes a light emitting device module 520 that outputs light, a light guide plate 530 that changes the light provided from the light emitting device module 520 into a surface light source and provides the light to the liquid crystal display panel 510, A plurality of films 550, 566, and 564 that uniformly distribute the luminance of light provided from the light guide plate 530 and improve vertical incidence, and a reflective sheet (not shown) that reflects light emitted to the rear of the light guide plate 530 to the light guide plate 530 540).

The light emitting device module 520 may include a light emitting device array including a plurality of light emitting device packages 524 and a plurality of light emitting device packages 524 mounted on the PCB substrate 522 to form an array.

The backlight unit 570 includes a diffusion film 566 for diffusing light incident from the light guide plate 530 toward the liquid crystal display panel 510 and a prism film 550 for enhancing vertical incidence by condensing the diffused light And may include a protective film 564 for protecting the prism film 550. [

10 is an exploded perspective view showing a second embodiment of a liquid crystal display device including a light emitting device according to an embodiment.

Note that, in FIG. 10, the parts shown and described in FIG. 9 are not repeatedly described in detail.

10, the liquid crystal display 600 may include a liquid crystal display panel 610 and a backlight unit 670 for providing light to the liquid crystal display panel 610 in a direct manner.

Since the liquid crystal display panel 610 is the same as that described with reference to FIG. 9, detailed description is omitted.

The backlight unit 670 includes a plurality of light emitting element modules 623, a reflective sheet 624, a lower chassis 630 in which the light emitting element module 623 and the reflective sheet 624 are accommodated, And a plurality of optical films 660 disposed on the diffuser plate 640.

The light emitting device module 623 may include a PCB substrate 621 for mounting a plurality of light emitting device packages 622 and a plurality of light emitting device packages 622 to form an array.

Particularly, the light emitting device package 622 has a roughness 170 formed in a region where the lead frames 140 and 142 are wire-bonded by the light source 130 and the wire 150, And a slim, compact, and more reliable backlight unit 670 can be realized.

The reflective sheet 624 reflects light generated from the light emitting device package 622 in a direction in which the liquid crystal display panel 610 is positioned, thereby improving light utilization efficiency.

The light emitted from the light emitting element module 623 is incident on the diffusion plate 640 and the optical film 660 is disposed on the diffusion plate 640. The optical film 660 is composed of a diffusion film 666, a prism film 650, and a protective film 664.

Here, the illumination device 400 and the liquid crystal display devices 500 and 600 may be included in the illumination system, and the illumination device may include the light emitting device package and the illumination device.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It will be appreciated that various modifications and applications are possible without departing from the scope of the present invention. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100: light emitting element 110: support member
120: first light emitting structure 130: second light emitting structure
BD1 to BD4: First to fourth light emitting cells 300: Light emitting device package

Claims (10)

A first semiconductor layer, a second semiconductor layer, and a first active layer between the first and second semiconductor layers; and a third semiconductor layer, a fourth semiconductor layer, and a third active layer on the first light- A plurality of light emitting cells including a second light emitting structure including a second active layer between the four semiconductor layers, the plurality of light emitting cells being partitioned from each other ;
A first electrode electrically connected to the second and third semiconductor layers of each of the plurality of light emitting cells; And
And a second electrode electrically connected to the first and fourth semiconductor layers of each of the plurality of light emitting cells,
The second electrode of the first light emitting cell among the plurality of light emitting cells,
A second electrode of the first light emitting cell is electrically connected to the first electrode of the second light emitting cell adjacent to the first light emitting cell,
An insulating layer disposed on one side of at least one of the first and second light emitting cells; And
And a connection electrode disposed on the insulating layer and electrically connected to the second electrode of the first light emitting cell and the first electrode of the second light emitting cell. The method according to claim 1,
The first and third semiconductor layers may be formed of a single-
Doped with a first dopant,
Wherein the second and fourth semiconductor layers comprise
And a second dopant different from the first dopant. delete delete The method according to claim 1,
And a support member for supporting the light emitting structure,
Wherein the insulating layer
And a light emitting element disposed on the support member between the first and second light emitting cells. The light emitting device of claim 1,
And the width of the second light emitting cell is 1 to 2 times the width of the second light emitting cell. The light emitting device according to claim 1,
Connected in series with each other,
And a pad electrode disposed on at least one of the first electrode of the first light emitting cell and the second electrode of the last light emitting cell among the plurality of light emitting cells. delete delete delete

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