KR20130062769A - Light emitting device - Google Patents
Light emitting device Download PDFInfo
- Publication number
- KR20130062769A KR20130062769A KR1020110129199A KR20110129199A KR20130062769A KR 20130062769 A KR20130062769 A KR 20130062769A KR 1020110129199 A KR1020110129199 A KR 1020110129199A KR 20110129199 A KR20110129199 A KR 20110129199A KR 20130062769 A KR20130062769 A KR 20130062769A
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- South Korea
- Prior art keywords
- layer
- light emitting
- semiconductor
- emitting device
- active layer
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Abstract
The embodiment may include a first semiconductor structure including a first active layer, a first semiconductor layer including a first active layer, and a first semiconductor layer, a third semiconductor layer, and a third semiconductor layer between the first and second semiconductor layers. A light emitting structure comprising a second semiconductor structure disposed between a fourth semiconductor layer and the third and fourth semiconductor layers and including a second active layer having a quantum well having a different energy band gap from the quantum well of the first active layer; Any one of the first and second active layers is disposed between a first electrode electrically connected to the first and fourth semiconductor layers, a second electrode electrically connected to the second and third semiconductor layers, and the first and second semiconductor structures. It provides a light emitting device comprising a polarization layer for transmitting the light incident on the and reflecting and refracting the light incident on the other.
Description
The embodiment relates to a light emitting device.
LED (Light Emitting Diode) is a device that converts electrical signals into infrared, visible light or light using the characteristics of compound semiconductors. It is used in household appliances, remote controls, display boards, The use area of LED is becoming wider.
In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.
On the other hand, since the LED has a rectifying characteristic of a general diode, when connected to an AC power source is repeated on / off according to the direction of the current does not generate light continuously, there is a risk of being damaged by the reverse current.
Therefore, in recent years, various researches for using LEDs directly connected to AC power sources have been conducted.
The embodiment provides a light emitting device which is easy to prevent loss of light emitted from the first and second semiconductor structures.
The light emitting device according to the embodiment is disposed on a first semiconductor structure including a first active layer, a first semiconductor layer including a first active layer, a second semiconductor layer, and the first and second semiconductor layers, and a third semiconductor structure. A second semiconductor structure disposed between the semiconductor layer, the fourth semiconductor layer and the third and fourth semiconductor layers, the second semiconductor structure including a second active layer having a quantum well having an energy band gap different from that of the quantum well of the first active layer; The light emitting structure is disposed between the first electrode electrically connected to the first and fourth semiconductor layers, the second electrode electrically connected to the second and third semiconductor layers, and the first and second semiconductor structures. It may include a polarized reflective layer that transmits the light incident from any one of the active layer, and reflects and refracts the light incident from the other.
The light emitting device according to the embodiment transmits the light incident on any one of the first and second semiconductor structures by disposing a polarization reflection layer causing polarized reflection between the first and second semiconductor structures, and transmits the light incident on the other. There is an advantage in that light loss can be suppressed by reflecting and refracting so as not to absorb light in any semiconductor structure.
In addition, the light emitting device according to the embodiment has an advantage of reducing the light efficiency variation with respect to the light emitted from the first and second semiconductor structures.
1 is a perspective view showing a light emitting device according to an embodiment.
2 is a cross-sectional perspective view showing a cut surface of the light emitting device shown in FIG.
3 is an enlarged view of 'A' illustrated in FIG. 2 according to an embodiment.
4 is a perspective view showing a light emitting device package including a light emitting device according to the embodiment.
5 is a perspective view showing a lighting apparatus including a light emitting device according to the embodiment.
6 is a cross-sectional view showing a cross-section AA of the lighting device of FIG.
7 is an exploded perspective view showing a first embodiment of a liquid crystal display including a light emitting device according to the embodiment.
8 is an exploded perspective view illustrating a second embodiment of a liquid crystal display including a light emitting device according to the embodiment.
Advantages and features of the inventive examples, and methods of achieving them will become apparent with reference to the embodiments described below in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be embodied in various forms, and the present embodiments are merely provided to make the disclosure of the present invention complete, and those of ordinary skill in the art to which the present invention pertains. It is provided to fully inform the scope of the invention, and the invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.
The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when flipping a device shown in the figure, a device described as "below" or "beneath" of another device may be placed "above" of another device. Thus, the exemplary term "below" can include both downward and upward directions. The device can also be oriented in other directions, so that spatially relative terms can be interpreted according to orientation.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.
Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used in a sense that can be commonly understood by those skilled in the art. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.
The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.
Further, the angle and direction mentioned in the description of the structure of the light emitting device in the embodiment are based on those shown in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.
1 is a perspective view showing a light emitting device according to the embodiment, Figure 2 is a sectional perspective view showing a cut surface of the light emitting device shown in Figure 1, Figure 3 is an enlarged view according to an embodiment 'A' shown in FIG. to be.
Referring to FIGS. 1 and 2, the
The
The
In addition, the
Meanwhile, an anti-reflection layer (not shown) may be disposed on the
The
The
In addition, the
The light emitting structure (not shown) may be disposed on the
In an embodiment, the light emitting structure may be divided into a plurality of light emitting cells (not shown), but is not limited thereto.
In this case, the light emitting structure may have a structure in which the first and
The
The
First, the
In this case, when the
In addition, when the
The first
The first
In addition, the first
The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.
When the first
A conductive clad layer (not shown) may be formed on or under the first
Here, the first
In the embodiment, the
The
In this case, when the
In addition, when the
The
In addition, the doping concentrations of the dopants in the
In addition, the
The
In addition, a second
Here, the second
Since the third and fourth semiconductor layers 132 and 136 and the second
Here, the first and
The first and
Here, one side of the first and
In this case, an insulating
In this case, the insulating
That is, in the
Here, when the
In addition, the
In an embodiment, the first and
In the exemplary embodiment, the
In this case, a light transmissive electrode (not shown) may be disposed on the
In addition, the
Meanwhile, a method of removing a part of the first and second
The first and
In addition, at least one of the first and
The
The
In the embodiment, the
The
The
3, the
The plurality of
The
On the other hand, the
For example, the higher the composition of AlN, the larger the bandgap, and the higher the composition of InN, the smaller the bandgap, so that the bandgap of the layer containing InN is the lowest and the bandgap of the layer containing AlN can be the largest. have. Therefore, the layer containing AlN having the largest band gap and the layer containing InN having the smallest band gap can be formed in contact with each other.
On the other hand, the layer containing AlN having a small lattice constant generates tensile stress, and the layer containing InN having a large lattice constant may generate compressive stress. Therefore, when layers including AlN and layers including InN are alternately stacked, stress between layers can be alleviated.
The polarized
That is, when the
In addition, at least one of the plurality of
In this case, the width (not shown) of the
The
That is, the
4 is a perspective view showing a light emitting device package including a light emitting device according to the embodiment.
4 is a transparent perspective view illustrating a part of the light emitting
Referring to FIG. 4, the light emitting
The body 320 may include a first partition 322 disposed in a first direction (not shown) and a second partition 324 disposed in a second direction (not shown) that crosses the first direction. The first and second barrier ribs 322 and 324 may be integrally formed with each other, and may be formed by injection molding, an etching process, and the like.
That is, the first and second barrier ribs 322 and 324 may be formed of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), AlO x , and liquid crystal polymer (PSG). , photo sensitive glass, polyamide 9T (PA9T), neogeotactic polystyrene (SPS), metal, sapphire (Al 2 O 3 ), beryllium oxide (BeO), ceramic, and printed circuit board (PCB) It may be formed of at least one of).
The top shape of the first and second barrier ribs 322 and 324 may have various shapes such as triangles, squares, polygons, and circles, depending on the use and design of the
In addition, the first and second partitions 322 and 324 form a cavity s in which the
In addition, the planar shape of the cavity s may have various shapes such as triangles, squares, polygons, and circles, without being limited thereto.
First and second leadframes 313 and 314 may be disposed on the lower surface of the body 320, and the first and second leadframes 313 and 314 may be made of a metal material, for example, titanium (Ti) or copper. (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), phosphorus (P), aluminum (Al), It may include one or more materials or alloys of indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium (Ge), hafnium (Hf), ruthenium (Ru), and iron (Fe). .
In addition, the first and second lead frames 313 and 314 may be formed to have a single layer or a multilayer structure, but the present invention is not limited thereto.
Inner surfaces of the first and second barrier ribs 322 and 324 are formed to be inclined at a predetermined inclination angle with respect to any one of the first and second lead frames 313 and 314, and the
The inner surface of the body 320 may have a plurality of inclination angles, but is not limited thereto.
The first and second lead frames 313 and 314 are electrically connected to the
In an embodiment, the
Here, the
In addition, the
In the embodiment, the
The
Here, an insulating dam 316 may be formed between the first and second lead frames 313 and 314 to prevent electrical shorts (shorts) of the first and second lead frames 313 and 314.
In an embodiment, the insulating dam 316 may be formed in a semicircular shape, but the embodiment is not limited thereto.
A cathode mark 317 may be formed on the body 313.
The
The body 320 may include a resin 318 filled in the cavity s. That is, the resin material 18 may be formed in a double molding structure or a triple molding structure, but is not limited thereto.
In addition, the resin material 318 may be formed in a film form, and may include at least one of a phosphor and a light diffusing material, and a translucent material that does not include the phosphor and the light diffusing material may be used. Do not.
5 is a perspective view illustrating a lighting apparatus including a light emitting device according to an embodiment, and FIG. 6 is a cross-sectional view illustrating an A-A cross section of the lighting apparatus of FIG. 5.
In order to describe the shape of the
That is, FIG. 6 is a cross-sectional view of the
5 and 6, the
The light emitting
The light emitting device package 444 has roughness (not shown) formed on each lead frame (not shown), so that the reliability and luminous efficiency of bonding can be improved, and it is advantageous to design a slim and compact display device.
The light emitting device package 444 may be mounted on the PCB 442 in multiple colors and in multiple rows to form an array. The light emitting device package 444 may be mounted at the same interval or may be mounted with various separation distances as necessary to adjust brightness. As the PCB 442, a metal core PCB (MPPCB) or a PCB made of FR4 may be used.
The
The
On the other hand, since the light generated from the light emitting device package 444 is emitted to the outside through the
7 is an exploded perspective view showing a first embodiment of a liquid crystal display including a light emitting device according to the embodiment.
7, the liquid crystal display 500 may include a liquid crystal display panel 510 and a backlight unit 570 for providing light to the liquid crystal display panel 510 in an edge-light manner.
The liquid crystal display panel 510 may display an image by using light provided from the backlight unit 570. The liquid crystal display panel 510 may include a color filter substrate 512 and a thin film transistor substrate 514 facing each other with a liquid crystal interposed therebetween.
The color filter substrate 512 may implement colors of an image displayed through the liquid crystal display panel 510.
The thin film transistor substrate 514 is electrically connected to the printed circuit board 518 on which a plurality of circuit components are mounted through the driving film 517. The thin film transistor substrate 514 may apply a driving voltage provided from the printed circuit board 518 to the liquid crystal in response to the driving signal provided from the printed circuit board 518.
The thin film transistor substrate 514 may include a thin film transistor and a pixel electrode formed of a thin film on another substrate of a transparent material such as glass or plastic.
The backlight unit 570 may convert the light provided from the light emitting device module 520, the light emitting device module 520 into a surface light source, and provide the light guide plate 530 to the liquid crystal display panel 510. Reflective sheet for reflecting the light emitted from the rear of the light guide plate 530 and the plurality of films 550, 566, 564 to uniform the luminance distribution of the light provided from the 530 and improve the vertical incidence ( 540.
The light emitting device module 520 may include a light emitting device array including a PCB substrate 522 such that a plurality of light emitting device packages 524 and a plurality of light emitting device packages 524 are mounted to form an array.
Meanwhile, the backlight unit 570 includes a diffusion film 566 for diffusing light incident from the light guide plate 530 toward the liquid crystal display panel 510, and a prism film 550 for condensing the diffused light to improve vertical incidence. ), And may include a protective film 564 to protect the prism film 550.
8 is an exploded perspective view showing a second embodiment of a liquid crystal display including the light emitting device according to the embodiment.
However, FIG. 8 will not be described in detail repeatedly with reference to FIG. 7.
8 is a direct view, the liquid crystal display device 600 may include a liquid crystal display panel 610 and a backlight unit 670 for providing light to the liquid crystal display panel 610.
Since the liquid crystal display panel 610 is the same as that described with reference to FIG. 7, a detailed description thereof will be omitted.
The backlight unit 670 may include a plurality of light emitting device modules 623, a reflective sheet 624, a lower chassis 630 in which the light emitting device modules 623 and the reflective sheet 624 are accommodated, and an upper portion of the light emitting device module 623. It may include a diffusion plate 640 and a plurality of optical film 660 disposed in the.
LED Module 623 A plurality of light emitting device packages 622 and a plurality of light emitting device packages 622 may be mounted to include a PCB substrate 621 to form an array.
In particular, in the light emitting device package 622, roughness 170 is formed in a region where wires are bonded by the
The reflective sheet 624 reflects the light generated from the light emitting device package 622 in the direction in which the liquid crystal display panel 610 is positioned to improve light utilization efficiency.
On the other hand, the light generated from the light emitting device module 623 is incident on the diffusion plate 640, the optical film 660 is disposed on the diffusion plate 640. The optical film 660 includes a diffusion film 666, a prism film 650, and a protective film 664.
Here, the
Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.
In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
100: light emitting element 110: support member
120: first semiconductor structure 130: second semiconductor structure
150: polarized reflection layer 300: light emitting device package
Claims (14)
A first electrode electrically connected to the first and fourth semiconductor layers;
A second electrode electrically connected to the second and third semiconductor layers; And
And a polarized reflection layer disposed between the first and second semiconductor structures and transmitting the light incident from one of the first and second active layers, and reflecting and refracting the light incident from the other.
A light emitting device comprising at least one stacked pair comprising a first layer and a second layer having a higher refractive index than the first layer.
The quantum well of the first active layer,
Has a higher energy band gap than the quantum well of the second active layer,
The second layer,
A light emitting device disposed adjacent to the first active layer.
The first layer is,
AlGaN,
The second layer,
At least one of GaN and AlN.
The polarized reflection layer,
A third layer on the second layer;
The third layer,
A light emitting device comprising an insulating material and having a predetermined pattern.
Is equal to the width of the second active layer,
Or a light emitting device wider than the width of the second active layer.
Is equal to the width of the first active layer,
Or a light emitting device narrower than the width of the first active layer.
The first and second active layers,
A light emitting device comprising at least one of Al and In.
The first active layer,
The concentration of Al is higher than that of the second active layer,
Or a light emitting device having a lower In concentration than the second active layer.
And a support member for supporting the first semiconductor structure.
Light emitting device made of a light-transmissive material.
Light emitting device consisting of a multilayer structure.
And an insulating layer disposed on at least one side of the first and second semiconductor structures.
Wherein the second electrode comprises:
A light emitting device disposed on a side of the insulating layer and electrically connected to the first and fourth semiconductor layers.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020110129199A KR20130062769A (en) | 2011-12-05 | 2011-12-05 | Light emitting device |
Applications Claiming Priority (1)
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KR1020110129199A KR20130062769A (en) | 2011-12-05 | 2011-12-05 | Light emitting device |
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KR20130062769A true KR20130062769A (en) | 2013-06-13 |
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KR1020110129199A KR20130062769A (en) | 2011-12-05 | 2011-12-05 | Light emitting device |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180126796A (en) * | 2017-05-18 | 2018-11-28 | 한국과학기술연구원 | Method for manufacturing color light-emitting diode using wafer bonding and vertically deposited color light-emitting diode |
-
2011
- 2011-12-05 KR KR1020110129199A patent/KR20130062769A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180126796A (en) * | 2017-05-18 | 2018-11-28 | 한국과학기술연구원 | Method for manufacturing color light-emitting diode using wafer bonding and vertically deposited color light-emitting diode |
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