KR101843731B1 - Light emitting device - Google Patents

Abstract

A light emitting device according to an embodiment includes a support substrate, a first electrode layer formed on the support substrate, and a second electrode layer formed on the first electrode layer, the first semiconductor layer, the second semiconductor layer, A light emitting structure including an active layer to be disposed, a light transmitting electrode layer formed on the light emitting structure, a third semiconductor layer formed on the light transmitting electrode layer, and a light extracting structure formed on the third semiconductor layer.

Description

[0001]

An embodiment relates to a light emitting element.

LED (Light Emitting Diode) is a device that converts electrical signals into infrared, visible light or light using the characteristics of compound semiconductors. It is used in household appliances, remote controls, display boards, The use area of LED is becoming wider.

In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.

As the use area of the LED is widened as described above, it is important to increase the luminance of the LED as the brightness required for a lamp used in daily life and a lamp for a structural signal is increased.

The light emitted from the active layer is concentrated on the upper portion of the vertical light emitting device, and thus the light distribution pattern is hardly formed. In addition, total reflection may occur at the interface between the upper GaN layer and the air, and the light extraction efficiency may be lowered.

Open No. 10-2005-0123028 discloses a vertical type light emitting device including a roughness in which a light extracting structure is formed on a light emitting structure to improve light extraction efficiency.

In addition, Publication No. 10-2008-0043649 discloses a light emitting device in which an n-GaN layer on a light emitting structure is formed to have a predetermined thickness to improve light emitting efficiency.

If the semiconductor layer included in the light emitting device is formed thick to form the light distribution pattern as described above, uneven growth and cracking may occur at the growth stage of the semiconductor layer, and reliability may be lowered.

In addition, when a predetermined light-transmitting structure is formed on the light emitting device to form a wide light distribution pattern, it is difficult to form the light extracting structure as described above, so that the light extracting efficiency may be lowered.

The embodiment provides a light emitting device having a wide light distribution pattern and improved light extraction efficiency.

A light emitting device according to an embodiment includes a support substrate, a first electrode layer formed on the support substrate, and a second electrode layer formed on the first electrode layer, the first semiconductor layer, the second semiconductor layer, A light emitting structure including an active layer to be disposed, a light transmitting electrode layer formed on the light emitting structure, a third semiconductor layer formed on the light transmitting electrode layer, and a light extracting structure formed on the third semiconductor layer.

The light emitting device according to the embodiment includes a light transmitting electrode layer having a predetermined thickness to form a light distribution pattern and a third semiconductor layer is formed on the light transmitting electrode layer to easily form a light extracting structure, .

1 is a cross-sectional view of a light emitting device according to an embodiment,
2A is a cross-sectional view of a light emitting device according to an embodiment,
2B is a cross-sectional view of the light emitting device according to the embodiment,
3 is a perspective view of a light emitting device package including a light emitting device according to an embodiment,
4 is a cross-sectional view of a light emitting device package including a light emitting device according to an embodiment,
5 is a sectional view of a light emitting device package including a light emitting device according to an embodiment,
6 is a perspective view showing a lighting device including a light emitting device according to an embodiment,
FIG. 7 is a cross-sectional view taken along the line C-C 'of the illumination device of FIG. 6,
8 is an exploded perspective view of a liquid crystal display device including a light emitting device according to an embodiment, and
9 is an exploded perspective view of a liquid crystal display device including a light emitting device according to an embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Thus, in some embodiments, well known process steps, well known device structures, and well-known techniques are not specifically described to avoid an undesirable interpretation of the present invention. Like reference numerals refer to like elements throughout the specification.

In the description of the embodiment according to the present invention, in the case of being described as being formed "on or under" of each element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.

Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.

Although the terms first, second, etc. may be used to describe various elements, components, regions, layers and / or regions, these elements. Ingredients. Areas. Layers and / or regions should not be limited by these terms.

Further, the angle and direction mentioned in the description of the structure of the light emitting device in the embodiment are based on those shown in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

1 and 2, a light emitting device 100 according to an embodiment includes a support substrate 110, a first electrode 120 formed on the support substrate 110, a first electrode 120 formed on the first electrode 120, A light emitting structure 130 including a first semiconductor layer 132, a second semiconductor layer 136, and an active layer 134 disposed between the first semiconductor layer 132 and the second semiconductor layer 136; A light-transmitting electrode layer 140 formed on the light-emitting structure 130, a third semiconductor layer 150 formed on the light-transmitting electrode layer 140, and a light extracting structure 160 formed on the third semiconductor layer.

The support substrate 110 may be formed using a material having a high thermal conductivity, or may be formed of a conductive material, such as a metal material or a conductive ceramic. The support substrate 110 may be formed of a single layer, and may be formed of a double structure or a multiple structure.

That is, the support substrate 110 may be formed of a metal such as Au, Ni, W, Mo, Cu, Al, Ta, (Ag), platinum (Pt), and chromium (Cr), or may be formed of two or more alloys, or two or more different materials may be laminated. The support substrate 110 may also be formed of one or more materials selected from the group consisting of silicon (Si), germanium (Ge), gallium arsenide (GaAs), zinc oxide (ZnO), silicon carbide (SiC), silicon germanium (SiGe), gallium nitride ⅲ) it can be implemented with a carrier wafer such as oxide (Ga ₂ O _3).

The support substrate 110 facilitates the emission of heat generated in the light emitting device 100, thereby improving the thermal stability of the light emitting device 100.

A diffusion barrier layer 114 may be formed on the support substrate 100. The diffusion barrier layer 114 may be formed of a material that prevents diffusion of metals and may be formed of a metal such as platinum (Pt), palladium (Pd), tungsten (W), nickel (Ni), ruthenium (Ru), molybdenum At least one of iridium (Ir), rhodium (Rh), tantalum (Ta), hafnium (Hf), zirconium (Zr), niobium (Nb), vanadium (V), iron (Fe) Or may include, but is not limited to, two or more alloys.

The diffusion preventing layer 114 can minimize mechanical damage such as cracking or peeling that may occur in the manufacturing process of the light emitting device 100. The diffusion preventing layer 114 may prevent diffusion of the metal material constituting the supporting substrate 110 or the coupling layer 112 into the light emitting structure 130.

The diffusion barrier layer 114 may be formed using a sputter deposition method. When a sputter deposition method is used, ions of the source material are sputtered and deposited when the ionized atoms are accelerated by an electric field to impinge on the source material of the conductive layer 120. In addition, an electrochemical metal deposition method, a bonding method using a eutectic metal, or the like may be used according to the embodiment. The diffusion preventing layer 114 may be formed of a plurality of layers according to an embodiment.

A bonding layer 112 may be formed between the supporting substrate 110 and the diffusion preventing layer 114 for bonding the supporting substrate 110 and the diffusion preventing layer 114 to each other. The bonding layer 112 may be formed of, for example, Au, Sn, In, Ag, Ni, Nb, Au, Pd, , And copper (Cu).

A first electrode 120 may be formed on the diffusion barrier layer 114. The first electrode 120 may include an ohmic layer (not shown), a reflective layer (not shown), a bonding layer and a bonding layer (not shown). For example, the first electrode 120 may be a structure of an ohmic layer / a reflection layer / a bonding layer, a laminate structure of an ohmic layer / a reflection layer, or a structure of a reflection layer (including an ohmic layer) / a bonding layer. For example, the first electrode 120 may be formed by sequentially stacking a reflective layer and an ohmic layer on a bonding layer.

The reflective layer (not shown) may be disposed between an ohmic layer (not shown) and a conductive layer (not shown), and may be formed of a material having excellent reflective properties, such as silver (Ag), nickel (Ni) (Rh), Pd, Ir, ruthenium, magnesium, zinc, platinum, gold, hafnium and combinations thereof. Or a transparent conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, or the like. Further, the reflective layer (not shown) can be laminated with IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni and the like. In addition, when a reflective layer (not shown) is formed of a material that is in ohmic contact with the light emitting structure 130 (for example, the first semiconductor layer 132), an ohmic layer (not shown) may not be formed separately, Do not.

The ohmic layer (not shown) is in ohmic contact with the lower surface of the light emitting structure 130, and may be formed of a layer or a plurality of patterns. The ohmic layer (not shown) may be formed of a transparent electrode layer and a metal. For example, ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide) ), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrO _x , RuO _x , RuO _x / Ni, Ag, Ni / IrO _x / Au, and Ni / IrO _x / Au / ITO. The ohmic layer (not shown) is provided for facilitating the injection of carriers into the first semiconductor layer 132, and is not necessarily formed.

The first electrode 120 may also include a bonding layer (not shown), wherein the bonding layer (not shown) may include a barrier metal or a bonding metal such as titanium (Ti), gold At least one of Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag or Ta, But is not limited thereto.

Meanwhile, a current blocking layer (CBL) 122 may be formed between the first electrode 120 and the light emitting structure 130 described later.

The current confining layer 122 is made of a material having electric insulation property, a material having a lower electrical conductivity than the first electrode 120 or the bonding layer 112, and a material having at least a material having a Schottky contact with the first semiconductor layer 132 And may include at least one of SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO _x , and TiO ₂ , for example.

The current confining layer 122 is formed between the first electrode 120 and the light emitting structure 130, thereby preventing the current crowding phenomenon. Meanwhile, the current confining layer 122 may be formed to overlap at least one region in the vertical direction with respect to the second electrode 170, which may be formed on the third semiconductor layer 160, but is not limited thereto.

The current confining layer 122 is formed along the bottom edge of the first semiconductor layer 132 and may be formed in a ring shape, a loop shape, or a frame shape. Current confined layer 122 is an ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, SiO 2, SiO x, SiO x N y, Si 3 N 4, at least one of Al ₂ O _3, TiO ₂ . The inner portion of the current confining layer 122 is disposed below the first semiconductor layer 132 and the outer portion is disposed further outward than the side surface of the light emitting structure 130. [

Since the current confining layer 122 is formed along the bottom edge of the first semiconductor layer 132, it is possible to prevent the first electrode 120 from being visualized during the scribing process of the light emitting structure 130, ) Can be prevented from being short-circuited. The light emitting structure 130 may be formed on the first electrode 120. The light emitting structure 130 may include at least a first semiconductor layer 132, an active layer 134 and a second semiconductor layer 136 and may be formed between the first semiconductor layer 132 and the second semiconductor layer 136 And an active layer 134 interposed therebetween.

The first semiconductor layer 132 may be implemented as a p-type semiconductor layer to inject holes into the active layer 134. The first semiconductor layer 132 may be a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0 = x = 1, 0 = y = 1, 0 = x + y = 1) For example, gallium nitride (GaN), aluminum nitride (AlN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), indium nitride (InN), InAlGaN, AlInN, A p-type dopant such as zinc (Zn), calcium (Ca), strontium (Sr), barium (Ba) or the like can be doped.

The active layer 134 may be formed on the first semiconductor layer 132. The active layer 134 may be formed of a single or multiple quantum well structure, a quantum-wire structure, a quantum dot structure, or the like using a compound semiconductor material of Group 3-V group elements.

Well active layer 134 has a composition formula in this case formed of a quantum well structure, for _{example, In x Al y Ga 1 -x-} y N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) gateul a single or multiple quantum well structure having a barrier layer having a compositional formula of layers and _{in a Al b Ga 1 -a- b} N (0≤a≤1, 0 ≤b≤1, 0≤a + b≤1) . The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

A conductive clad layer (not shown) may be formed on and / or below the active layer 134. The conductive clad layer (not shown) may be formed of an AlGaN-based semiconductor and may have a band gap larger than that of the active layer 134.

An intermediate layer (not shown) may be formed between the active layer 134 and the first semiconductor layer 132 and an intermediate layer (not shown) may be formed from the second semiconductor layer 136 to the active layer 134 An electron blocking layer may be used to prevent injected electrons from being recombined in the active layer 134 and flowing to the first semiconductor layer 132. The intermediate layer (not shown) may have a bandgap larger than the bandgap of the barrier layer included in the active layer 134, and may be formed of a semiconductor layer containing Al, such as p-type AlGaN, but is not limited thereto. Electrons injected from the second semiconductor layer 136 are injected into the first semiconductor layer 132 without being recombined in the active layer 134 because the middle layer has a relatively larger band gap than the active layer 134 The phenomenon can be prevented. Accordingly, the probability of recombination of electrons and holes in the active layer 134 can be increased and a leakage current can be prevented.

The second semiconductor layer 136 may be located on the active layer 134. The second semiconductor layer 136 may be formed of an n-type semiconductor layer and may provide electrons to the active layer 134. The second semiconductor layer 136 may be a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + For example, gallium nitride (GaN), aluminum nitride (AlN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), indium nitride (InN), InAlGaN and AlInN. Type dopants such as silicon (Si), germanium (Ge), tin (Sn), selenium (Se), and tellurium (Te).

A transparent electrode layer 140 having a predetermined thickness may be disposed on the second semiconductor layer 136.

The light transmitting electrode layer 140 is formed of a material having electric conductivity and light transmission property and may include In or Zn and may be made of ITO, IZO (In-ZnO), GZO (Ga-ZnO), AZO ), At least one of AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), IrO _x , RuO _x , RuO _x / ITO, Ni / IrO _x / Au, and Ni / IrO _x / Au / ITO .

Since the light transmitting electrode layer 140 having a predetermined thickness is formed on the second semiconductor layer 136, the light generated from the active layer 134 can proceed in the lateral direction without progressing in the upward direction, Can be widened. Accordingly, the light emission directing angle of the light emitting device 100 can be widened and the light emitting efficiency of the light emitting device 100 can be improved.

If the light emitting structure 130 is formed thick to broadly form the light distribution pattern, the growth of the light emitting structure 130 may be difficult and the possibility of cracking of the light emitting structure 130 may be increased. Reliability may be deteriorated. Therefore, when the light transmitting electrode layer 140 is formed thick to broadly form the light distribution pattern, the light emitting structure 130 can be easily grown and the reliability of the light emitting device 100 is improved compared with the case where the light emitting structure 130 is thickly formed. Can be improved.

The crystal structure of the translucent electrode layer 140 is similar to the crystal structure of the second semiconductor layer 136 and the third semiconductor layer 150 to be described later to form the translucent electrode layer 140 and the second semiconductor layer 136, The total reflection at the interface between the third semiconductor layer 150 and the third semiconductor layer 150 is hardly generated, so that the light distribution pattern can be formed wider without lowering the luminous efficiency of the light emitting device 100.

The transmissive electrode layer 140 may contribute to the current spreading effect that uniformly spreads the current supplied from the second electrode 170. Accordingly, the current is uniformly supplied to the active layer 134, Can be improved.

The light-transmitting electrode layer 140 is formed between the second semiconductor layer 136 and the third semiconductor layer 150 to form a light extraction structure 160 on the third semiconductor layer 150, It is possible to prevent the active layer 134 from being damaged due to a deep etched depth formed in the process, thereby improving the reliability of the light emitting device 100.

The light transmitting electrode layer 140 may be doped with a predetermined dopant and may be a p-type dopant such as magnesium (Mg), zinc (Zn), calcium (Ca), strontium (Sr), barium Type dopants such as silicon (Si), germanium (Ge), tin (Sn), selenium (Se), and tellurium (Te). By doping the light-transmitting electrode layer 140 with a predetermined dopant, the efficiency of the light-transmitting electrode layer 140 can be improved.

On the other hand, when the light transmitting electrode layer 140 is formed to be too thin, ohmic contact formation may be difficult, and when the light transmitting electrode layer 140 is formed too thick, the light distribution pattern expansion effect may not be increased. 500um.

The third semiconductor layer 150 may be formed on the transparent electrode layer 140.

The third semiconductor layer 150 are first and second semiconductor layers (132, 136) and may be formed of the same material, such as _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤ (GaN), AlN (Aluminum nitride), AlGaN (Aluminum gallium nitride), InGaN (Indium gallium nitride), InN Indium nitride, InAlGaN, AlInN, and the like.

The third semiconductor layer 150 includes the above-described material, so that the light extracting structure 160 described later can be formed more easily than the light transmitting electrode layer 140. The third semiconductor layer 150 is formed on the light transmitting electrode layer 140 and the third semiconductor layer 150 includes a material that is easier to form the light extracting structure 160 than the light transmitting electrode layer 140, The light distribution pattern expansion effect by the formation of the electrode layer 140 and the light extraction effect by the light extraction structure 160 can be achieved at the same time.

Meanwhile, the third semiconductor layer 150 may have a thickness of not less than 500 nm for forming the light extracting structure 160, and not more than 10 um for ease of processing, but is not limited thereto.

The third semiconductor layer 150 may be doped with a predetermined dopant and may include a p-type dopant such as magnesium (Mg), zinc (Zn), calcium (Ca), strontium (Sr) Or doped with an n-type dopant such as silicon (Si), germanium (Ge), tin (Sn), selenium (Se) or tellurium (Te).

When the third semiconductor layer 150 includes GaN, the upper surface of the third semiconductor layer 150 may be N-face, and when the upper surface of the third semiconductor layer 150 is formed of N-face The formation of the light extracting structure 160 can be made easier.

The first semiconductor layer 132, the active layer 134, the intermediate layer (not shown), the second semiconductor layer 136, the light-transmitting electrode layer 140, and the third semiconductor layer 150 may be formed of, for example, (MOCVD), Chemical Vapor Deposition (CVD), Plasma-Enhanced Chemical Vapor Deposition (PECVD), Molecular Beam Epitaxy (MBE), Hydride Vapor Deposition (HVPE), sputtering, E-beam, or the like. However, the present invention is not limited thereto.

Further, the doping concentrations of the conductive dopants in the first to third semiconductor layers 132, 136, and 150 and the light-transmitting electrode layer 140 can be uniform or non-uniform. That is, the first to third semiconductor layers 132, 136, and 150 and the light-transmitting electrode layer 140 may be formed to have various doping concentration distributions, but the present invention is not limited thereto.

The first semiconductor layer 132 may be an n-type semiconductor layer and the second semiconductor layer 136 may be a p-type semiconductor layer. The light-transmitting electrode layer 140 and the third semiconductor layer 180 may also be formed of and may be doped with an n-type or p-type dopant. Accordingly, the light emitting device 100 may have any bonding structure such as npnp, nppn, and pnpn junction structures.

The light extracting structure 160 and the second electrode 170 may be formed on the third semiconductor layer 150.

The light extracting structure 160 may be formed on a part or all of the upper surface of the third semiconductor layer 150. The light extracting structure 160 may be formed by performing etching on at least one region of the upper surface of the third semiconductor layer 150 and is not limited thereto. The etch process may include a wet etch process and / or a dry etch process. As the etch process is performed, the upper surface of the third semiconductor layer 150 may include recesses and protrusions forming the light extracting structure 160.

The concave and convex portions may be formed to have regular shapes and arrangements, and may be formed to have irregular shapes and arrangements, but the invention is not limited thereto. The concave-convex portion is a non-flat upper surface, and may include at least one of a texture pattern, a concavo-convex pattern, and an uneven pattern, in which a plurality of random irregularities are arranged or a predetermined pattern is formed, But not limited thereto.

The concave-convex portion may be formed to have various shapes such as a cylinder, a polygonal column, a cone, a polygonal pyramid, a truncated cone, a polygonal pyramid, and the like, preferably including a horn shape.

Meanwhile, the light extracting structure 160 may be formed by a photoelectrochemical (PEC) method or the like, but is not limited thereto. The light extracting structure 160 is formed on the upper surface of the third semiconductor layer 150 so that the light generated from the active layer 134 is totally reflected from the upper surface of the third semiconductor layer 150 to be resorbed or scattered The light extraction efficiency of the light emitting device 100 can be improved.

The second electrode 170 may include at least one pad or / and an electrode having a predetermined pattern. The second electrode 170 may be disposed in the center region, the outer region, or the edge region of the upper surface of the third semiconductor layer 150, but the present invention is not limited thereto. The second electrode 170 may be disposed in a region other than the upper portion of the third semiconductor layer 150, but the present invention is not limited thereto.

The second electrode 170 may be formed of a conductive material such as In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, W, , Mo, Nb, Al, Ni, Cu, and WTi.

Meanwhile, as described above, the second electrode 170 may be formed to overlap at least one region perpendicular to the current confining layer 122, but is not limited thereto.

2 is a cross-sectional view of a light emitting device according to an embodiment.

Referring to FIG. 2, the light emitting device according to the embodiment includes a support substrate 210, a first electrode 220 formed on the support substrate 210, a first electrode 220 formed on the first electrode 220, A light emitting structure 230 including a first semiconductor layer 232, a second semiconductor layer 236 and an active layer 234 disposed between the first semiconductor layer 232 and the second semiconductor layer 236; A light extracting structure 260 formed on the third semiconductor layer 250 and a light extracting structure 260 formed on one surface of the light transmitting electrode layer 240. The light extracting structure 260 is formed on the light transmitting electrode layer 240, And a second electrode 270 formed on the second electrode 270.

The description of the supporting substrate 210, the first electrode 220, the light emitting structure 230, the light transmitting electrode layer 240, the third semiconductor layer 250, and the light extracting structure 260 is as described above, do.

The second electrode 270 may be formed on one side of the light-transmitting electrode layer 240.

For example, as shown in FIG. 2A, the second electrode 270 may be formed on a side surface of the light-transmitting electrode layer 240. The second electrode 270 may extend to the upper surface of the light-transmitting electrode layer 240 or one region of the second semiconductor layer 236 as well as the side surface of the light-transmitting electrode layer 240, but is not limited thereto.

2B, the light transmitting electrode layer 240 may include a protrusion 242 protruding laterally from the light emitting structure 230, and the second electrode 270 may include protrusions 242, As shown in FIG.

For example, as shown in FIG. 2B, the second electrode 270 may be formed on the exposed side surfaces and the bottom surface of the protrusion 242.

In addition, the third semiconductor layer 250 may be formed to extend laterally so as to overlap at least one region with the protruding portion 242.

The second electrode 270 is formed on the side surface or the bottom surface of the light transmitting electrode layer 240 so that the second electrode 270 and the active layer 234 are not vertically overlapped with each other and do not block the light emitting region of the active layer 234, The light generated in the second electrode 270 can be prevented from being absorbed and reflected by the second electrode 270.

In addition, the light-transmitting electrode layer 240 is formed to extend laterally, including the protruding portion 242, and the third semiconductor layer 250 is formed so as to extend in the lateral direction. Thus, light generated in the active layer 234 can be diffused in the lateral direction So that the light distribution pattern of the light emitting device 200 can be further expanded.

3 to 5 are a perspective view and a cross-sectional view illustrating a light emitting device package according to an embodiment.

3 to 5, the light emitting device package 300 includes a body 310 having a cavity 320 formed therein, first and second lead frames 340 and 350 mounted on the body 310, A light emitting device 330 electrically connected to the first and second lead frames 340 and 350 and an encapsulant (not shown) encapsulated in the cavity 320 to cover the light emitting device 330.

The body 310 may be made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), photo sensitive glass (PSG), polyamide 9T (SPS), a metal material, sapphire (Al ₂ O ₃ ), beryllium oxide (BeO), and a printed circuit board (PCB). The body 310 may be formed by injection molding, etching, or the like, but is not limited thereto.

The inner surface of the body 310 may be formed with an inclined surface. The reflection angle of the light emitted from the light emitting device 330 can be changed according to the angle of the inclined surface, thereby controlling the directivity angle of the light emitted to the outside.

Concentration of the light emitted to the outside from the light emitting device 330 increases as the directivity angle of the light decreases. Conversely, as the directivity angle of the light increases, the concentration of light emitted from the light emitting device 330 decreases.

The shape of the cavity 320 formed in the body 310 may be circular, square, polygonal, elliptical, or the like, and may have a curved shape, but the present invention is not limited thereto.

The light emitting device 330 is mounted on the first lead frame 340 and may be a light emitting device that emits light such as red, green, blue, or white, or a UV (Ultra Violet) However, the present invention is not limited thereto. In addition, one or more light emitting elements 330 may be mounted.

The light emitting device 330 may be a horizontal type or a vertical type formed on an upper surface or a flip chip formed on an upper surface or a lower surface, Applicable.

The encapsulant (not shown) may be filled in the cavity 320 to cover the light emitting device 330.

The encapsulant (not shown) may be formed of silicon, epoxy, or other resin material. The encapsulant may be filled in the cavity 320 and then UV or heat cured.

In addition, the encapsulant (not shown) may include a phosphor, and the phosphor may be selected to be a wavelength of light emitted from the light emitting device 330 so that the light emitting device package 300 may emit white light.

The phosphor may be one of a blue light emitting phosphor, a blue light emitting phosphor, a green light emitting phosphor, a yellow light emitting phosphor, a yellow light emitting phosphor, a yellow red light emitting phosphor, an orange light emitting phosphor, and a red light emitting phosphor depending on the wavelength of light emitted from the light emitting device 330 Can be applied.

That is, the phosphor may be excited by the light having the first light emitted from the light emitting device 330 to generate the second light. For example, when the light emitting element 330 is a blue light emitting diode and the phosphor is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, and blue light and blue light emitted from the blue light emitting diode As the excited yellow light is excited, the light emitting device package 300 can provide white light.

Similarly, when the light emitting element 330 is a green light emitting diode, a magenta phosphor or a blue and red phosphor are mixed, and when the light emitting element 330 is a red light emitting diode, a cyan phosphor or a mixture of blue and green phosphors For example.

Such a fluorescent material may be a known fluorescent material such as a YAG, TAG, sulfide, silicate, aluminate, nitride, carbide, nitridosilicate, borate, fluoride or phosphate.

The first and second lead frames 340 and 350 may be formed of a metal material such as titanium, copper, nickel, gold, chromium, tantalum, (Pt), tin (Sn), silver (Ag), phosphorus (P), aluminum (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium , Hafnium (Hf), ruthenium (Ru), and iron (Fe). In addition, the first and second lead frames 340 and 350 may be formed to have a single layer or a multilayer structure, but the present invention is not limited thereto.

The first and second lead frames 340 and 350 are separated from each other and electrically separated from each other. The light emitting device 330 is mounted on the first and second lead frames 340 and 350 and the first and second lead frames 340 and 350 are in direct contact with the light emitting device 330, And may be electrically connected through a conductive material such as a conductive material. In addition, the light emitting device 330 may be electrically connected to the first and second lead frames 340 and 350 through wire bonding, but is not limited thereto. Accordingly, when power is supplied to the first and second lead frames 340 and 350, power may be applied to the light emitting device 330. Meanwhile, a plurality of lead frames (not shown) may be mounted in the body 310 and each lead frame (not shown) may be electrically connected to the light emitting device 330, but is not limited thereto.

10, the light emitting device package 300 according to the embodiment may include an optical sheet 380, and the optical sheet 380 may include a base portion 382 and a prism pattern 384 .

The base portion 382 is made of a transparent material having excellent thermal stability as a support for forming the prism pattern 384 and is made of, for example, polyethylene terephthalate, polycarbonate, polypropylene, polyethylene, polystyrene, But the present invention is not limited thereto.

Further, the base portion 382 may include a phosphor (not shown). For example, the base portion 382 can be formed by curing the phosphors (not shown) evenly dispersed in the material forming the base portion 382. When the base portion 382 is formed as described above, the phosphor (not shown) can be uniformly distributed throughout the base portion 382.

On the other hand, a three-dimensional prism pattern 384 for refracting light and condensing light can be formed on the base portion 382. The material constituting the prism pattern 384 may be acrylic resin, but is not limited thereto.

The prism patterns 384 include a plurality of linear prisms arranged in parallel with one another along one direction on one side of the base portion 382 and the vertical section with respect to the axial direction of the linear prism may be triangular.

When the optical sheet 380 is attached to the light emitting device package 300 of FIG. 6C, the straightness of light is improved and the luminance of light of the light emitting device package 300 is increased Can be improved.

On the other hand, the prism pattern 384 may include a phosphor (not shown).

The fluorescent material (not shown) is dispersed in the prism pattern 384 to form a prism pattern 384 by mixing it with, for example, acrylic resin to form a paste or a slurry state, .

When a phosphor (not shown) is included in the prism pattern 384, the uniformity and distribution of light of the light emitting device package 300 is improved, and a phosphor (not shown) is used in addition to the light focusing effect by the prism pattern 384. [ The directivity angle of the light emitting device package 300 can be improved.

A light guide plate, a prism sheet, a diffusion sheet, and the like, which are optical members, may be disposed on a light path of the light emitting device package 300. Such a light emitting device package, a substrate, and an optical member can function as a light unit. Still another embodiment may be implemented as a display device, an indicating device, and a lighting system including the light emitting device or the light emitting device package described in the above embodiments. For example, the lighting system may include a lamp and a streetlight.

FIG. 6 is a perspective view illustrating a lighting device including a light emitting device package according to an embodiment, and FIG. 7 is a cross-sectional view taken along the line C-C 'of the lighting device of FIG.

6 and 7, the lighting apparatus 400 may include a body 410, a cover 430 coupled to the body 410, and a finishing cap 450 positioned at opposite ends of the body 410 have.

The light emitting device module 440 is coupled to a lower surface of the body 410. The body 410 is electrically conductive so that heat generated from the light emitting device package 444 can be emitted to the outside through the upper surface of the body 410. [ And a metal material having an excellent heat dissipation effect.

The light emitting device package 444 may be mounted on the PCB 442 in a multi-color, multi-row manner to form an array. The light emitting device package 444 may be mounted at equal intervals or may be mounted with various distances as required. As the PCB 442, MPPCB (Metal Core PCB) or FR4 material PCB can be used.

The cover 430 may be formed in a circular shape so as to surround the lower surface of the body 410, but is not limited thereto.

The cover 430 protects the internal light emitting device module 440 from foreign substances or the like. The cover 430 may include diffusion particles to prevent glare of light generated in the light emitting device package 444 and uniformly emit light to the outside and may include at least one of an inner surface and an outer surface of the cover 430 A prism pattern or the like may be formed on one side. Further, the phosphor may be coated on at least one of the inner surface and the outer surface of the cover 430.

Since the light generated in the light emitting device package 444 is emitted to the outside through the cover 430, the cover 430 should have a high light transmittance and sufficient heat resistance to withstand the heat generated in the light emitting device package 444 The cover 430 is preferably made of a material including polyethylene terephthalate (PET), polycarbonate (PC), or polymethyl methacrylate (PMMA) .

The finishing cap 450 is located at both ends of the body 410 and can be used for sealing the power supply unit (not shown). In addition, the fin 450 is formed on the finishing cap 450, so that the lighting device 400 according to the embodiment can be used immediately without a separate device on the terminal from which the conventional fluorescent lamp is removed.

8 is an exploded perspective view of a liquid crystal display device including a light emitting device according to an embodiment.

8, the liquid crystal display device 500 may include a backlight unit 570 for providing light to the liquid crystal display panel 510 and the liquid crystal display panel 510 in an edge-light manner.

The liquid crystal display panel 510 can display an image using the light provided from the backlight unit 570. The liquid crystal display panel 510 may include a color filter substrate 512 and a thin film transistor substrate 514 facing each other with a liquid crystal therebetween.

The color filter substrate 512 can realize the color of an image to be displayed through the liquid crystal display panel 510.

The thin film transistor substrate 514 is electrically connected to a printed circuit board 518 on which a plurality of circuit components are mounted via a driving film 517. The thin film transistor substrate 514 may apply a driving voltage provided from the printed circuit board 518 to the liquid crystal in response to a driving signal provided from the printed circuit board 518. [

The thin film transistor substrate 514 may include a thin film transistor and a pixel electrode formed as a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 570 includes a light emitting device module 520 that outputs light, a light guide plate 530 that changes the light provided from the light emitting device module 520 into a surface light source and provides the light to the liquid crystal display panel 510, A plurality of films 550, 566, and 564 that uniformly distribute the luminance of light provided from the light guide plate 530 and improve vertical incidence, and a reflective sheet (not shown) that reflects light emitted to the rear of the light guide plate 530 to the light guide plate 530 540).

The light emitting device module 520 may include a PCB substrate 522 for mounting a plurality of light emitting device packages 524 and a plurality of light emitting device packages 524 to form an array.

The backlight unit 570 includes a diffusion film 566 for diffusing light incident from the light guide plate 530 toward the liquid crystal display panel 510 and a prism film 550 for enhancing vertical incidence by condensing the diffused light And may include a protective film 564 for protecting the prism film 550. [

9 is an exploded perspective view of a liquid crystal display device including a light emitting device according to an embodiment. However, the parts shown and described in Fig. 8 are not repeatedly described in detail.

9, the liquid crystal display 600 may include a liquid crystal display panel 610 and a backlight unit 670 for providing light to the liquid crystal display panel 610 in a direct-down manner.

The liquid crystal display panel 610 is the same as that described with reference to FIG. 8, and thus a detailed description thereof will be omitted.

The backlight unit 670 includes a plurality of light emitting element modules 623, a reflective sheet 624, a lower chassis 630 in which the light emitting element module 623 and the reflective sheet 624 are accommodated, And a plurality of optical films 660 disposed on the diffuser plate 640.

The light emitting device module 623 may include a PCB substrate 621 for mounting a plurality of light emitting device packages 622 and a plurality of light emitting device packages 622 to form an array.

The reflective sheet 624 reflects light generated from the light emitting device package 622 in a direction in which the liquid crystal display panel 610 is positioned, thereby improving light utilization efficiency.

The light emitted from the light emitting element module 623 is incident on the diffusion plate 640 and the optical film 660 is disposed on the diffusion plate 640. The optical film 660 may be configured to include a diffusion film 666, a prism film 650, and a protective film 664.

Meanwhile, the light emitting device according to the embodiment is not limited to the configuration and method of the embodiments described above, but the embodiments may be modified so that all or some of the embodiments may be selectively And may be configured in combination.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, It will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the present invention.

100: light emitting element 110: support substrate
120: first electrode 130: light emitting structure
132: first semiconductor layer 134: active layer
136: second semiconductor layer 140: translucent electrode layer
150: third semiconductor layer 160: light extracting structure
170: second electrode

Claims (17)

A support substrate;
A first electrode layer formed on the supporting substrate;
A light emitting structure formed on the first electrode layer and including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer;
A light transmitting electrode layer formed on the light emitting structure and having a predetermined thickness;
A third semiconductor layer formed on the light-transmitting electrode layer; And
And a light extraction structure formed on the third semiconductor layer,
Wherein the light-transmitting electrode layer is doped with an n-type or p-type dopant. The method according to claim 1,
The light-
(In-Zn ZnO), IGZO (In-Ga ZnO), IrO _x , RuO _x , RuO _x , RuO _x , _x / ITO, Ni / IrO _x / Au, and Ni / IrO _x / Au / ITO,
The light-
Lt; RTI ID = 0.0 > um < / RTI > delete delete The method according to claim 1,
The light-
(Mg), zinc (Zn), calcium (Ca), strontium (Sr), barium (Ba), silicon (Si), germanium (Ge), tin (Sn), selenium (Se) ≪ / RTI > is doped with either one of the dopants. The method according to claim 1,
Wherein the third semiconductor layer comprises:
Wherein the second semiconductor layer is formed of the same material as at least one of the first semiconductor layer and the second semiconductor layer,
Wherein the third semiconductor layer comprises:
Wherein at least one of GaN (Gallium nitride), AlN (Aluminum nitride), AlGaN (Indium Gallium nitride), InGaN (Indium gallium nitride), InN (Indium nitride), InAlGaN, and AlInN is contained. delete The method according to claim 1,
Wherein the third semiconductor layer comprises:
And a thickness of 500 nm to 10 [mu] m. The method according to claim 1,
Wherein the third semiconductor layer comprises:
doped with an n-type or p-type dopant,
Wherein the third semiconductor layer comprises:
(Mg), zinc (Zn), calcium (Ca), strontium (Sr), barium (Ba), silicon (Si), germanium (Ge), tin (Sn), selenium (Se) ≪ / RTI > is doped with either one of the dopants. delete The method according to claim 1,
Wherein the third semiconductor layer comprises:
And an upper surface thereof is an N-face. The method according to claim 1,
The light extracting structure includes:
A light emitting device comprising a concavo-convex portion having a predetermined roughness. The method according to claim 1,
And a second electrode formed on at least one side of the third semiconductor layer or the light transmitting electrode layer. 14. The method of claim 13,
Wherein the second electrode comprises:
A transparent electrode layer formed on the side surface of the transparent electrode layer,
Wherein the light transmitting electrode layer includes a protruding portion protruding laterally of the light emitting structure. delete 15. The method of claim 14,
And the second electrode is formed on at least one surface of the protrusion. 15. The method of claim 14,
Wherein the third semiconductor layer comprises:
Wherein at least one region is formed to extend laterally so as to vertically overlap with the protrusion.

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