KR20140097900A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
KR20140097900A
KR20140097900A KR1020130010621A KR20130010621A KR20140097900A KR 20140097900 A KR20140097900 A KR 20140097900A KR 1020130010621 A KR1020130010621 A KR 1020130010621A KR 20130010621 A KR20130010621 A KR 20130010621A KR 20140097900 A KR20140097900 A KR 20140097900A
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South Korea
Prior art keywords
electrode layer
layer
light emitting
disposed
semiconductor layer
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KR1020130010621A
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Korean (ko)
Inventor
박범두
김태진
황선교
성영운
홍기용
김민석
이상준
이태용
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엘지이노텍 주식회사
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Priority to KR1020130010621A priority Critical patent/KR20140097900A/en
Priority to EP14153038.6A priority patent/EP2763195A3/en
Priority to CN201410043853.3A priority patent/CN103972348B/en
Priority to TW103103374A priority patent/TWI600183B/en
Priority to US14/167,833 priority patent/US9112114B2/en
Priority to JP2014015331A priority patent/JP6320769B2/en
Publication of KR20140097900A publication Critical patent/KR20140097900A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light emitting device according to an embodiment includes a conductive substrate; a first electrode layer arranged on the conductive substrate; a light emitting structure which includes a first semiconductor layer arranged on the first electrode layer, a second semiconductor layer, and an active layer located between the first semiconductor layer and the second semiconductor layer; and a metal electrode layer which includes a second electrode layer which is electrically connected to the second semiconductor layer. The first electrode layer is arranged on the conductive substrate; a transparent electrode layer arranged on the metal electrode layer; and a contact part which is extended from the metal electrode layer, penetrates the transparent electrode layer, and touches the light emitting structure. The contact parts are separated from each other and include at least one of Au and Be.

Description

[0001]

An embodiment relates to a light emitting element.

As a typical example of a light emitting device, a light emitting diode (LED) is a device for converting an electric signal into an infrared ray, a visible ray, or a light using the characteristics of a compound semiconductor, and is used for various devices such as household appliances, remote controllers, Automation equipment, and the like, and the use area of LEDs is gradually widening.

In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.

As the use area of the LED is widened as described above, it is important to increase the luminance of the LED as the brightness required for a lamp used in daily life and a lamp for a structural signal is increased.

In addition, the electrode of the light emitting device should have excellent adhesive force and excellent electrical characteristics.

Further, research is underway to increase the luminance of the light emitting element and to reduce the operating voltage.

Embodiments provide a light emitting device that lowers VF of a light emitting device and improves light emitting efficiency.

A light emitting device according to an embodiment includes a conductive substrate; A first electrode layer disposed on the conductive substrate; A light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, the active layer being disposed on the first electrode layer; And a second electrode layer electrically connected to the second semiconductor layer, wherein the first electrode layer comprises: a metal electrode layer disposed on the conductive substrate; A transparent electrode layer disposed on the metal electrode layer; And a contact portion extending from the metal electrode layer and penetrating the transparent electrode layer to contact the light emitting structure, wherein a plurality of the contact portions are disposed apart from each other and include AuBe.

The light emitting device according to the embodiment is advantageous in that ohmic contact with the light emitting structure is facilitated since the contact portion is disposed through the transparent electrode layer.

In addition, since the contact portion penetrates the transparent electrode layer, there is an advantage that the heat generated in the light emitting structure can be easily discharged to the conductive substrate.

Further, since the contact portion is in direct contact with the light emitting structure, there is an advantage that the VF (Voltage Forward) is reduced.

In addition, since the metal reflection layer can be omitted, there is an advantage that the manufacturing cost of the metal reflection layer is reduced.

In the embodiment, since the contact portions are disposed apart from each other, there is an advantage of preventing the light from being absorbed by the contact portion, and also forming an ohmic contact with the light emitting structure.

1 is a cross-sectional view illustrating a light emitting device according to an embodiment of the present invention,
Fig. 2 is a plan sectional view of the first electrode layer taken along the line AA in Fig. 1,
3 is a cross-sectional view illustrating a light emitting device according to another embodiment of the present invention,
4 to 9 are explanatory views showing a method of manufacturing a light emitting device according to an embodiment,
10 is a perspective view of a light emitting device package including a light emitting device according to an embodiment,
11 is a sectional view of a light emitting device package including a light emitting device according to an embodiment,
12 is a perspective view showing an illumination system including a light emitting device according to an embodiment,
13 is a cross-sectional view showing a CC 'section of the illumination system of FIG. 12,
14 is an exploded perspective view of a liquid crystal display device including a light emitting device according to an embodiment, and
15 is an exploded perspective view of a liquid crystal display device including a light emitting device according to an embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when inverting an element shown in the figures, an element described as "below" or "beneath" of another element may be placed "above" another element. Thus, the exemplary term "below" can include both downward and upward directions. The elements can also be oriented in different directions, so that spatially relative terms can be interpreted according to orientation.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.

Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.

Further, the angle and direction mentioned in the description of the structure of the light emitting device in the embodiment are based on those shown in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

FIG. 1 is a cross-sectional view illustrating a light emitting device according to an embodiment, and FIG. 2 is a plan sectional view of a first electrode layer taken along line A-A of FIG.

Referring to FIG. 1, a light emitting device 100 according to an embodiment includes a conductive substrate 110, a first electrode layer 120 disposed on the conductive substrate 110, a first semiconductor layer 120 disposed on the first electrode layer 120, A light emitting structure 140 having a layer 141, a second semiconductor layer 145, and an active layer 143 located between the first semiconductor layer 141 and the second semiconductor layer 145; And a second electrode layer 150 electrically connected to the second semiconductor layer 145.

The conductive substrate 110 supports the light emitting structure 140 and may provide power to the light emitting structure 140 together with the second electrode layer 150. The conductive substrate 110 may be formed of a material having a high thermal conductivity or a conductive material and may be formed of a metal such as gold (Au), nickel (Ni), tungsten (W), molybdenum (Mo) (Al), Ta, Ag, Pt, Cr, Si, Ge, Ga, As, Zn, , Or formed of two or more alloys, it may be formed of at least one of oxides or nitrides thereof. In addition, Ga 2 O 3 or any one selected from SiC, SiGe, and CuW may be included, and two or more different materials may be stacked. That is, the conductive substrate 110 may be implemented as a carrier wafer.

The conductive substrate 110 facilitates the emission of heat generated in the light emitting device 100, thereby improving the thermal stability of the light emitting device 100.

In the embodiment, the conductive substrate 110 is described as being conductive, but it may not be conductive, but is not limited thereto.

The first electrode layer 120 supplies power to the light emitting structure 140 on the conductive substrate 110. A detailed description of the first electrode layer 120 will be described later.

The light emitting structure 140 includes a first semiconductor layer 141, a second semiconductor layer 145 and an active layer 143 between the first semiconductor layer 141 and the second semiconductor layer 145.

The second semiconductor layer 145 may be formed of an n-type semiconductor layer, and the n-type semiconductor layer may be, for example, In x Al y Ga 1-xy N (0? X? 1, 0? Y? for example, Si, Ge, Sn, Se, Te, or the like can be selected from a semiconductor material having a composition formula of Si, Ge, Sn, Type dopant can be doped. Also, the second semiconductor layer 145 may be selected from a semiconductor material having a composition formula of (Al x Ga 1 -x) 0.5 In 0.5 P.

A second electrode layer 150 electrically connected to the second semiconductor layer 145 may be disposed on the second semiconductor layer 145. The second electrode layer 150 may include at least one pad and / And an electrode having an electrode. The second electrode layer 150 may be disposed in the center region, the outer region, or the corner region of the upper surface of the second semiconductor layer 145, but the present invention is not limited thereto. The second electrode layer 150 may be disposed in a region other than the upper portion of the second semiconductor layer 145, but the present invention is not limited thereto.

The second electrode layer 150 may be formed of a conductive material such as In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, W, , Mo, Nb, Al, Ni and Cu, or may be formed as a single layer or multiple layers.

A concave-convex pattern 160 for improving the light extraction efficiency can be formed on a part of the surface or the entire surface of the second semiconductor layer 145 where the second electrode layer 150 is not formed by a predetermined etching method.

Here, the second electrode layer 150 is formed on a flat surface on which the concavo-convex pattern 160 is not formed, but may be formed on the top surface where the concavo-convex pattern 160 is formed.

The irregular pattern 160 may be formed by performing etching on at least one region of the upper surface of the second semiconductor layer 145, but is not limited thereto. The etching process includes wet and / or dry etching processes. The concavo-convex pattern 160 formed by etching may be irregularly formed in a random size, but is not limited thereto. The uneven pattern 160 may be at least one of irregular irregularities or irregular irregularities.

The concavo-convex pattern 160 may be formed to have various shapes such as a cylinder, a polygonal column, a cone, a polygonal pyramid, a truncated cone, and a polygonal pyramid.

Meanwhile, the concavo-convex pattern 160 may be formed by a method such as PEC (photoelectrochemical), but is not limited thereto. The concave and convex pattern 160 is formed on the upper surface of the second semiconductor layer 145 so that light generated from the active layer 143 is totally reflected from the upper surface of the second semiconductor layer 145 and is prevented from being reabsorbed or scattered The light extraction efficiency of the light emitting device 100 can be improved.

The active layer 143 may be formed under the second semiconductor layer 145. The active layer 143 is a region where electrons and holes are recombined. As the electrons and the holes recombine, the active layer 143 transitions to a low energy level and can generate light having a wavelength corresponding thereto.

The active layer 143 may be formed using a semiconductor material having a composition formula of In x Al y Ga 1-xy N (0? X? 1, 0? Y? 1, 0? X + y? 1) And may be formed of a single quantum well structure or a multi quantum well (MQW) structure. Also, the active layer 143 may be selected from a semiconductor material having a composition formula of (Al X Ga 1 -x) 0.5 In 0.5 P.

Therefore, more electrons are collected at the lower energy level of the quantum well layer, and as a result, the recombination probability of electrons and holes is increased, and the luminous efficiency can be improved. It may also include a quantum wire structure or a quantum dot structure.

The first semiconductor layer 141 may be formed under the active layer 143. The first semiconductor layer 141 is formed of a p-type semiconductor layer, and holes can be injected into the active layer 143. For example, the p-type semiconductor layer may be a semiconductor material having a composition formula of In x Al y Ga 1-xy N (0? X? 1, 0? Y? 1, 0? X + AlN, AlGaN, InGaN, InN, InAlGaN, AlInN and the like, and p-type dopants such as Mg, Zn, Ca, Sr and Ba can be doped. Also, the first semiconductor layer 141 may be selected from a semiconductor material having a composition formula of (Al x Ga 1 -x) 0.5 In 0.5 P.

A third semiconductor layer (not shown) may be formed under the first semiconductor layer 141. Here, the third semiconductor layer may be formed of a semiconductor layer whose polarity is opposite to that of the second semiconductor layer.

Meanwhile, the second semiconductor layer 145, the active layer 143, and the first semiconductor layer 141 may be formed by metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma May be formed by a method such as chemical vapor deposition (PECVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), sputtering, or the like But is not limited thereto.

In addition, unlike the above description, the second semiconductor layer 145 may be formed of a p-type semiconductor layer and the first semiconductor layer 141 may be formed of an n-type semiconductor layer. Accordingly, the light emitting structure 140 may include at least one of an N-P junction, a P-N junction, an N-P-N junction, and a P-N-P junction structure.

The light emitting structure 140 may further include a window layer 130 that reduces a difference in reflectivity between the first electrode layer 120 and the light emitting structure 140. The window layer 130 may be disposed in contact with the first electrode layer 120.

The window layer 130 reduces the reflectance difference between the light emitting structure 140 and the first electrode layer 120, thereby increasing light extraction efficiency.

The window layer 130 may include any one of GaP, GaAsP, and AlGaAs.

In addition, a passivation 170 may be formed to protect a part or the entire region of the outer circumferential surface of the light emitting structure 140 from an external impact or the like, and to prevent an electrical short.

Referring to FIGS. 1 and 2, the first electrode layer 120 may selectively use a metal and a light-transmitting conductive layer to provide power to the light emitting structure 140. The first electrode layer 120 may be formed of a conductive material. For example, a metal such as nickel (Ni), platinum (Pt), ruthenium (Ru), iridium (Ir), rhodium (Rh), tantalum (Ta), molybdenum (Mo), titanium (Ti) (W), Cu, Cr, Pd, V, Co, Nb, Zr, Indium Tin Oxide (ITO) Aluminum zinc oxide (AZO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO) tin oxide, ATO (antimony tin oxide), GZO (gallium zinc oxide), IrO x , RuO x , RuO x / ITO, Ni / IrO x / Au, or Ni / IrO x / Au / ITO . However, the present invention is not limited thereto.

The first electrode layer 120 may include a transparent electrode layer 123, a metal electrode layer 125, and a metal bonding layer 121.

For example, the first electrode layer 120 may be formed by sequentially stacking the metal electrode layer 125 and the transparent electrode layer 123 on the metal bonding layer 121. The light emitting structure 140 further includes a contact portion 126 extending from the metal electrode layer 125 and penetrating the transparent electrode layer 123 to contact the light emitting structure 140.

The transparent electrode layer 123 may be made of a conductive material through which light is transmitted. For example, the transparent electrode layer 123 may include at least one of In 2 O 3 , SnO 2 , ZnO, ITO, CTO, CuAlO 2 , CuGaO 2, and SrCu 2 O 2 . The transparent electrode layer 123 has a region penetrated by the contact portion 126.

The metal electrode layer 125 may include a metal material having excellent conductivity. For example, the metal electrode layer 125 may include Au or an Au alloy, and may be at least one of AuBe and AuGe.

The contact portion 126 is extended from the metal electrode layer 125 and is arranged in a plurality of through holes passing through the transparent electrode layer 123 in the vertical direction. The plurality of contact portions 126 are arranged to be regularly / irregularly spaced from each other. The contact portion 126 makes an ohmic contact with the light emitting structure 140.

At least one surface of the contact portion 126 may be in contact with the first semiconductor layer 141 of the light emitting structure 140.

The material of the contact portion 126 is preferably the same as the material of the metal electrode layer 125. That is, the contact portion 126 may include a metal material having excellent conductivity. For example, the contact portion 126 may comprise Au or an Au alloy (AuBe, AuGe).

At this time, the light emitting structure 140 may have a region including the Be diffused from the contact portion 126 in the region where the contact portion 126 is in contact. In addition, when the light emitting structure 140 includes the window layer 130, the diffusion region 133 may be formed in the window layer 130.

If the first electrode layer 120 is formed of the metal electrode layer 125 having the transparent electrode layer 123 and the contact portion 126 formed thereon, desired reflectivity can be obtained by the Au alloy without using the metal reflective layer, The Be of the second electrode layer 126 is diffused into the light emitting structure 140 to enable ohmic contact between the first electrode layer 120 and the light emitting structure 140 and the metal electrode layer 125 is directly connected to the light emitting structure 140, VF is lowered and the luminous efficiency is increased.

In addition, since the metal reflection layer can be omitted, there is an advantage that manufacturing cost and manufacturing time can be saved.

In addition, the embodiment has an advantage of forming ohmic contact with the light emitting structure 140 while preventing the light from being absorbed by the contact portion 126 by disposing the contact portions 126 apart from each other.

The window layer 130 may be formed with a doped region 133 doped with an impurity in a region where the contact portion 126 contacts.

The doped region 133 is formed in a region where the contact portion 126 contacts the window layer 130 and is preferably doped with a dopant having a polarity such as the polarity of the first semiconductor layer 141. [ Since the first semiconductor layer 141 is assumed to be doped with a p-type dopant, the doping region 133 is doped with a p-type dopant. [0064] When the window layer 130 is doped, The transmittance is decreased, but the ability to make ohmic contact with the contact portion 126 is increased. Therefore, since the doped region 133 is formed only in the region where the doped region 133 contacts the contact portion 126 in the window layer 130, the window layer 130 and the contact portion 126 are in ohmic contact. Further, the doped region 133 is reduced in the window layer 130, so that the light transmittance does not drop significantly. As a result, the formation of the doped region 133 in the window layer 130 allows the ohmic contact of the window layer 130 and the contact portion 126 to be achieved without significantly reducing the light transmittance of the window layer 130 It does. The use of the light emitting device 100 is lowered due to the ohmic contact between the window layer 130 and the contact portion 126 and the light transmittance of the window layer 130 is not lowered much so that the light emitting efficiency is not significantly deteriorated .

The p-type dopant doped in the doped region 133 of the window layer 130 may include any one of Mg, Zn, Ca, Sr, Ba,

If the doped region 133 is doped to a too high concentration, the light transmittance is significantly lowered and doping to too low a concentration may make ohmic contact between the window layer 130 and the contact portion 126 difficult. Therefore, when the doped region 133 is doped with Mg, the doping concentration is 5e 18 / cm 3 to 1e 18 / cm 3 , and when doped with C, the doping concentration is 5e 19 / cm 3 to 1e 19 / cm < 3 & gt ;.

The doped regions 133 are disposed on the window layer 130 in a dot or island shape. Since the arrangement of the doped regions 133 corresponds to the arrangement of the contact portions 126, only the contact portions 126 will be described below.

The doped region 133 may be formed at a predetermined depth on the surface of the window layer 130. In addition, the doped region 133 may protrude from the surface of the window layer 130. That is, the entire surface of the window layer 130 is doped and the surface of the window layer 130 is etched in the process of etching the region except for the doped region 133 so that the surface of the window layer 130 of the doped region 133 As shown in Fig. However, the present invention is not limited thereto.

2, the planar area of the transparent electrode layer 123 is preferably larger than the planar area of the contact part 126. More preferably, the planar area of the contact part 126 is larger than the planar area of the transparent electrode layer 123 123 may be 10% to 25% of the planar area. The ohmic contact between the light emitting structure 140 and the first electrode layer 120 is difficult and the ohmic contact between the light emitting structure 140 and the first electrode layer 120 is difficult when the area of the contact portion 126 on the planar surface is smaller than 10% If the planar area is larger than 25% of the planar area of the transparent electrode layer 123, there is a problem that the light efficiency of the light emitting device 100 is lowered due to the contact part 126 having a low light transmittance.

If the planar area of the contact portion 126 is 10% to 25% of the planar area of the transparent electrode layer 123, for example, the spacing distance between adjacent contact portions 126 is 35 μm to 50 μm, The width of the contact portion 126 is preferably 10 占 퐉 to 20 占 퐉.

The shape of the contact portion 126 is not limited, but may have a rod shape, preferably a cylindrical shape or a polygonal shape.

The first electrode layer 120 may be flat as shown in FIG. 1, but it is not limited thereto and may have a step.

The first electrode layer 120 may further include a rapid bonding layer 121.

The rapid bonding layer 121 may be formed under the metal electrode layer 125 to enhance adhesion between the layers. The rapid bonding layer 121 may be formed using a material having excellent adhesion to a lower material. For example, PbSn alloy, AuGe alloy, AuBe alloy, AuSn alloy, Sn, In, and PdIn alloy. Also,

A diffusion preventing film (not shown) may be further formed on the rapid bonding layer 121. The diffusion barrier layer may prevent diffusion of the material constituting the conductive substrate 110 and the rapid bonding layer 121 into the light emitting structure 140. The diffusion barrier layer may be formed of a material that prevents the diffusion of the metal. For example, the diffusion barrier layer may include at least one of Pt, Pd, W, Ni, Ru, At least one or two or more of iridium (Ir), rhodium (Rh), tantalum (Ta), hafnium (Hf), zirconium (Zr), niobium (Nb) and vanadium (V) However, the present invention is not limited thereto. The rapid bonding layer 121 may have a single-layer structure or a multi-layer structure.

3 is a cross-sectional view illustrating a light emitting device according to another embodiment of the present invention.

Referring to FIG. 3, the light emitting device 100A according to the embodiment further includes a current blocking layer 180 as compared with the embodiment of FIG.

The current blocking layer 180 may be disposed under the light emitting structure 140 in a direction perpendicular to the second electrode layer 150 in the vertical direction and may have a lower electrical conductivity than the metal electrode layer 125. The current blocking layer 180 may be formed of a material such as aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ), titanium oxide (TiO x ), indium tin oxide Tin oxide (ITO), aluminum zinc oxide (AZO), and indium zinc oxide (IZO). However, the present invention is not limited thereto.

The current blocking layer 180 may be formed of a material that prevents electrons injected from the second semiconductor layer 145 to the active layer 143 from being recombined in the active layer 143, And may be an electron blocking layer. The current blocking layer 180 has a band gap relatively larger than that of the active layer 143 so that electrons injected from the second semiconductor layer 145 are not recombined in the active layer 143, It is possible to prevent the phenomenon of being injected. Accordingly, the probability of recombination of electrons and holes in the active layer 143 can be increased and the leakage current can be prevented.

4 to 9 are flow charts showing a manufacturing process of the light emitting device of FIG.

A method of manufacturing a light emitting device according to an embodiment is as follows.

Referring to FIG. 4, a light emitting structure 140 including a second semiconductor layer 145, an active layer 143, and a first semiconductor layer 141 is sequentially stacked on a growth substrate 101.

The growth substrate 101 may be selected from the group consisting of a sapphire substrate (Al 2 O 3 ), GaN, SiC, ZnO, Si, GaP, InP, and GaAs. A buffer layer (not shown) may be formed between the light emitting structures 140.

The buffer layer (not shown) may be a combination of Group 3 and Group 5 elements, or may be formed of any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN, and dopant may be doped.

An undoped semiconductor layer (not shown) may be formed on the growth substrate 101 or the buffer layer (not shown), and either or both of a buffer layer (not shown) and an undoped semiconductor layer Or not, and is not limited to such a structure.

Referring to FIG. 5, a window layer 130 is disposed on the light emitting structure 140.

Then, the surface of the window layer 130 is doped with an impurity.

A PR (Photo Resist) 10 having a predetermined pattern may be disposed on the window layer 130. At this time, the PRs 10 may be arranged in a predetermined pattern corresponding to the contacts 126 considering current diffusion and light extraction efficiency.

Thereafter, a region other than the region vertically overlapped with the region where the PR 10 is disposed in the window layer 130 is removed. Thus, the doped region 133 is formed in the window layer 130.

Referring to FIG. 6, a transparent electrode layer 123 is formed on the window layer 130, and the PR 10 is formed.

A PR (photo resist) 10 having a predetermined pattern may be disposed on the transparent electrode layer 123. At this time, the PRs 10 may be arranged in a predetermined pattern corresponding to the contacts 126 considering current diffusion and light extraction efficiency.

Thereafter, a region of the transparent electrode layer 123 other than the region vertically overlapped with the region where the PR 10 is disposed is removed. At this time, the section to be removed may have a rectangular shape and may have a curvature or a step. It is not limited thereto. The removal method may be, but not limited to, wet etching, dry etching, or laser lift off (LLO) method.

Referring to FIG. 7, the PR 10 may be removed, and the contact portion 126 and the metal electrode layer 125 may be formed in the etched region.

Referring to FIG. 8, the conductive substrate 110 on which the metal bonding layer 121 is disposed is bonded and bonded. At this time, the growth substrate 101 disposed on the second semiconductor layer 145 can be separated.

At this time, the growth substrate 101 can be removed by a physical or / and chemical method, and the physical method can be removed, for example, by a LLO (laser lift off) method.

Referring to FIG. 9, a passivation 170 may be formed on a part or the whole of the outer circumferential surface of the light emitting structure 140.

The uneven pattern 160 may be formed on a part of the surface of the second semiconductor layer 145 of the light emitting structure 140 or on the entire surface of the second semiconductor layer 145 by a predetermined etching method. The second electrode layer 150 is formed.

In addition, at least one process in the process sequence shown in FIGS. 4 to 9 may be changed in order, but is not limited thereto.

10 is a perspective view illustrating a light emitting device package including the light emitting device according to the embodiment, and FIG. 11 is a cross-sectional view illustrating a light emitting device package including the light emitting device according to the embodiment.

10 and 11, the light emitting device package 500 includes a body 510 having a cavity 520, first and second lead frames 540 and 550 mounted on the body 510, A light emitting device 530 electrically connected to the first and second lead frames 540 and 550 and an encapsulant (not shown) encapsulated in the cavity 520 to cover the light emitting device 530.

The body 510 may be made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), liquid crystal polymer (PSG), polyamide 9T (SPS), a metal material, sapphire (Al 2 O 3 ), beryllium oxide (BeO), and a printed circuit board (PCB). The body 510 may be formed by injection molding, etching, or the like, but is not limited thereto.

The inner surface of the body 510 may be formed with an inclined surface. The reflection angle of the light emitted from the light emitting device 530 can be changed according to the angle of the inclined surface, and thus the directivity angle of the light emitted to the outside can be controlled.

Concentration of light emitted to the outside from the light emitting device 530 increases as the directivity angle of light decreases. Conversely, as the directivity angle of light increases, the concentration of light emitted from the light emitting device 530 decreases.

The shape of the cavity 520 formed in the body 510 may be circular, rectangular, polygonal, elliptical, or the like, and may have a curved shape, but the present invention is not limited thereto.

The light emitting element 530 is mounted on the first lead frame 540 and may be a light emitting element that emits light such as red, green, blue, or white, or a UV (Ultra Violet) However, the present invention is not limited thereto. In addition, one or more light emitting elements 530 may be mounted.

The light emitting device 530 may be a horizontal type or a vertical type formed on the upper or lower surface of the light emitting device 530 or a flip chip Applicable.

The encapsulant (not shown) may be filled in the cavity 520 to cover the light emitting device 530.

The encapsulant (not shown) may be formed of silicon, epoxy, or other resin material. The encapsulant may be filled in the cavity 520 and ultraviolet or thermally cured.

In addition, the encapsulant (not shown) may include a phosphor, and the phosphor may be selected to be a wavelength of light emitted from the light emitting device 530 so that the light emitting device package 500 may emit white light.

The phosphor may be one of a blue light emitting phosphor, a blue light emitting phosphor, a green light emitting phosphor, a sulfur green light emitting phosphor, a yellow light emitting phosphor, a yellow red light emitting phosphor, an orange light emitting phosphor, and a red light emitting phosphor depending on the wavelength of light emitted from the light emitting device 530 Can be applied.

That is, the phosphor may be excited by the light having the first light emitted from the light emitting device 530 to generate the second light. For example, when the light emitting element 530 is a blue light emitting diode and the phosphor is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, and blue light and blue light emitted from the blue light emitting diode As the excited yellow light is mixed, the light emitting device package 500 can provide white light.

Similarly, when the light emitting element 530 is a green light emitting diode, the magenta phosphor or the blue and red phosphors are mixed, and when the light emitting element 530 is a red light emitting diode, the cyan phosphors or the blue and green phosphors are mixed For example.

Such a fluorescent material may be a known fluorescent material such as a YAG, TAG, sulfide, silicate, aluminate, nitride, carbide, nitridosilicate, borate, fluoride or phosphate.

The first and second lead frames 540 and 550 may be formed of a metal material such as titanium, copper, nickel, gold, chromium, tantalum, (Pt), tin (Sn), silver (Ag), phosphorus (P), aluminum (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium , Hafnium (Hf), ruthenium (Ru), and iron (Fe). Also, the first and second lead frames 540 and 550 may be formed to have a single layer or a multilayer structure, but the present invention is not limited thereto.

The first and second lead frames 540 and 550 are separated from each other and electrically separated from each other. The light emitting element 530 is mounted on the first and second lead frames 540 and 550 and the first and second lead frames 540 and 550 are in direct contact with the light emitting element 530, And may be electrically connected through a conductive material such as a conductive material. In addition, the light emitting device 530 may be electrically connected to the first and second lead frames 540 and 550 through wire bonding, but is not limited thereto. Accordingly, when power is supplied to the first and second lead frames 540 and 550, power may be applied to the light emitting device 530. Meanwhile, a plurality of lead frames (not shown) may be mounted in the body 510 and each lead frame (not shown) may be electrically connected to the light emitting device 530, but is not limited thereto.

FIG. 12 is a perspective view showing a lighting device including a light emitting device according to an embodiment, and FIG. 13 is a sectional view showing a C-C 'sectional view of the lighting device of FIG.

12 and 13, the lighting device 600 may include a body 610, a cover 630 coupled to the body 610, and a finishing cap 650 positioned at opposite ends of the body 610 have.

A light emitting device module 640 is coupled to a lower surface of the body 610. The body 610 is electrically conductive so that heat generated from the light emitting device package 644 can be emitted to the outside through the upper surface of the body 610. [ And a metal material having an excellent heat dissipation effect.

The light emitting device package 644 may be mounted on the PCB 642 in a multi-color, multi-row manner to form an array. The light emitting device package 644 may be mounted at equal intervals or may be mounted with various spacings as required. As the PCB 642, MPPCB (Metal Core PCB) or FR4 material PCB can be used.

The light emitting device package 644 may include an extended lead frame (not shown) and may have an improved heat dissipation function. Thus, the reliability and efficiency of the light emitting device package 644 may be improved, The service life of the illumination device 600 including the element package 644 can be extended.

The cover 630 may be formed in a circular shape so as to surround the lower surface of the body 610, but is not limited thereto.

The cover 630 protects the internal light emitting element module 640 from foreign substances or the like. The cover 630 may include diffusion particles so as to prevent glare of light generated in the light emitting device package 644 and uniformly emit light to the outside, and may include at least one of an inner surface and an outer surface of the cover 630 A prism pattern or the like may be formed on one side. Further, the phosphor may be applied to at least one of the inner surface and the outer surface of the cover 630.

Since the light generated in the light emitting device package 644 is emitted to the outside through the cover 630, the cover 630 must have a high light transmittance and sufficient heat resistance to withstand the heat generated in the light emitting device package 644 The cover 630 is preferably formed of a material including polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), or the like .

The finishing cap 650 is located at both ends of the body 610 and can be used to seal the power supply unit (not shown). In addition, the finishing cap 650 is provided with the power supply pin 652, so that the lighting apparatus 600 according to the embodiment can be used immediately without a separate device on the terminal from which the conventional fluorescent lamp is removed.

14 is an exploded perspective view of a liquid crystal display device including a light emitting device according to an embodiment.

14, the liquid crystal display 700 may include a liquid crystal display panel 710 and a backlight unit 770 for providing light to the liquid crystal display panel 710 in an edge-light manner.

The liquid crystal display panel 710 can display an image using light provided from the backlight unit 770. The liquid crystal display panel 710 may include a color filter substrate 712 and a thin film transistor substrate 714 facing each other with a liquid crystal therebetween.

The color filter substrate 712 can realize the color of an image to be displayed through the liquid crystal display panel 710.

The thin film transistor substrate 714 is electrically connected to a printed circuit board 718 on which a plurality of circuit components are mounted via a driving film 717. The thin film transistor substrate 714 may apply a driving voltage provided from the printed circuit board 718 to the liquid crystal in response to a driving signal provided from the printed circuit board 718. [

The thin film transistor substrate 714 may include a thin film transistor and a pixel electrode formed as a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 770 includes a light emitting element module 720 that outputs light, a light guide plate 730 that changes the light provided from the light emitting element module 720 into a surface light source and provides the light to the liquid crystal display panel 710, A plurality of films 752, 766, and 764 for uniformly distributing the luminance of light provided from the light guide plate 730 and improving vertical incidence and a reflective sheet (reflective plate) for reflecting light emitted to the rear of the light guide plate 730 to the light guide plate 730 747).

The light emitting device module 720 may include a PCB substrate 722 for mounting a plurality of light emitting device packages 724 and a plurality of light emitting device packages 724 to form an array. In this case, the reliability of the mounting of the bent light emitting device package 724 can be improved.

The backlight unit 770 includes a diffusion film 766 for diffusing light incident from the light guide plate 730 toward the liquid crystal display panel 710 and a prism film 752 for enhancing vertical incidence by condensing the diffused light. , And may include a protective film 764 for protecting the prism film 750.

15 is an exploded perspective view of a liquid crystal display device including a light emitting device according to an embodiment. However, the parts shown and described in Fig. 14 are not repeatedly described in detail.

15, the liquid crystal display device 800 may include a liquid crystal display panel 810 and a backlight unit 870 for providing light to the liquid crystal display panel 810 in a direct-down manner.

Since the liquid crystal display panel 810 is the same as that described in Fig. 14, the detailed description is omitted.

The backlight unit 870 includes a plurality of light emitting element modules 823, a reflective sheet 824, a lower chassis 830 in which the light emitting element module 823 and the reflective sheet 824 are accommodated, And a plurality of optical films 860. The diffuser plate 840 and the plurality of optical films 860 are disposed on the light guide plate 840. [

The light emitting device module 823 may include a PCB substrate 821 to mount a plurality of light emitting device packages 822 and a plurality of light emitting device packages 822 to form an array.

The reflective sheet 824 reflects light generated from the light emitting device package 822 in a direction in which the liquid crystal display panel 810 is positioned, thereby improving light utilization efficiency.

Light generated in the light emitting element module 823 is incident on the diffusion plate 840 and an optical film 860 is disposed on the diffusion plate 840. The optical film 860 may include a diffusion film 866, a prism film 850, and a protective film 864.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims (24)

A conductive substrate;
A first electrode layer disposed on the conductive substrate;
A light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, the active layer being disposed on the first electrode layer; And
And a second electrode layer electrically connected to the second semiconductor layer,
Wherein the first electrode layer comprises a first electrode layer,
A metal electrode layer disposed on the conductive substrate;
A transparent electrode layer disposed on the metal electrode layer;
And a contact portion extending from the metal electrode layer and penetrating the transparent electrode layer to contact the light emitting structure,
Wherein the plurality of contact portions are spaced apart from each other and include at least one of Au and Be. The method according to claim 1,
Wherein the transparent electrode layer
And at least one of In 2 O 3 , SnO 2 , ZnO, ITO, CTO, CuAlO 2 , CuGaO 2 and SrCu 2 O 2 . The method according to claim 1,
Wherein a planar area of the transparent electrode layer is larger than a planar area of the contact portion. The method according to claim 1,
Wherein the material of the metal electrode layer is the same as the material of the contact portion. The method according to claim 1,
Wherein the contact portion has a cylindrical or polygonal shape. The method according to claim 1,
And Be is diffused on a surface of the light emitting structure to which the contact portion contacts. The method according to claim 1,
Wherein the light emitting structure further comprises a window layer in contact with the first electrode layer. 8. The method of claim 7,
Wherein the window layer comprises any one of GaP, GaAsP, and AlGaAs. 8. The method of claim 7,
Wherein the window layer of the light emitting structure includes a doped region doped with a dopant having a polarity the same as the polarity of the first semiconductor layer in a region where the contact portion contacts. 10. The method of claim 9,
Wherein the doped region is doped with a p-type dopant. 11. The method of claim 10,
Wherein the p-type dopant comprises any one of Mg, Zn, Ca, Sr, Ba and C; 10. The method of claim 9,
And the doped region protrudes from a surface of the window layer. The method according to claim 1,
Wherein the first semiconductor layer is doped with a p-type dopant, and the second semiconductor layer is doped with an n-type dopant. The method according to claim 1,
The light-
A light emitting device comprising AlGaInP or GaInP. The method according to claim 1,
Wherein the first electrode layer comprises a first electrode layer,
And a metal bonding layer disposed under the metal electrode layer. The method according to claim 1,
Wherein the conductive substrate comprises any one of Si, Ge, SiC, and AlN. 16. The method of claim 15,
Wherein the metal bonding layer comprises any one of a PbSn alloy, an AuGe alloy, an AuBe alloy, an AuSn alloy, Sn, In, and a PdIn alloy. The method according to claim 1,
And a concavo-convex pattern for improving light extraction efficiency is formed on the upper surface of the second semiconductor layer. The method according to claim 1,
Wherein at least a part of an outer circumferential surface of the light emitting structure has a passivation layer for isolating the passivation layer from the outside. The method according to claim 1,
And a current blocking layer disposed below the light emitting structure and having at least one region superposed in a direction perpendicular to the second electrode layer and having a lower electrical conductivity than the first electrode layer. 3. The method of claim 2,
The current blocking layer
(Al 2 O 3 ), silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ), titanium oxide (TiO x ), aluminum zinc oxide (AZO) and indium zinc oxide (IZO, Indium Zinc Oxide). A light emitting device package comprising a light emitting element,
The light-
A conductive substrate;
A first electrode layer disposed on the conductive substrate;
A light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, the active layer being disposed on the first electrode layer; And
And a second electrode layer electrically connected to the second semiconductor,
Wherein the first electrode layer comprises a first electrode layer,
A metal electrode layer disposed on the conductive substrate;
A transparent electrode layer disposed on the metal electrode layer;
And a metal electrode layer contact portion extending from the metal electrode layer and penetrating the transparent electrode layer to contact the light emitting structure,
Wherein the plurality of contact portions are disposed apart from each other and include at least one of Au and Be. In an illumination system including a light emitting element,
The light-
A conductive substrate;
A first electrode layer disposed on the conductive substrate;
A light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, the active layer being disposed on the first electrode layer; And
And a second electrode layer electrically connected to the second semiconductor,
Wherein the first electrode layer comprises a first electrode layer,
A metal electrode layer disposed on the conductive substrate;
A transparent electrode layer disposed on the metal electrode layer;
And a metal electrode layer contact portion extending from the metal electrode layer and penetrating the transparent electrode layer to contact the light emitting structure,
Wherein the plurality of contact portions are disposed apart from each other and include at least one of Au and Be. In a backlight unit including a light emitting element,
The light-
A conductive substrate;
A first electrode layer disposed on the conductive substrate;
A light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, the active layer being disposed on the first electrode layer; And
And a second electrode layer electrically connected to the second semiconductor,
Wherein the first electrode layer comprises a first electrode layer,
A metal electrode layer disposed on the conductive substrate;
A transparent electrode layer disposed on the metal electrode layer;
And a metal electrode layer contact portion extending from the metal electrode layer and penetrating the transparent electrode layer to contact the light emitting structure,
Wherein the plurality of contact portions are disposed apart from each other and include at least one of Au and Be.
KR1020130010621A 2013-01-30 2013-01-30 Light emitting device KR20140097900A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020130010621A KR20140097900A (en) 2013-01-30 2013-01-30 Light emitting device
EP14153038.6A EP2763195A3 (en) 2013-01-30 2014-01-29 Light emitting device
CN201410043853.3A CN103972348B (en) 2013-01-30 2014-01-29 Luminescent device
TW103103374A TWI600183B (en) 2013-01-30 2014-01-29 Light emitting device
US14/167,833 US9112114B2 (en) 2013-01-30 2014-01-29 Light emitting device with metal electrode layer having protrusion portions
JP2014015331A JP6320769B2 (en) 2013-01-30 2014-01-30 Light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020130010621A KR20140097900A (en) 2013-01-30 2013-01-30 Light emitting device

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110537262A (en) * 2017-06-07 2019-12-03 Lg 伊诺特有限公司 Semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110537262A (en) * 2017-06-07 2019-12-03 Lg 伊诺特有限公司 Semiconductor devices
CN110537262B (en) * 2017-06-07 2023-08-29 苏州立琻半导体有限公司 Semiconductor device with a semiconductor layer having a plurality of semiconductor layers

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