KR101885205B1 - 자기장 센서 내의 전이 신호를 감소시키는 장치 및 방법 - Google Patents

자기장 센서 내의 전이 신호를 감소시키는 장치 및 방법 Download PDF

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KR101885205B1
KR101885205B1 KR1020137010373A KR20137010373A KR101885205B1 KR 101885205 B1 KR101885205 B1 KR 101885205B1 KR 1020137010373 A KR1020137010373 A KR 1020137010373A KR 20137010373 A KR20137010373 A KR 20137010373A KR 101885205 B1 KR101885205 B1 KR 101885205B1
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circuit
magnetic field
loop
compensation
signal
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KR20130100316A (ko
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웨이화 첸
마이클 지. 워드
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알레그로 마이크로시스템스, 엘엘씨
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0023—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
    • G01R33/0029—Treating the measured signals, e.g. removing offset or noise
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
  • Measuring Magnetic Variables (AREA)
KR1020137010373A 2010-10-08 2011-09-14 자기장 센서 내의 전이 신호를 감소시키는 장치 및 방법 Active KR101885205B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/900,969 2010-10-08
US12/900,969 US8339134B2 (en) 2010-10-08 2010-10-08 Apparatus and method for reducing a transient signal in a magnetic field sensor
PCT/US2011/051492 WO2012047463A1 (en) 2010-10-08 2011-09-14 Apparatus and method for reducing a transient signal in a magnetic field sensor

Publications (2)

Publication Number Publication Date
KR20130100316A KR20130100316A (ko) 2013-09-10
KR101885205B1 true KR101885205B1 (ko) 2018-08-03

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KR1020137010373A Active KR101885205B1 (ko) 2010-10-08 2011-09-14 자기장 센서 내의 전이 신호를 감소시키는 장치 및 방법

Country Status (5)

Country Link
US (3) US8339134B2 (enExample)
EP (1) EP2609442B1 (enExample)
JP (2) JP6017429B2 (enExample)
KR (1) KR101885205B1 (enExample)
WO (1) WO2012047463A1 (enExample)

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US9966873B2 (en) * 2014-08-12 2018-05-08 Yiqiang Jake Zhang Active switching rectifier employing MOSFET and current-based control using a hall-effect switch
JP6390709B2 (ja) * 2014-10-10 2018-09-19 日立金属株式会社 電流検出装置、及び電流検出方法
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KR102426433B1 (ko) 2015-11-09 2022-07-29 삼성디스플레이 주식회사 플렉서블 표시 장치 및 이의 제조 방법
WO2017099156A1 (ja) 2015-12-11 2017-06-15 旭化成エレクトロニクス株式会社 磁気センサ
US9810721B2 (en) 2015-12-23 2017-11-07 Melexis Technologies Sa Method of making a current sensor and current sensor
US10505102B2 (en) 2016-04-04 2019-12-10 Infineon Technologies Ag Semiconductor device for sensing a magnetic field including an encapsulation material defining a through-hole
JP2018004269A (ja) * 2016-06-27 2018-01-11 アイシン精機株式会社 電流センサ
US10353019B2 (en) * 2016-07-18 2019-07-16 Apple Inc. High dynamic range magnetometer architecture
JP2021028571A (ja) * 2017-09-27 2021-02-25 株式会社村田製作所 電流センサ
EP3508863B1 (en) * 2018-01-05 2023-06-07 Melexis Technologies SA Offset current sensor structure
US10983179B2 (en) 2018-07-02 2021-04-20 Asahi Kasei Microdevices Corporation Magnetic field measuring device, magnetic field measurement method, and recording medium having recorded thereon magnetic field measurement program
US20200003846A1 (en) * 2018-07-02 2020-01-02 Asahi Kasei Microdevices Corporation Magnetic field measuring device, magnetic field measurement method, and recording medium having recorded thereon magnetic field measurement program
US10763219B2 (en) 2018-08-14 2020-09-01 Allegro Microsystems, Llc Signal conductor routing configurations and techniques
JP2020101464A (ja) * 2018-12-21 2020-07-02 アイシン精機株式会社 磁束検出ユニット
CN111586960B (zh) * 2019-02-15 2021-09-14 华为技术有限公司 一种抗干扰电路板及终端
DE102020211526A1 (de) * 2019-09-20 2021-03-25 Robert Bosch Gesellschaft mit beschränkter Haftung Sensorvorrichtung mit Sensor und Stromrichter
EP3796007B1 (en) * 2019-09-21 2022-03-02 LEM International SA Current transducer
JP7369020B2 (ja) * 2019-11-27 2023-10-25 新電元工業株式会社 電流検出器及びパワーモジュール
TW202201038A (zh) * 2020-03-13 2022-01-01 日商艾普凌科有限公司 半導體裝置
US12367135B1 (en) 2024-03-25 2025-07-22 Allegro Microsystems, Llc Circuit having start up trimming

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US20070114992A1 (en) 2005-11-23 2007-05-24 Honeywell International Inc. Closed-loop magnetic sensor system

Also Published As

Publication number Publication date
JP2013539051A (ja) 2013-10-17
US8339134B2 (en) 2012-12-25
EP2609442A1 (en) 2013-07-03
US20120086444A1 (en) 2012-04-12
EP2609442B1 (en) 2014-04-16
JP2017021043A (ja) 2017-01-26
KR20130100316A (ko) 2013-09-10
JP6017429B2 (ja) 2016-11-02
WO2012047463A1 (en) 2012-04-12
US8451002B2 (en) 2013-05-28
US20130009638A1 (en) 2013-01-10
JP6220433B2 (ja) 2017-10-25
US8542011B2 (en) 2013-09-24
US20130214778A1 (en) 2013-08-22

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