KR101869528B1 - 금속 화합물이 화학적으로 고정된 콜로이드성 입자 및 이를 제조하는 방법 및 이의 용도 - Google Patents
금속 화합물이 화학적으로 고정된 콜로이드성 입자 및 이를 제조하는 방법 및 이의 용도 Download PDFInfo
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- KR101869528B1 KR101869528B1 KR1020160034494A KR20160034494A KR101869528B1 KR 101869528 B1 KR101869528 B1 KR 101869528B1 KR 1020160034494 A KR1020160034494 A KR 1020160034494A KR 20160034494 A KR20160034494 A KR 20160034494A KR 101869528 B1 KR101869528 B1 KR 101869528B1
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- particles
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- colloidal particles
- metal compound
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
- B01J31/02—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides
- B01J31/04—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides containing carboxylic acids or their salts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
- B01J31/16—Catalysts comprising hydrides, coordination complexes or organic compounds containing coordination complexes
- B01J31/1616—Coordination complexes, e.g. organometallic complexes, immobilised on an inorganic support, e.g. ship-in-a-bottle type catalysts
- B01J31/1625—Coordination complexes, e.g. organometallic complexes, immobilised on an inorganic support, e.g. ship-in-a-bottle type catalysts immobilised by covalent linkages, i.e. pendant complexes with optional linking groups
- B01J31/1633—Coordination complexes, e.g. organometallic complexes, immobilised on an inorganic support, e.g. ship-in-a-bottle type catalysts immobilised by covalent linkages, i.e. pendant complexes with optional linking groups covalent linkages via silicon containing groups
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
- B01J31/16—Catalysts comprising hydrides, coordination complexes or organic compounds containing coordination complexes
- B01J31/22—Organic complexes
- B01J31/2204—Organic complexes the ligands containing oxygen or sulfur as complexing atoms
- B01J31/2208—Oxygen, e.g. acetylacetonates
- B01J31/2226—Anionic ligands, i.e. the overall ligand carries at least one formal negative charge
- B01J31/223—At least two oxygen atoms present in one at least bidentate or bridging ligand
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/20—Catalysts, in general, characterised by their form or physical properties characterised by their non-solid state
- B01J35/23—Catalysts, in general, characterised by their form or physical properties characterised by their non-solid state in a colloidal state
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/02—Iron compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
- C09K3/1445—Composite particles, e.g. coated particles the coating consisting exclusively of metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
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- H01L21/304—
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- H01L21/30625—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2531/00—Additional information regarding catalytic systems classified in B01J31/00
- B01J2531/80—Complexes comprising metals of Group VIII as the central metal
- B01J2531/84—Metals of the iron group
- B01J2531/842—Iron
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Catalysts (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020180034676A KR102330206B1 (ko) | 2015-03-23 | 2018-03-26 | 금속 화합물이 화학적으로 고정된 콜로이드성 입자 및 이를 제조하는 방법 및 이의 용도 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562136706P | 2015-03-23 | 2015-03-23 | |
| US62/136,706 | 2015-03-23 | ||
| US15/070,590 | 2016-03-15 | ||
| US15/070,590 US10160884B2 (en) | 2015-03-23 | 2016-03-15 | Metal compound chemically anchored colloidal particles and methods of production and use thereof |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020180034676A Division KR102330206B1 (ko) | 2015-03-23 | 2018-03-26 | 금속 화합물이 화학적으로 고정된 콜로이드성 입자 및 이를 제조하는 방법 및 이의 용도 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20160113995A KR20160113995A (ko) | 2016-10-04 |
| KR101869528B1 true KR101869528B1 (ko) | 2018-06-22 |
Family
ID=56014766
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020160034494A Expired - Fee Related KR101869528B1 (ko) | 2015-03-23 | 2016-03-23 | 금속 화합물이 화학적으로 고정된 콜로이드성 입자 및 이를 제조하는 방법 및 이의 용도 |
| KR1020180034676A Active KR102330206B1 (ko) | 2015-03-23 | 2018-03-26 | 금속 화합물이 화학적으로 고정된 콜로이드성 입자 및 이를 제조하는 방법 및 이의 용도 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020180034676A Active KR102330206B1 (ko) | 2015-03-23 | 2018-03-26 | 금속 화합물이 화학적으로 고정된 콜로이드성 입자 및 이를 제조하는 방법 및 이의 용도 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US10160884B2 (https=) |
| EP (1) | EP3081614A3 (https=) |
| JP (1) | JP6276315B2 (https=) |
| KR (2) | KR101869528B1 (https=) |
| CN (1) | CN105983441B (https=) |
| IL (1) | IL244674B (https=) |
| SG (1) | SG10201602254PA (https=) |
| TW (1) | TWI603778B (https=) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20170044522A (ko) * | 2015-10-15 | 2017-04-25 | 삼성전자주식회사 | 화학적 기계적 연마용 슬러리 조성물, 그의 제조 방법, 그를 이용한 연마 방법 |
| JP6900165B2 (ja) | 2016-10-04 | 2021-07-07 | 矢崎総業株式会社 | 車両用表示装置 |
| KR102524807B1 (ko) * | 2016-11-04 | 2023-04-25 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| WO2019151145A1 (ja) * | 2018-02-05 | 2019-08-08 | Jsr株式会社 | 化学機械研磨用組成物及び研磨方法 |
| US20190352535A1 (en) * | 2018-05-21 | 2019-11-21 | Versum Materials Us, Llc | Chemical Mechanical Polishing Tungsten Buffing Slurries |
| JP6784798B2 (ja) * | 2018-06-01 | 2020-11-11 | ケーシーテック カンパニー リミテッド | 研磨用スラリー組成物 |
| US20190382619A1 (en) * | 2018-06-18 | 2019-12-19 | Versum Materials Us, Llc | Tungsten Chemical Mechanical Polishing Compositions |
| SG10201904669TA (en) | 2018-06-28 | 2020-01-30 | Kctech Co Ltd | Polishing Slurry Composition |
| US10995238B2 (en) * | 2018-07-03 | 2021-05-04 | Rohm And Haas Electronic Materials Cmp Holdings | Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten |
| US11643599B2 (en) | 2018-07-20 | 2023-05-09 | Versum Materials Us, Llc | Tungsten chemical mechanical polishing for reduced oxide erosion |
| US11111435B2 (en) | 2018-07-31 | 2021-09-07 | Versum Materials Us, Llc | Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography |
| US11198797B2 (en) * | 2019-01-24 | 2021-12-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing compositions having stabilized abrasive particles for polishing dielectric substrates |
| KR102782857B1 (ko) | 2019-03-13 | 2025-03-14 | 삼성전자주식회사 | 연마 슬러리 및 반도체 소자의 제조 방법 |
| EP4010443A1 (en) * | 2019-08-08 | 2022-06-15 | Basf Se | Compositions for tungsten etching inhibition |
| TW202132527A (zh) * | 2019-12-12 | 2021-09-01 | 日商Jsr股份有限公司 | 化學機械研磨用組成物及研磨方法 |
| KR20210095465A (ko) | 2020-01-23 | 2021-08-02 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법 |
| KR102623640B1 (ko) * | 2020-07-22 | 2024-01-11 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법 |
| TWI877406B (zh) * | 2020-09-25 | 2025-03-21 | 日商福吉米股份有限公司 | 化學機械研磨漿料、化學機械研磨組合物、用於研磨表面的方法、及緩衝金屬氧化物鹽的方法 |
| CN112742606B (zh) * | 2020-12-24 | 2022-10-28 | 辽宁省地质矿产研究院有限责任公司 | 一种新型磁黄铁矿复合活化药剂及其应用 |
| CN115873507B (zh) * | 2022-12-06 | 2025-09-23 | 万华化学集团电子材料有限公司 | 一种钨化学机械抛光液及其应用 |
| CN116814169B (zh) * | 2023-06-30 | 2025-07-08 | 深圳市朗纳研磨材料有限公司 | 一种具有光催化辅助功效的抛光液及其制备方法 |
| US20260092196A1 (en) * | 2024-09-27 | 2026-04-02 | Entegris, Inc. | Cmp composition including ceria polymer composite particles |
| WO2026078797A1 (ja) * | 2024-10-08 | 2026-04-16 | 株式会社レゾナック | 砥粒、スラリ、研磨方法、及び、部品の製造方法 |
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| US4478742A (en) | 1981-09-17 | 1984-10-23 | Nalco Chemical Company | Preparation of a ferric acetate coated silica sol by selective anion exchange |
| US4789648A (en) | 1985-10-28 | 1988-12-06 | International Business Machines Corporation | Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias |
| CA2139313A1 (en) | 1992-07-28 | 1994-02-03 | Ahmet Celikkaya | Abrasive grain with metal oxide coating, method of making same and abrasive products |
| US6206756B1 (en) * | 1998-11-10 | 2001-03-27 | Micron Technology, Inc. | Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
| JP4038912B2 (ja) * | 1999-01-18 | 2008-01-30 | Jsr株式会社 | 複合粒子を含有する研磨剤及び研磨剤用複合粒子の製造方法 |
| KR100447551B1 (ko) | 1999-01-18 | 2004-09-08 | 가부시끼가이샤 도시바 | 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법 |
| KR100444239B1 (ko) | 1999-11-22 | 2004-08-11 | 제이에스알 가부시끼가이샤 | 복합화 입자의 제조 방법, 이 방법에 의해 제조되는복합화 입자 및 이 복합화 입자를 함유하는 화학 기계연마용 수계 분산체, 및 화학 기계 연마용 수계 분산체의제조 방법 |
| JP4151179B2 (ja) * | 1999-11-22 | 2008-09-17 | Jsr株式会社 | 複合粒子の製造方法及びこの方法により製造される複合粒子並びに複合粒子を含有する化学機械研磨用水系分散体 |
| EP1188714B1 (en) | 2000-01-25 | 2015-03-04 | Nippon Aerosil Co., Ltd. | Oxide powder and method for preparing the same, and product using the same |
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| US20030162398A1 (en) | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
| JP2007095714A (ja) | 2005-09-26 | 2007-04-12 | Fujifilm Corp | 研磨方法 |
| DE102005053618A1 (de) * | 2005-11-10 | 2007-05-16 | Merck Patent Gmbh | Nanoskalige Partikel als Kontrastmittel für die Kernspintomographie |
| JP2007177137A (ja) | 2005-12-28 | 2007-07-12 | Nissan Motor Co Ltd | 金属酸化物誘導体、樹脂組成物、及び樹脂組成物の製造方法 |
| US20080105652A1 (en) | 2006-11-02 | 2008-05-08 | Cabot Microelectronics Corporation | CMP of copper/ruthenium/tantalum substrates |
| US20080149591A1 (en) | 2006-12-21 | 2008-06-26 | Junaid Ahmed Siddiqui | Method and slurry for reducing corrosion on tungsten during chemical mechanical polishing |
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| JP2009209025A (ja) | 2008-03-06 | 2009-09-17 | Oji Paper Co Ltd | 複合微粒子とその製造方法及びそれを用いたインクジェット記録体 |
| FR2951091B1 (fr) | 2009-10-08 | 2011-11-25 | Commissariat Energie Atomique | Formation de particules metalliques sur un support solide a base d'oxyde et muni de deux fonctions chimiques distinctes greffees |
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| KR101243331B1 (ko) | 2010-12-17 | 2013-03-13 | 솔브레인 주식회사 | 화학 기계적 연마 슬러리 조성물 및 이를 이용하는 반도체 소자의 제조 방법 |
| TWI574916B (zh) | 2011-09-19 | 2017-03-21 | 盟智科技股份有限公司 | 吸附有金屬離子的二氧化矽及其製造方法 |
| CN102516876B (zh) | 2011-11-22 | 2014-06-04 | 清华大学 | 一种用于硅晶片抛光的抛光组合物及其制备方法 |
| US20140315386A1 (en) * | 2013-04-19 | 2014-10-23 | Air Products And Chemicals, Inc. | Metal Compound Coated Colloidal Particles Process for Making and Use Therefor |
-
2016
- 2016-03-15 US US15/070,590 patent/US10160884B2/en active Active
- 2016-03-20 IL IL244674A patent/IL244674B/en unknown
- 2016-03-22 SG SG10201602254PA patent/SG10201602254PA/en unknown
- 2016-03-22 TW TW105108882A patent/TWI603778B/zh active
- 2016-03-22 EP EP16161728.7A patent/EP3081614A3/en not_active Withdrawn
- 2016-03-23 CN CN201610170305.6A patent/CN105983441B/zh not_active Expired - Fee Related
- 2016-03-23 KR KR1020160034494A patent/KR101869528B1/ko not_active Expired - Fee Related
- 2016-03-23 JP JP2016058913A patent/JP6276315B2/ja not_active Expired - Fee Related
-
2018
- 2018-03-26 KR KR1020180034676A patent/KR102330206B1/ko active Active
- 2018-11-13 US US16/188,523 patent/US11104825B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20190100678A1 (en) | 2019-04-04 |
| EP3081614A2 (en) | 2016-10-19 |
| TW201637712A (zh) | 2016-11-01 |
| US10160884B2 (en) | 2018-12-25 |
| CN105983441A (zh) | 2016-10-05 |
| TWI603778B (zh) | 2017-11-01 |
| EP3081614A3 (en) | 2017-01-11 |
| KR20160113995A (ko) | 2016-10-04 |
| IL244674B (en) | 2021-09-30 |
| US11104825B2 (en) | 2021-08-31 |
| JP6276315B2 (ja) | 2018-02-07 |
| IL244674A0 (en) | 2016-07-31 |
| KR20180036932A (ko) | 2018-04-10 |
| CN105983441B (zh) | 2019-12-06 |
| KR102330206B1 (ko) | 2021-11-22 |
| SG10201602254PA (en) | 2016-10-28 |
| US20160280962A1 (en) | 2016-09-29 |
| JP2016196632A (ja) | 2016-11-24 |
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